BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon
MPN: BSC021N08NS5ATMA1 ✓ فعالBSC021N08NS5ATMA1 جائزہ
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the fundamental switching element of modern power electronics: a voltage-controlled three-terminal device in which the gate-source voltage modulates a conductive channel between drain and source. N-channel enhancement-mode power MOSFETs such as BSC021N08NS5ATMA1 form the high-side or low-side switch in DC-DC converters, motor drives, and load switches. OptiMOS 5 is Infineon's fifth-generation 80 V trench platform, offering the lowest R_DS(on) per die area in its class and benefiting from a low figure-of-merit that simultaneously reduces conduction and switching losses.
Key features include 80 V drain-source breakdown voltage, 2.1 mΩ maximum R_DS(on) at V_GS = 10 V, 226 A continuous drain current at case temperature 25 °C, ultra-low gate charge Q_G for fast switching, an avalanche-rated single-pulse body diode, 100 % R_G-tested gates for parallel operation, and Pb-free lead plating plus RoHS compliance. The SuperSO8 5x6 package exposes the drain tab as a thermal pad, achieving very low junction-to-case thermal resistance.
The OptiMOS 5 cell architecture uses a refined trench gate structure with an optimized epitaxial layer to balance on-resistance against switching charge. Compared with OptiMOS 3 predecessors, the FOM (R_DS(on) × Q_G) is reduced by roughly 50 %, enabling higher switching frequencies and smaller magnetics in telecom, server, and e-mobility DC-DC stages.
Typical applications include 48 V mild-hybrid DC-DC converters, telecom OR-ing and hot-swap controllers, server VRM and POL converters, synchronous rectification in telecom bricks, industrial motor drives, and USB-PD / eFuse battery protection paths. The combination of 80 V rating and very low R_DS(on) makes it ideal for systems where every milliohm of conduction loss compounds thermal stress.
When designing with this device, place gate-drive components within 5 mm of the gate pin to minimize parasitic loop inductance, and use a 10 V V_GS drive with Kelvin-source connection to fully exploit the low R_DS(on). Heatsink selection must account for the SuperSO8 thermal pad - a 1 oz copper pour of at least 6 cm² is the datasheet reference condition for the rated R_thJA.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل BSC021N08NS5ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSC021N08NS5ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, RoHS Status, Drain-Source Voltage (VDS), MSL Level.
BSC021N08NS5
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSZ060NE2LSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0504NSIATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC014N06NSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPT007N06NATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC059N04LS6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC021N08NS5ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Number | BSC021N08NS5ATMA1 |
| Technology | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (V_DS max) | 80 V |
| Continuous Drain Current (I_D, Tc=25°C) | 226 A |
| Continuous Drain Current (I_D, Tc=100°C) | 100 A |
| On-Resistance R_DS(on) max (V_GS=10 V) | 2.1 mΩ |
| Gate-Source Voltage V_GS max | ±20 V |
| Power Dissipation P_D (Tc=25°C) | 214 W |
| آپریٹنگ جنکشن درجہ حرارت | -55 °C to +175 °C |
| پیکیج | SuperSO8 5x6 (PG-TSON-8-3) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant (Pb-free) |
| MSL لیول | MSL 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) |
| Delivery Form | Tape & Reel (T&R) |
BSC021N08NS5ATMA1 پن کنفیگریشن
| پن 1 | G — Gate - gate drive input |
| پن 2 | S — Source - power source connection |
| پن 3 | S — Source - power source connection |
| پن 4 | S (Kelvin) — Source sense / Kelvin return for gate drive |
| پن 5 | D — Drain - power drain connection (bonded to thermal pad) |
| پن 6 | D — Drain - power drain connection (bonded to thermal pad) |
| پن 7 | D — Drain - power drain connection (bonded to thermal pad) |
| پن 8 | S — Source - power source connection |
| پن PAD | D (Thermal Pad) — Drain / thermal pad - solder to PCB copper for cooling |
محفوظ آپریٹنگ ایریا (DC, Tc=25°C, single pulse)
عام استعمالات
BSC021N08NS5ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48 V Mild-Hybrid DC-DC Converter, Telecom OR-ing and Hot-Swap Controller, Server VRM and POL Converters, Synchronous Rectification in Telecom DC-DC Brick, Industrial Motor Drive (48 V BLDC/PMSM), Battery Protection and eFuse (48 V Battery Packs).
