IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
MPN: IPB120P04P4L03ATMA2 ✓ فعالIPB120P04P4L03ATMA2 جائزہ
What is a P-channel MOSFET? A P-channel metal-oxide-semiconductor field-effect transistor (P-channel MOSFET) is a type of power transistor that conducts when its gate is pulled below the source potential. In the system taxonomy, a P-channel MOSFET sits under: MOSFET -> power transistor -> discrete semiconductor -> power management component. P-channel devices are commonly used for high-side switching because they can be placed directly on the positive rail without a charge pump in some topologies, although N-channel MOSFETs generally offer lower RDS(on) for the same silicon area.
Key features include a 40 V drain-source breakdown (V(BR)DSS), a continuous drain current rating of 120 A at case temperature 25 °C, pulsed current capability for motor inrush, an industry-standard D2PAK footprint, and an operating junction temperature range up to 175 °C. The '03' designator indicates an OptiMOS-P2 generation with optimized body diode reverse recovery and Qrr for synchronous-rectification-friendly behavior.
Typical applications include high-side motor bridges in 12 V/24 V automotive systems (e.g., window lift, seat control, HVAC blowers), electronic fuse (e-fuse) and load switch circuits, reverse-battery protection blocks, DC-DC converter high-side switches, and battery management isolation FETs. The P-channel polarity eliminates the bootstrap supply needed for N-channel high-side drivers, simplifying gate drive.
When designing with this device, gate drive must swing below the source rail to fully enhance the channel. A 10 V gate drive is typical, and TVS protection on the gate is recommended in motor applications where dv/dt and back-EMF transients couple into the gate loop.
کے لیے ڈراپ اِن متبادل IPB120P04P4L03ATMA2 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPB120P04P4L03ATMA2 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Operating Temperature Range, Drain-Source Voltage (VDS), Pin Count, Transistor Type.
IPB120P04P4L03ATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPB180P04P4L02ATMA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD50P04P413ATMA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD50P04P4L11ATMA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRF4905SPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFR4905TRPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPB120P04P4L03ATMA2 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Transistor Polarity | P-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 120 A |
| Power Dissipation (PD, Tc=25C) | 136 W |
| On-Resistance (RDS(on)) | 3.1 mΩ (typ, per Infineon summary) |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +175C |
| پیکیج | PG-TO263-3-2 (D2PAK) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Technology Family | OptiMOS-P2 |
| Configuration | Single P-Channel MOSFET |
| پن کی تعداد | 3 (Gate, Drain, Source) |
| RoHS اسٹیٹس | Compliant (per Infineon product page) |
IPB120P04P4L03ATMA2 پن کنفیگریشن
| پن 1 | Gate — Gate control input; pull ~10 V below source to fully enhance the P-channel |
| پن 2 | Drain — Drain terminal (also bonded to metal tab); connected to load side |
| پن 3 | Source — Source terminal; connected to battery positive in high-side P-channel configuration |
محفوظ آپریٹنگ ایریا (DC, Tj=175C)
عام استعمالات
IPB120P04P4L03ATMA2 کے لیے موزوں ہے 6 ایپلیکیشنs: 12V Automotive High-Side Motor Bridge, Electronic Fuse (e-Fuse) and Hot-Swap Protection, Reverse-Battery Protection Block, Industrial 24V DC Load Switch, Battery Management Isolation FET, High-Current DC-DC Converter High-Side Switch.
12V Automotive High-Side Motor Bridge
The IPB120P04P4L03ATMA2 fits 12 V automotive high-side motor bridges because its 40 V V(BR)DSS provides ample headroom above the 12 V nominal bus while tolerating load-dump transients up to ~35 V. The P-channel polarity eliminates the need for a bootstrap supply or charge pump that an N-channel high-side switch would require, simplifying gate drive to a single low-side gate driver. The 120 A continuous ID rating comfortably handles motor inrush for window lift, seat control, HVAC blowers, and door-lock actuators. The 3.1 mΩ RDS(on) keeps conduction loss at ~37 W at 110 A RMS, which the D2PAK tab can dissipate with a properly designed copper pour.
تجویز کردہ
Electronic Fuse (e-Fuse) and Hot-Swap Protection
The IPB120P04P4L03ATMA2's 40 V rating and 120 A ID make it ideal for solid-state e-fuse circuits that protect downstream electronics from over-current and short-circuit events on 12 V/24 V distribution buses. The P-channel placement on the high side allows the load to be disconnected by simply pulling the gate to the source potential, which is easily done by a small microcontroller GPIO plus gate resistor. The 3.1 mΩ RDS(on) keeps the voltage drop across the e-fuse low during normal operation, reducing steady-state power dissipation. OptiMOS-P2's optimized body diode supports switching transients without latch-up.
تجویز کردہ
Reverse-Battery Protection Block
In reverse-battery protection circuits for 12 V/24 V automotive ECUs, the IPB120P04P4L03ATMA2 placed in series with the positive rail blocks reverse current when the battery is connected with reversed polarity. Because it is a P-channel MOSFET, the source connects to the battery positive and the drain to the load; under normal operation the gate is held at source potential (off), and a small N-channel or resistor network pulls the gate low (on). The 40 V V(BR)DSS and 120 A ID comfortably exceed the maximum forward load current and load-dump transient of typical automotive ECUs. The D2PAK package handles continuous current with appropriate PCB copper.
