C3M0080120D - 1200V 80mOhm SiC MOSFET, TO-247-3 | Wolfspeed
MPN: C3M0080120D ✓ Hoạt độngC3M0080120D Tóm tắt
A Silicon Carbide MOSFET (SiC MOSFET) is a wide-bandgap (WBG) power transistor that switches high voltages and currents with far less loss than a silicon MOSFET or IGBT. Within the power-semiconductor taxonomy, SiC MOSFETs sit between silicon MOSFETs (limited to ~600-900 V practical breakdown) and emerging GaN HEMTs (typically <650 V). SiC is the dominant WBG technology for 1200 V-class traction, solar, and industrial drives, where switching frequencies of 50-200 kHz and junction temperatures of 175 C are routine.
Key features of the C3M0080120D include an 80 mOhm typical Rds(on) at Vgs=15 V, a low gate charge (Qg typical values for the C3M family are in the tens of nC), an intrinsic body diode with negligible reverse recovery (Qrr), and a maximum operating junction temperature of 175 C. The TO-247-3 package provides a low thermal-resistance path and a standard through-hole footprint that drops into any 1200 V-class SiC design.
Typical applications include EV onboard chargers and DC-DC converters, solar string inverters, industrial motor drives, telecom rectifiers, and solid-state circuit breakers. The C3M platform is designed for hard-switched and soft-switched topologies where its low switching loss and high-temperature tolerance reduce heatsink, magnetics, and cooling cost.
When designing with the C3M0080120D, drive the gate at +15 V/-3 V to -5 V for best Rds(on) and immunity to parasitic turn-on; use a Kelvin-source TO-247 variant (C3M0080120J) if gate-loop inductance is a concern. Always derate to keep Tj below 150 C in hard-switched designs for long-term reliability.
Bộ thay thế dễ dàng lắp đặt cho C3M0080120D — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với C3M0080120D (cùng hình factor và footprint) — khác nhau ở Manufacturer, Package, Technology.
C2M0080120D
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
C3M0080120J
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
C3M0160120D
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
NVHL080N120SC1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
SCT3080KL
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IMW120R080M2H
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
C3M0080120D Tỷ lệ tối đa & tính chất điện
| Manufacturer | Wolfspeed |
| Part Number | C3M0080120D |
| Technology | Silicon Carbide (SiC) Power MOSFET, 3rd generation (C3M) |
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vdss) | 1200 V |
| On-Resistance Rds(on) typ | 80 mOhm |
| Continuous Drain Current (Tc) | 36 A |
| Power Dissipation (Tc) | 192 W |
| Gate-Source Voltage (Vgs max) | -10 V to +25 V (recommended +15/-3 V) |
| Nhiệt độ mối nối hoạt động | -55 C to +175 C |
| Hộp | TO-247-3 (through-hole, 3 leads + tab) |
| Kiểu lắp đặt | Through Hole |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
| Body Diode | Intrinsic, zero reverse recovery (Qrr) |
Cấu hình chân C3M0080120D
| Chân 1 | Gate — Gate drive input, +15 V on / -3 to -5 V off recommended |
| Chân 2 | Drain — Power drain, internally tied to the metal mounting tab |
| Chân 3 | Source — Power source, return for gate drive loop |
Khu vực hoạt động an toàn (DC, Tc = 25 C)
Ứng dụng tiêu biểu
C3M0080120D phù hợp cho 6 Áp dụngs: EV Onboard Charger and DC-DC Converter, Solar String Inverter PFC and Boost, Industrial Motor Drive Inverter, Telecom and Server Rectifier, Solid-State Circuit Breaker, High-Frequency LLC and Phase-Shift Resonant Converter.
EV Onboard Charger and DC-DC Converter
The C3M0080120D's 1200 V rating, 80 mOhm Rds(on) and zero reverse-recovery body diode make it the dominant choice for 11 kW-22 kW EV onboard chargers and high-voltage DC-DC stages. In a totem-pole PFC at 100 kHz, the C3M0080120D delivers >98% efficiency and keeps Tj below 150 C with a modest extruded-aluminum heatsink. Compared with silicon superjunction MOSFETs it eliminates diode reverse-recovery loss, and compared with 1200 V IGBTs it roughly halves switching loss.
Được đề xuất
Solar String Inverter PFC and Boost
In 1500 V DC solar string inverters, the C3M0080120D is used in the boost PFC and DC-AC bridge stages at switching frequencies up to 100 kHz. The 1200 V Vdss comfortably handles 1000-1100 V DC link stress with 80% derating, while the 80 mOhm Rds(on) keeps conduction loss in the 1-2% range at full power. Its 175 C Tj rating allows fan-less outdoor enclosures in desert climates.
Được đề xuất
Industrial Motor Drive Inverter
The C3M0080120D powers 5 kW-15 kW servo and industrial-drive inverters switching at 20-50 kHz. At these frequencies silicon IGBTs lose ~2-3% efficiency, while the C3M0080120D keeps total loss under 1.5% with the same heatsink. The TO-247-3 footprint matches legacy IGBT modules, simplifying retrofit upgrades without mechanical redesign.
