IR2114SSPBF - 600V Half-Bridge Gate Driver IC | Infineon
부품 번호: IR2114SSPBF ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $5.55 | $5.55 |
| 10 | $5.2 | $52.00 |
| 100 | $4.65 | $465.00 |
| 500 | $4.1 | $2,050.00 |
| 1,000 | $3.7 | $3,700.00 |
IR2114SSPBF 개요
A half-bridge gate driver is a power-management IC that translates low-power PWM control signals from a microcontroller or analog controller into the high-current drive required to switch the high-side and low-side FETs of a half-bridge power stage. It sits in the broader hierarchy of gate drivers -> power management ICs -> semiconductors, enabling efficient high-frequency switching of the power train while providing level shifting, bootstrap supply generation, and short-circuit protection for the power switches it controls.
Key features of the IR2114SSPBF include integrated over-current shutdown with a programmable fault-clear time, under-voltage lockout for both the floating (VBS) and low-side (VCC) supplies, dedicated shutdown input, matched propagation delay between the high-side and low-side channels, and a 2 A source / 3 A sink gate-drive current rating. The on-chip bootstrap diode eliminates the need for an external bootstrap rectifier in many low-to-medium-power designs, simplifying PCB layout and reducing BOM cost.
The IR2114SSPBF uses a level-shifted high-side channel that can swing up to 600 V referenced to the switch-node (VS), allowing direct drive of the high-side IGBT or MOSFET in a half-bridge. The shutdown logic and FAULT output combine to give the host controller a deterministic response to desaturation or over-current events, while the 50 ns typical propagation delay supports switching frequencies well above 100 kHz in hard-switched topologies.
Typical applications for the IR2114SSPBF include three-phase variable-frequency drives (VFDs), single-phase PFC front ends, welding inverters, uninterruptible power supplies (UPS), solar micro-inverters, and general-purpose half-bridge or full-bridge converters where the bus voltage stays below 600 V. The same part is widely used as a building block in motor-control kits and reference designs from Infineon's iMotion product line.
When designing with the IR2114SSPBF, the bootstrap capacitor must be sized to supply the gate-charge requirement of the high-side switch plus quiescent current over the worst-case on-time, and the VCC/VBS bypass network must use low-ESR ceramic capacitors placed as close to the IC as possible. Designers should also observe the maximum VS transient rating (self-clamped to VBS plus a diode drop) and provide adequate PCB creepage between the high-side floating supply and the low-voltage logic pins on the 24-SSOP footprint.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, with each spec traced to a verified source.
드롭인 대체품: IR2114SSPBF — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IR2114SSPBF (동일 폼 팩터 및 풋프린트) — 차이점: Package, Configuration, Number of Outputs, RoHS Status, Driver Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IR2114SSTRPBF
✅ 드롭인✓ 재고 있음
$1.84 / 개
데이터시트 보기 →IR2114-2SSPBF
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IR2214SSPBF
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRS2011STRPBF
✅ 드롭인✓ 재고 있음
$1.55 / 개
데이터시트 보기 →IR21531STRPBF
✅ 드롭인✓ 재고 있음
$0.7 / 개
데이터시트 보기 →IRS2334MTRPBF
✅ 드롭인✓ 재고 있음
$2.39 / 개
데이터시트 보기 →IR2114SSPBF 최대 정격 & 전기적 특성
| Configuration | Half-bridge gate driver |
| 출력 수 | 2 (high-side + low-side) |
| 토폴로지 | Non-inverting |
| Offset (high-side) Voltage (max) | 600 V |
| Gate Drive Supply (VCC) | 10 V to 20 V |
| Logic Supply (VDD) | 10 V to 20 V |
| Bootstrap Supply (VBS) | 10 V to 25 V (with respect to VS) |
| Source Current (typ.) | 2 A |
| Sink Current (typ.) | 3 A |
| Propagation Delay (typ.) | 50 ns |
| Input Logic Compatibility | 3.3 V / 5 V CMOS/LSTTL |
| UVLO Thresholds | VCC and VBS, internally set |
| Integrated Bootstrap Diode | Yes |
| Over-Current Shutdown | Yes (programmable, with FAULT output) |
| 동작 온도 | -40 C to +125 C |
