IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
MPN: IQE022N06LM5CGATMA1 ✓ فعالIQE022N06LM5CGATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor device in which the gate field modulates a conduction channel between drain and source. N-channel enhancement-mode MOSFETs like the IQE022N06LM5 are the workhorses of modern power electronics, sitting in the hierarchy: power MOSFET -> discrete semiconductor -> power switch -> power management IC. OptiMOS 5 is Infineon's fifth-generation 60V-300V power-MOSFET platform optimized for synchronous rectification and buck/boost topologies.
Key features include 2.2 mΩ typical on-resistance at V_GS=10V, fast switching with optimized gate charge (Q_G), low Q_rr body-diode reverse recovery, and a 100W power dissipation rating at the case. The PQFN 3.3x3.3 mm package with an exposed top-side cooling structure offers an exceptionally low thermal resistance path, enabling 100W dissipation with a properly designed PCB land pattern. A logic-level gate drive is not required - the standard 10V gate drive delivers full enhancement.
Architecturally, OptiMOS 5 uses Infineon's advanced trench-cell geometry that maximizes channel width per unit silicon area, shrinking R_DS(on) without raising C_iss or Q_G. This balance - low R_DS(on) together with modest gate charge - yields high efficiency in hard-switched 12V-48V buck converters and in 48V bus OR-ing circuits. The part also integrates a robust avalanche-rated body diode and is qualified for industrial temperature ranges.
Typical applications include 48V telecom and server intermediate bus converters, synchronous rectification on the secondary side of isolated DC-DC modules, OR-ing FETs in redundant N+1 power shelves, motor-control H-bridges for 24V-48V BLDC drives, and USB-PD / e-Marked cable protection. The very low R_DS(on) keeps conduction loss minimal even at high continuous currents on small PCBs.
When designing with this MOSFET, prioritize thermal copper pour under the exposed pad and minimize parasitic source-inductance in the gate-drive loop to avoid dv/dt-induced turn-on. For high-side use, verify that the bootstrap or gate-driver supply can deliver the Q_G charge at the target switching frequency without excessive ringing.
This page synthesizes distributor pricing, drop-in alternatives, and practical thermal design notes that complement the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IQE022N06LM5CGATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IQE022N06LM5CGATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Product Family, Configuration.
ISC015N06NM5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRFH5015TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQDH35N03LM5SCATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQE018N06NM6CGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQE036N08NM6CGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQE022N06LM5CGATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 5 |
| Technology | N-Channel Power MOSFET (Enhancement Mode) |
| Drain-Source Voltage (V_DS) | 60 V |
| Continuous Drain Current (I_D) at T_A=25C | 24 A |
| Continuous Drain Current (I_D) at T_C=25C | 151 A |
| R_DS(on) (typical, V_GS=10V) | 2.2 mΩ |
| Power Dissipation (T_A) | 2.5 W |
| Power Dissipation (T_C) | 100 W |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C |
| پیکیج | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پن کی تعداد | 9 (with exposed thermal pad) |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
IQE022N06LM5CGATMA1 پن کنفیگریشن
| پن 1 | GATE — Gate drive input (logic-level enhancement) |
| پن 2 | SOURCE — Source connection (low-side return) |
| پن 3 | DRAIN — Drain connection (high-current load) |
| پن 4 | NC — Not connected (per datasheet) - mechanical pin |
| پن 5 | NC — Not connected (per datasheet) - mechanical pin |
| پن 6 | NC — Not connected (per datasheet) - mechanical pin |
| پن 7 | NC — Not connected (per datasheet) - mechanical pin |
| پن 8 | NC — Not connected (per datasheet) - mechanical pin |
| پن 9 | THERMAL_PAD — Exposed pad - drain potential, provides thermal path and electrical drain connection |
محفوظ آپریٹنگ ایریا (DC, T_C=25C)
عام استعمالات
IQE022N06LM5CGATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48V Telecom Intermediate Bus Synchronous Rectifier, N+1 OR-ing FET for Redundant Power Shelves, Secondary-Side Rectifier for Isolated DC-DC Modules, 24V-48V BLDC Motor Drive H-Bridge, USB-PD Load Switch and Cable Protection, Battery Protection and Hot-Swap in 24V Energy Storage.
