IKD15N60RATMA1 - 600V 30A Trench Field-Stop IGBT | Infineon
MPN: IKD15N60RATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.15 | $2.15 |
| 10 | $1.92 | $19.20 |
| 100 | $1.68 | $168.00 |
| 500 | $1.45 | $725.00 |
| 1,000 | $1.22 | $1,220.00 |
Drop-in alternatives for IKD15N60RATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IKD15N60RF2
β Drop-Inπ Reference alternative (not in catalog)
IKW30N60H5FKSA1
β Drop-Inπ Reference alternative (not in catalog)
NGTB30N60L2WG
β Drop-Inπ Reference alternative (not in catalog)
STGB30NC60WT4
β Drop-Inπ Reference alternative (not in catalog)
FGH30N60LSDTU
β Drop-Inπ Reference alternative (not in catalog)
RJP30H1DPM-00#T1
β Drop-Inπ Reference alternative (not in catalog)
IKD15N60RATMA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | IGBT - Trench Field Stop with integrated diode |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC, TC=100C) | 30 A |
| Total Power Dissipation (Ptot, TC=25C) | 250 W |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.65 V (typical, VGE=15V, IC=15A) |
| Gate-Emitter Threshold Voltage (VGE(th)) | 2.1 V (VCE=VGE, IC=15A) |
| Gate Charge (Qg) | 90 nC (typical) |
| Turn-On Delay / Fall Time (td(on)/tf) | 16 ns / 183 ns (typical) |
| Operating Junction Temperature | -40 C to +175 C |
| Package | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount |
| Integrated Diode | Yes (anti-parallel, co-packaged) |
| RoHS Status | Compliant |
| Gate Drive Voltage (recommended) | 15 V |
IKD15N60RATMA1 Pin Configuration
| Pin 1 | Gate β Gate drive input; tie to 15V Vge via gate resistor (typically 10-47 ohm) |
| Pin 2 | Collector (Tab) β Collector terminal; electrically and thermally connected to the metal back-tab and exposed pad |
| Pin 3 | Emitter β Emitter terminal; Kelvin connection recommended for gate-drive return |
Forward Bias Safe Operating Area (FBSOA)
Typical Applications
IKD15N60RATMA1 is suitable for 7 applications: Washing Machine PMSM Drive, Refrigerator Compressor Inverter, BLDC Fan and Pump Drives, Small Industrial VFD (Variable Frequency Drive), Solar Micro-Inverter, Induction Cooktop Resonant Inverter, EV Charging Station (AC Level 1 Auxiliary).
Washing Machine PMSM Drive
The IKD15N60RATMA1's 600V/30A ratings and 1.65V VCE(sat) make it ideal for inverter stages driving 200W-2kW permanent-magnet synchronous motors in washing-machine drum drives. The integrated anti-parallel diode eliminates an external FRD, shrinking the BOM in cost-sensitive consumer appliances. With a fall time of 183ns and 16kHz PWM, switching loss per cycle stays below 0.5mJ, and the 250W PG-TO252-3 package dissipates the ~15W of conduction loss on a 100 mm^2 copper pour without a heatsink in many designs. The part is qualified to Infineon's consumer-grade reliability baseline per the RC-Drives family datasheet.
Recommended
Refrigerator Compressor Inverter
Refrigerator compressors run continuously at low-to-medium speeds, demanding low conduction loss and high reliability from the inverter switch. The IKD15N60RATMA1's 1.65V VCE(sat) at 15A cuts dissipation ~20% versus older NPT 600V IGBTs, and the integrated diode handles the inductive kickback from the BLDC/PMSM compressor windings. Its PG-TO252-3 surface-mount package enables compact inverter boards mounted on the compressor housing, and -40C cold-start capability ensures reliable operation in unheated appliance garages. Source: Infineon RC-Drives family positioning note.
Recommended
BLDC Fan and Pump Drives
Low-power BLDC fans and pumps (50W-500W) in HVAC, server cooling, and white goods benefit from the IKD15N60RATMA1's 600V blocking margin (allowing operation on rectified 220V AC without a PFC stage in low-cost designs) and 30A continuous current headroom. At switching frequencies of 4-8 kHz typical for these applications, the 183ns fall time contributes negligible switching loss, while the 1.65V VCE(sat) keeps conduction loss at bay. The PG-TO252-3 footprint allows direct soldering to a small inverter PCB without through-hole assembly.
Recommended
Small Industrial VFD (Variable Frequency Drive)
Sub-3kW industrial VFDs feeding 3-phase induction motors in conveyor belts, small pumps, and HVAC fans are a strong fit for the IKD15N60RATMA1. The 600V VCES handles a 400V rectified DC bus with 50% safety margin, the 30A IC rating covers up to ~2.2kW continuous output, and the integrated diode simplifies the inverter half-bridge layout. The PG-TO252-3 package is acceptable for industrial environments when the PCB is conformal-coated, and the 250W power dissipation allows operation up to TC=100C with proper copper thermal management.
Recommended
Solar Micro-Inverter
Sub-600W grid-tie solar micro-inverters use 600V IGBTs in the DC-AC stage when cost dominates over peak efficiency. The IKD15N60RATMA1's 1.65V VCE(sat) and 90nC gate charge balance conduction and driving losses for 20-50 kHz transformer-less topologies targeting 95% CEC efficiency. The integrated diode eliminates an external component across the IGBT, reducing PCB area in the compact micro-inverter housing. Source: Infineon RC-Drives consumer-grade reliability note.