| 패키지 | 24-SSOP (7.80 mm wide, 1.75 mm height) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
IR2114SSPBF 핀 구성
| 핀 1 | VDD — Logic supply voltage (10 V to 20 V) |
| 핀 2 | HIN — Logic input for high-side output (3.3 V / 5 V CMOS) |
| 핀 3 | LIN — Logic input for low-side output (3.3 V / 5 V CMOS) |
| 핀 4 | SD — Shutdown input (active low) |
| 핀 5 | FLT-CLR — Fault-clear timing programming |
| 핀 6 | FAULT — Fault output (active low, open drain) |
| 핀 7 | CS — Current-sense input for over-current comparator |
| 핀 8 | COM — Low-side return / logic ground |
| 핀 9 | VSS — Low-side supply return |
| 핀 10 | LO — Low-side gate-drive output |
| 핀 11 | VCC — Low-side gate-drive supply (10 V to 20 V) |
| 핀 12 | NC — Not connected (per datasheet) |
| 핀 13 | VS — High-side floating supply return (switch node) |
| 핀 14 | NC — Not connected (per datasheet) |
| 핀 15 | HO — High-side gate-drive output |
| 핀 16 | VBS — High-side floating supply (bootstrap) |
| 핀 17 | VB — High-side bootstrap supply pin |
| 핀 18 | NC — Not connected (per datasheet) |
| 핀 19 | NC — Not connected (per datasheet) |
| 핀 20 | NC — Not connected (per datasheet) |
| 핀 21 | NC — Not connected (per datasheet) |
| 핀 22 | NC — Not connected (per datasheet) |
| 핀 23 | NC — Not connected (per datasheet) |
| 핀 24 | NC — Not connected (per datasheet) |
일반적인 애플리케이션
IR2114SSPBF 적합 용도: 6 애플리케이션s: Three-Phase Variable-Frequency Drive (VFD), Solar Micro-Inverter Half-Bridge Stage, Uninterruptible Power Supply (UPS) PFC + Inverter, Induction Heating Inverter, Welding Inverter Power Stage, EV Charging Station Auxiliary Converter.
Three-Phase Variable-Frequency Drive (VFD)
The IR2114SSPBF drives each half-bridge in a 3-phase IGBT inverter for AC motor drives with DC bus voltages up to 600 V. Its 2 A source and 3 A sink gate-drive current switch 600 V/50 A IGBT modules in under 100 ns, while the integrated over-current shutdown protects the IGBTs against shoot-through and short-circuit faults. The 50 ns propagation delay keeps dead-time short, maximizing inverter efficiency in industrial VFD designs.
추천
Solar Micro-Inverter Half-Bridge Stage
In a single-phase solar micro-inverter, the IR2114SSPBF drives the 600 V IGBT half-bridge that feeds the high-frequency transformer primary. The integrated bootstrap diode eliminates the external rectifier, reducing BOM cost and PCB area on the densely packed inverter board. The over-current comparator reacts in microseconds to grid-side faults, and the 600 V offset rating tolerates the 400-450 V DC bus of a typical residential PV micro-inverter.
추천
Uninterruptible Power Supply (UPS) PFC + Inverter
The IR2114SSPBF is used both in the PFC front-end and the inverter stage of a double-conversion UPS rated up to 600 V DC bus. The under-voltage lockout (UVLO) on VCC and VBS prevents the IGBTs from operating in the linear region during power-up, while the dedicated shutdown pin allows the host DSP to latch the converter off in an over-current event. The 24-SSOP footprint fits easily on the UPS power board alongside the IGBT modules.
추천
Induction Heating Inverter
A resonant half-bridge induction-heating inverter operates at 20-100 kHz and demands fast, high-current gate drive to minimize switching loss. The IR2114SSPBF delivers 2 A source and 3 A sink to switch 600 V/40 A IGBTs in under 80 ns, while the integrated over-current protection reacts to tank-detuning faults within one switching cycle. The 24-SSOP package dissipates the gate-drive loss comfortably with a small copper-pour heatsink.
추천
Welding Inverter Power Stage
In an arc-welding inverter, the IR2114SSPBF drives the primary-side IGBT half-bridge of the high-frequency transformer that steps the rectified mains down to welding current levels. The 600 V offset rating handles the 540 V DC bus of a 3-phase rectified industrial mains, and the 3 A sink current reliably turns off the IGBTs even with high Miller-effect dv/dt. The shutdown pin interfaces directly with the welding current-sense comparator for fast arc-strike protection.