48 V Mild-Hybrid DC-DC Converter
The BSC021N08NS5ATMA1's 80 V V_DS and 2.1 mΩ R_DS(on) make it ideal for primary-side and secondary-side switches in 48 V mild-hybrid automotive DC-DC converters (e.g. 48 V to 12 V buck/boost stages). The 80 V rating leaves margin above the 48 V nominal rail, accommodating load-dump transients defined in LV148 and ISO 21780 standards. Its 226 A current rating supports power levels above 2 kW per switch in liquid-cooled 48 V systems, where conduction loss must be minimized to avoid derating the inverter. The SuperSO8 5x6 footprint and Kelvin-source pin enable high-frequency (200-500 kHz) switching without the gate ringing that plagues SO-8 parts. Per the Infineon OptiMOS 5 datasheet, the FOM (R_DS(on) × Q_G) of this part enables 2-3% efficiency gain versus OptiMOS 3 at the same frequency. Use as primary FET between 48 V bus and the high-frequency transformer primary.
تجویز کردہ
Telecom OR-ing and Hot-Swap Controller
In -48 V telecom rectifier OR-ing and hot-swap stages, the BSC021N08NS5ATMA1 acts as the low-loss series element that disconnects a failed supply from the paralleled bus. Its 80 V V_DS comfortably exceeds the -75 V transient window of ETSI EN 300 132-2 and provides additional margin for distribution surges, while the 2.1 mΩ R_DS(on) drops only ~50 mW at 5 A per MOSFET, eliminating the need for active cooling in a 1U shelf. The avalanche-rated body diode handles the bus-rail inductive kickback when the FET turns off during a current-sharing transient. Designers typically pair two of these in a common-drain OR-ing configuration with a TI LM5060 or LTC4217 hot-swap controller. Per Infineon datasheet, the 100% R_G-tested gate enables clean paralleling without oscillation.
تجویز کردہ
Server VRM and POL Converters
In high-current server VRM and POL (point-of-load) converters, the BSC021N08NS5ATMA1 serves as the synchronous rectifier on the 12 V or 48 V input side of buck converters delivering 100-300 A to CPUs and AI accelerators. The 226 A continuous drain current (at Tc=25 °C) supports very high phase counts per converter, while the 2.1 mΩ R_DS(on) at V_GS = 10 V directly translates to sub-1% conduction-loss contribution at full load, critical for 80+ Titanium and beyond efficiency targets. OptiMOS 5's low gate charge (Q_G) enables switching frequencies of 500 kHz-1 MHz, shrinking magnetics and improving transient response. Place the part on the bottom side of a 6-layer PCB with at least 6 cm² of 1 oz copper on the drain tab for the datasheet-referenced thermal performance.
تجویز کردہ
Synchronous Rectification in Telecom DC-DC Brick
The BSC021N08NS5ATMA1 is well suited as the synchronous rectifier MOSFET on the secondary side of an isolated telecom brick (e.g. 400 V to 48 V half-bridge LLC). The 80 V V_DS rating matches the rectified 48 V output plus reflection ripple and small overshoot from the transformer, while the 2.1 mΩ R_DS(on) at full gate drive yields synchronous-rectifier losses lower than a Schottky diode, improving overall brick efficiency by 1-2 percentage points. The avalanche-rated body diode simplifies dead-time control and tolerates reverse-recovery events. Per Infineon's OptiMOS 5 datasheet, the part's low Q_rr makes it superior to planar MOSFETs in hard-switched bridge legs, reducing cross-conduction losses during the 50-100 ns dead time.
تجویز کردہ
Industrial Motor Drive (48 V BLDC/PMSM)
In industrial 48 V BLDC and PMSM motor drives, the BSC021N08NS5ATMA1 functions as the low-side (and with two in half-bridge, both sides) FET of a three-phase inverter driving motors up to 5 kW. The 80 V V_DS handles the 48 V DC bus plus regenerative spike overshoot, while the 226 A rating provides ample margin for inrush and short-circuit events. The 2.1 mΩ R_DS(on) keeps conduction losses below 0.5% at 50 A RMS, enabling fan-less or sealed-housing designs. The SuperSO8 5x6 package with exposed thermal pad is footprint-compatible with major motor-driver reference designs from TI and Infineon, simplifying PCB migration between motor power ranges. Per Infineon's datasheet, the avalanche-energy rating supports the inductive-kickback energy of a stalled motor without external TVS clamps.
