IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
MPN: IQE022N06LM5CGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.08 | $540.00 |
| 1,000 | $0.92 | $920.00 |
| 5,000 | $0.78 | $3,900.00 |
IQE022N06LM5CGATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor device in which the gate field modulates a conduction channel between drain and source. N-channel enhancement-mode MOSFETs like the IQE022N06LM5 are the workhorses of modern power electronics, sitting in the hierarchy: power MOSFET -> discrete semiconductor -> power switch -> power management IC. OptiMOS 5 is Infineon's fifth-generation 60V-300V power-MOSFET platform optimized for synchronous rectification and buck/boost topologies.
Key features include 2.2 mΩ typical on-resistance at V_GS=10V, fast switching with optimized gate charge (Q_G), low Q_rr body-diode reverse recovery, and a 100W power dissipation rating at the case. The PQFN 3.3x3.3 mm package with an exposed top-side cooling structure offers an exceptionally low thermal resistance path, enabling 100W dissipation with a properly designed PCB land pattern. A logic-level gate drive is not required - the standard 10V gate drive delivers full enhancement.
Architecturally, OptiMOS 5 uses Infineon's advanced trench-cell geometry that maximizes channel width per unit silicon area, shrinking R_DS(on) without raising C_iss or Q_G. This balance - low R_DS(on) together with modest gate charge - yields high efficiency in hard-switched 12V-48V buck converters and in 48V bus OR-ing circuits. The part also integrates a robust avalanche-rated body diode and is qualified for industrial temperature ranges.
Typical applications include 48V telecom and server intermediate bus converters, synchronous rectification on the secondary side of isolated DC-DC modules, OR-ing FETs in redundant N+1 power shelves, motor-control H-bridges for 24V-48V BLDC drives, and USB-PD / e-Marked cable protection. The very low R_DS(on) keeps conduction loss minimal even at high continuous currents on small PCBs.
When designing with this MOSFET, prioritize thermal copper pour under the exposed pad and minimize parasitic source-inductance in the gate-drive loop to avoid dv/dt-induced turn-on. For high-side use, verify that the bootstrap or gate-driver supply can deliver the Q_G charge at the target switching frequency without excessive ringing.
This page synthesizes distributor pricing, drop-in alternatives, and practical thermal design notes that complement the manufacturer datasheet.
Drop-in alternatives for IQE022N06LM5CGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQE022N06LM5CGATMA1 (same form factor and footprint) — differing in Package, Technology, Operating Temperature Range, Product Family, Configuration.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
ISC015N06NM5ATMA1
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View Datasheet →IRFH5015TRPBF
✅ Drop-In✓ In Stock
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View Datasheet →IQDH35N03LM5SCATMA1
✅ Drop-In✓ In Stock
$2.05 / Unit
View Datasheet →IQE018N06NM6CGATMA1
✅ Drop-In✓ In Stock
$1.21 / Unit
View Datasheet →IQE036N08NM6CGATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IQE022N06LM5CGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 5 |
| Technology | N-Channel Power MOSFET (Enhancement Mode) |
| Drain-Source Voltage (V_DS) | 60 V |
| Continuous Drain Current (I_D) at T_A=25C | 24 A |
| Continuous Drain Current (I_D) at T_C=25C | 151 A |
| R_DS(on) (typical, V_GS=10V) | 2.2 mΩ |
| Power Dissipation (T_A) | 2.5 W |
| Power Dissipation (T_C) | 100 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) |
| Mounting Type | Surface Mount |
| Pin Count | 9 (with exposed thermal pad) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IQE022N06LM5CGATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input (logic-level enhancement) |
| Pin 2 | SOURCE — Source connection (low-side return) |
| Pin 3 | DRAIN — Drain connection (high-current load) |
| Pin 4 | NC — Not connected (per datasheet) - mechanical pin |
| Pin 5 | NC — Not connected (per datasheet) - mechanical pin |
| Pin 6 | NC — Not connected (per datasheet) - mechanical pin |
| Pin 7 | NC — Not connected (per datasheet) - mechanical pin |
| Pin 8 | NC — Not connected (per datasheet) - mechanical pin |
| Pin 9 | THERMAL_PAD — Exposed pad - drain potential, provides thermal path and electrical drain connection |
Safe Operating Area (DC, T_C=25C)
Typical Applications
IQE022N06LM5CGATMA1 is suitable for 6 applications: 48V Telecom Intermediate Bus Synchronous Rectifier, N+1 OR-ing FET for Redundant Power Shelves, Secondary-Side Rectifier for Isolated DC-DC Modules, 24V-48V BLDC Motor Drive H-Bridge, USB-PD Load Switch and Cable Protection, Battery Protection and Hot-Swap in 24V Energy Storage.
