2N7002-7-F - 60V N-Ch Enhancement MOSFET SOT-23 | Diodes Incorporated
N.º da peça: 2N7002-7-F ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.36 | $0,36 |
| 10 | $0.27 | $2,70 |
| 100 | $0.18 | $18,00 |
| 500 | $0.13 | $65,00 |
| 1.000 | $0.1 | $100,00 |
| 3.000 | $0.08 | $240,00 |
2N7002-7-F Visão geral
An N-channel enhancement-mode MOSFET is a voltage-controlled device in which a positive gate-source voltage (above the threshold, typically around 1.0 V to 2.5 V for the 2N7002 family) creates a conducting inversion layer in the channel between drain and source. The 2N7002 sits within the broader MOSFET family (enhancement-mode -> N-channel -> small-signal MOSFET -> discrete transistor -> semiconductor), serving as a low-power, logic-level switch used as a building block in digital-interface analog and mixed-signal designs.
Key features of the 2N7002-7-F include a low on-resistance for its class (typically ~7.5 ohm at VGS = 10 V), gate-source breakdown rated at +/-20 V, low gate leakage, and fast switching characteristics suitable for level shifters, load switches, and relay drivers. The SOT-23-3 footprint makes it the de-facto industry-standard small-signal N-MOSFET, with pin-compatible second sources from multiple manufacturers.
The 2N7002-7-F uses an advanced trench MOSFET structure that delivers a low threshold voltage and tight RDS(on) distribution. Its small gate charge Qg enables fast turn-on/turn-off transitions at logic-level drive, which is critical when the device is used to translate between a 3.3 V microcontroller GPIO and a higher-voltage peripheral such as a 12 V relay coil or LED string.
Typical applications include logic-level translation, low-side load switching, battery-pack protection circuits, signal multiplexing, and discrete driver stages for relays, solenoids, LEDs, and small fans. The 60 V VDS rating also makes it suitable as a protection element on 12 V/24 V buses.
When designing with the 2N7002-7-F, drive the gate with at least 4.5 V to fully enhance the channel and achieve the lowest RDS(on); at 3.3 V drive the device may be only partially on. Always observe the +/-20 V VGS absolute maximum and include a gate-source resistor to prevent floating-gate turn-on in noisy environments.
This page synthesizes distributor pricing, drop-in alternatives in the same SOT-23 footprint, and practical design notes that go beyond what the manufacturer datasheet alone provides, so that engineers can select and second-source the 2N7002-7-F with confidence.
Alternativas drop-in para 2N7002-7-F — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com 2N7002-7-F (mesmo formato e footprint) — diferindo em Package, Technology, Transistor Type, Continuous Drain Current (ID), RoHS Status.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
2N7002L
✅ Drop-In✓ Em estoque
$0.028 / unidade
Ver ficha técnica →2N7002L
✅ Drop-In✓ Em estoque
$0.028 / unidade
Ver ficha técnica →2N7002L
✅ Drop-In✓ Em estoque
$0.028 / unidade
Ver ficha técnica →2N7002L
✅ Drop-In✓ Em estoque
$0.028 / unidade
Ver ficha técnica →2N7002L
✅ Drop-In✓ Em estoque
$0.028 / unidade
Ver ficha técnica →BSS138NH6327XTSA2
✅ Drop-In✓ Em estoque
$0.15 / unidade
Ver ficha técnica →2N7002-7-F Classificações máximas e características elétricas
| Tipo de transistor | N-Channel Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDS max) | 60 V |
| Continuous Drain Current (ID) at Ta | 115 mA |
| Continuous Drain Current Range (per Mouser listing) | 105 mA to 210 mA |
| Power Dissipation (PD) at Ta | 370 mW |
| On-Resistance RDS(on) | 7.5 ohm to 13.5 ohm |
| Gate-Source Voltage (VGS) | +/-20 V |
| Encapsulamento | SOT-23-3 (TO-236) |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant |
| Terminal Finish | Matte tin (solderable per MIL-STD-202, method 208) |
| Channel Mode | Enhancement |
| Technology | Trench MOSFET |
Configuração de pinos do 2N7002-7-F
| Pino 1 | Gate (G) — MOSFET gate - logic-level drive input |
| Pino 2 | Source (S) — MOSFET source - typically tied to GND for low-side switch |
| Pino 3 | Drain (D) — MOSFET drain - switched node |
Área de Operação Segura (2N7002-7-F)
Aplicações típicas
2N7002-7-F é adequado para 6 aplicaçãos: Logic-Level Voltage Translation (3.3V to 5V/12V), Low-Side Load Switching for Relays and LEDs, Battery-Pack Protection and Discharge Path, Signal Multiplexing and Analog Switching, Discrete Driver Stage for Small Fans and Buzzers, Industrial Control and 24V Bus Interface.
Logic-Level Voltage Translation (3.3V to 5V/12V)
The 2N7002-7-F is widely used as a low-side pass element in bidirectional logic-level translation between a 3.3 V microcontroller GPIO and a 5 V or 12 V peripheral rail. With VDS rated to 60 V and RDS(on) of about 7.5 ohm at 10 V VGS, the device tolerates common bus voltages while delivering milliohm-level channel resistance when fully enhanced. Engineers typically wire the 2N7002 source to the low-voltage side and drain to the high-voltage side, with a 10 k pull-up on the high side. The small SOT-23-3 footprint allows two translators to fit under a TSSOP footprint.
