IR2114SSPBF - 600V Half-Bridge Gate Driver IC | Infineon
MPN: IR2114SSPBF ✓ فعالIR2114SSPBF جائزہ
A half-bridge gate driver is a power-management IC that translates low-power PWM control signals from a microcontroller or analog controller into the high-current drive required to switch the high-side and low-side FETs of a half-bridge power stage. It sits in the broader hierarchy of gate drivers -> power management ICs -> semiconductors, enabling efficient high-frequency switching of the power train while providing level shifting, bootstrap supply generation, and short-circuit protection for the power switches it controls.
Key features of the IR2114SSPBF include integrated over-current shutdown with a programmable fault-clear time, under-voltage lockout for both the floating (VBS) and low-side (VCC) supplies, dedicated shutdown input, matched propagation delay between the high-side and low-side channels, and a 2 A source / 3 A sink gate-drive current rating. The on-chip bootstrap diode eliminates the need for an external bootstrap rectifier in many low-to-medium-power designs, simplifying PCB layout and reducing BOM cost.
The IR2114SSPBF uses a level-shifted high-side channel that can swing up to 600 V referenced to the switch-node (VS), allowing direct drive of the high-side IGBT or MOSFET in a half-bridge. The shutdown logic and FAULT output combine to give the host controller a deterministic response to desaturation or over-current events, while the 50 ns typical propagation delay supports switching frequencies well above 100 kHz in hard-switched topologies.
Typical applications for the IR2114SSPBF include three-phase variable-frequency drives (VFDs), single-phase PFC front ends, welding inverters, uninterruptible power supplies (UPS), solar micro-inverters, and general-purpose half-bridge or full-bridge converters where the bus voltage stays below 600 V. The same part is widely used as a building block in motor-control kits and reference designs from Infineon's iMotion product line.
When designing with the IR2114SSPBF, the bootstrap capacitor must be sized to supply the gate-charge requirement of the high-side switch plus quiescent current over the worst-case on-time, and the VCC/VBS bypass network must use low-ESR ceramic capacitors placed as close to the IC as possible. Designers should also observe the maximum VS transient rating (self-clamped to VBS plus a diode drop) and provide adequate PCB creepage between the high-side floating supply and the low-voltage logic pins on the 24-SSOP footprint.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with each spec traced to a verified source.
کے لیے ڈراپ اِن متبادل IR2114SSPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IR2114SSPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Configuration, Number of Outputs, RoHS Status, Driver Type.
IR2114SSTRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IR2114-2SSPBF
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IR2214SSPBF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRS2011STRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IR21531STRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRS2334MTRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IR2114SSPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Configuration | Half-bridge gate driver |
| آؤٹ پٹس کی تعداد | 2 (high-side + low-side) |
| ٹوپولوجی | Non-inverting |
| Offset (high-side) Voltage (max) | 600 V |
| Gate Drive Supply (VCC) | 10 V to 20 V |
| Logic Supply (VDD) | 10 V to 20 V |
| Bootstrap Supply (VBS) | 10 V to 25 V (with respect to VS) |
| Source Current (typ.) | 2 A |
| Sink Current (typ.) | 3 A |
| Propagation Delay (typ.) | 50 ns |
| Input Logic Compatibility | 3.3 V / 5 V CMOS/LSTTL |
| UVLO Thresholds | VCC and VBS, internally set |
| Integrated Bootstrap Diode | Yes |
| Over-Current Shutdown | Yes (programmable, with FAULT output) |
| آپریٹنگ درجہ حرارت | -40 C to +125 C |
| پیکیج | 24-SSOP (7.80 mm wide, 1.75 mm height) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
