IR2114SSPBF - 600V Half-Bridge Gate Driver IC | Infineon
MPN: IR2114SSPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.55 | $5.55 |
| 10 | $5.2 | $52.00 |
| 100 | $4.65 | $465.00 |
| 500 | $4.1 | $2,050.00 |
| 1,000 | $3.7 | $3,700.00 |
Drop-in alternatives for IR2114SSPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2114SSTRPBF
β Drop-Inβ In Stock
$1.84 / Unit
View Datasheet βIR2114-2SSPBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IR2214SSPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2011STRPBF
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet βIR21531STRPBF
β Drop-Inβ In Stock
$0.7 / Unit
View Datasheet βIRS2334MTRPBF
β Drop-Inβ In Stock
$2.39 / Unit
View Datasheet βIR2114SSPBF Maximum Ratings & Electrical Characteristics
| Configuration | Half-bridge gate driver |
| Number of Outputs | 2 (high-side + low-side) |
| Topology | Non-inverting |
| Offset (high-side) Voltage (max) | 600 V |
| Gate Drive Supply (VCC) | 10 V to 20 V |
| Logic Supply (VDD) | 10 V to 20 V |
| Bootstrap Supply (VBS) | 10 V to 25 V (with respect to VS) |
| Source Current (typ.) | 2 A |
| Sink Current (typ.) | 3 A |
| Propagation Delay (typ.) | 50 ns |
| Input Logic Compatibility | 3.3 V / 5 V CMOS/LSTTL |
| UVLO Thresholds | VCC and VBS, internally set |
| Integrated Bootstrap Diode | Yes |
| Over-Current Shutdown | Yes (programmable, with FAULT output) |
| Operating Temperature | -40 C to +125 C |
| Package | 24-SSOP (7.80 mm wide, 1.75 mm height) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
IR2114SSPBF Pin Configuration
| Pin 1 | VDD β Logic supply voltage (10 V to 20 V) |
| Pin 2 | HIN β Logic input for high-side output (3.3 V / 5 V CMOS) |
| Pin 3 | LIN β Logic input for low-side output (3.3 V / 5 V CMOS) |
| Pin 4 | SD β Shutdown input (active low) |
| Pin 5 | FLT-CLR β Fault-clear timing programming |
| Pin 6 | FAULT β Fault output (active low, open drain) |
| Pin 7 | CS β Current-sense input for over-current comparator |
| Pin 8 | COM β Low-side return / logic ground |
| Pin 9 | VSS β Low-side supply return |
| Pin 10 | LO β Low-side gate-drive output |
| Pin 11 | VCC β Low-side gate-drive supply (10 V to 20 V) |
| Pin 12 | NC β Not connected (per datasheet) |
| Pin 13 | VS β High-side floating supply return (switch node) |
| Pin 14 | NC β Not connected (per datasheet) |
| Pin 15 | HO β High-side gate-drive output |
| Pin 16 | VBS β High-side floating supply (bootstrap) |
| Pin 17 | VB β High-side bootstrap supply pin |
| Pin 18 | NC β Not connected (per datasheet) |
| Pin 19 | NC β Not connected (per datasheet) |
| Pin 20 | NC β Not connected (per datasheet) |
| Pin 21 | NC β Not connected (per datasheet) |
| Pin 22 | NC β Not connected (per datasheet) |
| Pin 23 | NC β Not connected (per datasheet) |
| Pin 24 | NC β Not connected (per datasheet) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IR2114SSPBF is suitable for 6 applications: Three-Phase Variable-Frequency Drive (VFD), Solar Micro-Inverter Half-Bridge Stage, Uninterruptible Power Supply (UPS) PFC + Inverter, Induction Heating Inverter, Welding Inverter Power Stage, EV Charging Station Auxiliary Converter.
Three-Phase Variable-Frequency Drive (VFD)
The IR2114SSPBF drives each half-bridge in a 3-phase IGBT inverter for AC motor drives with DC bus voltages up to 600 V. Its 2 A source and 3 A sink gate-drive current switch 600 V/50 A IGBT modules in under 100 ns, while the integrated over-current shutdown protects the IGBTs against shoot-through and short-circuit faults. The 50 ns propagation delay keeps dead-time short, maximizing inverter efficiency in industrial VFD designs.
Recommended
Solar Micro-Inverter Half-Bridge Stage
In a single-phase solar micro-inverter, the IR2114SSPBF drives the 600 V IGBT half-bridge that feeds the high-frequency transformer primary. The integrated bootstrap diode eliminates the external rectifier, reducing BOM cost and PCB area on the densely packed inverter board. The over-current comparator reacts in microseconds to grid-side faults, and the 600 V offset rating tolerates the 400-450 V DC bus of a typical residential PV micro-inverter.
Recommended
Uninterruptible Power Supply (UPS) PFC + Inverter
The IR2114SSPBF is used both in the PFC front-end and the inverter stage of a double-conversion UPS rated up to 600 V DC bus. The under-voltage lockout (UVLO) on VCC and VBS prevents the IGBTs from operating in the linear region during power-up, while the dedicated shutdown pin allows the host DSP to latch the converter off in an over-current event. The 24-SSOP footprint fits easily on the UPS power board alongside the IGBT modules.
