IGL65R080D2XUMA1 - 650V 80mΩ CoolGaN G5 Transistor | Infineon
MPN: IGL65R080D2XUMA1 ✓ فعالIGL65R080D2XUMA1 جائزہ
A GaN HEMT (high-electron-mobility transistor) is a wide-bandgap power transistor in which current flows through a two-dimensional electron gas formed at the AlGaN/GaN heterojunction. Compared with silicon MOSFETs in the same voltage class, GaN transistors offer lower on-resistance per unit area, near-zero reverse-recovery charge (Qrr), and switching speeds roughly an order of magnitude faster. These traits enable smaller magnetics, higher switching frequencies, and efficiencies above 98 percent in hard- and soft-switched topologies. GaN HEMTs belong to the broader power-semiconductor family that sits alongside silicon MOSFETs, IGBTs, and SiC MOSFETs.
Key features of the IGL65R080D2 include an 80 mΩ typical RDS(on) at 25 °C, a 650 V drain-source breakdown suitable for 400 V PFC boost and half-bridge legs, a low Qoss / Qrr that reduces dead-time losses, and an integrated gate structure compatible with standard 0–10 V gate-drive signals. The PG-TSON-8-U06 package provides a thermally efficient top-side cooling path with wettable flanks for automated optical inspection.
The MG-HEMT (metal-gate HEMT) architecture used in CoolGaN G5 keeps the channel normally-off without a cascode structure, simplifying gate-drive design and eliminating the reverse-conduction diode drop of cascode GaN. The 200 mm wafer process supports tight parametric distribution, which is critical for paralleling multiple devices in high-current converters.
Typical applications include telecom and server SMPS, USB-PD adapters, totem-pole bridgeless PFC, half-bridge LLC and hard-switched full-bridge converters, and on-board chargers for electric vehicles. Industrial motor drives and photovoltaic inverters in the 1–10 kW range also benefit from the 650 V rating.
When designing around this device, select a gate driver rated for the G5 turn-on threshold and place the gate-loop return as close to the source Kelvin connection as possible to avoid false triggering from the power-loop di/dt.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IGL65R080D2XUMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IGL65R080D2XUMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Operating Temperature Range, Package, Technology, Drain-Source Voltage (VDS), Product Family.
IGL65R190D2XUMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IGL65R050D2XUMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IGLR70R270D2SXUMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IGLR70R200D2SXUMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC011N04NM7VATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IGL65R080D2XUMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | CoolGaN G5 |
| ٹرانزسٹر کی قسم | N-Channel GaN HEMT (enhancement-mode) |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID, Tc) | 18 A |
| Power Dissipation (PD, Tc) | 81 W |
| On-Resistance RDS(on) | 80 mΩ (typical) |
| پیکیج | PG-TSON-8-U06 (ThinPAK 8x8) |
| ماؤنٹنگ ٹائپ | Surface Mount, wettable flank |
| آپریٹنگ درجہ حرارت رینج | -55 °C to +150 °C (TJ) |
| Technology | GaN-on-Si, 200 mm wafer |
| Typical Applications | SMPS, totem-pole PFC, LLC, USB-PD adapters |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 (per JEDEC J-STD-020, where stated) |
IGL65R080D2XUMA1 پن کنفیگریشن
| پن 1 | DRAIN — Power drain connection (also thermal pad on bottom) |
| پن 2 | DRAIN — Power drain connection |
| پن 3 | GATE — Gate drive input |
| پن 4 | SENSE / Kelvin Source — Kelvin source reference for gate drive return |
| پن 5 | SOURCE — Power source connection |
| پن 6 | SOURCE — Power source connection |
| پن 7 | NC — Not connected |
| پن 8 | NC — Not connected |
محفوظ آپریٹنگ ایریا (estimated, not from datasheet graph)
عام استعمالات
IGL65R080D2XUMA1 کے لیے موزوں ہے 7 ایپلیکیشنs: Telecom and Server SMPS, Totem-Pole Bridgeless PFC, USB-PD Fast-Charge Adapters, EV On-Board Chargers (OBC), Photovoltaic Microinverters and String Inverters, Industrial Motor Drives, LED Drivers for Stage and Architectural Lighting.
