RTAX2000D-1CQ352E vs RTAX2000D-1CQ352B موازنہ
تفصیلی ساتھ ساتھ موازنہ از RTAX2000D-1CQ352E بذریعہ Microchip Technology اور RTAX2000D-1CQ352B بذریعہ Microchip Technology. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
Microchip Technology
RTAX2000D-1CQ352E - 2M-Gate Rad-Tolerant FPGA CQFP352 | Microchip
RTAX2000D-1CQ352E ✓ فعالMicrochip Technology
RTAX2000D-1CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352B ✓ فعالخصوصیات کا موازنہ
| پیرامیٹر | RTAX2000D-1CQ352E | RTAX2000D-1CQ352B |
|---|---|---|
| برانڈ | Microchip Technology | Microchip Technology |
| زمرہ | FPGA & CPLD | FPGA & CPLD |
| لائف سائیکل کی حالت | فعال | فعال |
| Equivalent System Gates | 2000000 gates | 2,000,000 |
| Logic Organization | 19712 CLBs | — |
| Technology | Digital CMOS FPGA, antifuse (nonvolatile) | Antifuse (nonvolatile), Digital CMOS |
| پیکیج | CQFP352 (352-terminal Ceramic Quad Flat Pack) | 352-pin Ceramic Column Grid Array (CQ352) |
| آپریٹنگ درجہ حرارت رینج | -55C to +125C | — |
| Family | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs | RTAX-S/SL and RTAX-DSP (RTAX2000D) |
| Total Ionizing Dose (Functional) | 300 krad | — |
| Total Ionizing Dose (Rated) | 200 krad | — |
| DSP Mathblocks | Up to 120 | Up to 120 (18-bit x 18-bit MAC) |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Up to 540 kbits SRAM with optional EDAC |
| Programmability | One-time programmable (antifuse) | — |
| سپلائی وولٹیج | [DATA_NEEDED: core/supply voltage] | — |
| User I/O Terminals | [DATA_NEEDED: user I/O count for CQ352] | — |
| Max System Frequency | [DATA_NEEDED: max system frequency] | — |
| Radiation Environment Target | Space-based applications | — |
| Commercial Prototype Equivalent | Axcelerator family device | — |
| CLBs (Logic Cells) | — | 19,712 CLBs / 29,568 logic cells (per family organization) |
| DSP Performance | — | 125 MHz 18-bit x 18-bit multiply-accumulate |
| Total Ionizing Dose | — | 300 krad (Si) functional / 200 krad (Si) with operation |
| Core Supply Voltage | — | 1.5 V nominal (1.425 V to 1.575 V) |
| Speed Grade | — | -1 |
| Temperature Range | — | Commercial (C) |
| Configuration | — | Live at power-up, no external configuration device (antifuse) |
| Routing Features | — | Segmentable clocks, chip-wide highway routing, carry logic |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| ماؤنٹنگ ٹائپ | — | Surface Mount (ceramic column grid array) |
| Application Domain | — | Space-flight, radiation-tolerant |