48V Telecom Intermediate Bus Synchronous Rectifier
The IQE022N06LM5CGATMA1 is well suited to the synchronous-rectifier slot in 48V-to-12V intermediate-bus converters used in telecom and datacom power shelves. Its 2.2 mΩ typical R_DS(on) at V_GS=10V minimizes conduction loss on the low-side, while the 60V V_DS provides headroom for the 48V bus plus ringing from leakage inductance. The PQFN 3.3x3.3 mm footprint keeps the converter footprint compact, and 24A T_A / 151A T_C ratings support up to 600W continuous throughput. Compared with a Schottky-diode rectifier, this part reduces reverse-recovery loss and enables higher switching frequency.
تجویز کردہ
N+1 OR-ing FET for Redundant Power Shelves
The IQE022N06LM5CGATMA1 serves as the OR-ing MOSFET in redundant 48V server and telecom power shelves where two or more supplies feed a common bus. Its 2.2 mΩ R_DS(on) keeps dissipation below 5W even at 50A load, so no heatsink is required, and the 60V rating handles the full 48V bus plus transient spikes from hot-swap events. The reverse body-diode conducts during switch-over, and the part's low Q_rr reduces cross-conduction losses. The PQFN 3.3x3.3 mm footprint allows placement directly behind the OR-ing controller (e.g., hot-swap or ideal-diode IC).
تجویز کردہ
Secondary-Side Rectifier for Isolated DC-DC Modules
In isolated 24V or 48V-input DC-DC bricks, the IQE022N06LM5CGATMA1 functions as the secondary-side synchronous rectifier, replacing Schottky diodes to gain 2-4% efficiency. The 60V V_DS rating supports 24V outputs with wide tolerance and short-circuit transients, and the 2.2 mΩ R_DS(on) keeps conduction loss low at full-load currents of 30-60A. The part's modest gate charge simplifies bootstrap or gate-driver design, while the PQFN 3.3x3.3 mm footprint fits compact quarter-brick and sixteenth-brick form factors common in distributed-power architectures.
تجویز کردہ
24V-48V BLDC Motor Drive H-Bridge
The IQE022N06LM5CGATMA1 forms the low-side switches in a 24V-48V three-phase BLDC motor-drive H-bridge for industrial pumps, fans, and e-bike traction. Its 2.2 mΩ R_DS(on) and 24A T_A continuous current are well matched to 10-20A continuous motor phase currents typical of mid-power drives, while the 60V V_DS easily absorbs back-EMF spikes from motor inductance during PWM switching. The PQFN 3.3x3.3 mm package enables tight H-bridge layout that minimizes parasitic loop inductance and dv/dt-induced ringing.
تجویز کردہ
USB-PD Load Switch and Cable Protection
The IQE022N06LM5CGATMA1 acts as the high-side load switch in USB-PD and Type-C cable-eMarker protection circuits, where 20V V_BUS must be switched with minimal drop. Its 2.2 mΩ R_DS(on) limits dissipation to roughly 0.88W at 20V/5A load, fitting easily in the 2.5W T_A envelope. The 60V V_DS comfortably handles 20V nominal plus surge events, and the PQFN 3.3x3.3 mm package is small enough to fit beside the Type-C connector on space-constrained boards. The low Q_rr body diode is a key benefit during hot-unplug events.