تجویز کردہ
Industrial 24V DC Load Switch
For 24 V industrial automation systems, the IPB120P04P4L03ATMA2 serves as a robust high-side load switch for solenoids, relay coils, and motor loads in PLCs and factory controllers. Its 40 V V(BR)DSS provides comfortable margin above the 24 V nominal plus transients, while the 120 A continuous ID accommodates high inrush from large solenoids. The P-channel configuration eliminates the level-shift complexity of an N-channel high-side switch. The D2PAK footprint is an industry-standard outline that simplifies PCB layout and heatsinking design across product variants.
تجویز کردہ
Battery Management Isolation FET
In battery management systems (BMS) for 12 V/24 V battery packs, the IPB120P04P4L03ATMA2 acts as an isolation or protection FET in series with the battery rail to disconnect the pack during fault conditions (over-current, short circuit, overtemperature). The 120 A continuous ID handles pack-level discharge currents typical of automotive and e-mobility battery packs, and the 3.1 mΩ RDS(on) minimizes voltage drop and self-heating during normal operation. The P-channel polarity allows the gate to be controlled by ground-referenced circuitry on the BMS AFE, simplifying isolation drive. The D2PAK package's thermal mass handles pulse currents during motor starts.
تجویز کردہ
High-Current DC-DC Converter High-Side Switch
The IPB120P04P4L03ATMA2 is well-suited as the high-side switch in 12 V to lower-voltage buck converters where the input voltage is below the gate-drive headroom limit of a P-channel device (i.e., output voltages above ~6 V with VGS max rating). Its low 3.1 mΩ RDS(on) reduces switching and conduction losses, and the 120 A ID supports multi-hundred-watt converter designs. The P-channel polarity removes the need for a bootstrap circuit normally required for N-channel high-side switches, reducing BOM count and complexity. OptiMOS-P2 technology provides fast switching with controlled dv/dt for low EMI.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPB120P04P4L03ATMA2 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPB120P04P4L03ATMA1 | IPB180P04P4L02ATMA2 | IPD50P04P413ATMA2 | IPD50P04P4L11ATMA2 | IRF4905SPBF | IRFR4905TRPBF |
|---|---|---|---|---|---|---|---|
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) | PG-TO252-3 (DPAK) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| V(BR)DSS | 40 V | 40 V | 40 V | 40 V | 40 V | 55 V | 55 V |
| Continuous ID (Tc=25C) | 120 A | 120 A | 180 A | 50 A | 50 A | 74 A | 74 A |
| Technology | OptiMOS-P2 | OptiMOS-P2 | OptiMOS-P2 | OptiMOS-P2 | OptiMOS-P2 | HEXFET | HEXFET |
اہم امتیازی خصوصیات
- Highest continuous ID in same-brand 40V P-channel D2PAK line (بمقابلہIPD50P04P413ATMA2)
- OptiMOS-P2 technology with optimized body diode (بمقابلہIRF4905SPBF)
- Higher current ceiling within same D2PAK footprint (بمقابلہIPB180P04P4L02ATMA2)
ڈیزائن نوٹس
The IPB120P04P4L03ATMA2 dissipates up to 136 W at Tc=25 °C, but in real PCB designs without active cooling the practical dissipation is limited by the D2PAK tab thermal resistance to the board. Estimate: at 100 A continuous through 3.1 mΩ RDS(on), conduction loss is I² × R = 100² × 0.0031 ≈ 31 W. With a typical 1 oz copper pour of 1 square inch on the drain tab, expect theta_JA around 40-50 °C/W, yielding a ~50 °C temperature rise at 31 W — adequate for many applications but designers should verify against the SOA curve for transient load events such as motor inrush. (Estimated: I=100A, R=3.1mΩ, theta_JA=40C/W.)
PCB layout for the D2PAK package must include a continuous copper pour on the drain tab with thermal vias to internal ground/power planes. Place 10-15 thermal vias (0.3 mm drill, 1 mm pitch) directly under the tab to conduct heat into inner copper layers. Source and gate traces should be sized for the peak gate-drive current (~1 A transient) and kept short to minimize parasitic inductance, which can cause gate ringing and dv/dt-induced turn-on in motor applications.
Do not assume the D2PAK tab is isolated — it is internally bonded to the drain (pin 2). For high-side P-channel switching where the tab is at battery voltage, ensure the PCB copper under the tab does not short to other circuitry. Also, gate-source voltage must never exceed ±20 V; add a 10-15 V Zener between gate and source for protection against avalanche transients from motor back-EMF or load-dump events.
Minimize the gate-drive loop area by placing the gate driver IC as close as possible to the MOSFET gate pin. For high-side P-channel configurations, use a kelvin-source connection (separate source sense trace back to the gate driver ground reference) to avoid source-inductance-induced gate-drive degradation. Add a 10 Ω gate resistor to dampen ringing and limit peak gate current during switching transitions.
تعمیل کی معلومات
RoHS compliant per Infineon product page. AEC-Q100 automotive qualification status not explicitly stated in the retrieved data; verify with Infineon sales for automotive-grade applications.
