BSC190N12NS3GATMA1 - 120V 44A N-Channel OptiMOS 3 MOSFET | Infineon
MPN: BSC190N12NS3GATMA1 ✓ فعالBSC190N12NS3GATMA1 جائزہ
An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses an insulated gate to modulate conduction between drain and source terminals. MOSFETs sit within the broader power semiconductor hierarchy (transistor -> discrete semiconductor -> semiconductor) and are the dominant switching element in modern DC-DC converters, motor drives, and synchronous rectification stages. OptiMOS is Infineon's trademarked trench MOSFET platform optimized for low figure-of-merit (RDS(on) x Qg), enabling high switching frequencies and reduced conduction loss.
Key differentiating specifications include a 19 mOhm maximum RDS(on) at VGS=10V, low gate charge for fast switching transitions, an integrated body diode for inductive freewheeling, and a logic-compatible gate threshold. The SuperSO8 5x6 footprint provides a low thermal resistance path (approximately 1C/W junction-to-case on the exposed pad), enabling compact high-current designs. Avalanche-rated and 100% UIS-tested, the device suits demanding power-conversion topologies.
Typical applications include primary-side switching in telecom and server DC-DC converters, synchronous rectification in 48V point-of-load modules, solar micro-inverters, motor control H-bridges, and hot-swap / OR-ing circuits in industrial power systems. Its 120V drain-source rating provides ample margin for 48V and 72V battery-fed designs.
When designing with this part, drive the gate with a dedicated gate-driver IC capable of 10V VGS rather than a logic-level GPIO, and minimize the gate-loop loop area on the PCB to control switching loss and EMI. Always size the heatsink or copper area against worst-case conduction and switching losses at the target switching frequency.
کے لیے ڈراپ اِن متبادل BSC190N12NS3GATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSC190N12NS3GATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Continuous Drain Current (ID) at Ta=25C, Drain-Source Voltage (VDS), Operating Temperature Range, Package, Part Number.
BSC190N12NS3
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC190N12NS3GATMA2
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSZ0901NSIATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NTTFS1D7N12H
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
RJK0332DPB-01#J0
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
VBQA1102N
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSC190N12NS3GATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Number | BSC190N12NS3GATMA1 |
| Technology | OptiMOS 3 (N-Channel Trench) |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) at Ta=25C | 8.6 A |
| Continuous Drain Current (ID) at Tc | 44 A |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Power Dissipation (PD) at Tc | 69 W |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C |
| پیکیج | PG-TDSON-8-1 (SuperSO8 5x6) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Avalanche Rated | Yes (UIS-tested) |
| Body Diode | Integrated |
| RoHS اسٹیٹس | Compliant (JESD-609 Code e3) |
| MSL لیول | 1 (per JEDEC J-STD-020) |
| Configuration | Single with built-in diode |
BSC190N12NS3GATMA1 پن کنفیگریشن
| پن 1 | Source — Source (connected to pins 2,3) |
| پن 2 | Source — Source (connected to pins 1,3) |
| پن 3 | Source — Source (connected to pins 1,2) |
| پن 4 | Gate — Gate drive input |
| پن 5 | NC — Not connected (per datasheet) |
| پن 6 | Source — Source (connected to pins 7,8) |
| پن 7 | Source — Source (connected to pins 6,8) |
| پن 8 | Source — Source (connected to pins 6,7) |
| پن EP | Drain — Drain and thermal pad (exposed pad) |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
BSC190N12NS3GATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48V Telecom DC-DC Primary Switch, Synchronous Rectification in 48V PoL, Solar Micro-Inverter Power Stage, Industrial Motor Drive H-Bridge, Hot-Swap and OR-ing Controller Switch, Battery Management and Protection.
48V Telecom DC-DC Primary Switch
The BSC190N12NS3GATMA1 fits 48V telecom primary-side switching where 120V VDS rating provides 2x transient margin over 60V worst-case spikes, and its 19 mOhm RDS(on) keeps conduction loss low at full load. In a typical 48V-input isolated DC-DC converter, the part operates at 100-200kHz with a dedicated gate driver delivering 10V VGS. OptiMOS 3's low Qg reduces switching loss, enabling >96% efficiency in 600W-1kW brick converters.
تجویز کردہ
Synchronous Rectification in 48V PoL
For 48V point-of-load synchronous rectification stages stepping down to 12V or 5V rails, the BSC190N12NS3GATMA1's 19 mOhm RDS(on) and integrated body diode simplify the half-bridge layout. Its low gate charge reduces driver loss at high switching frequencies, and the SuperSO8 5x6 footprint enables high-current-density layouts. The 120V rating tolerates ringing from 48V bus inductance during dead-time transitions.