Telecom and Server SMPS
The IGL65R080D2 fits 1–3 kW 48 V-output telecom and server SMPS where efficiency above 96% is mandatory for cooling and OPEX. The CoolGaN G5's 80 mΩ RDS(on) and ~1 nC Qrr keep full-bridge and LLC primary losses low at 100–300 kHz, allowing the use of smaller planar magnetics and a tighter form factor than silicon MOSFET designs. The 650 V rating provides adequate margin for 400 V PFC bulk rails, while the PG-TSON-8-U06 footprint supports wettable-flank AOI in volume manufacturing. Designers pair the part with Infineon EiceDRIVER™ gate drivers such as the 1ED3124 for safe turn-on in high-density server boards.
تجویز کردہ
Totem-Pole Bridgeless PFC
In totem-pole bridgeless PFC, the IGL65R080D2's near-zero Qrr eliminates the reverse-recovery loss that plagues silicon MOSFETs and self-commutates cleanly at 65–100 kHz. The 80 mΩ RDS(on) keeps conduction loss acceptable at 16 A continuous for 1.5–3 kW designs targeting 96–99% efficiency. CoolGaN G5's normally-off gate structure simplifies the drive to a 0–10 V rail rather than the 12–18 V required by cascode GaN. Designers typically use a digital controller such as the Infineon XDPP1140 to coordinate soft-start and valley switching.
تجویز کردہ
USB-PD Fast-Charge Adapters
USB-Power-Delivery adapters from 65 W up to 240 W demand high power density in a small, lightweight brick. The IGL65R080D2 enables QR/DCM flyback or active-clamp flyback converters running at 200–500 kHz, where the GaN transistor's Qoss and Qrr shave off switching loss directly proportional to frequency. The 650 V rating comfortably tolerates the 400 V bulk rail from a wide-range 90–264 VAC input. The thin PG-TSON-8-U06 package (8x8 mm) keeps the switching node compact, reducing EMI and helping meet USB-PD 3.1 efficiency requirements.
تجویز کردہ
EV On-Board Chargers (OBC)
On-board chargers in the 3.3–11 kW range use interleaved totem-pole PFC plus an isolated DC-DC stage, both of which the IGL65R080D2 can address in the same PG-TSON-8-U06 footprint. Automotive-grade variants in the CoolGaN family extend qualification for traction auxiliaries. Designers parallel two devices for 22 kW OBCs because the 650 V class suits 400 V battery packs without the cost premium of 1200 V SiC. The high switching frequency shrinks the magnetic and capacitive filter volume, increasing gravimetric power density - critical for vehicle mass budgets.
تجویز کردہ
Photovoltaic Microinverters and String Inverters
Single-phase PV microinverters (600–2000 W) and string inverters (5–10 kW) benefit from GaN's higher switching frequency to shrink LCL filters and isolated transformers. The IGL65R080D2's 650 V rating covers 400 VDC PV strings with safety margin, while the 80 mΩ RDS(on) keeps full-load efficiency above 98%. The ThinPAK 8x8 footprint is footprint-compatible with many existing 650 V silicon MOSFET layouts, enabling drop-in efficiency upgrades in established PV designs. CoolGaN's reverse-conduction drop of only ~1 V (vs ~3 V for cascode GaN) further reduces dead-time losses.
تجویز کردہ
Industrial Motor Drives
Variable-frequency drives from 1–10 kW benefit from GaN's switching speed to raise the PWM carrier frequency and shrink output chokes and DC-link capacitors. The IGL65R080D2 in PG-TSON-8-U06 fits 3-phase inverter legs at 400–480 VAC rectified input, with the 650 V breakdown covering the typical 700 VDC bus with appropriate derating. Fast switching enables sinusoidal currents with less audible noise and lower torque ripple - important for precision servo applications. Designers should still verify EMC compliance, as the high di/dt may require snubbers or gate-resistor tuning not needed at silicon MOSFET speeds.