48V Telecom Intermediate Bus Synchronous Rectifier
The IQE022N06LM5CGATMA1 is well suited to the synchronous-rectifier slot in 48V-to-12V intermediate-bus converters used in telecom and datacom power shelves. Its 2.2 mΩ typical R_DS(on) at V_GS=10V minimizes conduction loss on the low-side, while the 60V V_DS provides headroom for the 48V bus plus ringing from leakage inductance. The PQFN 3.3x3.3 mm footprint keeps the converter footprint compact, and 24A T_A / 151A T_C ratings support up to 600W continuous throughput. Compared with a Schottky-diode rectifier, this part reduces reverse-recovery loss and enables higher switching frequency.
Recommended
N+1 OR-ing FET for Redundant Power Shelves
The IQE022N06LM5CGATMA1 serves as the OR-ing MOSFET in redundant 48V server and telecom power shelves where two or more supplies feed a common bus. Its 2.2 mΩ R_DS(on) keeps dissipation below 5W even at 50A load, so no heatsink is required, and the 60V rating handles the full 48V bus plus transient spikes from hot-swap events. The reverse body-diode conducts during switch-over, and the part's low Q_rr reduces cross-conduction losses. The PQFN 3.3x3.3 mm footprint allows placement directly behind the OR-ing controller (e.g., hot-swap or ideal-diode IC).
Recommended
Secondary-Side Rectifier for Isolated DC-DC Modules
In isolated 24V or 48V-input DC-DC bricks, the IQE022N06LM5CGATMA1 functions as the secondary-side synchronous rectifier, replacing Schottky diodes to gain 2-4% efficiency. The 60V V_DS rating supports 24V outputs with wide tolerance and short-circuit transients, and the 2.2 mΩ R_DS(on) keeps conduction loss low at full-load currents of 30-60A. The part's modest gate charge simplifies bootstrap or gate-driver design, while the PQFN 3.3x3.3 mm footprint fits compact quarter-brick and sixteenth-brick form factors common in distributed-power architectures.
Recommended
24V-48V BLDC Motor Drive H-Bridge
The IQE022N06LM5CGATMA1 forms the low-side switches in a 24V-48V three-phase BLDC motor-drive H-bridge for industrial pumps, fans, and e-bike traction. Its 2.2 mΩ R_DS(on) and 24A T_A continuous current are well matched to 10-20A continuous motor phase currents typical of mid-power drives, while the 60V V_DS easily absorbs back-EMF spikes from motor inductance during PWM switching. The PQFN 3.3x3.3 mm package enables tight H-bridge layout that minimizes parasitic loop inductance and dv/dt-induced ringing.
Recommended
USB-PD Load Switch and Cable Protection
The IQE022N06LM5CGATMA1 acts as the high-side load switch in USB-PD and Type-C cable-eMarker protection circuits, where 20V V_BUS must be switched with minimal drop. Its 2.2 mΩ R_DS(on) limits dissipation to roughly 0.88W at 20V/5A load, fitting easily in the 2.5W T_A envelope. The 60V V_DS comfortably handles 20V nominal plus surge events, and the PQFN 3.3x3.3 mm package is small enough to fit beside the Type-C connector on space-constrained boards. The low Q_rr body diode is a key benefit during hot-unplug events.
Recommended
Battery Protection and Hot-Swap in 24V Energy Storage
In 24V battery-management systems for industrial energy storage and e-mobility, the IQE022N06LM5CGATMA1 serves as the high-side disconnect and hot-swap MOSFET. The 2.2 mΩ R_DS(on) at full-gate drive keeps continuous current capability at 24A without exceeding the 2.5W T_A envelope when mounted on adequate copper. The 60V V_DS handles the 24V battery plus inductive kick from cabling during disconnect events, and the PQFN 3.3x3.3 mm footprint with exposed pad supports direct PCB cooling. Low Q_rr ensures clean switching during load-step transitions.
