C3M0080120D - 1200V 80mOhm SiC MOSFET, TO-247-3 | Wolfspeed
MPN: C3M0080120D ✓ فعالC3M0080120D جائزہ
A Silicon Carbide MOSFET (SiC MOSFET) is a wide-bandgap (WBG) power transistor that switches high voltages and currents with far less loss than a silicon MOSFET or IGBT. Within the power-semiconductor taxonomy, SiC MOSFETs sit between silicon MOSFETs (limited to ~600-900 V practical breakdown) and emerging GaN HEMTs (typically <650 V). SiC is the dominant WBG technology for 1200 V-class traction, solar, and industrial drives, where switching frequencies of 50-200 kHz and junction temperatures of 175 C are routine.
Key features of the C3M0080120D include an 80 mOhm typical Rds(on) at Vgs=15 V, a low gate charge (Qg typical values for the C3M family are in the tens of nC), an intrinsic body diode with negligible reverse recovery (Qrr), and a maximum operating junction temperature of 175 C. The TO-247-3 package provides a low thermal-resistance path and a standard through-hole footprint that drops into any 1200 V-class SiC design.
Typical applications include EV onboard chargers and DC-DC converters, solar string inverters, industrial motor drives, telecom rectifiers, and solid-state circuit breakers. The C3M platform is designed for hard-switched and soft-switched topologies where its low switching loss and high-temperature tolerance reduce heatsink, magnetics, and cooling cost.
When designing with the C3M0080120D, drive the gate at +15 V/-3 V to -5 V for best Rds(on) and immunity to parasitic turn-on; use a Kelvin-source TO-247 variant (C3M0080120J) if gate-loop inductance is a concern. Always derate to keep Tj below 150 C in hard-switched designs for long-term reliability.
کے لیے ڈراپ اِن متبادل C3M0080120D — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں C3M0080120D (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Manufacturer, Package, Technology.
C2M0080120D
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
C3M0080120J
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
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✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
NVHL080N120SC1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
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✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IMW120R080M2H
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
C3M0080120D زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Wolfspeed |
| Part Number | C3M0080120D |
| Technology | Silicon Carbide (SiC) Power MOSFET, 3rd generation (C3M) |
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vdss) | 1200 V |
| On-Resistance Rds(on) typ | 80 mOhm |
| Continuous Drain Current (Tc) | 36 A |
| Power Dissipation (Tc) | 192 W |
| Gate-Source Voltage (Vgs max) | -10 V to +25 V (recommended +15/-3 V) |
| آپریٹنگ جنکشن درجہ حرارت | -55 C to +175 C |
| پیکیج | TO-247-3 (through-hole, 3 leads + tab) |
| ماؤنٹنگ ٹائپ | Through Hole |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
| Body Diode | Intrinsic, zero reverse recovery (Qrr) |
C3M0080120D پن کنفیگریشن
| پن 1 | Gate — Gate drive input, +15 V on / -3 to -5 V off recommended |
| پن 2 | Drain — Power drain, internally tied to the metal mounting tab |
| پن 3 | Source — Power source, return for gate drive loop |
محفوظ آپریٹنگ ایریا (DC, Tc = 25 C)
عام استعمالات
C3M0080120D کے لیے موزوں ہے 6 ایپلیکیشنs: EV Onboard Charger and DC-DC Converter, Solar String Inverter PFC and Boost, Industrial Motor Drive Inverter, Telecom and Server Rectifier, Solid-State Circuit Breaker, High-Frequency LLC and Phase-Shift Resonant Converter.
EV Onboard Charger and DC-DC Converter
The C3M0080120D's 1200 V rating, 80 mOhm Rds(on) and zero reverse-recovery body diode make it the dominant choice for 11 kW-22 kW EV onboard chargers and high-voltage DC-DC stages. In a totem-pole PFC at 100 kHz, the C3M0080120D delivers >98% efficiency and keeps Tj below 150 C with a modest extruded-aluminum heatsink. Compared with silicon superjunction MOSFETs it eliminates diode reverse-recovery loss, and compared with 1200 V IGBTs it roughly halves switching loss.
تجویز کردہ
Solar String Inverter PFC and Boost
In 1500 V DC solar string inverters, the C3M0080120D is used in the boost PFC and DC-AC bridge stages at switching frequencies up to 100 kHz. The 1200 V Vdss comfortably handles 1000-1100 V DC link stress with 80% derating, while the 80 mOhm Rds(on) keeps conduction loss in the 1-2% range at full power. Its 175 C Tj rating allows fan-less outdoor enclosures in desert climates.
تجویز کردہ
Industrial Motor Drive Inverter
The C3M0080120D powers 5 kW-15 kW servo and industrial-drive inverters switching at 20-50 kHz. At these frequencies silicon IGBTs lose ~2-3% efficiency, while the C3M0080120D keeps total loss under 1.5% with the same heatsink. The TO-247-3 footprint matches legacy IGBT modules, simplifying retrofit upgrades without mechanical redesign.
