2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
MPN: 2N7002-7-F ✓ فعال2N7002-7-F جائزہ
An N-channel enhancement-mode MOSFET is a voltage-controlled device in which a positive gate-source voltage (above the threshold, typically around 1.0 V to 2.5 V for the 2N7002 family) creates a conducting inversion layer in the channel between drain and source. The 2N7002 sits within the broader MOSFET family (enhancement-mode -> N-channel -> small-signal MOSFET -> discrete transistor -> semiconductor), serving as a low-power, logic-level switch used as a building block in digital-interface analog and mixed-signal designs.
Key features of the 2N7002-7-F include a low on-resistance for its class (typically ~7.5 ohm at VGS = 10 V), gate-source breakdown rated at +/-20 V, low gate leakage, and fast switching characteristics suitable for level shifters, load switches, and relay drivers. The SOT-23-3 footprint makes it the de-facto industry-standard small-signal N-MOSFET, with pin-compatible second sources from multiple manufacturers.
The 2N7002-7-F uses an advanced trench MOSFET structure that delivers a low threshold voltage and tight RDS(on) distribution. Its small gate charge Qg enables fast turn-on/turn-off transitions at logic-level drive, which is critical when the device is used to translate between a 3.3 V microcontroller GPIO and a higher-voltage peripheral such as a 12 V relay coil or LED string.
Typical applications include logic-level translation, low-side load switching, battery-pack protection circuits, signal multiplexing, and discrete driver stages for relays, solenoids, LEDs, and small fans. The 60 V VDS rating also makes it suitable as a protection element on 12 V/24 V buses.
When designing with the 2N7002-7-F, drive the gate with at least 4.5 V to fully enhance the channel and achieve the lowest RDS(on); at 3.3 V drive the device may be only partially on. Always observe the +/-20 V VGS absolute maximum and include a gate-source resistor to prevent floating-gate turn-on in noisy environments.
This page synthesizes distributor pricing, drop-in alternatives in the same SOT-23 footprint, and practical design notes that go beyond what the manufacturer datasheet alone provides, so that engineers can select and second-source the 2N7002-7-F with confidence.
کے لیے ڈراپ اِن متبادل 2N7002-7-F — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں 2N7002-7-F (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Transistor Type, Continuous Drain Current (ID), RoHS Status.
2N7002L
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2N7002L
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2N7002L
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2N7002L
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2N7002L
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSS138NH6327XTSA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →2N7002-7-F زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| ٹرانزسٹر کی قسم | N-Channel Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDS max) | 60 V |
| Continuous Drain Current (ID) at Ta | 115 mA |
| Continuous Drain Current Range (per Mouser listing) | 105 mA to 210 mA |
| Power Dissipation (PD) at Ta | 370 mW |
| On-Resistance RDS(on) | 7.5 ohm to 13.5 ohm |
| Gate-Source Voltage (VGS) | +/-20 V |
| پیکیج | SOT-23-3 (TO-236) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
| Terminal Finish | Matte tin (solderable per MIL-STD-202, method 208) |
| Channel Mode | Enhancement |
| Technology | Trench MOSFET |
2N7002-7-F پن کنفیگریشن
| پن 1 | Gate (G) — MOSFET gate - logic-level drive input |
| پن 2 | Source (S) — MOSFET source - typically tied to GND for low-side switch |
| پن 3 | Drain (D) — MOSFET drain - switched node |
محفوظ آپریٹنگ ایریا (2N7002-7-F)
عام استعمالات
2N7002-7-F کے لیے موزوں ہے 6 ایپلیکیشنs: Logic-Level Voltage Translation (3.3V to 5V/12V), Low-Side Load Switching for Relays and LEDs, Battery-Pack Protection and Discharge Path, Signal Multiplexing and Analog Switching, Discrete Driver Stage for Small Fans and Buzzers, Industrial Control and 24V Bus Interface.
Logic-Level Voltage Translation (3.3V to 5V/12V)
The 2N7002-7-F is widely used as a low-side pass element in bidirectional logic-level translation between a 3.3 V microcontroller GPIO and a 5 V or 12 V peripheral rail. With VDS rated to 60 V and RDS(on) of about 7.5 ohm at 10 V VGS, the device tolerates common bus voltages while delivering milliohm-level channel resistance when fully enhanced. Engineers typically wire the 2N7002 source to the low-voltage side and drain to the high-voltage side, with a 10 k pull-up on the high side. The small SOT-23-3 footprint allows two translators to fit under a TSSOP footprint.
تجویز کردہ
Low-Side Load Switching for Relays and LEDs
The 2N7002-7-F is a textbook low-side switch for relay coils, solenoid valves, and LED strings operating below 60 V. Driving the gate to 10 V or 12 V (from the same supply rail) yields a saturated channel with RDS(on) in the 7 to 13 ohm range, which is adequate for hundreds of milliamps and the small voltage drop required by most indicator LEDs. Place a flyback diode across inductive loads to clamp the drain spike, and add a 100 k gate-source resistor so the device cannot float on during MCU reset.