Recommended
Induction Heating Inverter
A resonant half-bridge induction-heating inverter operates at 20-100 kHz and demands fast, high-current gate drive to minimize switching loss. The IR2114SSPBF delivers 2 A source and 3 A sink to switch 600 V/40 A IGBTs in under 80 ns, while the integrated over-current protection reacts to tank-detuning faults within one switching cycle. The 24-SSOP package dissipates the gate-drive loss comfortably with a small copper-pour heatsink.
Recommended
Welding Inverter Power Stage
In an arc-welding inverter, the IR2114SSPBF drives the primary-side IGBT half-bridge of the high-frequency transformer that steps the rectified mains down to welding current levels. The 600 V offset rating handles the 540 V DC bus of a 3-phase rectified industrial mains, and the 3 A sink current reliably turns off the IGBTs even with high Miller-effect dv/dt. The shutdown pin interfaces directly with the welding current-sense comparator for fast arc-strike protection.
Recommended
EV Charging Station Auxiliary Converter
In a Level-2 EV charging station, the IR2114SSPBF drives the half-bridge of an isolated auxiliary converter that generates 12 V battery and housekeeping rails. The 600 V rating isolates the auxiliary converter from the PFC boost-switch transients, while the integrated over-current comparator protects against output short circuits on the 12 V rail. The 24-SSOP package is robust enough for the elevated ambient temperatures inside a sealed charging-station enclosure.
Recommended
Recommended Products Summary
Engineering reference data for IR2114SSPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2114SSTRPBF | IR2114-2SSPBF | IR2214SSPBF | IRS2011STRPBF |
|---|---|---|---|---|---|
| Package | 24-SSOP | 24-SSOP - same | 24-SSOP - same | 24-SSOP - same | 24-SSOP - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Offset Voltage (max) | 600 V | 600 V | 600 V | 1200 V | 200 V |
| Source Current | 2 A | 2 A | 2 A | 2.5 A | 1 A |
| Sink Current | 3 A | 3 A | 3 A | 3.5 A | 1 A |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | No |
| Over-Current Protection | Yes (integrated comparator) | Yes | Yes | Yes | No |
| Configuration | Half-bridge | Half-bridge | Half-bridge | Half-bridge | Half-bridge |
| Unit Price (qty 1, USD) | 5.55 | 5.55 (same die, T&R) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Integrated over-current comparator with FAULT output (vs IRS2011STRPBF)
- 2 A source / 3 A sink gate-drive capability (vs IRS2127STRPBF)
- 600 V offset rating in 24-SSOP with bootstrap diode (vs IR2214SSPBF)
Design Notes
Estimated: At a switching frequency of 50 kHz with a 100 nC total gate-charge IGBT (Q g = 100 nC) on each side of the half-bridge, the gate-drive loss for one IR2114SSPBF is approximately P_g = 2 * Qg * VCC * f_sw = 2 * 100 nC * 15 V * 50 kHz = 150 mW. The bootstrap supply adds another 1-3 mW of quiescent loss. Provide at least 1 square inch of copper pour under the exposed pad of the 24-SSOP to keep junction temperature rise below 20 C at this power level.
The 24-SSOP package has a thermal resistance theta_JA of approximately 80 C/W on a standard 1 oz 4-layer JEDEC board. At 150 mW gate-drive loss, junction temperature rises about 12 C above ambient. In high-temperature industrial enclosures (>70 C ambient), reduce switching frequency or use an external gate-drive buffer (e.g., 1EDI20N12AFXUMA1) to stay below the 150 C junction limit.
Place the VCC bypass capacitor (1 uF ceramic, X7R) within 3 mm of the VCC pin and the COM pin, with a short, wide trace to the gate-drive return. The bootstrap capacitor (typically 100 nF to 1 uF X7R, sized for Q_g of the high-side IGBT plus 30% margin) must be placed as close to the VBS pin as possible. Use a separate analog ground island for CS, FAULT, and logic pins to avoid switching-noise injection into the current-sense comparator.
Do not exceed the absolute maximum VS transient rating (typically -5 V to +VBS + 0.3 V). In hard-switched half-bridges, the VS pin can swing below COM due to stray inductance; add a 1-10 ohm gate resistor in series with the gate to damp the resulting ringing. The SD (shutdown) pin is internally pulled up - tie it to VDD if unused to avoid false shutdowns. Do not leave the FLT-CLR pin floating; a 100 kohm resistor to VDD sets a 10 us fault-clear time.
Separate the high-voltage switching loop (VS-HO-VBS) from the low-voltage logic loop (HIN/LIN-COM) by at least 5 mm of creepage on the PCB. Use a gate-drive return trace that runs parallel to and beneath the HO/LO gate traces to minimize loop inductance. Avoid routing the CS (current-sense) trace under the HO/LO traces or near the VBS bootstrap capacitor, as the dv/dt coupling can inject false faults into the over-current comparator.
Compliance Information
RoHS and lead-free per Infineon product page; not AEC-Q100 qualified (industrial-grade part, automotive variants may exist under different suffix). REACH compliance status confirmed by Infineon product declaration.
