BSP296NH6327XTSA1 - 100V N-Ch MOSFET, 1.2A, SOT-223 | Infineon
MPN: BSP296NH6327XTSA1 ✓ فعالBSP296NH6327XTSA1 جائزہ
An N-Channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate-source voltage exceeds the threshold. Small-signal/small-power MOSFETs sit in the discrete-semiconductor hierarchy below power MOSFETs and are typically used for loads up to a few amps, where their low gate charge and fast switching edges enable efficient DC-DC conversion, level shifting, and high-side/low-side switching in compact surface-mount designs.
Key electrical features include a 100 V drain-source breakdown rating, 1.2 A continuous drain current at 25 °C ambient, and a maximum on-resistance of 600 mΩ. The device dissipates up to 1.8 W at Ta=25 °C with a standard 1 oz copper pad, and its SOT-223 footprint provides a usable drain tab for thermal relief. The gate is standard threshold-level driven, allowing direct interface with 5 V microcontrollers and standard logic-level gate drivers without pre-driver circuitry.
The BSP296N die uses an optimized trench cell geometry that minimizes RDS(on) * gate-charge figure-of-merit, balancing conduction loss and switching loss for sub-2 A loads. Its AEC-Q101 automotive qualification covers temperature range, humidity bias, and power-cycling stress, making it suitable for under-hood and chassis applications as well as industrial 24 V bus switching where 100 V drain headroom protects against inductive transients.
Typical applications include relay and solenoid replacement in automotive body modules, DC-DC converter high-side switches, motor-driver bridges for small fans and pumps, load switches in industrial 24 V PLC systems, and LED driver stages. The 100 V rating also supports offline-derived auxiliary rails up to 60 V continuous and provides ample margin for flyback converter primary switching.
When designing with this device, ensure the gate is driven fully enhanced (10 V recommended for lowest RDS(on)) and use a pull-down resistor to prevent unwanted turn-on during MCU reset. A gate-series resistor of 10-100 Ω controls ringing and limits inrush dV/dt. For thermal reliability at 1 A continuous load, allocate at least 100 mm² of 1 oz copper on the drain tab.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not found in the Infineon datasheet alone, accelerating part selection and PCB layout for new designs.
کے لیے ڈراپ اِن متبادل BSP296NH6327XTSA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSP296NH6327XTSA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف FET Type, Package, Part Number, Technology.
BSP296N
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSP296NH6433
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSS214NWH6327XTSA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →NTDV5804N
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
BSP296NH6327XTSA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Number | BSP296NH6327XTSA1 |
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 1.2 A |
| Power Dissipation (PD) at Ta=25C | 1.8 W |
| On-Resistance RDS(on) max | 600 mOhm |
| پیکیج | PG-SOT223-4 (4-pin, 3 leads + tab) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C (junction) |
| Qualification | AEC-Q101 (Automotive) |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
| MSL لیول | 1 (per JEDEC J-STD-020) |
| Standard Packaging | Tape & Reel, 1000 pcs/reel |
| Technology | Trench MOSFET |
BSP296NH6327XTSA1 پن کنفیگریشن
| پن 1 | Gate — Gate control input; drive to 10V for lowest RDS(on); pull to source via 10 kOhm resistor when unused |
| پن 2 | Drain — Drain connection; tied internally to tab (Pin 4); carries load current |
| پن 3 | Source — Source connection; typically tied to circuit ground for low-side switching |
| پن 4 | Drain Tab — Thermal pad connected to Drain; must be soldered to copper pour for heat dissipation |
محفوظ آپریٹنگ ایریا - DC Continuous
عام استعمالات
BSP296NH6327XTSA1 کے لیے موزوں ہے 7 ایپلیکیشنs: Automotive Relay & Solenoid Replacement, Industrial 24V Load Switch, DC-DC Converter High-Side Switch, Small Motor Driver (Fans & Pumps), LED Driver Stage, Battery Protection & Power Path Switching, Audio Amplifier Output Stage (Class-D).
Automotive Relay & Solenoid Replacement
The BSP296NH6327XTSA1's 1.2 A continuous drain rating and 100 V VDS directly replace electromechanical relays in body-control modules, where solid-state switching eliminates coil current draw, contact bounce, and audible click. Placed as a low-side switch on the load's low side with the source tied to chassis ground, it switches solenoids, valves, and small motors at 10-100 kHz PWM. AEC-Q101 qualification supports under-hood and chassis deployment. Add a flyback diode or TVS clamp across inductive loads to clamp VDS within the 100 V rating during turn-off transients.
تجویز کردہ
Industrial 24V Load Switch
In industrial PLC and sensor systems, the BSP296NH6327XTSA1 serves as a high-side or low-side switch on 24 V DC buses, providing 1.2 A continuous current capability for actuators, solenoid valves, and relay coils. Its 100 V VDS rating gives 4x transient headroom over the 24 V nominal rail, surviving load-dump events and inductive kickback. Gate drive directly from a 5 V microcontroller GPIO via a 100 Ω gate resistor keeps the BOM minimal. Mount the drain tab to at least 100 mm² of 1 oz copper for thermal reliability at sustained 1 A loads.