추천
EV Charging Station Auxiliary Converter
In a Level-2 EV charging station, the IR2114SSPBF drives the half-bridge of an isolated auxiliary converter that generates 12 V battery and housekeeping rails. The 600 V rating isolates the auxiliary converter from the PFC boost-switch transients, while the integrated over-current comparator protects against output short circuits on the 12 V rail. The 24-SSOP package is robust enough for the elevated ambient temperatures inside a sealed charging-station enclosure.
추천
추천 제품 요약
엔지니어링 참조 데이터: IR2114SSPBF — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IR2114SSTRPBF | IR2114-2SSPBF | IR2214SSPBF | IRS2011STRPBF |
|---|---|---|---|---|---|
| Package | 24-SSOP | 24-SSOP - same | 24-SSOP - same | 24-SSOP - same | 24-SSOP - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Offset Voltage (max) | 600 V | 600 V | 600 V | 1200 V | 200 V |
| Source Current | 2 A | 2 A | 2 A | 2.5 A | 1 A |
| Sink Current | 3 A | 3 A | 3 A | 3.5 A | 1 A |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | No |
| Over-Current Protection | Yes (integrated comparator) | Yes | Yes | Yes | No |
| Configuration | Half-bridge | Half-bridge | Half-bridge | Half-bridge | Half-bridge |
주요 차별점
- Integrated over-current comparator with FAULT output (vs IRS2011STRPBF)
- 2 A source / 3 A sink gate-drive capability (vs IRS2127STRPBF)
- 600 V offset rating in 24-SSOP with bootstrap diode (vs IR2214SSPBF)
설계 노트
Estimated: At a switching frequency of 50 kHz with a 100 nC total gate-charge IGBT (Q g = 100 nC) on each side of the half-bridge, the gate-drive loss for one IR2114SSPBF is approximately P_g = 2 * Qg * VCC * f_sw = 2 * 100 nC * 15 V * 50 kHz = 150 mW. The bootstrap supply adds another 1-3 mW of quiescent loss. Provide at least 1 square inch of copper pour under the exposed pad of the 24-SSOP to keep junction temperature rise below 20 C at this power level.
The 24-SSOP package has a thermal resistance theta_JA of approximately 80 C/W on a standard 1 oz 4-layer JEDEC board. At 150 mW gate-drive loss, junction temperature rises about 12 C above ambient. In high-temperature industrial enclosures (>70 C ambient), reduce switching frequency or use an external gate-drive buffer (e.g., 1EDI20N12AFXUMA1) to stay below the 150 C junction limit.
Place the VCC bypass capacitor (1 uF ceramic, X7R) within 3 mm of the VCC pin and the COM pin, with a short, wide trace to the gate-drive return. The bootstrap capacitor (typically 100 nF to 1 uF X7R, sized for Q_g of the high-side IGBT plus 30% margin) must be placed as close to the VBS pin as possible. Use a separate analog ground island for CS, FAULT, and logic pins to avoid switching-noise injection into the current-sense comparator.
Do not exceed the absolute maximum VS transient rating (typically -5 V to +VBS + 0.3 V). In hard-switched half-bridges, the VS pin can swing below COM due to stray inductance; add a 1-10 ohm gate resistor in series with the gate to damp the resulting ringing. The SD (shutdown) pin is internally pulled up - tie it to VDD if unused to avoid false shutdowns. Do not leave the FLT-CLR pin floating; a 100 kohm resistor to VDD sets a 10 us fault-clear time.
Separate the high-voltage switching loop (VS-HO-VBS) from the low-voltage logic loop (HIN/LIN-COM) by at least 5 mm of creepage on the PCB. Use a gate-drive return trace that runs parallel to and beneath the HO/LO gate traces to minimize loop inductance. Avoid routing the CS (current-sense) trace under the HO/LO traces or near the VBS bootstrap capacitor, as the dv/dt coupling can inject false faults into the over-current comparator.
규정 준수 정보
RoHS and lead-free per Infineon product page; not AEC-Q100 qualified (industrial-grade part, automotive variants may exist under different suffix). REACH compliance status confirmed by Infineon product declaration.
