1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon
MPN: 1EDN8511BXUSA1 ✓ فعال1EDN8511BXUSA1 جائزہ
A gate driver IC is the crucial link between a low-power control stage (microcontroller, DSP, FPGA, isolated PWM controller) and a high-power switching device (MOSFET, IGBT, GaN). The driver translates the logic-level PWM signal into a high-current gate-charge/-discharge waveform capable of slewing large gate capacitances in nanoseconds, which directly determines switching loss, EMI signature, and ultimately power-conversion efficiency.
Key features of the 1EDN8511BXUSA1 include a typ. ±5 ns propagation delay accuracy, 8 V UVLO (under-voltage lockout) threshold, an industry-standard SOT-23-6 pinout that is drop-in compatible with the 1EDN75x/1EDN85x family, and a -40 °C to +150 °C operating junction temperature range. The 8 A sink capability makes the part particularly suited to GaN transistors whose gates must be pulled hard below threshold to avoid false turn-on.
Architecturally, the driver combines a TTL/CMOS-compatible input stage with a complementary push-pull output stage using matched driver transistors. The internal 8 V UVLO guarantees that the driver only enables the output stage once VCC exceeds the minimum gate-drive voltage of the load MOSFET/GaN, preventing partial-turn-on operation that would otherwise cause excessive dissipation.
Typical applications include synchronous buck converters, half-bridge and full-bridge topologies in telecom/datacenter 48 V point-of-load modules, telecom rectifier stages, motor-drive low-side switches, and high-frequency DC-DC converters used in server and industrial automation systems.
When designing with this device, ensure VCC decoupling with at minimum a 1 µF ceramic capacitor placed within 3 mm of the VCC pin to provide the high di/dt charge required during switching transients, and route the gate-loop return path directly to the driver GND pin to minimise parasitic inductance.
This page synthesises distributor pricing, verified drop-in alternatives, and practical PCB-layout notes that are not duplicated on the Infineon datasheet.
کے لیے ڈراپ اِن متبادل 1EDN8511BXUSA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں 1EDN8511BXUSA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Peak Sink Current, Peak Source Current, Driver Type, Isolation Voltage (Vrms).
1EDN8550B
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
1EDN7511B
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →1EDN8511B
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC27517DBVR
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
UCC27531DBVR
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
NCP81071AZR2G
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
1EDN8511BXUSA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Channel Count | 1 |
| Driver Configuration | Low-side |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Input Stage | Inverting and non-inverting |
| UVLO Threshold | 8 V |
| آپریٹنگ جنکشن درجہ حرارت | -40 °C to +150 °C |
| پیکیج | PG-SOT23-6-2 |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پن کی تعداد | 6 |
| Logic Input Compatibility | TTL / CMOS |
| Target Switch Type | Power MOSFET, GaN HEMT |
| RoHS اسٹیٹس | Compliant |
1EDN8511BXUSA1 پن کنفیگریشن
| پن 1 | VCC — Driver supply voltage (decouple with ≥1 µF ceramic) |
| پن 2 | IN+ — Non-inverting logic input (TTL/CMOS) |
| پن 3 | IN- — Inverting logic input (TTL/CMOS, internally bonded; tie to IN+ for non-inverting) |
| پن 4 | GND — Ground return for input and driver logic |
| پن 5 | OUT — Gate drive output to the power MOSFET/GaN gate |
| پن 6 | NC — Not connected (per datasheet) |
عام استعمالات
1EDN8511BXUSA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48 V Point-of-Load Synchronous Buck, Telecom Half-Bridge GaN Converter, Industrial Motor-Drive Low-Side Switch, Server & Datacenter DC-DC Converter, Solar Microinverter Low-Side Switching, USB-PD Fast-Charge Adapter.