تجویز کردہ
Battery Protection and Hot-Swap in 24V Energy Storage
In 24V battery-management systems for industrial energy storage and e-mobility, the IQE022N06LM5CGATMA1 serves as the high-side disconnect and hot-swap MOSFET. The 2.2 mΩ R_DS(on) at full-gate drive keeps continuous current capability at 24A without exceeding the 2.5W T_A envelope when mounted on adequate copper. The 60V V_DS handles the 24V battery plus inductive kick from cabling during disconnect events, and the PQFN 3.3x3.3 mm footprint with exposed pad supports direct PCB cooling. Low Q_rr ensures clean switching during load-step transitions.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IQE022N06LM5CGATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | ISC015N06NM5ATMA1 | IRFH5015TRPBF | IQDH35N03LM5SCATMA1 | IQE018N06NM6CGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3) | PG-TTFN-9-3 (PQFN 3.3x3.3) - same | PG-TTFN-9-3 (PQFN 3.3x3.3) - same | PG-TTFN-9-3 (PQFN 3.3x3.3) - same | PG-TTFN-9-3 (PQFN 3.3x3.3) - same | PG-TTFN-9-3 (PQFN 3.3x3.3) - same |
| Drain-Source Voltage (V_DS) | 60 V | 60 V - same | 60 V - same | 30 V - lower | 60 V - same | 80 V - higher |
| R_DS(on) typical at V_GS=10V | 2.2 mΩ | 1.5 mΩ (-32%) | 3.0 mΩ (+36%) | 3.5 mΩ (+59%) | 1.8 mΩ (-18%) | 3.6 mΩ (+64%) |
| Continuous Drain Current (T_A=25C) | 24 A | 30 A (+25%) | 15 A (-37%) | 35 A (+46%) | 26 A (+8%) | 20 A (-17%) |
| Continuous Drain Current (T_C=25C) | 151 A | 180 A (+19%) | 100 A (-34%) | 200 A (+32%) | 160 A (+6%) | 140 A (-7%) |
| Technology Generation | OptiMOS 5 | OptiMOS 5 - same | StrongIRFET legacy | OptiMOS 5 - same | OptiMOS 6 - newer | OptiMOS 6 - newer |
| Power Dissipation (T_C) | 100 W | 100 W - same | 96 W (-4%) | 100 W - same | 100 W - same | 100 W - same |
اہم امتیازی خصوصیات
- Lowest R_DS(on) in PG-TTFN-9-3 footprint for 60V class at this generation (بمقابلہIRFH5015TRPBF)
- OptiMOS 5 trench technology provides best-in-class FOM (R_DS(on) x Q_G) (بمقابلہISC015N06NM5ATMA1)
- Higher V_DS headroom than 30V-40V alternatives in same footprint (بمقابلہBSC050N04LSGATMA1)
ڈیزائن نوٹس
The IQE022N06LM5CGATMA1 dissipates P = I^2 * R_DS(on). At 24A continuous on the PQFN 3.3x3.3 mm land pattern with 1 sq.in. of top-side copper (no bottom copper), expect theta_JA of approximately 50 C/W, so at T_A=25C the part reaches 50C rise (75C junction). For 50A continuous operation, copper pour must expand to 2-3 sq.in. plus thermal vias to inner/outer copper layers. Estimated: P = 50^2 * 0.0022 = 5.5W; junction rise = 5.5W * 50 C/W = 275C - clearly above 150C rating without aggressive cooling, so multi-layer copper stack-up or forced airflow is mandatory at 50A.
Place the gate-drive trace and the gate-source resistor directly over the part's gate pin with minimum loop area; for the PQFN 3.3x3.3 footprint, gate-drive loop inductance must stay below 2 nH to avoid gate-oscillation. Use 4 oz copper or heavier on the drain/source pads and stitch 4-8 thermal vias (0.3 mm drill, 1 mm pitch) directly under the exposed pad to inner/outer copper layers. Keep high-dv/dt drain traces at least 1 mm away from the gate pin to prevent dv/dt-induced turn-on, which is the most common failure mode for this part in half-bridge configurations.
Do not parallel IQE022N06LM5CGATMA1 parts without individual gate-source resistors (10-100 ohm) - shared gate impedance causes high-frequency oscillation. The exposed pad is electrically drain potential (not isolated), so PCB thermal vias must connect to a copper area that is safe to be at drain potential; for high-side use, this means the top-side cooling copper cannot touch the low-side copper layer. The body diode has a P-N junction that will conduct if the part is reverse-biased without an anti-parallel diode - in OR-ing and bridge applications, verify the design tolerates brief body-diode conduction.
For switching frequencies above 100 kHz, the part's input capacitance C_iss (typically 2500-3500 pF for this family) and Q_G must be sourced from the gate-driver supply each cycle - this current adds to the gate-driver's quiescent load. Per the Infineon OptiMOS 5 datasheet, the gate-drive path should use a 10-ohm gate resistor to limit ringing, and the gate-driver V_CC decoupling (1 uF X7R minimum) should be placed within 5 mm of the driver's V_CC pin to prevent gate-supply collapse at high dV/dt.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Industrial-grade part (not AEC-Q100 qualified); for automotive applications use the IAUC-prefixed variants. Halogen-free per Infineon's OptiMOS 5 family datasheet.
