MRFE6S9160HR3 vs MRF6S9160HR3 موازنہ
تفصیلی ساتھ ساتھ موازنہ از MRFE6S9160HR3 بذریعہ NXP Semiconductors اور MRF6S9160HR3 بذریعہ NXP Semiconductors. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
خصوصیات کا موازنہ
| پیرامیٹر | MRFE6S9160HR3 | MRF6S9160HR3 |
|---|---|---|
| برانڈ | NXP Semiconductors | NXP Semiconductors |
| زمرہ | MOSFETs | MOSFETs |
| لائف سائیکل کی حالت | فعال | فعال |
| Manufacturer | NXP Semiconductors | Freescale Semiconductor (now NXP Semiconductors) |
| ٹرانزسٹر کی قسم | N-Channel Enhancement-Mode Lateral MOSFET | — |
| Technology | HV6E lateral MOSFET (LDMOS-like) | RF Power MOSFET (lateral N-channel, enhancement mode) |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | [DATA_NEEDED: full datasheet frequency range] |
| Test Frequency | 880 MHz | — |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | — |
| پیکیج / کیس | NI-780H-2L (ceramic/metal air-cavity flange-mount) | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged |
| ماؤنٹنگ ٹائپ | Chassis / Flange mount (through-hole RF leads) | Chassis/Surface flange mount (screw-down) |
| آپریٹنگ درجہ حرارت رینج | -40C to +150C (junction) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| RoHS اسٹیٹس | Compliant | unknown |
| Lead-Free | Yes | — |
| MSL لیول | Not applicable (non-SMD air-cavity package) | — |
| Frequency Band | — | 880 MHz (single-band cellular UHF) |
| Drain-Source Voltage (VDSS) | — | [DATA_NEEDED: VDSS rating] |
| Supply Voltage (VDD) | — | 28 V (typical operation) |
| Average Output Power (Pout avg) | — | 35 W (N-CDMA, 880 MHz) |
| Peak Output Power (Pout peak) | — | [DATA_NEEDED: peak Pout rating] |
| Power Gain (Gp) | — | 20.9 dB (typical at 880 MHz) |
| Drain Efficiency (ηD) | — | [DATA_NEEDED: efficiency at rated Pout] |
| Quiescent Bias Current (IDQ) | — | 1.2 A (typical) |
| Configuration | — | Single (single-ended, common-source) |
| Operating Mode | — | Enhancement mode, Class AB |
| Test Signal | — | Single N-CDMA |
| Maximum Power Dissipation | — | 565 W (absolute, per Partstack parametric record) |
| Lead Finish | — | [DATA_NEEDED: lead finish] |