48 V Point-of-Load Synchronous Buck
The 1EDN8511BXUSA1 drives the low-side MOSFET in 48 V-to-PoL synchronous buck converters used in telecom and datacom boards. Its 8 A sink current pulls the LS MOSFET gate hard below threshold during the freewheeling phase, eliminating shoot-through risk, while the ±5 ns propagation delay accuracy enables tight dead-time control that directly improves light-load efficiency. Placed between the controller's LS PWM output and the LS MOSFET gate, with VCC decoupled by a 1 µF X7R ceramic within 3 mm of the pin. Unlike discrete gate-buffer circuits, the integrated UVLO at 8 V guarantees the driver only operates when the gate-drive rail is fully established, preventing partial-turn-on losses. The 4 A source capability is sufficient for most 40-60 V-rated MOSFETs in the 25-40 A current class typical of PoL modules.
تجویز کردہ
Telecom Half-Bridge GaN Converter
In 48 V-to-load telecom converters using enhancement-mode GaN HEMTs (e.g. 100 V-rated GaN), the 1EDN8511BXUSA1 serves as the low-side gate driver with industry-standard SOT-23-6 footprint that is drop-in compatible with the 1EDN75x/1EDN85x family. Its 8 A sink is critical for GaN half-bridges because the very low Vgs(th) of GaN devices makes them susceptible to Miller-induced false turn-on; the strong sink pulls the gate well below threshold during the off-state. The -40 °C to +150 °C junction temperature range supports the harsh thermal environment of sealed telecom bricks, and the 8 V UVLO matches standard 9 V or 12 V gate-drive rails. For the high-side switch, pair with the Infineon 1EDI60N12AFXUMA1 isolated driver.
تجویز کردہ
Industrial Motor-Drive Low-Side Switch
Industrial motor-drive inverters operating from 24-48 V DC bus use the 1EDN8511BXUSA1 as the low-side gate driver for IGBT or MOSFET half-bridge legs where 8 A sink enables fast Miller plateau discharge. With TTL/CMOS-compatible inputs, the driver interfaces directly to 3.3 V or 5 V logic outputs from MCUs, DSPs, or dedicated motor-control ICs, eliminating the need for external level shifters. The wide operating temperature range up to +150 °C junction ensures reliable operation in sealed industrial enclosures where ambient can reach 85 °C or higher. In a typical 3-phase inverter, three 1EDN8511BXUSA1 parts are used for the low-side IGBTs of each phase leg, with isolated drivers (e.g. 1EDI60N12AFXUMA1) handling the high-side switches to provide the required galvanic isolation across the DC bus.
تجویز کردہ
Server & Datacenter DC-DC Converter
Hyperscale server 48 V-to-1 V (or 48 V-to-PoL) DC-DC stages use the 1EDN8511BXUSA1 in the low-side drive position to switch high-Qg MOSFETs at 100-500 kHz with minimum switching loss. The 8 A sink discharges the gate capacitance during the turn-off transition in nanoseconds, reducing the Miller plateau time and improving full-load efficiency by 0.5-1 % over drivers with weaker sink current. The 4 A source is sufficient because the MOSFET turn-on transition does not require as much instantaneous current when the gate-drive voltage is well above threshold. Placed within 5 mm of the driven MOSFET to limit gate-loop inductance, with separate gate-source resistor networks (typically 4.7 Ω source / 1 Ω sink) to dampen ringing on the fast-edge gate waveform.
تجویز کردہ
Solar Microinverter Low-Side Switching
In photovoltaic microinverters converting 25-40 V panel output to AC mains, the 1EDN8511BXUSA1 drives the low-side switch of the high-frequency push-pull or full-bridge primary stage. Its 8 A sink capability cleanly commutates the LS MOSFET at up to 100 kHz, minimising switching loss while the 8 V UVLO prevents operation below the safe gate-drive threshold. The wide -40 °C to +150 °C operating range handles outdoor thermal cycling, and the SOT-23-6 footprint keeps the driver loop area small - critical for clean switching at high di/dt. The TTL-compatible input allows direct connection to a digital isolator's output, simplifying the isolated drive chain from the MCU to the power stage.
