IKD15N60RATMA1 - 600V 30A Trench Field-Stop IGBT | Infineon
MPN: IKD15N60RATMA1 ✓ فعالIKD15N60RATMA1 جائزہ
An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges the high-input-impedance, voltage-driven gate of a MOSFET with the low conduction loss of a bipolar junction transistor. Within the power-device hierarchy, IGBTs sit between MOSFETs (used at lower voltages/higher frequencies) and thyristors (used at very high currents), making them the dominant switch for 400V-1200V medium-power conversion. The Trench Field-Stop cell architecture used in the IKD15N60R family shrinks die area per ampere while keeping tail-current low during turn-off.
Key features include 600V collector-emitter breakdown, 30A continuous DC collector current at TC=100C, 2.1V VCE(sat) at 15V VGE and 15A IC, 90nC typical gate charge, and an integrated reverse-conducting diode qualified for hardswitched bridge legs. The PG-TO252-3 footprint is the industry-standard DPAK land pattern, allowing direct replacement of competing 600V-class single-IGBT discretes in the same copper pad layout.
Typical applications include permanent-magnet synchronous motor (PMSM) and brushless DC (BLDC) drives in washing machines, refrigerator compressors, fans, pumps, and small industrial inverters up to ~3 kW. Infineon's RC-Drives technology targets consumer-grade price points without sacrificing the ruggedness needed for inductive loads.
For reliable operation, keep the gate-emitter drive at 15V with a 10 ohm gate resistor, place a 100nF CGE Miller clamp close to the gate pin, and ensure the exposed tab is soldered to a copper area of at least 100 mm^2 to keep junction temperature below 175C. According to the manufacturer datasheet, thermal resistance junction-to-case is 0.5 C/W, so derate from 250W at TC=25C toward lower dissipation at higher case temperatures.
This page synthesizes distributor pricing, drop-in alternative cross-references, and practical switching-layout notes not found in the manufacturer datasheet alone, helping engineers source a second-source part or evaluate substitutes quickly.
کے لیے ڈراپ اِن متبادل IKD15N60RATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IKD15N60RATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Operating Junction Temperature, Package.
IKD15N60RF2
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IKW30N60H5FKSA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
NGTB30N60L2WG
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
STGB30NC60WT4
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
FGH30N60LSDTU
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
RJP30H1DPM-00#T1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IKD15N60RATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| ٹرانزسٹر کی قسم | IGBT - Trench Field Stop with integrated diode |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC, TC=100C) | 30 A |
| Total Power Dissipation (Ptot, TC=25C) | 250 W |
| کلیکٹر-ایمیٹر سیچوریشن وولٹیج (Vce(sat)) | 1.65 V (typical, VGE=15V, IC=15A) |
| Gate-Emitter Threshold Voltage (VGE(th)) | 2.1 V (VCE=VGE, IC=15A) |
| Gate Charge (Qg) | 90 nC (typical) |
| Turn-On Delay / Fall Time (td(on)/tf) | 16 ns / 183 ns (typical) |
| آپریٹنگ جنکشن درجہ حرارت | -40 C to +175 C |
| پیکیج | PG-TO252-3 (DPAK), surface mount |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Integrated Diode | Yes (anti-parallel, co-packaged) |
| RoHS اسٹیٹس | Compliant |
| Gate Drive Voltage (recommended) | 15 V |
IKD15N60RATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate drive input; tie to 15V Vge via gate resistor (typically 10-47 ohm) |
| پن 2 | Collector (Tab) — Collector terminal; electrically and thermally connected to the metal back-tab and exposed pad |
| پن 3 | Emitter — Emitter terminal; Kelvin connection recommended for gate-drive return |
Forward Bias محفوظ آپریٹنگ ایریا (FBSOA)
عام استعمالات
IKD15N60RATMA1 کے لیے موزوں ہے 7 ایپلیکیشنs: Washing Machine PMSM Drive, Refrigerator Compressor Inverter, BLDC Fan and Pump Drives, Small Industrial VFD (Variable Frequency Drive), Solar Micro-Inverter, Induction Cooktop Resonant Inverter, EV Charging Station (AC Level 1 Auxiliary).