تجویز کردہ
Solar Micro-Inverter Power Stage
In solar micro-inverters and string inverters, the BSC190N12NS3GATMA1 handles 60V PV open-circuit voltages with 2x VDS headroom. The 44A continuous Tc current supports 2-3kW inverter designs, and OptiMOS 3's figure-of-merit enables >98% peak efficiency at 100kHz+ switching. The integrated body diode manages dead-time conduction in half-bridge legs, while avalanche rating absorbs energy from leakage inductance during commutation.
تجویز کردہ
Industrial Motor Drive H-Bridge
For industrial motor drive H-bridges and half-bridges driving 48V-72V brushed or brushless DC motors, the BSC190N12NS3GATMA1 provides 44A continuous current capability in a compact SuperSO8 footprint. Its low RDS(on) minimizes thermal dissipation during PWM conduction, and the 120V rating tolerates back-EMF spikes from motor inductance. Pair with a gate-driver IC to deliver 10V VGS at PWM frequencies up to 50kHz.
تجویز کردہ
Hot-Swap and OR-ing Controller Switch
In -48V telecom hot-swap and OR-ing applications, the BSC190N12NS3GATMA1 serves as the main pass element or OR-ing MOSFET. The 120V VDS rating provides margin for transients on the -48V bus, while the 19 mOhm RDS(on) keeps conduction loss low at 30A+ continuous currents. Avalanche rating handles the inrush energy during board insertion into a live backplane, and the SuperSO8 footprint fits standard TO-220-equivalent land patterns.
تجویز کردہ
Battery Management and Protection
For 48V lithium battery packs and industrial battery management systems, the BSC190N12NS3GATMA1 functions as a protection MOSFET or discharge switch. The 120V rating handles transients in multi-cell battery stacks, and the 19 mOhm RDS(on) minimizes conduction loss during high-current discharge cycles. The integrated body diode supports bidirectional current flow required for regenerative braking and bidirectional converters.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSC190N12NS3GATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC190N12NS3 | BSC190N12NS3GATMA2 | BSZ0901NS | NTTFS1D7N12H | RJK0332DPB-01#J0 | VBQA1102N |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Renesas Electronics | VBsemi |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| Drain-Source Voltage (VDS) | 120 V | 120 V | 120 V | 75 V | 120 V | 120 V | 120 V |
| Technology | OptiMOS 3 (Trench) | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | Trench (onsemi) | Trench (Renesas) | Trench (VBsemi) |
اہم امتیازی خصوصیات
- OptiMOS 3 technology provides industry-leading figure-of-merit (بمقابلہNTTFS1D7N12H (onsemi))
- Same die available in multiple packaging variants (بمقابلہBSZ0901NS (Infineon 75V))
- Avalanche-rated with integrated body diode (بمقابلہRJK0332DPB-01#J0 (Renesas))
ڈیزائن نوٹس
At 44A continuous drain current into a SuperSO8 5x6 package, thermal management is critical. The PG-TDSON-8-1 has a junction-to-case thermal resistance of approximately 1C/W on the exposed pad, but junction-to-ambient depends on PCB copper area. Estimated: at 10W dissipation with 1 square inch of top-side copper pour on a 1oz board, junction-to-ambient thermal resistance is around 50C/W, giving a 500C temperature rise above ambient. At this current level, use at least 2 square inches of copper pour or an external heatsink attached to the drain pad.
Layout the gate-drive loop (gate-driver output -> MOSFET gate -> MOSFET source -> gate-driver ground return) with minimum area to limit parasitic inductance. Use 4-8 mil microstrip topology for the gate trace and place the gate pull-down resistor (typically 10k) close to the gate pin. The exposed drain pad must have at least 8 thermal vias (0.3mm drill, 1mm pitch) to inner copper planes for effective heat extraction. Source pins 1-3 and 6-8 must all be soldered for full current capability and low RDS(on).
Do not drive the gate directly from a 3.3V logic GPIO - the VGS(th) of OptiMOS 3 typically sits at 2-3V, but full enhancement (and the datasheet RDS(on) of 19 mOhm) requires VGS=10V. Always use a dedicated gate-driver IC (such as IRS2110SPBF or 1ED3122MC12HXUMA1) capable of sourcing/sinking 2A peak gate current. Never exceed VGS=+/-20V, or the gate oxide will be permanently damaged. For avalanche-rated designs, ensure peak inductive energy during turn-off stays within the single-pulse avalanche rating (EAS) specified in the datasheet.
تعمیل کی معلومات
RoHS compliant per JESD-609 Code e3 (per Vyrian listing). Not AEC-Q100 qualified per available data. Lead-free terminal finish. Halogen-free status not explicitly stated in verified data - set to unknown.