تجویز کردہ
USB-PD Fast-Charge Adapter
USB-Power-Delivery adapters using active-clamp flyback or LLC topologies leverage the 1EDN8511BXUSA1 as the low-side primary MOSFET driver in the synchronous-rectifier or active-clamp position. The 8 A sink rapidly discharges the gate of the primary MOSFET during turn-off, reducing switching loss and improving the adapter's efficiency at 65 W, 100 W, and 140 W output power levels - the difference between meeting and missing DOE Level VI / CoC Tier 2 efficiency mandates. The SOT-23-6 micro-footprint allows placement adjacent to the primary MOSFET to minimise gate-loop inductance, while the wide temperature range supports sealed adapter enclosures where internal ambient can reach 90-100 °C. The driver's low quiescent current contributes less than 1 mW to standby power, helping meet the < 50 mW no-load target.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا 1EDN8511BXUSA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | 1EDN8550B | 1EDN7511B | 1EDN8511B | UCC27517DBVR | UCC27531DBVR | NCP81071AZR2G |
|---|---|---|---|---|---|---|---|
| Package | PG-SOT23-6-2 | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | SOT-23-6 (DBV) - same footprint | SOT-23-6 (DBV) - same footprint | SOT-23-6 - same footprint |
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Texas Instruments (cross-brand) | Texas Instruments (cross-brand) | onsemi (cross-brand) |
| Peak Source Current | 4 A | 5 A | 4 A | 4 A | 4 A | 5 A | 5 A |
| Peak Sink Current | 8 A | 8 A | 8 A | 8 A | 4 A | 5 A | 5 A |
| UVLO Threshold | 8 V | 8 V | 5 V | 8 V | 4 V | 4 V | 5 V |
| Driver Configuration | Low-side | Low-side | Low-side | Low-side | Low-side | Low-side | Low-side |
| Channel Count | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Operating Junction Temperature | -40 °C to +150 °C | -40 °C to +150 °C | -40 °C to +150 °C | -40 °C to +150 °C | -40 °C to +140 °C | -40 °C to +140 °C | -40 °C to +150 °C |
اہم امتیازی خصوصیات
- 8 A sink current - 2× higher than TI UCC27517 family (بمقابلہUCC27517DBVR)
- 8 V UVLO matched to standard 9-12 V GaN/MOSFET gate rails (بمقابلہUCC27531DBVR)
- Family-level drop-in compatibility with 1EDN75x/1EDN85x (بمقابلہNCP81071AZR2G)
ڈیزائن نوٹس
Gate-loop inductance is the dominant EMI source in high-dV/dt gate-drive circuits. Estimated: with 8 A sink into a gate-source loop of 5 nH total inductance, the overshoot at gate turn-off can reach VCC + L × di/dt ≈ 12 V + 5 nH × (8 A / 1 ns) = 52 V above ground, exceeding the MOSFET Vgs rating. Keep the OUT-to-GND trace loop under 5 mm in length and use a 0.5-1 Ω gate-source resistor to damp the LC ringing.
VCC decoupling must supply the peak gate-charge current without significant voltage droop. Estimated: a 10 nC Qg MOSFET switched at 500 kHz requires average drive current = Qg × f = 10 nC × 500 kHz = 5 mA, but the instantaneous current is 8 A peak for ~1 ns. Place a 1 µF X7R ceramic within 3 mm of the VCC pin, plus a 0.1 µF decoupling cap adjacent to the driver GND pin. Adding a ferrite bead on the VCC line can suppress high-frequency noise from the upstream supply.
Do not leave the IN- pin floating - tie it to IN+ if the inverting function is not used, or to GND if only the inverting input is used. An undriven IN- pin can pick up noise and cause spurious output transitions. Also verify that VCC is always above the 8 V UVLO threshold during startup; otherwise the driver may produce partial turn-on waveforms that stress the driven MOSFET. For GaN driving, ensure VCC is decoupled with low-ESR ceramic because GaN gate charge transitions occur in < 1 ns.
تعمیل کی معلومات
RoHS compliant per Infineon product page. Halogen-free status not confirmed in the verified data; marked unknown. AEC-Q100 not specifically stated; the part's -40 to +150 °C operating range makes it suitable for industrial environments but automotive qualification should be confirmed with Infineon.