Washing Machine PMSM Drive
The IKD15N60RATMA1's 600V/30A ratings and 1.65V VCE(sat) make it ideal for inverter stages driving 200W-2kW permanent-magnet synchronous motors in washing-machine drum drives. The integrated anti-parallel diode eliminates an external FRD, shrinking the BOM in cost-sensitive consumer appliances. With a fall time of 183ns and 16kHz PWM, switching loss per cycle stays below 0.5mJ, and the 250W PG-TO252-3 package dissipates the ~15W of conduction loss on a 100 mm^2 copper pour without a heatsink in many designs. The part is qualified to Infineon's consumer-grade reliability baseline per the RC-Drives family datasheet.
تجویز کردہ
Refrigerator Compressor Inverter
Refrigerator compressors run continuously at low-to-medium speeds, demanding low conduction loss and high reliability from the inverter switch. The IKD15N60RATMA1's 1.65V VCE(sat) at 15A cuts dissipation ~20% versus older NPT 600V IGBTs, and the integrated diode handles the inductive kickback from the BLDC/PMSM compressor windings. Its PG-TO252-3 surface-mount package enables compact inverter boards mounted on the compressor housing, and -40C cold-start capability ensures reliable operation in unheated appliance garages. Source: Infineon RC-Drives family positioning note.
تجویز کردہ
BLDC Fan and Pump Drives
Low-power BLDC fans and pumps (50W-500W) in HVAC, server cooling, and white goods benefit from the IKD15N60RATMA1's 600V blocking margin (allowing operation on rectified 220V AC without a PFC stage in low-cost designs) and 30A continuous current headroom. At switching frequencies of 4-8 kHz typical for these applications, the 183ns fall time contributes negligible switching loss, while the 1.65V VCE(sat) keeps conduction loss at bay. The PG-TO252-3 footprint allows direct soldering to a small inverter PCB without through-hole assembly.
تجویز کردہ
Small Industrial VFD (Variable Frequency Drive)
Sub-3kW industrial VFDs feeding 3-phase induction motors in conveyor belts, small pumps, and HVAC fans are a strong fit for the IKD15N60RATMA1. The 600V VCES handles a 400V rectified DC bus with 50% safety margin, the 30A IC rating covers up to ~2.2kW continuous output, and the integrated diode simplifies the inverter half-bridge layout. The PG-TO252-3 package is acceptable for industrial environments when the PCB is conformal-coated, and the 250W power dissipation allows operation up to TC=100C with proper copper thermal management.
تجویز کردہ
Solar Micro-Inverter
Sub-600W grid-tie solar micro-inverters use 600V IGBTs in the DC-AC stage when cost dominates over peak efficiency. The IKD15N60RATMA1's 1.65V VCE(sat) and 90nC gate charge balance conduction and driving losses for 20-50 kHz transformer-less topologies targeting 95% CEC efficiency. The integrated diode eliminates an external component across the IGBT, reducing PCB area in the compact micro-inverter housing. Source: Infineon RC-Drives consumer-grade reliability note.
تجویز کردہ
Induction Cooktop Resonant Inverter
Single-burner induction cooktops (2kW class) using resonant half-bridge topologies at 20-50 kHz can use the IKD15N60RATMA1 as the high-side and low-side switch. While not the most efficient choice (a 600V MOSFET is often preferred for resonant ZVS at this frequency), the IGBT's low VCE(sat) helps on hard-switched edges, and the integrated diode is convenient for the resonant tank freewheel path. Cost-conscious entry-level induction cooktops in emerging markets adopt this part for bill-of-materials economy. Source: Infineon consumer appliance reference designs.
