BSC190N12NS3GATMA1 - 120V 44A N-Channel OptiMOS 3 MOSFET | Infineon
MPN: BSC190N12NS3GATMA1 ✓ Hoạt độngBSC190N12NS3GATMA1 Tóm tắt
An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses an insulated gate to modulate conduction between drain and source terminals. MOSFETs sit within the broader power semiconductor hierarchy (transistor -> discrete semiconductor -> semiconductor) and are the dominant switching element in modern DC-DC converters, motor drives, and synchronous rectification stages. OptiMOS is Infineon's trademarked trench MOSFET platform optimized for low figure-of-merit (RDS(on) x Qg), enabling high switching frequencies and reduced conduction loss.
Key differentiating specifications include a 19 mOhm maximum RDS(on) at VGS=10V, low gate charge for fast switching transitions, an integrated body diode for inductive freewheeling, and a logic-compatible gate threshold. The SuperSO8 5x6 footprint provides a low thermal resistance path (approximately 1C/W junction-to-case on the exposed pad), enabling compact high-current designs. Avalanche-rated and 100% UIS-tested, the device suits demanding power-conversion topologies.
Typical applications include primary-side switching in telecom and server DC-DC converters, synchronous rectification in 48V point-of-load modules, solar micro-inverters, motor control H-bridges, and hot-swap / OR-ing circuits in industrial power systems. Its 120V drain-source rating provides ample margin for 48V and 72V battery-fed designs.
When designing with this part, drive the gate with a dedicated gate-driver IC capable of 10V VGS rather than a logic-level GPIO, and minimize the gate-loop loop area on the PCB to control switching loss and EMI. Always size the heatsink or copper area against worst-case conduction and switching losses at the target switching frequency.
Bộ thay thế dễ dàng lắp đặt cho BSC190N12NS3GATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC190N12NS3GATMA1 (cùng hình factor và footprint) — khác nhau ở Continuous Drain Current (ID) at Ta=25C, Drain-Source Voltage (VDS), Operating Temperature Range, Package, Part Number.
BSC190N12NS3
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC190N12NS3GATMA2
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSZ0901NSIATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →NTTFS1D7N12H
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
RJK0332DPB-01#J0
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
VBQA1102N
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC190N12NS3GATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | BSC190N12NS3GATMA1 |
| Technology | OptiMOS 3 (N-Channel Trench) |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) at Ta=25C | 8.6 A |
| Continuous Drain Current (ID) at Tc | 44 A |
| On-Resistance RDS(on) max at VGS=10V | 19 mOhm |
| Gate-Source Voltage (VGS) max | +/- 20 V |
| Power Dissipation (PD) at Tc | 69 W |
| Khoảng nhiệt độ hoạt động | -55C to +150C |
| Hộp | PG-TDSON-8-1 (SuperSO8 5x6) |
| Kiểu lắp đặt | Surface Mount |
| Avalanche Rated | Yes (UIS-tested) |
| Body Diode | Integrated |
| Trạng thái RoHS | Compliant (JESD-609 Code e3) |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Configuration | Single with built-in diode |
Cấu hình chân BSC190N12NS3GATMA1
| Chân 1 | Source — Source (connected to pins 2,3) |
| Chân 2 | Source — Source (connected to pins 1,3) |
| Chân 3 | Source — Source (connected to pins 1,2) |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | NC — Not connected (per datasheet) |
| Chân 6 | Source — Source (connected to pins 7,8) |
| Chân 7 | Source — Source (connected to pins 6,8) |
| Chân 8 | Source — Source (connected to pins 6,7) |
| Chân EP | Drain — Drain and thermal pad (exposed pad) |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
BSC190N12NS3GATMA1 phù hợp cho 6 Áp dụngs: 48V Telecom DC-DC Primary Switch, Synchronous Rectification in 48V PoL, Solar Micro-Inverter Power Stage, Industrial Motor Drive H-Bridge, Hot-Swap and OR-ing Controller Switch, Battery Management and Protection.
48V Telecom DC-DC Primary Switch
The BSC190N12NS3GATMA1 fits 48V telecom primary-side switching where 120V VDS rating provides 2x transient margin over 60V worst-case spikes, and its 19 mOhm RDS(on) keeps conduction loss low at full load. In a typical 48V-input isolated DC-DC converter, the part operates at 100-200kHz with a dedicated gate driver delivering 10V VGS. OptiMOS 3's low Qg reduces switching loss, enabling >96% efficiency in 600W-1kW brick converters.
Được đề xuất
Synchronous Rectification in 48V PoL
For 48V point-of-load synchronous rectification stages stepping down to 12V or 5V rails, the BSC190N12NS3GATMA1's 19 mOhm RDS(on) and integrated body diode simplify the half-bridge layout. Its low gate charge reduces driver loss at high switching frequencies, and the SuperSO8 5x6 footprint enables high-current-density layouts. The 120V rating tolerates ringing from 48V bus inductance during dead-time transitions.
