IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon
MPN: IAUCN04S7N015GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.85 | $4.85 |
| 10 | $4.36 | $43.60 |
| 100 | $3.59 | $359.00 |
| 500 | $3.05 | $1,525.00 |
| 1,000 | $2.62 | $2,620.00 |
| 3,000 | $2.21 | $6,630.00 |
Drop-in alternatives for IAUCN04S7N015GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IAUCN04S7N015GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 |
| Channel Type | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) | 165 A (Tc) |
| Power Dissipation (P_D) | 96 W (Tc) |
| R_DS(on) max | 1.53 mΩ at V_GS=10 V |
| Package | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Operating Junction Temperature | -55C to +175C |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| Mounting Type | Surface Mount (IMS-compatible source-down) |
| MSL Level | 1 (per JEDEC J-STD-020) |
IAUCN04S7N015GATMA1 Pin Configuration
| Pin 1 | Gate — Gate terminal - connect to gate driver, 10 V V_GS recommended for full R_DS(on) |
| Pin 2 | Source — Source terminal - internally bonded to source pad |
| Pin 3 | Drain — Drain terminal - internally bonded to drain pad |
| Pin 4 | Source Pad (exposed) — Source-down exposed pad for IMS mounting and thermal dissipation |
Safe Operating Area (DC, Tj=25C)
Typical Applications
IAUCN04S7N015GATMA1 is suitable for 6 applications: Automotive 12 V E-Fan / Water Pump Load Switch, 48 V Mild-Hybrid Synchronous Rectification, Industrial Brushless DC (BLDC) Motor Drive, High-Current Hot-Swap / OR-ing Controller, Automotive PTC Heater Switching, Server / Telecom 12 V Battery-Backup Switch.
Automotive 12 V E-Fan / Water Pump Load Switch
The IAUCN04S7N015GATMA1 fits automotive 12 V E-fan and water-pump load switching because its 1.53 mΩ R_DS(on) keeps conduction loss under 5 W even at 80 A continuous current, while the 165 A drain rating provides 2x safety margin over typical 40-80 A fan stall currents. The AEC-Q101 qualification satisfies body-electronics reliability targets, and the SSO4G source-down package dissipates heat directly to the IMS substrate, eliminating an external heatsink. Placed between the 12 V battery rail and the motor, it acts as a low-side switch driven by a logic-level gate driver; unlike a relay it is silent, contactless, and PWM-able for soft-start. Trade-off: at VIN=16 V load-dump transients the 40 V V_DS still leaves adequate headroom but a TVS clamp is recommended on the bus.
Recommended
48 V Mild-Hybrid Synchronous Rectification
The IAUCN04S7N015GATMA1 is well suited to 48 V mild-hybrid synchronous rectification stages that step 48 V down to 12 V through a buck converter. Its 1.53 mΩ R_DS(on) minimizes I²R loss at 100 A+ inductor currents, and the SSO4G source-down package lands on an IMS substrate for thermal extraction in the high-current loop. With 40 V V_DS, this part fits the 12 V low-side synchronous rectifier position where it sees at most the 12 V rail plus ringing. The low Q_G and Q_OSS reduce dead-time loss in the 100-200 kHz switching frequency range typical of 48 V converters. Trade-off: do not use it on the 48 V high-side; instead choose a 100 V OptiMOS 7 part such as IAUC60N10S5L110ATMA1.
Recommended
Industrial Brushless DC (BLDC) Motor Drive
The IAUCN04S7N015GATMA1 is ideal for industrial BLDC motor drives operating on 24 V or 48 V rails where the half-bridge switches must handle 50-100 A phase currents at 20-50 kHz PWM. Its 1.53 mΩ R_DS(on) yields high inverter efficiency, the 165 A I_D rating provides robust inrush headroom during motor start, and the SSO4G 5x6 source-down footprint simplifies IMS-based inverter PCB design common in 1-5 kW motor drives. Used as the low-side FET in each phase leg, paired with a higher-voltage OptiMOS 7 high-side part, the system achieves >97% efficiency at full load. Trade-off: at 48 V operation, verify V_DS margin against bus ringing and add a snubber if needed.
Recommended
High-Current Hot-Swap / OR-ing Controller
The IAUCN04S7N015GATMA1 suits high-current 12 V/24 V hot-swap and OR-ing controller stages where a low-R_DS(on) MOSFET in series with the rail must survive inrush transients while dissipating minimal steady-state loss. Its 1.53 mΩ R_DS(on) means a 100 A OR-ing path drops only 153 mV and dissipates 15 W - manageable on an IMS substrate with adequate copper. The 40 V V_DS covers 24 V industrial rails with margin, and the 175C junction rating handles the thermal stress of hot-plug events. Trade-off: gate-charge-driven inrush control requires an external gate-driver IC; the bare MOSFET alone will not slew-rate-limit.
Recommended
Automotive PTC Heater Switching
The IAUCN04S7N015GATMA1 fits automotive PTC heater switching at 12 V where currents of 50-80 A flow through resistive heater elements that demand low conduction loss and high reliability. Its 1.53 mΩ R_DS(on) minimizes voltage drop on the supply rail (critical for cold-crank scenarios), the 165 A continuous drain rating exceeds typical 60 A PTC currents by 2.5x, and AEC-Q101 qualification satisfies cabin-comfort electronic modules. The SSO4G package on IMS enables compact under-seat heater-driver PCBs. Trade-off: PWM dimming at low duty cycle can push high I²R into the MOSFET during the on-pulse; ensure thermal mass on the substrate is adequate.