تجویز کردہ
Battery Protection and eFuse (48 V Battery Packs)
In 48 V battery-pack protection (eFuse, disconnect, and pre-charge circuits), the BSC021N08NS5ATMA1 acts as the high-current disconnect switch between the cells and the load. Its 80 V V_DS handles a fully-charged 48 V pack plus inductive kickback, and its 2.1 mΩ R_DS(on) contributes less than 100 mW of loss per FET at 7 A continuous, well below the dissipation budget of a sealed battery management enclosure. The avalanche-rated body diode supports the inrush from capacitive loads and pre-charge events without external protection. Pair with an AFE such as the BQ79656 for cell monitoring; the MOSFET sits between the B- terminal and the pack output. The 100% R_G-tested gate of the OptiMOS 5 part enables reliable parallel operation for higher-current packs.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSC021N08NS5ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC021N08NS5 | BSZ060NE2LSATMA1 | BSC0504NSIATMA1 | BSC014N06NSATMA1 | IPT007N06NATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | SuperSO8 5x6 (PG-TSON-8-3) | SuperSO8 5x6 (PG-TSON-8-3) - same | SuperSO8 5x6 (PG-TSON-8-3) - same | SuperSO8 5x6 (PG-TSON-8-3) - same | SuperSO8 5x6 (PG-TSON-8-3) - same | SuperSO8 5x6 (PG-TSON-8-3) - same | SuperSO8 5x6 (PG-TSON-8-3) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DS max | 80 V | 80 V | 60 V (-25%) | 40 V (-50%) | 60 V (-25%) | 60 V (-25%) | 40 V (-50%) |
| R_DS(on) max @ V_GS=10V | 2.1 mΩ | 2.1 mΩ (identical) | lower (60 V variant) | similar OptiMOS 5 R_DS(on) range | 1.4 mΩ (better) | 0.75 mΩ (much better) | 5.9 mΩ (worse) |
| Continuous Drain Current (Tc=25°C) | 226 A | 226 A | higher current (60 V variant) | different OptiMOS 5 silicon - check datasheet | similar high-current class | high-current class | lower current (40 V variant) |
| Technology Family | OptiMOS 5 | OptiMOS 5 (same) | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Pin-to-Pin Compatible | Yes (SuperSO8 5x6) | Yes - drop-in | Yes - drop-in | Yes - drop-in | Yes - drop-in | Yes - drop-in | Yes - drop-in |
| Delivery Form | Tape & Reel (ATMA1) | Bulk pack | Tape & Reel | Tape & Reel | Tape & Reel | Tape & Reel | Tape & Reel |
اہم امتیازی خصوصیات
- Lowest R_DS(on) per die area in 80 V OptiMOS 5 family (بمقابلہBSZ060NE2LSATMA1)
- Identical silicon to BSC021N08NS5 with Tape & Reel packaging (بمقابلہBSC021N08NS5 (bulk))
- Higher V_DS rating than 60 V Infineon alternatives (بمقابلہBSC014N06NSATMA1)
ڈیزائن نوٹس
Estimated: at continuous I_D = 100 A (Tc=100 °C rating) with R_DS(on) = 2.1 mΩ at 25 °C junction, conduction loss at this point is roughly 100 A × 100 A × 0.0021 Ω × 1.5 (R_DS(on) hot-factor) ≈ 31.5 W. The SuperSO8 5x6 thermal pad (drain tab) must be soldered to at least 6 cm² of 1 oz copper per Infineon's reference PCB; without this copper area the device will quickly exceed its 175 °C junction limit. For continuous >50 A operation, use forced airflow or attach a small heatsink via thermal interface material to the drain pad.
Place the gate-drive resistor and gate-source pull-down within 5 mm of pins 1 (G) and 4 (Kelvin S) to minimize the gate-drive loop inductance. The Kelvin source pin (pin 4) must be used as the gate-drive return - connecting the gate return to the power source (pin 2/3/8) instead creates a common-source inductance that can cause V_GS ringing and turn-on dv/dt-induced shoot-through. Use a 4-layer PCB with a solid ground plane beneath the part and stitch vias around the drain-pad copper pour to suppress thermal rise and provide a low-impedance return for switching currents.
Do not parallel more than two BSC021N08NS5ATMA1 units without individual gate resistors - although the 100% R_G-tested silicon helps, parasitic gate-source loop asymmetry can still cause high-frequency oscillation when four or more devices share a single gate driver. Use 1-10 Ω individual gate resistors for each paralleled FET. Also avoid V_GS transients beyond ±20 V; gate oxide breakdown is permanent. In applications with high dV/dt on the drain (e.g. hard-switched bridge legs), add a 10 kΩ gate-source resistor to prevent spurious turn-on from the Miller coupling capacitance C_GD × dV/dt.
تعمیل کی معلومات
RoHS compliant per Infineon product page (EU Directive 2011/65/EU + 2015/863). Halogen-free per Infineon material declaration. AEC-Q100 automotive qualification status not stated in the verified web data - [DATA_NEEDED: AEC-Q100 grade] for full automotive use; for automotive designs check Infineon's automotive-grade catalog for an AEQ-qualified OptiMOS 5 variant.