تجویز کردہ
DC-DC Converter High-Side Switch
The BSP296NH6327XTSA1 functions as the synchronous-rectifier or main switch in sub-2 A buck and boost converters operating from 24-60 V input rails. Its 100 V VDS rating supports wide-Vin telecom and industrial bus voltages, while the 600 mΩ RDS(on) keeps conduction loss low at 1 A load. Low gate charge enables switching frequencies up to 500 kHz for compact inductor selection. Pair with a dedicated gate driver like the IRS2110SPBF for fastest turn-on/turn-off transitions and lowest switching loss.
تجویز کردہ
Small Motor Driver (Fans & Pumps)
H-bridge and half-bridge configurations using two BSP296NH6327XTSA1 devices drive small DC fans, water pumps, and blower motors in HVAC and appliance applications. Each MOSFET's 1.2 A rating handles motors up to ~10 W mechanical output at 12-24 V supply. The 100 V rating provides robustness against back-EMF spikes from motor inductance during PWM commutation. Use complementary P-channel devices from Infineon's BSP-series for the high-side leg to simplify gate drive from 5 V logic.
تجویز کردہ
LED Driver Stage
As a constant-current linear regulator switch or PWM dimmer for LED strings, the BSP296NH6327XTSA1 handles strings up to 1.2 A from 24-48 V supply rails. The 100 V VDS rating supports long LED chains without cascaded lower-voltage MOSFETs. Used in architectural, automotive interior, and signage lighting, it enables PWM dimming at >1 kHz without audible noise. The SOT-223 footprint is small enough for linear-LED strips but robust enough thermally when the drain tab is properly soldered to copper pour.
تجویز کردہ
Battery Protection & Power Path Switching
The BSP296NH6327XTSA1 serves as the power-path switch or discharge MOSFET in low-power battery management systems for 12-48 V battery packs, including e-bikes, power tools, and UPS modules. Its 100 V VDS rating covers multi-cell battery stacks up to 10S Li-ion, and its low RDS(on) minimizes conduction loss during discharge. The SOT-223 footprint allows compact protection PCBs. Pair with a battery monitor IC for overcurrent and overvoltage protection with sub-millisecond fault response.
تجویز کردہ
Audio Amplifier Output Stage (Class-D)
In sub-2 W Class-D audio amplifiers and headphone drivers, the BSP296NH6327XTSA1 functions as the half-bridge output switch on 12-24 V supplies. Its low gate charge and fast switching edges minimize switching loss in 250-500 kHz PWM loops, while its 100 V VDS rating provides margin against speaker back-EMF. The SOT-223 thermal pad handles continuous 1 W dissipation when properly soldered to copper pour. Complementary N-channel devices can be paired for full-bridge Class-D output stages.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSP296NH6327XTSA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSP296N | BSP296NH6433 | BSS214NWH6327XTSA1 | NTDV5804N |
|---|---|---|---|---|---|
| Package | PG-SOT223-4 (Infineon) | PG-SOT223-4 - same | PG-SOT223-4 - same | PG-SOT223-4 - same | SOT-223 (onsemi) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
اہم امتیازی خصوصیات
- AEC-Q101 automotive qualification on the base die (بمقابلہGeneric industrial-only N-channel SOT-223 MOSFETs)
- Higher VDS headroom (100 V) for industrial 24 V bus applications (بمقابلہNTDV5804N (also 100 V))
- Same-brand Tape & Reel variants (H6327 vs H6433) for production flexibility (بمقابلہSingle-reel-only competitors)
ڈیزائن نوٹس
Estimated: at continuous ID=1.2 A with RDS(on)=600 mOhm, conduction loss is ~0.86 W. With a SOT-223 θJA of approximately 50 C/W on minimum copper pad (per JEDEC EIA/JESD51), junction temperature rise above ambient would be ~43 C. For 1 A continuous load at 25 C ambient, allocate at least 100 mm² of 1 oz copper pour on the drain tab to keep Tj below 100 C. Forced airflow is required for sustained operation at 1.2 A in enclosed housings.
Solder the drain tab (Pin 4) to a continuous copper pour that extends at least 5 mm beyond the package body on all sides. Use thermal vias (0.3 mm drill, 1 mm pitch) to connect the top pour to internal ground or floating copper planes for improved heat spreading. Per IPC-2222, the drain tab is electrically connected to Pin 2 (Drain), so do NOT connect the pour to circuit ground if used as a low-side switch (would short drain to source).
Always include a 10 kΩ gate-to-source pull-down resistor to prevent floating-gate turn-on during MCU reset or power-up transients. Without it, the gate can charge through the gate-drain capacitance (Miller effect) when the drain voltage rises rapidly, causing partial turn-on and possible shoot-through in half-bridge configurations. Also add a TVS diode across inductive loads to clamp VDS within the 100 V maximum rating during turn-off transients.
Keep the gate-drive loop (gate-series resistor → MOSFET gate → source) as small as possible to minimize parasitic inductance and ringing. For switching applications above 100 kHz, use a 10-100 Ω gate resistor to dampen LC ringing between gate capacitance and trace inductance. Route the high-current drain and source paths with wide traces (≥0.5 mm per amp) to minimize conduction loss and thermal stress.
تعمیل کی معلومات
AEC-Q101 (automotive discrete) qualified per Infineon product family page and datasheets.com 13-AUG-2024 parametric update. RoHS and REACH compliant. Halogen-free status not explicitly confirmed in the provided data; marked unknown.
