RTAX2000SL-1CGS624EV vs RTAX2000SL-1CGS624V موازنہ
تفصیلی ساتھ ساتھ موازنہ از RTAX2000SL-1CGS624EV بذریعہ Microchip Technology اور RTAX2000SL-1CGS624V بذریعہ Microsemi. اہم خصوصیات، برقی پیرامیٹرز، پیکیجنگ، لائف سائیکل اسٹیٹس، قیمتوں اور دستیابی کا موازنہ کریں تاکہ آپ کی ڈیزائن ضروریات کے لیے بہترین کمپوننٹ کا تعین ہو سکے۔
Microchip Technology
RTAX2000SL-1CGS624EV - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000SL-1CGS624EV ✓ فعالMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ فعالخصوصیات کا موازنہ
| پیرامیٹر | RTAX2000SL-1CGS624EV | RTAX2000SL-1CGS624V |
|---|---|---|
| برانڈ | Microchip Technology | Microsemi |
| زمرہ | FPGA & CPLD | FPGA & CPLD |
| لائف سائیکل کی حالت | فعال | فعال |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | — |
| Equivalent System Gates | 2,000,000 (family up to 4,000,000) | 2000000 |
| Logic Cells | 32,256 | — |
| CLBs | 21,504 | — |
| ASIC Gate Equivalent | 250,000 additional | — |
| Technology | CMOS anti-fuse, one-time programmable | Digital CMOS, antifuse nonvolatile |
| Speed Grade | -1 | -1 |
| پیکیج | 624-terminal ceramic CGA (CGS624) | 624-ball ceramic CGA (CGS624) |
| Terminals | 624 | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC |
| Configuration | Live at power-up (no external boot device) | One-time programmable (OTP), live at power-up, single chip |
| Radiation Tolerance | Radiation-tolerant (TID/SEE per datasheet qualification) | — |
| Applications | Space-flight systems | — |
| ماؤنٹنگ ٹائپ | Surface Mount | Surface Mount |
| Heritage | RTAX2000SL recognized as heritage-equivalent to RTAX2000S (per Microchip and ESA/ESCC REP 010 industry practice) | — |
| آپریٹنگ درجہ حرارت | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Core Voltage | [DATA_NEEDED: core supply voltage] | — |
| MSL لیول | [DATA_NEEDED: moisture sensitivity level] | — |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |