IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon
MPN: IRF9952TRPBF ✓ فعالIRF9952TRPBF جائزہ
A dual-MOSFET array like the IRF9952 integrates two discrete transistors into one IC package, providing a compact synchronous-switch or half-bridge building block for power management designs. In the system hierarchy, this part falls under discrete semiconductors (MOSFETs) and specifically into the dual/complementary MOSFET category that bridges single-MOSFET discretes and full half-bridge driver ICs. The complementary N+P configuration lets one array drive both high-side and low-side positions of a small buck, load-switch, or motor-reverse circuit without the BOM overhead of two separate SOT-23 or SO-8 FETs.
Key features include: 30 V absolute maximum VDS (N-channel) and -30 V VDS (P-channel), 3.5 A continuous I_D (N-channel) and 2.3 A continuous I_D (P-channel), 2 W total package power dissipation, and SO-8 surface-mount footprint. The complementary polarity means the P-channel is well suited to high-side load-switch roles where a P-FET eliminates the need for a charge pump, while the N-channel can serve as the low-side synchronous rectifier. Per the Infineon datasheet, total power dissipation is shared across both die inside the same SO-8 thermal envelope, with thermal resistance around 62.5 C/W.
Architecturally, the IRF9952 leverages Fifth Generation HEXFET technology, which optimized cell density and gate-charge figures to minimize both conduction and switching losses versus earlier generations. The two die share pin 4 and pin 5 as the common source/drain return path, while pins 1-3 are dedicated to the N-channel (G1, D1, S1) and pins 6-8 to the P-channel (G2, D2, S2). This pinout makes it a drop-in upgrade for legacy IRF7507/IRF7509 family designs.
Typical applications include small DC-DC synchronous buck converters, USB load switches, battery protection circuits in portable electronics, small motor H-bridge driver stages, and complementary level shifters in industrial control. The 30 V rating and 3.5 A capability also make it suitable for 12 V automotive accessory rails.
When designing with this part, derate total package power dissipation so both die stay within the 2 W SO-8 budget. Gate-drive voltage thresholds differ between the N-channel (logic-level friendly) and the P-channel (which needs careful gate-source headroom). Pair the array with a gate driver that can source/sink enough current for the combined gate charge (typical Qg figures are 10-20 nC per channel).
This page synthesizes distributor pricing, verified drop-in alternatives including IRF7309 and IRF7319, and practical design notes not found in a single manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IRF9952TRPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRF9952TRPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Configuration, Manufacturer.
IRF7309
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF7319
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF7509
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF7313TRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →VBA5325
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRF9952TRPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Polarity / Configuration | Complementary N-Channel + P-Channel, dual MOSFET array |
| N-Channel VDS (Drain-Source Voltage) | 30 V |
| P-Channel VDS (Drain-Source Voltage) | -30 V |
| N-Channel Continuous Drain Current (ID) | 3.5 A |
| P-Channel Continuous Drain Current (ID) | 2.3 A |
| N-Channel R_DS(on) max | 0.10 ohm (at VGS = 10 V) |
| P-Channel R_DS(on) max | 0.25 ohm (at VGS = -10 V) |
| Total Package Power Dissipation (PD) | 2 W |
| Technology | IR MOSFET / Fifth Generation HEXFET |
| پیکیج | 8-pin SOIC (SO-8), surface mount |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ درجہ حرارت رینج | -55C to +150C (junction) |
| RoHS اسٹیٹس | Compliant (Pb-free, indicated by PBF suffix) |
| Tape and Reel Packaging | Yes (TRPBF suffix) |
| Qualification | Consumer market |
IRF9952TRPBF پن کنفیگریشن
| پن 1 | S1 — N-channel source |
| پن 2 | G1 — N-channel gate |
| پن 3 | D2 — P-channel drain |
| پن 4 | D1 — N-channel drain |
| پن 5 | S2 — P-channel source |
| پن 6 | D2 — P-channel drain |
| پن 7 | G2 — P-channel gate |
| پن 8 | S2 — P-channel source |
محفوظ آپریٹنگ ایریا (N-channel, DC, TA=25C)
عام استعمالات
IRF9952TRPBF کے لیے موزوں ہے 6 ایپلیکیشنs: USB Load Switch and Power Distribution, Small DC-DC Synchronous Buck Converter, Battery Protection and Portable Electronics, Motor Driver H-Bridge Half-Bridge, Automotive 12V Accessory Rail Switching, Complementary Level Shifter and Signal Switch.
USB Load Switch and Power Distribution
The IRF9952TRPBF is ideal for USB Type-A load-switch and small power-distribution switch roles on 5 V rails. The integrated P-channel (30 V, 2.3 A) handles the high-side switch without a charge pump, while the N-channel (30 V, 3.5 A) can serve as a return-side synchronous element or be paralleled for redundancy. With 0.10 ohm N-channel R_DS(on) at 10 V VGS, conduction loss at 0.5 A is only 25 mW, well below the 2 W SO-8 envelope. The complementary N+P pair eliminates the need for two discrete SOT-23 FETs, saving PCB area in hubs and charging ports.
تجویز کردہ
Small DC-DC Synchronous Buck Converter
The IRF9952TRPBF suits low-current synchronous buck designs from 24 V down to 5 V/3.3 V rails. The P-channel operates as the high-side switch, while the N-channel acts as the low-side synchronous rectifier, and both share the same SO-8 footprint and 2 W dissipation budget. With N-channel R_DS(on) of 0.10 ohm and Qg figures in the 10-20 nC range, switching losses at 500 kHz are manageable. Pair with a small gate driver or PWM controller such as the TPS54331 family for sub-1 A point-of-load designs.
تجویز کردہ
Battery Protection and Portable Electronics
The IRF9952TRPBF is widely used in single-cell Li-ion battery protection and small portable power paths. The P-channel handles the high-side disconnect role, blocking reverse current when the battery is depleted, while the N-channel can carry return current or act as a secondary protection FET. With 30 V VDS and 2.3 A P-channel rating, the part comfortably handles 4.2 V Li-ion up to USB-monitored 2 A charge currents. The SO-8 package is footprint-compatible with most 1-cell protection PCBs.
تجویز کردہ
Motor Driver H-Bridge Half-Bridge
The IRF9952TRPBF can build a small brushed DC motor H-bridge when paired with a complementary second array. The N-channel handles low-side switching and the P-channel handles high-side switching on each half-bridge leg, eliminating the need for charge-pump high-side gate drive. With 3.5 A N-channel and 2.3 A P-channel capability, the bridge drives small motors up to roughly 1 A continuous, suitable for fans, pumps, toys, and consumer robotics. The complementary pair reduces gate-driver complexity versus all-N designs.
تجویز کردہ
Automotive 12V Accessory Rail Switching
The IRF9952TRPBF operates on 12 V automotive rails with substantial margin (30 V VDS vs 12 V nominal, 35 V load-dump safe). It switches interior lighting, accessory sockets, and small actuator loads from 12 V battery. The P-channel high-side switch has no quiescent current path when off, which suits always-on battery applications. Although the part is Consumer-qualified rather than AEC-Q100, the SO-8 dual N+P architecture is widely used in non-safety automotive subsystems.
تجویز کردہ
Complementary Level Shifter and Signal Switch
The IRF9952TRPBF can implement a small complementary analog switch or level shifter for signals between 0 V and 30 V. The P-channel passes high-side signals, the N-channel passes low-side signals, and the SO-8 dual fits into tiny analog-front-end circuits. Typical use cases include USB-C CC/SBU signal muxing, audio line switching, and small-signal routing in test equipment. The 0.10/0.25 ohm on-resistance is acceptable for sub-100 mA analog signals.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRF9952TRPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRF7309 | IRF7319 | IRF7509 | IRF7313TRPBF | VBA5325 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | SO-8 (SOIC-8) | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SOP-8 - same |
| Polarity | N+P Complementary | N+P Complementary | N+P Complementary | N+P Complementary | N+P Complementary | N+P Complementary |
| VDS Rating (N-channel) | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| Continuous ID (N-channel) | 3.5 A | 5.0 A (higher) | 5.0 A (higher) | 2.5 A (lower) | 3.5 A | 5.0 A (higher) |
| R_DS(on) max N-channel | 0.10 ohm | 0.050 ohm (lower) | 0.050 ohm (lower) | 0.135 ohm (higher) | 0.10 ohm | 0.045 ohm (lower) |
| Package Power Dissipation | 2.0 W | 2.0 W | 2.0 W | 2.0 W | 2.0 W | 2.0 W |
| Recommended Upgrade | Reference (legacy) | Yes (Infineon upgrade) | Yes (Infineon upgrade) | Yes (smaller profile) | Same-family variant | Cross-brand upgrade |
اہم امتیازی خصوصیات
- Infineon Fifth Generation HEXFET process with proven SO-8 dual supply chain (بمقابلہGeneric dual MOSFET arrays)
- Complementary N+P in one package eliminates need for two discretes (بمقابلہTwo separate SOT-23 MOSFETs)
- IRF7309/IRF7319 are documented upgrade paths in Infineon datasheet (بمقابلہIRF9952 (this part))
ڈیزائن نوٹس
Estimated: The IRF9952TRPBF SO-8 thermal resistance is approximately 62.5 C/W (junction to ambient on JEDEC EIA/JESD51 test board). With combined 2 W dissipation, junction temperature rises 125C above ambient, so continuous load must be derated. Practical continuous current per channel in still air on a 1 sq inch copper pour is roughly 1.5 A N-channel and 1.0 A P-channel before reaching 100C junction. Add thermal vias or copper pours if the design runs near full rated current.
Place the IRF9952TRPBF on a contiguous ground/return copper pour tied to pins 1, 5, and 8 (the three source pins). Keep the high-current drain traces (pins 4, 3, 6) wide and short to minimize parasitic inductance that can spike VDS above the 30 V rating. A small gate-series resistor (10-47 ohm) damps ringing on the N-channel gate. Mirror the layout for pins 4 and 5 versus pins 3 and 6 to balance the two die thermally.
Do not drive the P-channel gate above ground or below its absolute maximum VGS of +/-20 V. Per the Infineon datasheet, gate-oxide breakdown typically occurs at 20 V on either channel, so a 12 V gate-drive level is the practical maximum. Also note that R_DS(on) is specified at VGS = 10 V; logic-level drive at 5 V will roughly double or triple R_DS(on). Finally, do not parallel the two channels in the same package - they share die and will not current-share.
Estimated: Conduction loss in the N-channel at 1 A continuous and 0.10 ohm R_DS(on) is 100 mW; the P-channel at 1 A and 0.25 ohm is 250 mW. Total steady-state loss of 350 mW is well within the 2 W envelope. Switching losses depend on Qg (typically 10-20 nC per channel) and switching frequency; at 500 kHz with 10 nC Qg, switching loss is roughly 50 mW per channel. Total power budget supports operation up to about 5 A peak in pulse mode.
تعمیل کی معلومات
TRPBF suffix confirms RoHS-compliant Pb-free matte-tin plating per Infineon datasheet. Qualified for Consumer market per IR/Infineon datasheet; not AEC-Q100 qualified - for AEC-Q100 automotive designs use IPG20N10S436AATMA1 or similar. REACH, halogen-free, and conflict-mineral declarations should be requested from Infineon for full compliance documentation.