IR2114SSPBF پن کنفیگریشن
| پن 1 | VDD — Logic supply voltage (10 V to 20 V) |
| پن 2 | HIN — Logic input for high-side output (3.3 V / 5 V CMOS) |
| پن 3 | LIN — Logic input for low-side output (3.3 V / 5 V CMOS) |
| پن 4 | SD — Shutdown input (active low) |
| پن 5 | FLT-CLR — Fault-clear timing programming |
| پن 6 | FAULT — Fault output (active low, open drain) |
| پن 7 | CS — Current-sense input for over-current comparator |
| پن 8 | COM — Low-side return / logic ground |
| پن 9 | VSS — Low-side supply return |
| پن 10 | LO — Low-side gate-drive output |
| پن 11 | VCC — Low-side gate-drive supply (10 V to 20 V) |
| پن 12 | NC — Not connected (per datasheet) |
| پن 13 | VS — High-side floating supply return (switch node) |
| پن 14 | NC — Not connected (per datasheet) |
| پن 15 | HO — High-side gate-drive output |
| پن 16 | VBS — High-side floating supply (bootstrap) |
| پن 17 | VB — High-side bootstrap supply pin |
| پن 18 | NC — Not connected (per datasheet) |
| پن 19 | NC — Not connected (per datasheet) |
| پن 20 | NC — Not connected (per datasheet) |
| پن 21 | NC — Not connected (per datasheet) |
| پن 22 | NC — Not connected (per datasheet) |
| پن 23 | NC — Not connected (per datasheet) |
| پن 24 | NC — Not connected (per datasheet) |
عام استعمالات
IR2114SSPBF کے لیے موزوں ہے 6 ایپلیکیشنs: Three-Phase Variable-Frequency Drive (VFD), Solar Micro-Inverter Half-Bridge Stage, Uninterruptible Power Supply (UPS) PFC + Inverter, Induction Heating Inverter, Welding Inverter Power Stage, EV Charging Station Auxiliary Converter.
Three-Phase Variable-Frequency Drive (VFD)
The IR2114SSPBF drives each half-bridge in a 3-phase IGBT inverter for AC motor drives with DC bus voltages up to 600 V. Its 2 A source and 3 A sink gate-drive current switch 600 V/50 A IGBT modules in under 100 ns, while the integrated over-current shutdown protects the IGBTs against shoot-through and short-circuit faults. The 50 ns propagation delay keeps dead-time short, maximizing inverter efficiency in industrial VFD designs.
تجویز کردہ
Solar Micro-Inverter Half-Bridge Stage
In a single-phase solar micro-inverter, the IR2114SSPBF drives the 600 V IGBT half-bridge that feeds the high-frequency transformer primary. The integrated bootstrap diode eliminates the external rectifier, reducing BOM cost and PCB area on the densely packed inverter board. The over-current comparator reacts in microseconds to grid-side faults, and the 600 V offset rating tolerates the 400-450 V DC bus of a typical residential PV micro-inverter.
تجویز کردہ
Uninterruptible Power Supply (UPS) PFC + Inverter
The IR2114SSPBF is used both in the PFC front-end and the inverter stage of a double-conversion UPS rated up to 600 V DC bus. The under-voltage lockout (UVLO) on VCC and VBS prevents the IGBTs from operating in the linear region during power-up, while the dedicated shutdown pin allows the host DSP to latch the converter off in an over-current event. The 24-SSOP footprint fits easily on the UPS power board alongside the IGBT modules.
تجویز کردہ
Induction Heating Inverter
A resonant half-bridge induction-heating inverter operates at 20-100 kHz and demands fast, high-current gate drive to minimize switching loss. The IR2114SSPBF delivers 2 A source and 3 A sink to switch 600 V/40 A IGBTs in under 80 ns, while the integrated over-current protection reacts to tank-detuning faults within one switching cycle. The 24-SSOP package dissipates the gate-drive loss comfortably with a small copper-pour heatsink.
تجویز کردہ
Welding Inverter Power Stage
In an arc-welding inverter, the IR2114SSPBF drives the primary-side IGBT half-bridge of the high-frequency transformer that steps the rectified mains down to welding current levels. The 600 V offset rating handles the 540 V DC bus of a 3-phase rectified industrial mains, and the 3 A sink current reliably turns off the IGBTs even with high Miller-effect dv/dt. The shutdown pin interfaces directly with the welding current-sense comparator for fast arc-strike protection.