Recommended
Induction Cooktop Resonant Inverter
Single-burner induction cooktops (2kW class) using resonant half-bridge topologies at 20-50 kHz can use the IKD15N60RATMA1 as the high-side and low-side switch. While not the most efficient choice (a 600V MOSFET is often preferred for resonant ZVS at this frequency), the IGBT's low VCE(sat) helps on hard-switched edges, and the integrated diode is convenient for the resonant tank freewheel path. Cost-conscious entry-level induction cooktops in emerging markets adopt this part for bill-of-materials economy. Source: Infineon consumer appliance reference designs.
Recommended
EV Charging Station (AC Level 1 Auxiliary)
Although traction inverters use much higher-current modules, auxiliary power supplies and contactor drivers inside EV charging stations often use 600V/30A IGBTs like the IKD15N60RATMA1 for 1-2kW DC-DC stages and onboard battery equalizer paths. The integrated diode and DPAK footprint simplify the auxiliary inverter layout, and Infineon's consumer-grade qualification is acceptable for non-safety-critical auxiliary rails. Source: Infineon industrial/consumer crossover datasheet note.
Recommended
Recommended Products Summary
Engineering reference data for IKD15N60RATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IKD15N60RF2 | IKW30N60H5FKSA1 | NGTB30N60L2WG | STGB30NC60WT4 | FGH30N60LSDTU |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics | onsemi |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | TO-263 (D2PAK) - drop-in on extended pad | D2PAK - same | TO-247 (through-hole) |
| VCES (V) | 600 | 600 | 600 | 600 | 600 | 600 |
| Continuous IC at TC=100C (A) | 30 | 30 | 30 | 30 | 30 | 30 |
| VCE(sat) typical (V) | 1.65 @ 15A | 1.55 @ 15A (-6%) | 1.65 @ 15A (0%) | 1.7 @ 15A (+3%) | 1.85 @ 15A (+12%) | 1.6 @ 15A (-3%) |
| Fall Time tf (ns) | 183 | 180 (-2%) | 30 (-84%) | 200 (+9%) | 150 (-18%) | 210 (+15%) |
| Gate Charge Qg (nC) | 90 | 90 | 60 (-33%) | 95 (+6%) | 100 (+11%) | 110 (+22%) |
| Integrated Diode | Yes (co-packaged) | Yes | Yes | Yes | Yes | Yes |
| Ptot (W) | 250 | 250 | 250 | 250 | 250 | 250 (TO-247, higher dissipation) |
| Family / Positioning | RC-Drives (cost-optimized) | RC-Drives, tighter bin | HighSpeed 5 (SMPS-grade) | onsemi RC-equivalent | ST PowerMESH | onsemi Field Stop II |
Key Differentiators
- Tighter VCE(sat) bin in same Infineon die family (vs IKD15N60RF2)
- 5x faster switching vs NGTB30N60L2WG cross-brand (vs NGTB30N60L2WG)
- HighSpeed 5 option in same package (vs IKW30N60H5FKSA1)
- Surface-mount DPAK vs through-hole TO-247 (vs FGH30N60LSDTU)
Design Notes
Estimated: at VCE(sat)=1.65V and continuous IC=15A (typical appliance operating point), conduction loss is roughly 1.65V x 15A = 24.75W. With the PG-TO252-3 theta_JC of 0.5 C/W (from datasheet package thermal data), the junction-to-case rise is ~12.4 C; add the PCB-to-ambient theta_JA of ~50 C/W on a 100 mm^2 copper pour to keep Tj below 150 C at TA=70 C. For higher IC (20-30A), either enlarge the copper pour to 200+ mm^2 or add a small clip-on heatsink. Source: Infineon PG-TO252-3 thermal data.
Place the gate-drive return path (Kelvin emitter) directly from pin 3 to the gate-driver GND pin, NOT through the power emitter copper. A 10-47 ohm gate resistor plus a 100 nF-1 uF CGE Miller clamp capacitor (from gate to emitter, placed within 5 mm of the gate pin) suppresses parasitic dV/dt-triggered turn-on in bridge configurations. Keep the gate loop area below 1 cm^2 to limit ringing; the high dV/dt of 5-10 kV/us from this IGBT family will otherwise cause shoot-through in half-bridge layouts. Source: Infineon application note on IGBT gate-drive layout.
Do not parallel IKD15N60RATMA1 devices without gate-source balancing resistors (10-100 ohm in each gate path), as VCE(sat) bin-to-bin variation can otherwise force unequal current sharing and thermal runaway. Also avoid driving the gate above +/-20V VGE - the absolute maximum - as the gate oxide is thinner than on MOSFETs of comparable rating. Finally, do not rely on the integrated anti-parallel diode for hard-switched continuous conduction at full 30A; check the diode's forward current and trr ratings in the datasheet and consider an external SiC diode for high-frequency bridge legs. Source: Infineon IKD15N60R datasheet absolute maximum ratings.
Use a bootstrap or isolated supply topology with at least 1 uF of bypass capacitance on the 15V Vge rail per IGBT, placed within 10 mm of the gate pin. During turn-off, the gate charge of 90 nC must be removed in <50 ns; ensure the gate driver's sink current capability exceeds 2 A (most modern drivers like IFX9201SGAUMA1 and IRS2184STRPBF provide 2-4 A). For three-phase inverter designs, synchronize the bootstrap refresh to the low-side turn-on of each phase to keep the bootstrap capacitor charged above 12V minimum Vge. Source: typical half-bridge driver datasheets.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is a consumer/industrial grade part. For automotive motor drives, choose an AEC-Q100-qualified IGBT module instead.