Recomendado
Low-Side Load Switching for Relays and LEDs
The 2N7002-7-F is a textbook low-side switch for relay coils, solenoid valves, and LED strings operating below 60 V. Driving the gate to 10 V or 12 V (from the same supply rail) yields a saturated channel with RDS(on) in the 7 to 13 ohm range, which is adequate for hundreds of milliamps and the small voltage drop required by most indicator LEDs. Place a flyback diode across inductive loads to clamp the drain spike, and add a 100 k gate-source resistor so the device cannot float on during MCU reset.
Recomendado
Battery-Pack Protection and Discharge Path
In single-cell Li-ion and multi-cell NiMH packs, the 2N7002-7-F serves as a low-side protection switch or signal-level discharge path element. Its 60 V VDS comfortably exceeds 1S to 4S Li-ion stack voltages plus inductive transients, while the 115 mA ID rating suits signal and low-power discharge paths (a true high-current protection FET would be a dedicated battery-protection IC). The SOT-23-3 package allows dense protection circuitry in compact BMS layouts.
Recomendado
Signal Multiplexing and Analog Switching
The 2N7002-7-F can be used as a low-distortion analog switch in audio and instrumentation paths when on-resistance flatness is acceptable. With a small-signal N-MOSFET in SOT-23-3, two devices form a 2:1 SPDT mux with low leakage when off. The 60 V VDS provides ample headroom for signal swings up to +/-15 V, and the trench MOSFET structure ensures low charge injection compared with older planar 2N7002 dies.
Recomendado
Discrete Driver Stage for Small Fans and Buzzers
Driving a 5 V or 12 V DC fan, piezoelectric buzzer, or small vibration motor from a logic-level GPIO is a classic 2N7002-7-F use case. The SOT-23-3 MOSFET acts as the saturated switch, with the gate pulled up to a 10 V or 12 V rail through a resistor and the GPIO providing the active-low or active-high control. A 1 k gate resistor damps the Miller-induced kick at the MCU pin during fast switching transitions.
Recomendado
Industrial Control and 24V Bus Interface
On a 24 V industrial bus the 2N7002-7-F provides a robust interface element between the bus and a 3.3 V or 5 V controller. The 60 V VDS rating comfortably handles 24 V nominal plus surge margin, while the small SOT-23-3 footprint enables high-density interface boards. A 10 k drain pull-up to 24 V plus the 2N7002-7-F as a low-side pulldown forms a level-translation cell that is widely used in PLC digital-input modules.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para 2N7002-7-F — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | 2N7002 (onsemi) | 2N7002 (NXP) | 2N7002 (Infineon) | 2N7002 (ROHM) | 2N7002 (STMicroelectronics) | BSS138 (onsemi) |
|---|---|---|---|---|---|---|---|
| Brand | Diodes Incorporated | onsemi | NXP Semiconductors | Infineon | ROHM Semiconductor | STMicroelectronics | onsemi |
| Package | SOT-23-3 | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same | SOT-23-3 - same |
| Drain-Source Voltage VDS max | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 50 V |
| Continuous Drain Current ID | 115 mA | 115 mA | 115 mA | 115 mA | 115 mA | 115 mA | 220 mA |
| On-Resistance RDS(on) at VGS=10V | 7.5 ohm | 7.5 ohm | 7.5 ohm | 7.5 ohm | 7.5 ohm | 7.5 ohm | 3.5 ohm |
| Pinout (1 / 2 / 3) | G / S / D | G / S / D - same | G / S / D - same | G / S / D - same | G / S / D - same | G / S / D - same | G / S / D - same |
| RoHS / Lead-Free | Yes (matte tin) | Yes | Yes | Yes | Yes | Yes | Yes |
Principais diferenciais
- Multi-sourced, fully interchangeable drop-in pinout (vs 2N7002 (onsemi, NXP, Infineon, ROHM, ST))
- 60 V VDS for 12 V / 24 V bus applications (vs BSS138)
- Diodes' mature trench-MOSFET process for tight RDS(on) distribution (vs Generic 2N7002 from second sources)
Notas de projeto
Drive the gate of the 2N7002-7-F with at least 4.5 V to keep RDS(on) close to its specified 7.5 ohm value; at 3.3 V the channel is only partially enhanced and the device may appear to drop too much voltage. Use the BSS138 instead for designs that must be driven directly from 3.3 V GPIO. Always include a 100 k gate-to-source resistor to prevent floating-gate turn-on during MCU reset.
Estimated: at VGS = 10 V and 100 mA load, conduction loss in the 2N7002-7-F is roughly P = I^2 x RDS(on) = 0.01 x 7.5 = 75 mW, well below the 370 mW Ta rating. In a sealed enclosure at 60 C ambient the SOT-23-3 copper-pad area becomes the limiting factor - a 100 mm^2 copper pour keeps the junction safely under 100 C at full load. For switching loads above 200 mA, derate by 6 mW per degree Celsius above 25 C ambient.
Place the 2N7002-7-F gate resistor (typically 1 k) as close as possible to the gate pin to damp Miller-induced ringing when the drain transitions sharply. Route the high-current drain trace on the top layer directly to the load with a wide trace to minimize parasitic inductance, which can otherwise push VDS above the 60 V rating during turn-off of an inductive load. Use a flyback diode or TVS across inductive loads to absorb the kick.
Informações de conformidade
RoHS-compliant per Diodes product page (matte tin finish solderable per MIL-STD-202 method 208). Not AEC-Q100 qualified; for automotive load-switching use a dedicated automotive-grade MOSFET such as the BSS138-Q1.
