IGL65R080D2XUMA1 - 650V 80mΩ CoolGaN G5 Transistor | Infineon
MPN: IGL65R080D2XUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.76 | $2.76 |
| 10 | $2.62 | $26.20 |
| 100 | $2.41 | $241.00 |
| 500 | $2.18 | $1,090.00 |
| 1,000 | $1.97 | $1,970.00 |
IGL65R080D2XUMA1 Overview
A GaN HEMT (high-electron-mobility transistor) is a wide-bandgap power transistor in which current flows through a two-dimensional electron gas formed at the AlGaN/GaN heterojunction. Compared with silicon MOSFETs in the same voltage class, GaN transistors offer lower on-resistance per unit area, near-zero reverse-recovery charge (Qrr), and switching speeds roughly an order of magnitude faster. These traits enable smaller magnetics, higher switching frequencies, and efficiencies above 98 percent in hard- and soft-switched topologies. GaN HEMTs belong to the broader power-semiconductor family that sits alongside silicon MOSFETs, IGBTs, and SiC MOSFETs.
Key features of the IGL65R080D2 include an 80 mΩ typical RDS(on) at 25 °C, a 650 V drain-source breakdown suitable for 400 V PFC boost and half-bridge legs, a low Qoss / Qrr that reduces dead-time losses, and an integrated gate structure compatible with standard 0–10 V gate-drive signals. The PG-TSON-8-U06 package provides a thermally efficient top-side cooling path with wettable flanks for automated optical inspection.
The MG-HEMT (metal-gate HEMT) architecture used in CoolGaN G5 keeps the channel normally-off without a cascode structure, simplifying gate-drive design and eliminating the reverse-conduction diode drop of cascode GaN. The 200 mm wafer process supports tight parametric distribution, which is critical for paralleling multiple devices in high-current converters.
Typical applications include telecom and server SMPS, USB-PD adapters, totem-pole bridgeless PFC, half-bridge LLC and hard-switched full-bridge converters, and on-board chargers for electric vehicles. Industrial motor drives and photovoltaic inverters in the 1–10 kW range also benefit from the 650 V rating.
When designing around this device, select a gate driver rated for the G5 turn-on threshold and place the gate-loop return as close to the source Kelvin connection as possible to avoid false triggering from the power-loop di/dt.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IGL65R080D2XUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IGL65R080D2XUMA1 (same form factor and footprint) — differing in Operating Temperature Range, Package, Technology, Drain-Source Voltage (VDS), Product Family.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IGL65R190D2XUMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IGL65R050D2XUMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IGLR70R270D2SXUMA1
✅ Drop-In✓ In Stock
$2.13 / Unit
View Datasheet →IGLR70R200D2SXUMA1
✅ Drop-In✓ In Stock
$1.24 / Unit
View Datasheet →ISC011N04NM7VATMA1
✅ Drop-In✓ In Stock
$0.41 / Unit
View Datasheet →IGL65R080D2XUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolGaN G5 |
| Transistor Type | N-Channel GaN HEMT (enhancement-mode) |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID, Tc) | 18 A |
| Power Dissipation (PD, Tc) | 81 W |
| On-Resistance RDS(on) | 80 mΩ (typical) |
| Package | PG-TSON-8-U06 (ThinPAK 8x8) |
| Mounting Type | Surface Mount, wettable flank |
| Operating Temperature Range | -55 °C to +150 °C (TJ) |
| Technology | GaN-on-Si, 200 mm wafer |
| Typical Applications | SMPS, totem-pole PFC, LLC, USB-PD adapters |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, where stated) |
IGL65R080D2XUMA1 Pin Configuration
| Pin 1 | DRAIN — Power drain connection (also thermal pad on bottom) |
| Pin 2 | DRAIN — Power drain connection |
| Pin 3 | GATE — Gate drive input |
| Pin 4 | SENSE / Kelvin Source — Kelvin source reference for gate drive return |
| Pin 5 | SOURCE — Power source connection |
| Pin 6 | SOURCE — Power source connection |
| Pin 7 | NC — Not connected |
| Pin 8 | NC — Not connected |
Safe Operating Area (estimated, not from datasheet graph)
Typical Applications
IGL65R080D2XUMA1 is suitable for 7 applications: Telecom and Server SMPS, Totem-Pole Bridgeless PFC, USB-PD Fast-Charge Adapters, EV On-Board Chargers (OBC), Photovoltaic Microinverters and String Inverters, Industrial Motor Drives, LED Drivers for Stage and Architectural Lighting.