تجویز کردہ
Battery-Pack Protection and Discharge Path
In single-cell Li-ion and multi-cell NiMH packs, the 2N7002-7-F serves as a low-side protection switch or signal-level discharge path element. Its 60 V VDS comfortably exceeds 1S to 4S Li-ion stack voltages plus inductive transients, while the 115 mA ID rating suits signal and low-power discharge paths (a true high-current protection FET would be a dedicated battery-protection IC). The SOT-23-3 package allows dense protection circuitry in compact BMS layouts.
تجویز کردہ
Signal Multiplexing and Analog Switching
The 2N7002-7-F can be used as a low-distortion analog switch in audio and instrumentation paths when on-resistance flatness is acceptable. With a small-signal N-MOSFET in SOT-23-3, two devices form a 2:1 SPDT mux with low leakage when off. The 60 V VDS provides ample headroom for signal swings up to +/-15 V, and the trench MOSFET structure ensures low charge injection compared with older planar 2N7002 dies.
تجویز کردہ
Discrete Driver Stage for Small Fans and Buzzers
Driving a 5 V or 12 V DC fan, piezoelectric buzzer, or small vibration motor from a logic-level GPIO is a classic 2N7002-7-F use case. The SOT-23-3 MOSFET acts as the saturated switch, with the gate pulled up to a 10 V or 12 V rail through a resistor and the GPIO providing the active-low or active-high control. A 1 k gate resistor damps the Miller-induced kick at the MCU pin during fast switching transitions.
تجویز کردہ
Industrial Control and 24V Bus Interface
On a 24 V industrial bus the 2N7002-7-F provides a robust interface element between the bus and a 3.3 V or 5 V controller. The 60 V VDS rating comfortably handles 24 V nominal plus surge margin, while the small SOT-23-3 footprint enables high-density interface boards. A 10 k drain pull-up to 24 V plus the 2N7002-7-F as a low-side pulldown forms a level-translation cell that is widely used in PLC digital-input modules.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا 2N7002-7-F — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | 2N7002 (onsemi) | 2N7002 (NXP) | 2N7002 (Infineon) | 2N7002 (ROHM) | 2N7002 (STMicroelectronics) | BSS138 (onsemi) |
|---|---|---|---|---|---|---|---|
| Brand | Diodes Incorporated | onsemi | NXP Semiconductors | Infineon | ROHM Semiconductor | STMicroelectronics | onsemi |
| Package | SOT-23-3 | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Drain-Source Voltage VDS max | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 50 V |
| Continuous Drain Current ID | 115 mA | 115 mA | 115 mA | 115 mA | 115 mA | 115 mA | 220 mA |
| On-Resistance RDS(on) at VGS=10V | 7.5 ohm | 7.5 ohm | 7.5 ohm | 7.5 ohm | 7.5 ohm | 7.5 ohm | 3.5 ohm |
| Pinout (1 / 2 / 3) | G / S / D | G / S / D - same | G / S / D - same | G / S / D - same | G / S / D - same | G / S / D - same | G / S / D - same |
| RoHS / Lead-Free | Yes (matte tin) | Yes | Yes | Yes | Yes | Yes | Yes |
اہم امتیازی خصوصیات
- Multi-sourced, fully interchangeable drop-in pinout (بمقابلہ2N7002 (onsemi, NXP, Infineon, ROHM, ST))
- 60 V VDS for 12 V / 24 V bus applications (بمقابلہBSS138)
- Diodes' mature trench-MOSFET process for tight RDS(on) distribution (بمقابلہGeneric 2N7002 from second sources)
ڈیزائن نوٹس
Drive the gate of the 2N7002-7-F with at least 4.5 V to keep RDS(on) close to its specified 7.5 ohm value; at 3.3 V the channel is only partially enhanced and the device may appear to drop too much voltage. Use the BSS138 instead for designs that must be driven directly from 3.3 V GPIO. Always include a 100 k gate-to-source resistor to prevent floating-gate turn-on during MCU reset.
Estimated: at VGS = 10 V and 100 mA load, conduction loss in the 2N7002-7-F is roughly P = I^2 x RDS(on) = 0.01 x 7.5 = 75 mW, well below the 370 mW Ta rating. In a sealed enclosure at 60 C ambient the SOT-23-3 copper-pad area becomes the limiting factor - a 100 mm^2 copper pour keeps the junction safely under 100 C at full load. For switching loads above 200 mA, derate by 6 mW per degree Celsius above 25 C ambient.
Place the 2N7002-7-F gate resistor (typically 1 k) as close as possible to the gate pin to damp Miller-induced ringing when the drain transitions sharply. Route the high-current drain trace on the top layer directly to the load with a wide trace to minimize parasitic inductance, which can otherwise push VDS above the 60 V rating during turn-off of an inductive load. Use a flyback diode or TVS across inductive loads to absorb the kick.
تعمیل کی معلومات
RoHS-compliant per Diodes product page (matte tin finish solderable per MIL-STD-202 method 208). Not AEC-Q100 qualified; for automotive load-switching use a dedicated automotive-grade MOSFET such as the BSS138-Q1.
