BSP296NH6327XTSA1 - 100V N-Ch MOSFET, 1.2A, SOT-223 | Infineon
Teilenummer: BSP296NH6327XTSA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.72 | $0,72 |
| 10 | $0.62 | $6,20 |
| 100 | $0.48 | $48,00 |
| 500 | $0.39 | $195,00 |
| 1.000 | $0.33 | $330,00 |
BSP296NH6327XTSA1 Übersicht
An N-Channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate-source voltage exceeds the threshold. Small-signal/small-power MOSFETs sit in the discrete-semiconductor hierarchy below power MOSFETs and are typically used for loads up to a few amps, where their low gate charge and fast switching edges enable efficient DC-DC conversion, level shifting, and high-side/low-side switching in compact surface-mount designs.
Key electrical features include a 100 V drain-source breakdown rating, 1.2 A continuous drain current at 25 °C ambient, and a maximum on-resistance of 600 mΩ. The device dissipates up to 1.8 W at Ta=25 °C with a standard 1 oz copper pad, and its SOT-223 footprint provides a usable drain tab for thermal relief. The gate is standard threshold-level driven, allowing direct interface with 5 V microcontrollers and standard logic-level gate drivers without pre-driver circuitry.
The BSP296N die uses an optimized trench cell geometry that minimizes RDS(on) * gate-charge figure-of-merit, balancing conduction loss and switching loss for sub-2 A loads. Its AEC-Q101 automotive qualification covers temperature range, humidity bias, and power-cycling stress, making it suitable for under-hood and chassis applications as well as industrial 24 V bus switching where 100 V drain headroom protects against inductive transients.
Typical applications include relay and solenoid replacement in automotive body modules, DC-DC converter high-side switches, motor-driver bridges for small fans and pumps, load switches in industrial 24 V PLC systems, and LED driver stages. The 100 V rating also supports offline-derived auxiliary rails up to 60 V continuous and provides ample margin for flyback converter primary switching.
When designing with this device, ensure the gate is driven fully enhanced (10 V recommended for lowest RDS(on)) and use a pull-down resistor to prevent unwanted turn-on during MCU reset. A gate-series resistor of 10-100 Ω controls ringing and limits inrush dV/dt. For thermal reliability at 1 A continuous load, allocate at least 100 mm² of 1 oz copper on the drain tab.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not found in the Infineon datasheet alone, accelerating part selection and PCB layout for new designs.
Drop-in-Alternativen für BSP296NH6327XTSA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit BSP296NH6327XTSA1 (gleiche Bauform und Footprint) – abweichend in FET Type, Package, Part Number, Technology.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BSP296N
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BSP296NH6433
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BSS214NWH6327XTSA1
✅ Drop-In✓ Auf Lager
$0.15 / Stück
Datenblatt ansehen →NTDV5804N
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BSP296NH6327XTSA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Part Number | BSP296NH6327XTSA1 |
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 1.2 A |
| Power Dissipation (PD) at Ta=25C | 1.8 W |
| On-Resistance RDS(on) max | 600 mOhm |
| Gehäuse | PG-SOT223-4 (4-pin, 3 leads + tab) |
| Montageart | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) |
| Qualification | AEC-Q101 (Automotive) |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
| MSL-Level | 1 (per JEDEC J-STD-020) |
| Standard Packaging | Tape & Reel, 1000 pcs/reel |
| Technology | Trench MOSFET |
BSP296NH6327XTSA1 Pin-Konfiguration
| Pin 1 | Gate — Gate control input; drive to 10V for lowest RDS(on); pull to source via 10 kOhm resistor when unused |
| Pin 2 | Drain — Drain connection; tied internally to tab (Pin 4); carries load current |
| Pin 3 | Source — Source connection; typically tied to circuit ground for low-side switching |
| Pin 4 | Drain Tab — Thermal pad connected to Drain; must be soldered to copper pour for heat dissipation |
Sicherer Arbeitsbereich - DC Continuous
Typische Anwendungen
BSP296NH6327XTSA1 ist geeignet für 7 Anwendungs: Automotive Relay & Solenoid Replacement, Industrial 24V Load Switch, DC-DC Converter High-Side Switch, Small Motor Driver (Fans & Pumps), LED Driver Stage, Battery Protection & Power Path Switching, Audio Amplifier Output Stage (Class-D).
Automotive Relay & Solenoid Replacement
The BSP296NH6327XTSA1's 1.2 A continuous drain rating and 100 V VDS directly replace electromechanical relays in body-control modules, where solid-state switching eliminates coil current draw, contact bounce, and audible click. Placed as a low-side switch on the load's low side with the source tied to chassis ground, it switches solenoids, valves, and small motors at 10-100 kHz PWM. AEC-Q101 qualification supports under-hood and chassis deployment. Add a flyback diode or TVS clamp across inductive loads to clamp VDS within the 100 V rating during turn-off transients.
Empfohlen
Industrial 24V Load Switch
In industrial PLC and sensor systems, the BSP296NH6327XTSA1 serves as a high-side or low-side switch on 24 V DC buses, providing 1.2 A continuous current capability for actuators, solenoid valves, and relay coils. Its 100 V VDS rating gives 4x transient headroom over the 24 V nominal rail, surviving load-dump events and inductive kickback. Gate drive directly from a 5 V microcontroller GPIO via a 100 Ω gate resistor keeps the BOM minimal. Mount the drain tab to at least 100 mm² of 1 oz copper for thermal reliability at sustained 1 A loads.