Recommended
Recommended Products Summary
Engineering reference data for IQE022N06LM5CGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC015N06NM5ATMA1 | IRFH5015TRPBF | IQDH35N03LM5SCATMA1 | IQE018N06NM6CGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3) | PG-TTFN-9-3 (PQFN 3.3x3.3) - same | PG-TTFN-9-3 (PQFN 3.3x3.3) - same | PG-TTFN-9-3 (PQFN 3.3x3.3) - same | PG-TTFN-9-3 (PQFN 3.3x3.3) - same | PG-TTFN-9-3 (PQFN 3.3x3.3) - same |
| Drain-Source Voltage (V_DS) | 60 V | 60 V - same | 60 V - same | 30 V - lower | 60 V - same | 80 V - higher |
| R_DS(on) typical at V_GS=10V | 2.2 mΩ | 1.5 mΩ (-32%) | 3.0 mΩ (+36%) | 3.5 mΩ (+59%) | 1.8 mΩ (-18%) | 3.6 mΩ (+64%) |
| Continuous Drain Current (T_A=25C) | 24 A | 30 A (+25%) | 15 A (-37%) | 35 A (+46%) | 26 A (+8%) | 20 A (-17%) |
| Continuous Drain Current (T_C=25C) | 151 A | 180 A (+19%) | 100 A (-34%) | 200 A (+32%) | 160 A (+6%) | 140 A (-7%) |
| Technology Generation | OptiMOS 5 | OptiMOS 5 - same | StrongIRFET legacy | OptiMOS 5 - same | OptiMOS 6 - newer | OptiMOS 6 - newer |
| Power Dissipation (T_C) | 100 W | 100 W - same | 96 W (-4%) | 100 W - same | 100 W - same | 100 W - same |
Key Differentiators
- Lowest R_DS(on) in PG-TTFN-9-3 footprint for 60V class at this generation (vs IRFH5015TRPBF)
- OptiMOS 5 trench technology provides best-in-class FOM (R_DS(on) x Q_G) (vs ISC015N06NM5ATMA1)
- Higher V_DS headroom than 30V-40V alternatives in same footprint (vs BSC050N04LSGATMA1)
Design Notes
The IQE022N06LM5CGATMA1 dissipates P = I^2 * R_DS(on). At 24A continuous on the PQFN 3.3x3.3 mm land pattern with 1 sq.in. of top-side copper (no bottom copper), expect theta_JA of approximately 50 C/W, so at T_A=25C the part reaches 50C rise (75C junction). For 50A continuous operation, copper pour must expand to 2-3 sq.in. plus thermal vias to inner/outer copper layers. Estimated: P = 50^2 * 0.0022 = 5.5W; junction rise = 5.5W * 50 C/W = 275C - clearly above 150C rating without aggressive cooling, so multi-layer copper stack-up or forced airflow is mandatory at 50A.
Place the gate-drive trace and the gate-source resistor directly over the part's gate pin with minimum loop area; for the PQFN 3.3x3.3 footprint, gate-drive loop inductance must stay below 2 nH to avoid gate-oscillation. Use 4 oz copper or heavier on the drain/source pads and stitch 4-8 thermal vias (0.3 mm drill, 1 mm pitch) directly under the exposed pad to inner/outer copper layers. Keep high-dv/dt drain traces at least 1 mm away from the gate pin to prevent dv/dt-induced turn-on, which is the most common failure mode for this part in half-bridge configurations.
Do not parallel IQE022N06LM5CGATMA1 parts without individual gate-source resistors (10-100 ohm) - shared gate impedance causes high-frequency oscillation. The exposed pad is electrically drain potential (not isolated), so PCB thermal vias must connect to a copper area that is safe to be at drain potential; for high-side use, this means the top-side cooling copper cannot touch the low-side copper layer. The body diode has a P-N junction that will conduct if the part is reverse-biased without an anti-parallel diode - in OR-ing and bridge applications, verify the design tolerates brief body-diode conduction.
For switching frequencies above 100 kHz, the part's input capacitance C_iss (typically 2500-3500 pF for this family) and Q_G must be sourced from the gate-driver supply each cycle - this current adds to the gate-driver's quiescent load. Per the Infineon OptiMOS 5 datasheet, the gate-drive path should use a 10-ohm gate resistor to limit ringing, and the gate-driver V_CC decoupling (1 uF X7R minimum) should be placed within 5 mm of the driver's V_CC pin to prevent gate-supply collapse at high dV/dt.
Compliance Information
RoHS and REACH compliant per Infineon product page. Industrial-grade part (not AEC-Q100 qualified); for automotive applications use the IAUC-prefixed variants. Halogen-free per Infineon's OptiMOS 5 family datasheet.
