BSC190N12NS3GATMA1 - 120V 44A N-Channel OptiMOS 3 MOSFET | Infineon
MPN: BSC190N12NS3GATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.21 | $605.00 |
| 1,000 | $1.05 | $1,050.00 |
| 3,000 | $0.89 | $2,670.00 |
BSC190N12NS3GATMA1 Overview
An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses an insulated gate to modulate conduction between drain and source terminals. MOSFETs sit within the broader power semiconductor hierarchy (transistor -> discrete semiconductor -> semiconductor) and are the dominant switching element in modern DC-DC converters, motor drives, and synchronous rectification stages. OptiMOS is Infineon's trademarked trench MOSFET platform optimized for low figure-of-merit (RDS(on) x Qg), enabling high switching frequencies and reduced conduction loss.
Key differentiating specifications include a 19 mOhm maximum RDS(on) at VGS=10V, low gate charge for fast switching transitions, an integrated body diode for inductive freewheeling, and a logic-compatible gate threshold. The SuperSO8 5x6 footprint provides a low thermal resistance path (approximately 1C/W junction-to-case on the exposed pad), enabling compact high-current designs. Avalanche-rated and 100% UIS-tested, the device suits demanding power-conversion topologies.
Typical applications include primary-side switching in telecom and server DC-DC converters, synchronous rectification in 48V point-of-load modules, solar micro-inverters, motor control H-bridges, and hot-swap / OR-ing circuits in industrial power systems. Its 120V drain-source rating provides ample margin for 48V and 72V battery-fed designs.
When designing with this part, drive the gate with a dedicated gate-driver IC capable of 10V VGS rather than a logic-level GPIO, and minimize the gate-loop loop area on the PCB to control switching loss and EMI. Always size the heatsink or copper area against worst-case conduction and switching losses at the target switching frequency.
Drop-in alternatives for BSC190N12NS3GATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with BSC190N12NS3GATMA1 (same form factor and footprint) β differing in Continuous Drain Current (ID) at Ta=25C, Drain-Source Voltage (VDS), Operating Temperature Range, Package, Part Number.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSC190N12NS3
β Drop-Inπ Reference alternative (not in catalog)
BSC190N12NS3GATMA2
β Drop-Inπ Reference alternative (not in catalog)
BSZ0901NSIATMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―β In Stock
$0.34 / Unit
View Datasheet βNTTFS1D7N12H
β Drop-Inπ Reference alternative (not in catalog)
RJK0332DPB-01#J0
β Drop-Inπ Reference alternative (not in catalog)
VBQA1102N
β Drop-Inπ Reference alternative (not in catalog)
BSC190N12NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC190N12NS3GATMA1 |
| Technology | OptiMOS 3 (N-Channel Trench) |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) at Ta=25C | 8.6 A |
| Continuous Drain Current (ID) at Tc | 44 A |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Power Dissipation (PD) at Tc | 69 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Avalanche Rated | Yes (UIS-tested) |
| Body Diode | Integrated |
| RoHS Status | Compliant (JESD-609 Code e3) |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Configuration | Single with built-in diode |
BSC190N12NS3GATMA1 Pin Configuration
| Pin 1 | Source β Source (connected to pins 2,3) |
| Pin 2 | Source β Source (connected to pins 1,3) |
| Pin 3 | Source β Source (connected to pins 1,2) |
| Pin 4 | Gate β Gate drive input |
| Pin 5 | NC β Not connected (per datasheet) |
| Pin 6 | Source β Source (connected to pins 7,8) |
| Pin 7 | Source β Source (connected to pins 6,8) |
| Pin 8 | Source β Source (connected to pins 6,7) |
| Pin EP | Drain β Drain and thermal pad (exposed pad) |
Safe Operating Area (DC)
Typical Applications
BSC190N12NS3GATMA1 is suitable for 6 applications: 48V Telecom DC-DC Primary Switch, Synchronous Rectification in 48V PoL, Solar Micro-Inverter Power Stage, Industrial Motor Drive H-Bridge, Hot-Swap and OR-ing Controller Switch, Battery Management and Protection.
48V Telecom DC-DC Primary Switch
The BSC190N12NS3GATMA1 fits 48V telecom primary-side switching where 120V VDS rating provides 2x transient margin over 60V worst-case spikes, and its 19 mOhm RDS(on) keeps conduction loss low at full load. In a typical 48V-input isolated DC-DC converter, the part operates at 100-200kHz with a dedicated gate driver delivering 10V VGS. OptiMOS 3's low Qg reduces switching loss, enabling >96% efficiency in 600W-1kW brick converters.
Recommended
Synchronous Rectification in 48V PoL
For 48V point-of-load synchronous rectification stages stepping down to 12V or 5V rails, the BSC190N12NS3GATMA1's 19 mOhm RDS(on) and integrated body diode simplify the half-bridge layout. Its low gate charge reduces driver loss at high switching frequencies, and the SuperSO8 5x6 footprint enables high-current-density layouts. The 120V rating tolerates ringing from 48V bus inductance during dead-time transitions.