Được đề xuất
Telecom and Server Rectifier
380 V HVDC and 48 V bus telecom rectifiers built around the C3M0080120D reach 96-98% efficiency at 100 kHz switching, slashing cooling OpEx in dense data-center shelves. The 1200 V rating supports universal 200-480 Vac PFC front-ends, and the SiC body diode eliminates reverse-recovery-induced EMI common in silicon bridge rectifiers.
Được đề xuất
Solid-State Circuit Breaker
Bidirectional solid-state circuit breakers (SSCBs) for 800 V EV and 1000 V DC solar buses use the C3M0080120D as the main interrupting element. Its zero-Qrr body diode blocks reverse current within microseconds and the 1200 V Vdss absorbs inductive kick from a tripped load. Two C3M0080120D in anti-series form the bidirectional switch.
Được đề xuất
High-Frequency LLC and Phase-Shift Resonant Converter
In 10-30 kW LLC and phase-shift full-bridge converters for EV charging and battery formation, the C3M0080120D's low output capacitance (Coss) and zero reverse-recovery enable ZVS at 200-500 kHz. This shrinks magnetics by 3-4x versus 20 kHz silicon IGBT designs while maintaining >97% peak efficiency across the load range.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho C3M0080120D — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | C2M0080120D | C3M0080120J | C3M0160120D | NVHL080N120SC1 | SCT3080KL | IMW120R080M2H |
|---|---|---|---|---|---|---|---|
| Brand | Wolfspeed | Wolfspeed | Wolfspeed | Wolfspeed | onsemi | ROHM Semiconductor | Infineon |
| Package | TO-247-3 | TO-247-3 (same) | TO-247-4 (Kelvin, NOT pin-compatible for slot 4) | TO-247-3 (same) | TO-247-3 (same) | TO-247-3 (same) | TO-247-3 (same) |
| Drain-Source Voltage (Vdss) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Rds(on) typ | 80 mOhm | 80 mOhm | 80 mOhm | 160 mOhm | 80 mOhm | 80 mOhm | 80 mOhm |
| Continuous Drain Current | 36 A | 36 A | 36 A | 24 A | 34 A | 31 A | 36 A |
| Technology Generation | C3M (3rd gen) | C2M (2nd gen) | C3M (3rd gen) | C3M (3rd gen) | EliteSiC | 4th-gen SiC | CoolSiC G2 |
| Recommended Gate Drive | +15 V / -3 V | +15 V / -3 V | +15 V / -3 V | +15 V / -3 V | +18 V / -3 V | +18 V / -3 V | +15 V / -3 V |
| Body Diode Qrr | ~0 nC | ~0 nC | ~0 nC | ~0 nC | ~0 nC | ~0 nC | ~0 nC |
| Max Junction Temperature | 175 C | 150 C | 175 C | 175 C | 175 C | 175 C | 175 C |
Bảo phân biệt quan trọng
- Zero reverse-recovery body diode (vsSilicon IGBT (e.g. IKW40N120H3))
- Higher maximum junction temperature (175 C vs 150 C for C2M) (vsC2M0080120D)
- Lower switching loss than silicon superjunction MOSFETs at 1200 V (vsSilicon 1200 V SJ MOSFET)
Ghi chú thiết kế
Keep the gate-drive loop (gate-driver output -> gate resistor -> MOSFET gate -> Kelvin source -> driver ground) area below 1 cm^2 to minimize parasitic inductance. Estimated: a 10 nH gate-loop inductance with 1 A di/dt produces 10 V of ringing, enough to re-trigger the device in hard-switched half-bridges. Use the C3M0080120J Kelvin-source variant if the PCB cannot accommodate a tight gate loop.
Estimated: at 36 A continuous drain current and 80 mOhm Rds(on), conduction loss is approximately 104 W at Tc = 25 C. With TO-247-3 theta_JC of ~0.45 C/W, junction rise over case is ~47 C, so Tj stays below 175 C at full load only if Tc is held below 128 C. Use a forced-air or liquid-cooled heatsink for continuous full-power operation; a 2 C/W extruded-aluminum heatsink at 1 m/s airflow is typically sufficient.
Do not drive the gate with a silicon MOSFET gate driver rated only to +12 V/-0 V; the C3M family needs +15 V/-3 V (or -5 V) for full Rds(on) and immunity to parasitic turn-on. Apply a TVS across gate-source and leave a minimum of 4 mm creepage between drain and gate traces if the PCB will see >1000 V DC link, since SiC devices switch 5-10x faster than silicon IGBTs and dv/dt is correspondingly higher.
Estimate gate-resistor sizing: total gate charge Qg for the C3M0080120D is roughly 60-100 nC; with a 10 Ohm external resistor and 18 V drive swing, peak gate current is ~1.8 A and turn-on time is ~30-50 ns. Larger Rg slows switching and reduces EMI; smaller Rg reduces switching loss. Start with Rg(on) = 5-10 Ohm and Rg(off) = 2-5 Ohm, then tune to meet conducted-EMI margins.
Thông tin tuân thủ
TO-247-3 through-hole power package is not subject to AEC-Q100 automotive qualification in this part number; wolfspeed offers AEC-Q101 variants in the same family for traction. RoHS and REACH compliant per wolfspeed product page. Halogen-free status not explicitly stated in datasheet - treat as unknown.