تجویز کردہ
LED Drivers for Stage and Architectural Lighting
High-power stage and architectural LED drivers benefit from high-frequency switching that pushes audio-band noise well above the human hearing range. The IGL65R080D2 in a totem-pole PFC + LLC topology reaches 200 kHz+ while the 650 V rating handles universal-input PFC stages with margin. The small PG-TSON-8-U06 footprint eases high-density power supply integration inside slim LED fixtures, where every cubic centimeter matters. CoolGaN's near-zero Qrr reduces dead-time, smoothing the analog dimming curve that stage lighting designers depend on for flicker-free operation.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IGL65R080D2XUMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IGL65R190D2XUMA1 | IGL65R050D2XUMA1 | IGLR70R270D2SXUMA1 | IGLR70R200D2SXUMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSON-8-U06 | PG-TSON-8-U06 - same | PG-TSON-8-U06 - same | PG-TSON-8-U06 - same family | PG-TSON-8-U06 - same family | PG-TSON-8 - same family |
| Drain-Source Voltage (VDS) | 650 V | 650 V | 650 V | 700 V | 700 V | 40 V |
| RDS(on) typical | 80 mΩ | 190 mΩ | 50 mΩ | 270 mΩ | 200 mΩ | 1.1 mΩ |
| Technology | GaN HEMT (G5) | GaN HEMT (G5) | GaN HEMT (G5) | GaN HEMT (G5) | GaN HEMT (G5) | Silicon MOSFET (OptiMOS 7) |
| Wettable Flanks | Yes | Yes | Yes | Yes | Yes | Yes |
اہم امتیازی خصوصیات
- Lower RDS(on) within the same CoolGaN G5 footprint (بمقابلہIGL65R190D2XUMA1)
- Higher drain-source breakdown than the 700 V thinPAK family members (بمقابلہIGLR70R270D2SXUMA1)
- GaN switching performance vs silicon MOSFET (بمقابلہISC011N04NM7VATMA1)
ڈیزائن نوٹس
Estimated: at 200 kHz switching with 650 V / 18 A operation in a half-bridge, gate-loop stray inductance of 5 nH can produce ringing above 15 V at turn-off. Use the source Kelvin pin (pin 4) as the gate-driver return rather than tying it to the power source pad. Keep the gate-loop loop area under 50 mm² to suppress false turn-on.
Estimated: with RthJC ≈ 1.5 °C/W from the CoolGaN G5 datasheet family, the IGL65R080D2 junction rises only 1.5 °C above case at 1 W dissipation. The PG-TSON-8-U06 top-cooling pad can be tied to a copper pour with thermal vias for natural-convection operation, but for 81 W peak dissipation a forced-air or cold-plate heatsink is recommended. Designers should still measure RthJA in the actual PCB stack-up because the FR-4 thermal conductivity dominates.
CoolGaN G5 is enhancement-mode and normally-off, but unlike a silicon MOSFET it has no body diode with the same reverse-recovery behavior. The reverse-conduction voltage drop is approximately equal to the gate threshold voltage minus the applied off-state drive (typical -1 V if the gate is at 0 V), so the synchronous-replacement Qrr is effectively zero. Design dead-time below 50 ns to avoid hard commutation, and verify turn-on dV/dt immunity of the off-side GaN.
Use a four-layer PCB with the second layer as a continuous ground plane to provide a low-impedance return for the high-di/dt switching node. Place the high-side and low-side GaN transistors symmetrically around the transformer/inductor to balance the power loop and minimize common-mode EMI. Wettable flanks on the PG-TSON-8-U06 require a 0.25 mm lead tip extension past the pad edge for AOI inspection.
تعمیل کی معلومات
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified in the standard IGL65R080D2 variant; consult Infineon for automotive-grade CoolGaN G5 650 V options.