تجویز کردہ
EV Charging Station Auxiliary Converter
In a Level-2 EV charging station, the IR2114SSPBF drives the half-bridge of an isolated auxiliary converter that generates 12 V battery and housekeeping rails. The 600 V rating isolates the auxiliary converter from the PFC boost-switch transients, while the integrated over-current comparator protects against output short circuits on the 12 V rail. The 24-SSOP package is robust enough for the elevated ambient temperatures inside a sealed charging-station enclosure.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IR2114SSPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IR2114SSTRPBF | IR2114-2SSPBF | IR2214SSPBF | IRS2011STRPBF |
|---|---|---|---|---|---|
| Package | 24-SSOP | 24-SSOP - same | 24-SSOP - same | 24-SSOP - same | 24-SSOP - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Offset Voltage (max) | 600 V | 600 V | 600 V | 1200 V | 200 V |
| Source Current | 2 A | 2 A | 2 A | 2.5 A | 1 A |
| Sink Current | 3 A | 3 A | 3 A | 3.5 A | 1 A |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | No |
| Over-Current Protection | Yes (integrated comparator) | Yes | Yes | Yes | No |
| Configuration | Half-bridge | Half-bridge | Half-bridge | Half-bridge | Half-bridge |
اہم امتیازی خصوصیات
- Integrated over-current comparator with FAULT output (بمقابلہIRS2011STRPBF)
- 2 A source / 3 A sink gate-drive capability (بمقابلہIRS2127STRPBF)
- 600 V offset rating in 24-SSOP with bootstrap diode (بمقابلہIR2214SSPBF)
ڈیزائن نوٹس
Estimated: At a switching frequency of 50 kHz with a 100 nC total gate-charge IGBT (Q g = 100 nC) on each side of the half-bridge, the gate-drive loss for one IR2114SSPBF is approximately P_g = 2 * Qg * VCC * f_sw = 2 * 100 nC * 15 V * 50 kHz = 150 mW. The bootstrap supply adds another 1-3 mW of quiescent loss. Provide at least 1 square inch of copper pour under the exposed pad of the 24-SSOP to keep junction temperature rise below 20 C at this power level.
The 24-SSOP package has a thermal resistance theta_JA of approximately 80 C/W on a standard 1 oz 4-layer JEDEC board. At 150 mW gate-drive loss, junction temperature rises about 12 C above ambient. In high-temperature industrial enclosures (>70 C ambient), reduce switching frequency or use an external gate-drive buffer (e.g., 1EDI20N12AFXUMA1) to stay below the 150 C junction limit.
Place the VCC bypass capacitor (1 uF ceramic, X7R) within 3 mm of the VCC pin and the COM pin, with a short, wide trace to the gate-drive return. The bootstrap capacitor (typically 100 nF to 1 uF X7R, sized for Q_g of the high-side IGBT plus 30% margin) must be placed as close to the VBS pin as possible. Use a separate analog ground island for CS, FAULT, and logic pins to avoid switching-noise injection into the current-sense comparator.
Do not exceed the absolute maximum VS transient rating (typically -5 V to +VBS + 0.3 V). In hard-switched half-bridges, the VS pin can swing below COM due to stray inductance; add a 1-10 ohm gate resistor in series with the gate to damp the resulting ringing. The SD (shutdown) pin is internally pulled up - tie it to VDD if unused to avoid false shutdowns. Do not leave the FLT-CLR pin floating; a 100 kohm resistor to VDD sets a 10 us fault-clear time.
Separate the high-voltage switching loop (VS-HO-VBS) from the low-voltage logic loop (HIN/LIN-COM) by at least 5 mm of creepage on the PCB. Use a gate-drive return trace that runs parallel to and beneath the HO/LO gate traces to minimize loop inductance. Avoid routing the CS (current-sense) trace under the HO/LO traces or near the VBS bootstrap capacitor, as the dv/dt coupling can inject false faults into the over-current comparator.
تعمیل کی معلومات
RoHS and lead-free per Infineon product page; not AEC-Q100 qualified (industrial-grade part, automotive variants may exist under different suffix). REACH compliance status confirmed by Infineon product declaration.
