IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
MPN: IPC100N04S5L1R5ATMA1 ✓ فعالIPC100N04S5L1R5ATMA1 جائزہ
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field applied to the gate terminal to control current flow between drain and source. OptiMOS-5 represents Infineon's fifth-generation trench MOSFET platform, offering best-in-class figure-of-merit (FOM = RDS(on) × Qg), lower package resistance and inductance, and improved switching performance versus prior generations. This part occupies the upper tier of the OptiMOS-5 40 V family alongside IPC100N04S5L-1R1 (1.1 mΩ). It is a member of the broader power MOSFET family within discrete semiconductors, sitting above generic trench MOSFETs and below wide-bandgap GaN/SiC devices in performance-per-watt.
Key features include logic-level drive (fully enhanced at VGS=4.5 V), AEC-Q101 qualification for automotive use, MSL1 moisture sensitivity up to 260 °C peak reflow, 175 °C maximum operating junction temperature, RoHS-compliant green product construction, and 100% avalanche-tested ruggedness. The SS08 leadless package minimizes parasitic source inductance, which directly reduces switching losses in high-frequency applications.
Architecturally, the device uses an enhancement-mode N-channel trench cell structure optimized for low RDS(on) per unit silicon area. At VDS=20 V and ID=50 A pulsed, the typical on-resistance reaches its datasheet figure of merit. The gate charge is balanced against output capacitance to give low switching loss in both hard-switched and soft-switched topologies. Avalanche ruggedness is verified at 100% on production units, providing margin against unclamped inductive switching events such as load-dump transients in automotive environments.
Typical applications include automotive 12 V and 24 V high-current switching such as EPS (electric power steering) motors, electronic parking brakes, brake-by-wire systems, transmission control units, battery management and protection OR-ing, hot-swap controllers, BLDC motor drives for pumps and fans, DC-DC converter synchronous rectification, and industrial high-current solenoid driving. The wide SOA at 175 °C operation also supports under-hood and chassis-mount designs with restricted cooling.
When designing with this device, ensure that the gate drive can source/sink sufficient peak current to achieve sub-100 ns switching at full load, and place the gate driver as close to the gate pad as possible to minimize the gate-loop inductance. A 10 Ω gate resistor is recommended to dampen ringing. For OR-ing, add a TVS across the drain-source path to absorb avalanche energy beyond the device's rating. The exposed pad must be soldered to a sufficiently large copper pour to keep RDS(on) rise from self-heating within safe margins.
کے لیے ڈراپ اِن متبادل IPC100N04S5L1R5ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPC100N04S5L1R5ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Operating Temperature Range, Technology, MSL Level, Series.
IPC100N04S5L-1R1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IAUCN04S7N015GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC014N04LSTATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC016N04LSGATMA1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD50N04S408ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC019N08NS5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPC100N04S5L1R5ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-5 40 V |
| Polarity / Channel Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | 40 V |
| Gate-Source Voltage (VGS) Max | 20 V |
| Continuous Drain Current (ID) at Tc=25C | 100 A |
| Power Dissipation (PD) at Tc=25C | 115 W |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) |
| آپریٹنگ درجہ حرارت رینج | -55C to +175C |
| پیکیج | PG-TDSON-8-34 (SS08 leadless) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | MSL1 (260C peak reflow) |
| AEC-Q101 Qualified | Yes |
| RoHS اسٹیٹس | Compliant (Green Product) |
| Avalanche Tested | 100% |
IPC100N04S5L1R5ATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate terminal - logic-level drive input |
| پن 2 | Source — Source terminal (pin 2) |
| پن 3 | Source — Source terminal (pin 3) |
| پن 4 | Source — Source terminal (pin 4) |
| پن 5 | Source — Source terminal (pin 5) |
| پن 6 | Source — Source terminal (pin 6) |
| پن 7 | Source — Source terminal (pin 7) |
| پن 8 | Drain — Drain terminal (also bonded to exposed pad) |
محفوظ آپریٹنگ ایریا (DC), Tj=25C
عام استعمالات
IPC100N04S5L1R5ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Electric Power Steering (EPS) Motor Drive, Automotive Battery OR-ing and Hot-Swap, BLDC Motor Drive for Pumps and Fans, Synchronous Rectification in 24V DC-DC Converters, Electronic Parking Brake and Brake-by-Wire, Industrial High-Current Solenoid and Relay Driver.
Electric Power Steering (EPS) Motor Drive
The IPC100N04S5L1R5ATMA1 is well-suited as a high-side or low-side switch in 12 V EPS motor drive H-bridges. Its 1.5 mΩ RDS(on) at VGS=10 V keeps conduction loss below 1.5 W per MOSFET at the typical 25 A RMS phase current, while its 100 A continuous rating provides 4x design margin against stall current transients. The AEC-Q101 qualification and 175 °C junction rating meet the under-hood thermal envelope. Logic-level drive (full enhancement at VGS=4.5 V) eliminates the need for a charge pump when the system MCU runs from a 5 V rail.
تجویز کردہ
Automotive Battery OR-ing and Hot-Swap
In redundant 12 V battery OR-ing and hot-swap controllers, the IPC100N04S5L1R5ATMA1 serves as the main pass-MOSFET, replacing Schottky diodes to cut conduction loss by an order of magnitude. With 1.5 mΩ RDS(on), the voltage drop at 50 A load is only 75 mV versus 500 mV for a comparable Schottky, and the resulting dissipation of 3.75 W avoids the need for thermal management beyond standard PCB copper. Its 100% avalanche-tested rating protects against reverse-current transients during battery swap events. The AEC-Q101 qualification and 175 °C operating envelope suit chassis-mounted ECUs.