تجویز کردہ
Telecom and Server Rectifier
380 V HVDC and 48 V bus telecom rectifiers built around the C3M0080120D reach 96-98% efficiency at 100 kHz switching, slashing cooling OpEx in dense data-center shelves. The 1200 V rating supports universal 200-480 Vac PFC front-ends, and the SiC body diode eliminates reverse-recovery-induced EMI common in silicon bridge rectifiers.
تجویز کردہ
Solid-State Circuit Breaker
Bidirectional solid-state circuit breakers (SSCBs) for 800 V EV and 1000 V DC solar buses use the C3M0080120D as the main interrupting element. Its zero-Qrr body diode blocks reverse current within microseconds and the 1200 V Vdss absorbs inductive kick from a tripped load. Two C3M0080120D in anti-series form the bidirectional switch.
تجویز کردہ
High-Frequency LLC and Phase-Shift Resonant Converter
In 10-30 kW LLC and phase-shift full-bridge converters for EV charging and battery formation, the C3M0080120D's low output capacitance (Coss) and zero reverse-recovery enable ZVS at 200-500 kHz. This shrinks magnetics by 3-4x versus 20 kHz silicon IGBT designs while maintaining >97% peak efficiency across the load range.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا C3M0080120D — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | C2M0080120D | C3M0080120J | C3M0160120D | NVHL080N120SC1 | SCT3080KL | IMW120R080M2H |
|---|---|---|---|---|---|---|---|
| Brand | Wolfspeed | Wolfspeed | Wolfspeed | Wolfspeed | onsemi | ROHM Semiconductor | Infineon |
| Package | TO-247-3 | TO-247-3 (same) | TO-247-4 (Kelvin, NOT pin-compatible for slot 4) | TO-247-3 (same) | TO-247-3 (same) | TO-247-3 (same) | TO-247-3 (same) |
| Drain-Source Voltage (Vdss) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Rds(on) typ | 80 mOhm | 80 mOhm | 80 mOhm | 160 mOhm | 80 mOhm | 80 mOhm | 80 mOhm |
| Continuous Drain Current | 36 A | 36 A | 36 A | 24 A | 34 A | 31 A | 36 A |
| Technology Generation | C3M (3rd gen) | C2M (2nd gen) | C3M (3rd gen) | C3M (3rd gen) | EliteSiC | 4th-gen SiC | CoolSiC G2 |
| Recommended Gate Drive | +15 V / -3 V | +15 V / -3 V | +15 V / -3 V | +15 V / -3 V | +18 V / -3 V | +18 V / -3 V | +15 V / -3 V |
| Body Diode Qrr | ~0 nC | ~0 nC | ~0 nC | ~0 nC | ~0 nC | ~0 nC | ~0 nC |
| Max Junction Temperature | 175 C | 150 C | 175 C | 175 C | 175 C | 175 C | 175 C |
اہم امتیازی خصوصیات
- Zero reverse-recovery body diode (بمقابلہSilicon IGBT (e.g. IKW40N120H3))
- Higher maximum junction temperature (175 C vs 150 C for C2M) (بمقابلہC2M0080120D)
- Lower switching loss than silicon superjunction MOSFETs at 1200 V (بمقابلہSilicon 1200 V SJ MOSFET)
ڈیزائن نوٹس
Keep the gate-drive loop (gate-driver output -> gate resistor -> MOSFET gate -> Kelvin source -> driver ground) area below 1 cm^2 to minimize parasitic inductance. Estimated: a 10 nH gate-loop inductance with 1 A di/dt produces 10 V of ringing, enough to re-trigger the device in hard-switched half-bridges. Use the C3M0080120J Kelvin-source variant if the PCB cannot accommodate a tight gate loop.
Estimated: at 36 A continuous drain current and 80 mOhm Rds(on), conduction loss is approximately 104 W at Tc = 25 C. With TO-247-3 theta_JC of ~0.45 C/W, junction rise over case is ~47 C, so Tj stays below 175 C at full load only if Tc is held below 128 C. Use a forced-air or liquid-cooled heatsink for continuous full-power operation; a 2 C/W extruded-aluminum heatsink at 1 m/s airflow is typically sufficient.
Do not drive the gate with a silicon MOSFET gate driver rated only to +12 V/-0 V; the C3M family needs +15 V/-3 V (or -5 V) for full Rds(on) and immunity to parasitic turn-on. Apply a TVS across gate-source and leave a minimum of 4 mm creepage between drain and gate traces if the PCB will see >1000 V DC link, since SiC devices switch 5-10x faster than silicon IGBTs and dv/dt is correspondingly higher.
Estimate gate-resistor sizing: total gate charge Qg for the C3M0080120D is roughly 60-100 nC; with a 10 Ohm external resistor and 18 V drive swing, peak gate current is ~1.8 A and turn-on time is ~30-50 ns. Larger Rg slows switching and reduces EMI; smaller Rg reduces switching loss. Start with Rg(on) = 5-10 Ohm and Rg(off) = 2-5 Ohm, then tune to meet conducted-EMI margins.
تعمیل کی معلومات
TO-247-3 through-hole power package is not subject to AEC-Q100 automotive qualification in this part number; wolfspeed offers AEC-Q101 variants in the same family for traction. RoHS and REACH compliant per wolfspeed product page. Halogen-free status not explicitly stated in datasheet - treat as unknown.