Recommended
Server / Telecom 12 V Battery-Backup Switch
The IAUCN04S7N015GATMA1 fits server and telecom 12 V battery-backup OR-ing switches where the load must be transferred between mains supply and battery without interruption. Its 1.53 mΩ R_DS(on) keeps steady-state loss under 10 W even at 80 A, the SSO4G footprint enables compact IMS-based power-stage design, and the 40 V V_DS comfortably covers 12 V rails with load-dump margin. AEC-Q101 qualification is overkill for stationary use but the device is highly reliable. Trade-off: for 48 V datacenter bus applications, select a 100 V OptiMOS 7 part instead, since the -015 will not survive 48 V bus transients.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7N015GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7N019GATMA1 | IAUCN04S7N027GATMA1 | IAUCN04S7L050HATMA1 | ISZ230N10NM6ATMA1 | IAUC60N10S5L110ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-THSOG-4-1 (SSO4G 5x6) | PG-THSOG-4-1 (SSO4G 5x6) - same | PG-THSOG-4-1 (SSO4G 5x6) - same | PG-THSOG-4-1 (SSO4G 5x6) - same | PG-THSOG-4-1 (SSO4G 5x6) - same | PG-THSOG-4-1 (SSO4G 5x6) - same |
| Drain-Source Voltage (V_DS) | 40 V | 40 V | 40 V | 40 V | 100 V | 100 V |
| R_DS(on) max at V_GS=10 V | 1.53 mΩ | ~1.9 mΩ | ~2.7 mΩ | ~5.0 mΩ | [DATA_NEEDED] | [DATA_NEEDED] |
| Continuous Drain Current (I_D) | 165 A | 165 A | 165 A | 165 A | ~120 A | [DATA_NEEDED] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Gate Threshold Variant | Standard V_GS(th) | Standard V_GS(th) | Standard V_GS(th) | Logic-level V_GS(th) | Standard V_GS(th) | Standard V_GS(th) |
| Approx. Price (qty 1000) | $2.62 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest R_DS(on) in the IAUCN04S7 SSO4G family (vs IAUCN04S7N027GATMA1)
- Source-down SSO4G footprint for IMS thermal extraction (vs Legacy D2PAK MOSFETs)
- Standard V_GS(th) for 10 V gate drive (vs IAUCN04S7L050HATMA1)
- AEC-Q101 automotive qualification (vs Industrial-grade only MOSFETs)
Design Notes
The SSO4G (PG-THSOG-4-1) package is source-down - the exposed pad is the SOURCE terminal, not the drain. Solder the source pad directly to the IMS (Insulated Metal Substrate) or to a large copper pour with an array of thermal vias (0.3 mm drill, 1 mm pitch, filled if possible). Insufficient thermal vias will degrade R_thJC above the datasheet value and risk thermal runaway at high I_D. Keep the gate-loop trace short and narrow to minimize gate-loop inductance; ringing above 20 V V_GS can punch through the gate oxide.
Minimize the source-inductance path between the MOSFET source pad and the gate-driver ground reference. A 1 nH source inductance combined with 50 A/ns di/dt produces 50 V of negative gate-drive transient, which can re-trigger the device or destroy the gate. Place the gate-driver return via within 5 mm of the source pad. Use a 4-layer PCB with a dedicated ground plane directly under the SSO4G footprint to provide the lowest-impedance return path.
Estimated thermal dissipation: at I_D = 100 A and R_DS(on) = 1.53 mΩ, conduction loss is I²R = 15.3 W. With an SSO4G package on an IMS substrate (typical R_thJC ~0.5 C/W), the junction-to-case rise is 7.6 C, well within the 175C maximum. However at 165 A continuous, loss rises to ~42 W and junction temperature becomes the limiting factor - derate to ~120 A continuous for 100C ambient operation. Always validate thermal design with thermocouple measurements on the IMS, not just electrical derating curves.
Do not use IAUCN04S7N015GATMA1 on the high-side of a 48 V bus - the 40 V V_DS rating will be exceeded during 48 V load-dump transients, leading to avalanche failure. For 48 V applications, choose IAUC60N10S5L110ATMA1 (100 V) on the high-side and keep the -015 on the 12 V low-side position. Also avoid operating below V_GS=8 V - the R_DS(on) curve rises sharply and may exceed thermal limits at full load.
Drive the gate with a 10 V V_GS source capable of 1-2 A peak current (e.g. dedicated gate-driver IC, not a microcontroller GPIO). The total gate charge of OptiMOS 7 40 V parts at this die size is in the 50-100 nC range; a weak driver will slow switching edges, increasing switching loss and exacerbating ringing. Place a 10 Ω gate-source resistor close to the gate pin to dampen high-frequency ringing.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon datasheet. RoHS and REACH compliant. Halogen-free per Infineon product page. MSL 1 per JEDEC J-STD-020 (no dry-pack required).