تجویز کردہ
BLDC Motor Drive for Pumps and Fans
The IPC100N04S5L1R5ATMA1's 100 A continuous current capability supports 12 V BLDC water pumps, oil pumps, and cooling fans used in EV thermal management. Its 1.5 mΩ RDS(on) at VGS=10 V delivers >97% efficiency at 30 A phase current, reducing heatsink cost and enabling compact inline pump housings. The PG-TDSON-8-34 package's exposed thermal pad couples directly to the PCB copper pour, sustaining 115 W dissipation at 25 °C case temperature. Logic-level gate drive allows direct MCU PWM control without a bootstrap supply.
تجویز کردہ
Synchronous Rectification in 24V DC-DC Converters
As a synchronous rectifier in 24 V to 12 V or 24 V to 5 V buck converters, the IPC100N04S5L1R5ATMA1 replaces Schottky diodes to recover rectification loss. At 20 A load, conduction loss is only 0.6 W versus ~6 W for a comparable Schottky. Its low Qg and small Qoss reduce dead-time loss, allowing switching frequencies up to 200 kHz in compact industrial brick designs. The 40 V VDS rating provides ample margin against 24 V nominal plus transient spikes. AEC-Q101 qualification opens the design to automotive and industrial battery-powered systems.
تجویز کردہ
Electronic Parking Brake and Brake-by-Wire
The IPC100N04S5L1R5ATMA1's AEC-Q101 qualification and 175 °C operating temperature make it ideal for safety-critical electronic parking brake (EPB) actuators. With 1.5 mΩ RDS(on) and 100 A continuous rating, a single device can drive a typical 25 A peak EPB motor without thermal shutdown at 25 °C ambient. The 100% avalanche testing provides robustness against the inductive kick from the brake motor during release, eliminating the need for an external TVS clamp. The PG-TDSON-8-34 footprint fits within the actuator housing's compact PCB envelope.
تجویز کردہ
Industrial High-Current Solenoid and Relay Driver
Industrial 24 V hydraulic solenoid and latching relay drivers benefit from the IPC100N04S5L1R5ATMA1's 100 A peak current capability and 1.5 mΩ RDS(on). At a 10 A holding current, the dissipation is only 0.15 W, eliminating the heatsink requirement entirely. The logic-level gate drive allows direct connection to industrial PLC 24 V outputs via a simple gate resistor network. Its 100% avalanche rating and 175 °C junction temperature suit the harsh thermal and inductive-switching environment of factory automation control cabinets.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPC100N04S5L1R5ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPC100N04S5L-1R1 | BSC014N04LSTATMA1 | BSC016N04LSGATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 (SS08) | PG-TDSON-8-34 (SS08) - same | PG-TDSON-8-34 (SS08) - same | PG-TDSON-8-34 (SS08) - same | PG-TDSON-8-34 (SS08) - same |
| Drain-Source Voltage VDS Max | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) at VGS=10 V | 1.5 mOhm | 1.1 mOhm | 1.4 mOhm | 1.6 mOhm | 1.5 mOhm |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes |
| Operating Temperature Max | 175 C | 175 C | 175 C | 175 C | 175 C |
اہم امتیازی خصوصیات
- Lower RDS(on) variant available in identical footprint (بمقابلہIPC100N04S5L-1R1)
- Same family, optimized switching FOM (بمقابلہBSC016N04LSGATMA1)
- 100 A continuous current vs half-rated alternatives (بمقابلہIPD50N04S408ATMA1)
ڈیزائن نوٹس
Estimated: at ID=50 A continuous drain current and RDS(on)=1.5 mΩ, the steady-state conduction loss is approximately P=I²R=50²×0.0015=3.75 W. With the PG-TDSON-8-34 package's typical theta_JA of ~50 C/W on a 1 oz copper pour of 1 square inch, junction temperature rise is ~188 C above ambient, which exceeds the 175 C rating. For continuous 50 A operation, increase the copper pour to at least 4 square inches on both top and bottom layers, or add thermal vias to a bottom-side heat-spreader plane. Below 30 A continuous, the standard 1 square inch copper pour is sufficient.
Place the gate driver within 5 mm of the gate pad to minimize gate-loop inductance. Use a microstrip layout where the gate trace runs over a continuous ground/power plane to control characteristic impedance around 50 Ω. Add a 10 Ω gate-source resistor to dampen ringing caused by the gate-source capacitance and the parasitic gate-loop inductance. Keep the source pad return path wide and short - source inductance directly couples into the gate-drive loop and can cause avalanche at turn-off. The exposed pad must be soldered to a continuous copper pour with multiple thermal vias for rated thermal performance.
Do not exceed VGS=20 V absolute maximum, even transiently. Use a gate-source Zener clamp (e.g. 16 V) for protection against gate-drive overvoltage from PCB-level ESD or driver failure. Do not switch at VDS above 40 V even briefly - avalanche events beyond the rated EAS can degrade the device. For OR-ing applications, ensure the body diode forward current rating is not exceeded during reverse-current commutation events; an external Schottky anti-parallel diode may be required at very high di/dt conditions. Always reference the manufacturer datasheet for EAS and thermal impedance curves when designing the safety margin.
تعمیل کی معلومات
AEC-Q101 (automotive) qualified per Infineon datasheet. RoHS compliant Green Product. MSL1 rated for 260C peak reflow. 175C max operating junction temperature.