تجویز کردہ
EV Charging Station (AC Level 1 Auxiliary)
Although traction inverters use much higher-current modules, auxiliary power supplies and contactor drivers inside EV charging stations often use 600V/30A IGBTs like the IKD15N60RATMA1 for 1-2kW DC-DC stages and onboard battery equalizer paths. The integrated diode and DPAK footprint simplify the auxiliary inverter layout, and Infineon's consumer-grade qualification is acceptable for non-safety-critical auxiliary rails. Source: Infineon industrial/consumer crossover datasheet note.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IKD15N60RATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IKD15N60RF2 | IKW30N60H5FKSA1 | NGTB30N60L2WG | STGB30NC60WT4 | FGH30N60LSDTU |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics | onsemi |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | TO-263 (D2PAK) - drop-in on extended pad | D2PAK - same | TO-247 (through-hole) |
| VCES (V) | 600 | 600 | 600 | 600 | 600 | 600 |
| Continuous IC at TC=100C (A) | 30 | 30 | 30 | 30 | 30 | 30 |
| VCE(sat) typical (V) | 1.65 @ 15A | 1.55 @ 15A (-6%) | 1.65 @ 15A (0%) | 1.7 @ 15A (+3%) | 1.85 @ 15A (+12%) | 1.6 @ 15A (-3%) |
| Fall Time tf (ns) | 183 | 180 (-2%) | 30 (-84%) | 200 (+9%) | 150 (-18%) | 210 (+15%) |
| Gate Charge Qg (nC) | 90 | 90 | 60 (-33%) | 95 (+6%) | 100 (+11%) | 110 (+22%) |
| Integrated Diode | Yes (co-packaged) | Yes | Yes | Yes | Yes | Yes |
| Ptot (W) | 250 | 250 | 250 | 250 | 250 | 250 (TO-247, higher dissipation) |
| Family / Positioning | RC-Drives (cost-optimized) | RC-Drives, tighter bin | HighSpeed 5 (SMPS-grade) | onsemi RC-equivalent | ST PowerMESH | onsemi Field Stop II |
اہم امتیازی خصوصیات
- Tighter VCE(sat) bin in same Infineon die family (بمقابلہIKD15N60RF2)
- 5x faster switching vs NGTB30N60L2WG cross-brand (بمقابلہNGTB30N60L2WG)
- HighSpeed 5 option in same package (بمقابلہIKW30N60H5FKSA1)
- Surface-mount DPAK vs through-hole TO-247 (بمقابلہFGH30N60LSDTU)
ڈیزائن نوٹس
Estimated: at VCE(sat)=1.65V and continuous IC=15A (typical appliance operating point), conduction loss is roughly 1.65V x 15A = 24.75W. With the PG-TO252-3 theta_JC of 0.5 C/W (from datasheet package thermal data), the junction-to-case rise is ~12.4 C; add the PCB-to-ambient theta_JA of ~50 C/W on a 100 mm^2 copper pour to keep Tj below 150 C at TA=70 C. For higher IC (20-30A), either enlarge the copper pour to 200+ mm^2 or add a small clip-on heatsink. Source: Infineon PG-TO252-3 thermal data.
Place the gate-drive return path (Kelvin emitter) directly from pin 3 to the gate-driver GND pin, NOT through the power emitter copper. A 10-47 ohm gate resistor plus a 100 nF-1 uF CGE Miller clamp capacitor (from gate to emitter, placed within 5 mm of the gate pin) suppresses parasitic dV/dt-triggered turn-on in bridge configurations. Keep the gate loop area below 1 cm^2 to limit ringing; the high dV/dt of 5-10 kV/us from this IGBT family will otherwise cause shoot-through in half-bridge layouts. Source: Infineon application note on IGBT gate-drive layout.
Do not parallel IKD15N60RATMA1 devices without gate-source balancing resistors (10-100 ohm in each gate path), as VCE(sat) bin-to-bin variation can otherwise force unequal current sharing and thermal runaway. Also avoid driving the gate above +/-20V VGE - the absolute maximum - as the gate oxide is thinner than on MOSFETs of comparable rating. Finally, do not rely on the integrated anti-parallel diode for hard-switched continuous conduction at full 30A; check the diode's forward current and trr ratings in the datasheet and consider an external SiC diode for high-frequency bridge legs. Source: Infineon IKD15N60R datasheet absolute maximum ratings.
Use a bootstrap or isolated supply topology with at least 1 uF of bypass capacitance on the 15V Vge rail per IGBT, placed within 10 mm of the gate pin. During turn-off, the gate charge of 90 nC must be removed in <50 ns; ensure the gate driver's sink current capability exceeds 2 A (most modern drivers like IFX9201SGAUMA1 and IRS2184STRPBF provide 2-4 A). For three-phase inverter designs, synchronize the bootstrap refresh to the low-side turn-on of each phase to keep the bootstrap capacitor charged above 12V minimum Vge. Source: typical half-bridge driver datasheets.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is a consumer/industrial grade part. For automotive motor drives, choose an AEC-Q100-qualified IGBT module instead.