Telecom and Server SMPS
The IGL65R080D2 fits 1–3 kW 48 V-output telecom and server SMPS where efficiency above 96% is mandatory for cooling and OPEX. The CoolGaN G5's 80 mΩ RDS(on) and ~1 nC Qrr keep full-bridge and LLC primary losses low at 100–300 kHz, allowing the use of smaller planar magnetics and a tighter form factor than silicon MOSFET designs. The 650 V rating provides adequate margin for 400 V PFC bulk rails, while the PG-TSON-8-U06 footprint supports wettable-flank AOI in volume manufacturing. Designers pair the part with Infineon EiceDRIVER™ gate drivers such as the 1ED3124 for safe turn-on in high-density server boards.
Recommended
Totem-Pole Bridgeless PFC
In totem-pole bridgeless PFC, the IGL65R080D2's near-zero Qrr eliminates the reverse-recovery loss that plagues silicon MOSFETs and self-commutates cleanly at 65–100 kHz. The 80 mΩ RDS(on) keeps conduction loss acceptable at 16 A continuous for 1.5–3 kW designs targeting 96–99% efficiency. CoolGaN G5's normally-off gate structure simplifies the drive to a 0–10 V rail rather than the 12–18 V required by cascode GaN. Designers typically use a digital controller such as the Infineon XDPP1140 to coordinate soft-start and valley switching.
Recommended
USB-PD Fast-Charge Adapters
USB-Power-Delivery adapters from 65 W up to 240 W demand high power density in a small, lightweight brick. The IGL65R080D2 enables QR/DCM flyback or active-clamp flyback converters running at 200–500 kHz, where the GaN transistor's Qoss and Qrr shave off switching loss directly proportional to frequency. The 650 V rating comfortably tolerates the 400 V bulk rail from a wide-range 90–264 VAC input. The thin PG-TSON-8-U06 package (8x8 mm) keeps the switching node compact, reducing EMI and helping meet USB-PD 3.1 efficiency requirements.
Recommended
EV On-Board Chargers (OBC)
On-board chargers in the 3.3–11 kW range use interleaved totem-pole PFC plus an isolated DC-DC stage, both of which the IGL65R080D2 can address in the same PG-TSON-8-U06 footprint. Automotive-grade variants in the CoolGaN family extend qualification for traction auxiliaries. Designers parallel two devices for 22 kW OBCs because the 650 V class suits 400 V battery packs without the cost premium of 1200 V SiC. The high switching frequency shrinks the magnetic and capacitive filter volume, increasing gravimetric power density - critical for vehicle mass budgets.
Recommended
Photovoltaic Microinverters and String Inverters
Single-phase PV microinverters (600–2000 W) and string inverters (5–10 kW) benefit from GaN's higher switching frequency to shrink LCL filters and isolated transformers. The IGL65R080D2's 650 V rating covers 400 VDC PV strings with safety margin, while the 80 mΩ RDS(on) keeps full-load efficiency above 98%. The ThinPAK 8x8 footprint is footprint-compatible with many existing 650 V silicon MOSFET layouts, enabling drop-in efficiency upgrades in established PV designs. CoolGaN's reverse-conduction drop of only ~1 V (vs ~3 V for cascode GaN) further reduces dead-time losses.