Empfohlen
DC-DC Converter High-Side Switch
The BSP296NH6327XTSA1 functions as the synchronous-rectifier or main switch in sub-2 A buck and boost converters operating from 24-60 V input rails. Its 100 V VDS rating supports wide-Vin telecom and industrial bus voltages, while the 600 mΩ RDS(on) keeps conduction loss low at 1 A load. Low gate charge enables switching frequencies up to 500 kHz for compact inductor selection. Pair with a dedicated gate driver like the IRS2110SPBF for fastest turn-on/turn-off transitions and lowest switching loss.
Empfohlen
Small Motor Driver (Fans & Pumps)
H-bridge and half-bridge configurations using two BSP296NH6327XTSA1 devices drive small DC fans, water pumps, and blower motors in HVAC and appliance applications. Each MOSFET's 1.2 A rating handles motors up to ~10 W mechanical output at 12-24 V supply. The 100 V rating provides robustness against back-EMF spikes from motor inductance during PWM commutation. Use complementary P-channel devices from Infineon's BSP-series for the high-side leg to simplify gate drive from 5 V logic.
Empfohlen
LED Driver Stage
As a constant-current linear regulator switch or PWM dimmer for LED strings, the BSP296NH6327XTSA1 handles strings up to 1.2 A from 24-48 V supply rails. The 100 V VDS rating supports long LED chains without cascaded lower-voltage MOSFETs. Used in architectural, automotive interior, and signage lighting, it enables PWM dimming at >1 kHz without audible noise. The SOT-223 footprint is small enough for linear-LED strips but robust enough thermally when the drain tab is properly soldered to copper pour.
Empfohlen
Battery Protection & Power Path Switching
The BSP296NH6327XTSA1 serves as the power-path switch or discharge MOSFET in low-power battery management systems for 12-48 V battery packs, including e-bikes, power tools, and UPS modules. Its 100 V VDS rating covers multi-cell battery stacks up to 10S Li-ion, and its low RDS(on) minimizes conduction loss during discharge. The SOT-223 footprint allows compact protection PCBs. Pair with a battery monitor IC for overcurrent and overvoltage protection with sub-millisecond fault response.
Empfohlen
Audio Amplifier Output Stage (Class-D)
In sub-2 W Class-D audio amplifiers and headphone drivers, the BSP296NH6327XTSA1 functions as the half-bridge output switch on 12-24 V supplies. Its low gate charge and fast switching edges minimize switching loss in 250-500 kHz PWM loops, while its 100 V VDS rating provides margin against speaker back-EMF. The SOT-223 thermal pad handles continuous 1 W dissipation when properly soldered to copper pour. Complementary N-channel devices can be paired for full-bridge Class-D output stages.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BSP296NH6327XTSA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BSP296N | BSP296NH6433 | BSS214NWH6327XTSA1 | NTDV5804N |
|---|---|---|---|---|---|
| Package | PG-SOT223-4 (Infineon) | PG-SOT223-4 - same | PG-SOT223-4 - same | PG-SOT223-4 - same | SOT-223 (onsemi) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Wichtigste Unterscheidungsmerkmale
- AEC-Q101 automotive qualification on the base die (vs. Generic industrial-only N-channel SOT-223 MOSFETs)
- Higher VDS headroom (100 V) for industrial 24 V bus applications (vs. NTDV5804N (also 100 V))
- Same-brand Tape & Reel variants (H6327 vs H6433) for production flexibility (vs. Single-reel-only competitors)
Designhinweise
Estimated: at continuous ID=1.2 A with RDS(on)=600 mOhm, conduction loss is ~0.86 W. With a SOT-223 θJA of approximately 50 C/W on minimum copper pad (per JEDEC EIA/JESD51), junction temperature rise above ambient would be ~43 C. For 1 A continuous load at 25 C ambient, allocate at least 100 mm² of 1 oz copper pour on the drain tab to keep Tj below 100 C. Forced airflow is required for sustained operation at 1.2 A in enclosed housings.
Solder the drain tab (Pin 4) to a continuous copper pour that extends at least 5 mm beyond the package body on all sides. Use thermal vias (0.3 mm drill, 1 mm pitch) to connect the top pour to internal ground or floating copper planes for improved heat spreading. Per IPC-2222, the drain tab is electrically connected to Pin 2 (Drain), so do NOT connect the pour to circuit ground if used as a low-side switch (would short drain to source).
Always include a 10 kΩ gate-to-source pull-down resistor to prevent floating-gate turn-on during MCU reset or power-up transients. Without it, the gate can charge through the gate-drain capacitance (Miller effect) when the drain voltage rises rapidly, causing partial turn-on and possible shoot-through in half-bridge configurations. Also add a TVS diode across inductive loads to clamp VDS within the 100 V maximum rating during turn-off transients.
Keep the gate-drive loop (gate-series resistor → MOSFET gate → source) as small as possible to minimize parasitic inductance and ringing. For switching applications above 100 kHz, use a 10-100 Ω gate resistor to dampen LC ringing between gate capacitance and trace inductance. Route the high-current drain and source paths with wide traces (≥0.5 mm per amp) to minimize conduction loss and thermal stress.
Compliance-Informationen
AEC-Q101 (automotive discrete) qualified per Infineon product family page and datasheets.com 13-AUG-2024 parametric update. RoHS and REACH compliant. Halogen-free status not explicitly confirmed in the provided data; marked unknown.