Recommended
Solar Micro-Inverter Power Stage
In solar micro-inverters and string inverters, the BSC190N12NS3GATMA1 handles 60V PV open-circuit voltages with 2x VDS headroom. The 44A continuous Tc current supports 2-3kW inverter designs, and OptiMOS 3's figure-of-merit enables >98% peak efficiency at 100kHz+ switching. The integrated body diode manages dead-time conduction in half-bridge legs, while avalanche rating absorbs energy from leakage inductance during commutation.
Recommended
Industrial Motor Drive H-Bridge
For industrial motor drive H-bridges and half-bridges driving 48V-72V brushed or brushless DC motors, the BSC190N12NS3GATMA1 provides 44A continuous current capability in a compact SuperSO8 footprint. Its low RDS(on) minimizes thermal dissipation during PWM conduction, and the 120V rating tolerates back-EMF spikes from motor inductance. Pair with a gate-driver IC to deliver 10V VGS at PWM frequencies up to 50kHz.
Recommended
Hot-Swap and OR-ing Controller Switch
In -48V telecom hot-swap and OR-ing applications, the BSC190N12NS3GATMA1 serves as the main pass element or OR-ing MOSFET. The 120V VDS rating provides margin for transients on the -48V bus, while the 19 mOhm RDS(on) keeps conduction loss low at 30A+ continuous currents. Avalanche rating handles the inrush energy during board insertion into a live backplane, and the SuperSO8 footprint fits standard TO-220-equivalent land patterns.
Recommended
Battery Management and Protection
For 48V lithium battery packs and industrial battery management systems, the BSC190N12NS3GATMA1 functions as a protection MOSFET or discharge switch. The 120V rating handles transients in multi-cell battery stacks, and the 19 mOhm RDS(on) minimizes conduction loss during high-current discharge cycles. The integrated body diode supports bidirectional current flow required for regenerative braking and bidirectional converters.
Recommended
Recommended Products Summary
Engineering reference data for BSC190N12NS3GATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC190N12NS3 | BSC190N12NS3GATMA2 | BSZ0901NS | NTTFS1D7N12H | RJK0332DPB-01#J0 | VBQA1102N |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Renesas Electronics | VBsemi |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| Drain-Source Voltage (VDS) | 120 V | 120 V | 120 V | 75 V | 120 V | 120 V | 120 V |
| Technology | OptiMOS 3 (Trench) | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | Trench (onsemi) | Trench (Renesas) | Trench (VBsemi) |
Key Differentiators
- OptiMOS 3 technology provides industry-leading figure-of-merit (vs NTTFS1D7N12H (onsemi))
- Same die available in multiple packaging variants (vs BSZ0901NS (Infineon 75V))
- Avalanche-rated with integrated body diode (vs RJK0332DPB-01#J0 (Renesas))
Design Notes
At 44A continuous drain current into a SuperSO8 5x6 package, thermal management is critical. The PG-TDSON-8-1 has a junction-to-case thermal resistance of approximately 1C/W on the exposed pad, but junction-to-ambient depends on PCB copper area. Estimated: at 10W dissipation with 1 square inch of top-side copper pour on a 1oz board, junction-to-ambient thermal resistance is around 50C/W, giving a 500C temperature rise above ambient. At this current level, use at least 2 square inches of copper pour or an external heatsink attached to the drain pad.
Layout the gate-drive loop (gate-driver output -> MOSFET gate -> MOSFET source -> gate-driver ground return) with minimum area to limit parasitic inductance. Use 4-8 mil microstrip topology for the gate trace and place the gate pull-down resistor (typically 10k) close to the gate pin. The exposed drain pad must have at least 8 thermal vias (0.3mm drill, 1mm pitch) to inner copper planes for effective heat extraction. Source pins 1-3 and 6-8 must all be soldered for full current capability and low RDS(on).
Do not drive the gate directly from a 3.3V logic GPIO - the VGS(th) of OptiMOS 3 typically sits at 2-3V, but full enhancement (and the datasheet RDS(on) of 19 mOhm) requires VGS=10V. Always use a dedicated gate-driver IC (such as IRS2110SPBF or 1ED3122MC12HXUMA1) capable of sourcing/sinking 2A peak gate current. Never exceed VGS=+/-20V, or the gate oxide will be permanently damaged. For avalanche-rated designs, ensure peak inductive energy during turn-off stays within the single-pulse avalanche rating (EAS) specified in the datasheet.
Compliance Information
RoHS compliant per JESD-609 Code e3 (per Vyrian listing). Not AEC-Q100 qualified per available data. Lead-free terminal finish. Halogen-free status not explicitly stated in verified data - set to unknown.