Recommended
Industrial Motor Drives
Variable-frequency drives from 1–10 kW benefit from GaN's switching speed to raise the PWM carrier frequency and shrink output chokes and DC-link capacitors. The IGL65R080D2 in PG-TSON-8-U06 fits 3-phase inverter legs at 400–480 VAC rectified input, with the 650 V breakdown covering the typical 700 VDC bus with appropriate derating. Fast switching enables sinusoidal currents with less audible noise and lower torque ripple - important for precision servo applications. Designers should still verify EMC compliance, as the high di/dt may require snubbers or gate-resistor tuning not needed at silicon MOSFET speeds.
Recommended
LED Drivers for Stage and Architectural Lighting
High-power stage and architectural LED drivers benefit from high-frequency switching that pushes audio-band noise well above the human hearing range. The IGL65R080D2 in a totem-pole PFC + LLC topology reaches 200 kHz+ while the 650 V rating handles universal-input PFC stages with margin. The small PG-TSON-8-U06 footprint eases high-density power supply integration inside slim LED fixtures, where every cubic centimeter matters. CoolGaN's near-zero Qrr reduces dead-time, smoothing the analog dimming curve that stage lighting designers depend on for flicker-free operation.
Recommended
Recommended Products Summary
Engineering reference data for IGL65R080D2XUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGL65R190D2XUMA1 | IGL65R050D2XUMA1 | IGLR70R270D2SXUMA1 | IGLR70R200D2SXUMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSON-8-U06 | PG-TSON-8-U06 - same | PG-TSON-8-U06 - same | PG-TSON-8-U06 - same family | PG-TSON-8-U06 - same family | PG-TSON-8 - same family |
| Drain-Source Voltage (VDS) | 650 V | 650 V | 650 V | 700 V | 700 V | 40 V |
| RDS(on) typical | 80 mΩ | 190 mΩ | 50 mΩ | 270 mΩ | 200 mΩ | 1.1 mΩ |
| Technology | GaN HEMT (G5) | GaN HEMT (G5) | GaN HEMT (G5) | GaN HEMT (G5) | GaN HEMT (G5) | Silicon MOSFET (OptiMOS 7) |
| Wettable Flanks | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lower RDS(on) within the same CoolGaN G5 footprint (vs IGL65R190D2XUMA1)
- Higher drain-source breakdown than the 700 V thinPAK family members (vs IGLR70R270D2SXUMA1)
- GaN switching performance vs silicon MOSFET (vs ISC011N04NM7VATMA1)
Design Notes
Estimated: at 200 kHz switching with 650 V / 18 A operation in a half-bridge, gate-loop stray inductance of 5 nH can produce ringing above 15 V at turn-off. Use the source Kelvin pin (pin 4) as the gate-driver return rather than tying it to the power source pad. Keep the gate-loop loop area under 50 mm² to suppress false turn-on.
Estimated: with RthJC ≈ 1.5 °C/W from the CoolGaN G5 datasheet family, the IGL65R080D2 junction rises only 1.5 °C above case at 1 W dissipation. The PG-TSON-8-U06 top-cooling pad can be tied to a copper pour with thermal vias for natural-convection operation, but for 81 W peak dissipation a forced-air or cold-plate heatsink is recommended. Designers should still measure RthJA in the actual PCB stack-up because the FR-4 thermal conductivity dominates.
CoolGaN G5 is enhancement-mode and normally-off, but unlike a silicon MOSFET it has no body diode with the same reverse-recovery behavior. The reverse-conduction voltage drop is approximately equal to the gate threshold voltage minus the applied off-state drive (typical -1 V if the gate is at 0 V), so the synchronous-replacement Qrr is effectively zero. Design dead-time below 50 ns to avoid hard commutation, and verify turn-on dV/dt immunity of the off-side GaN.
Use a four-layer PCB with the second layer as a continuous ground plane to provide a low-impedance return for the high-di/dt switching node. Place the high-side and low-side GaN transistors symmetrically around the transformer/inductor to balance the power loop and minimize common-mode EMI. Wettable flanks on the PG-TSON-8-U06 require a 0.25 mm lead tip extension past the pad edge for AOI inspection.
Compliance Information
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified in the standard IGL65R080D2 variant; consult Infineon for automotive-grade CoolGaN G5 650 V options.