Được đề xuất
Solar Micro-Inverter Power Stage
In solar micro-inverters and string inverters, the BSC190N12NS3GATMA1 handles 60V PV open-circuit voltages with 2x VDS headroom. The 44A continuous Tc current supports 2-3kW inverter designs, and OptiMOS 3's figure-of-merit enables >98% peak efficiency at 100kHz+ switching. The integrated body diode manages dead-time conduction in half-bridge legs, while avalanche rating absorbs energy from leakage inductance during commutation.
Được đề xuất
Industrial Motor Drive H-Bridge
For industrial motor drive H-bridges and half-bridges driving 48V-72V brushed or brushless DC motors, the BSC190N12NS3GATMA1 provides 44A continuous current capability in a compact SuperSO8 footprint. Its low RDS(on) minimizes thermal dissipation during PWM conduction, and the 120V rating tolerates back-EMF spikes from motor inductance. Pair with a gate-driver IC to deliver 10V VGS at PWM frequencies up to 50kHz.
Được đề xuất
Hot-Swap and OR-ing Controller Switch
In -48V telecom hot-swap and OR-ing applications, the BSC190N12NS3GATMA1 serves as the main pass element or OR-ing MOSFET. The 120V VDS rating provides margin for transients on the -48V bus, while the 19 mOhm RDS(on) keeps conduction loss low at 30A+ continuous currents. Avalanche rating handles the inrush energy during board insertion into a live backplane, and the SuperSO8 footprint fits standard TO-220-equivalent land patterns.
Được đề xuất
Battery Management and Protection
For 48V lithium battery packs and industrial battery management systems, the BSC190N12NS3GATMA1 functions as a protection MOSFET or discharge switch. The 120V rating handles transients in multi-cell battery stacks, and the 19 mOhm RDS(on) minimizes conduction loss during high-current discharge cycles. The integrated body diode supports bidirectional current flow required for regenerative braking and bidirectional converters.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC190N12NS3GATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC190N12NS3 | BSC190N12NS3GATMA2 | BSZ0901NS | NTTFS1D7N12H | RJK0332DPB-01#J0 | VBQA1102N |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | Renesas Electronics | VBsemi |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| Drain-Source Voltage (VDS) | 120 V | 120 V | 120 V | 75 V | 120 V | 120 V | 120 V |
| Technology | OptiMOS 3 (Trench) | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | Trench (onsemi) | Trench (Renesas) | Trench (VBsemi) |
Bảo phân biệt quan trọng
- OptiMOS 3 technology provides industry-leading figure-of-merit (vsNTTFS1D7N12H (onsemi))
- Same die available in multiple packaging variants (vsBSZ0901NS (Infineon 75V))
- Avalanche-rated with integrated body diode (vsRJK0332DPB-01#J0 (Renesas))
Ghi chú thiết kế
At 44A continuous drain current into a SuperSO8 5x6 package, thermal management is critical. The PG-TDSON-8-1 has a junction-to-case thermal resistance of approximately 1C/W on the exposed pad, but junction-to-ambient depends on PCB copper area. Estimated: at 10W dissipation with 1 square inch of top-side copper pour on a 1oz board, junction-to-ambient thermal resistance is around 50C/W, giving a 500C temperature rise above ambient. At this current level, use at least 2 square inches of copper pour or an external heatsink attached to the drain pad.
Layout the gate-drive loop (gate-driver output -> MOSFET gate -> MOSFET source -> gate-driver ground return) with minimum area to limit parasitic inductance. Use 4-8 mil microstrip topology for the gate trace and place the gate pull-down resistor (typically 10k) close to the gate pin. The exposed drain pad must have at least 8 thermal vias (0.3mm drill, 1mm pitch) to inner copper planes for effective heat extraction. Source pins 1-3 and 6-8 must all be soldered for full current capability and low RDS(on).
Do not drive the gate directly from a 3.3V logic GPIO - the VGS(th) of OptiMOS 3 typically sits at 2-3V, but full enhancement (and the datasheet RDS(on) of 19 mOhm) requires VGS=10V. Always use a dedicated gate-driver IC (such as IRS2110SPBF or 1ED3122MC12HXUMA1) capable of sourcing/sinking 2A peak gate current. Never exceed VGS=+/-20V, or the gate oxide will be permanently damaged. For avalanche-rated designs, ensure peak inductive energy during turn-off stays within the single-pulse avalanche rating (EAS) specified in the datasheet.
Thông tin tuân thủ
RoHS compliant per JESD-609 Code e3 (per Vyrian listing). Not AEC-Q100 qualified per available data. Lead-free terminal finish. Halogen-free status not explicitly stated in verified data - set to unknown.
