IRFR2905ZTRPBF - 55V N-CH HEXFET MOSFET, 14.5mΩ | Infineon
MPN: IRFR2905ZTRPBF ✓ فعالIRFR2905ZTRPBF جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching or amplifying electronic signals, and is a key building block of modern power management. HEXFET is Infineon's (formerly International Rectifier) trademarked trench MOSFET technology, which places the gate in a vertical trench to maximize cell density and minimize RDS(on). The IRFR2905Z family sits inside the broader power MOSFET taxonomy: trench MOSFET -> power MOSFET -> discrete semiconductor -> power management, where it is typically used as a low-side switch, high-side switch, or synchronous rectifier in switch-mode power supplies (SMPS), motor drives, and load switches.
Key features include a 175 °C maximum junction operating temperature, fast switching speed, improved repetitive avalanche rating, and a low typical gate charge (Qg) of 29 nC. The device is built on Infineon's IR MOSFET process, optimized for low conduction loss in DC-DC converters, motor control H-bridges, and battery protection circuits. Its avalanche-rated design also improves reliability in inductive load switching.
The IRFR2905ZTRPBF's typical gate threshold VGS(th) sits in the 2.0 V to 4.0 V range with full enhancement at 10 V VGS, making it directly compatible with standard 5 V/12 V gate-drive logic when used at the higher gate voltage. The combination of low RDS(on), high ID, and DPAK thermal performance (PD = 110 W at Tc = 25 °C) makes it well suited for synchronous rectification in buck converters, where conduction losses dominate at high load currents.
Typical applications include high-current DC-DC buck converters, synchronous rectification stages in SMPS, battery management and protection in 12 V/24 V systems, motor-drive H-bridges, and power-OR / load-share circuits. Its low RDS(on) also makes it attractive for hot-swap controllers and eFuse implementations.
When designing with this part, pay attention to gate-drive voltage: a 10 V VGS is required to fully enhance the channel and achieve the datasheet 14.5 mΩ RDS(on). At 5 V VGS, RDS(on) roughly doubles, so verify that your gate driver can swing to 10 V. Also use Kelvin-source PCB layout when possible, especially above 30 A, to avoid parasitic source-inductance-induced switching losses.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, with parametric comparisons and recommended companion components for a complete design-in.
کے لیے ڈراپ اِن متبادل IRFR2905ZTRPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRFR2905ZTRPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Avalanche Rated, Drain-Source Voltage (VDS), MSL Level, Mounting Type, On-Resistance RDS(on) max @ VGS=10V.
IRFR2905ZTRLPBF
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFR2905ZPBF
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFR3207ZTRPBF
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFB3207ZPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →DMNH6012LK3Q-13
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
FDD5353
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
STD60NF55LAT4
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IRFR2905ZTRPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET, trench) |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 59 A |
| On-Resistance RDS(on) max @ VGS=10V | 14.5 mΩ |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 29 nC (typical) |
| Maximum Power Dissition (PD) at Tc=25C | 110 W |
| آپریٹنگ جنکشن درجہ حرارت | -55 °C to +175 °C |
| پیکیج | TO-252AA (DPAK), 3-pin (2+Tab), surface mount |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Avalanche Rated | Yes (improved repetitive avalanche rating) |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 |
| Tape and Reel | Yes (TR suffix in MPN) |
IRFR2905ZTRPBF پن کنفیگریشن
| پن 1 | Gate — Gate control input; drive with 10 V VGS for full enhancement |
| پن 2 | Drain — Drain terminal (also connected to the metal tab); main current input |
| پن 3 | Source — Source terminal; main current return, connect to PCB ground plane |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
IRFR2905ZTRPBF کے لیے موزوں ہے 7 ایپلیکیشنs: 12V / 24V Synchronous Rectification in Buck Converters, Motor Drive H-Bridge (12-24V Brushed DC), Battery Management and Protection (12V/24V Lead-Acid and Li-Ion), Hot-Swap / eFuse Controller Power Path, Automotive 12V Load Switch (Lighting, Pumps, Fans), Power OR-ing / Redundant Supply Switch, Inductive Load Switching (Solenoids, Relays, Valves).
12V / 24V Synchronous Rectification in Buck Converters
The IRFR2905ZTRPBF is ideal for the low-side synchronous rectifier position in 12 V and 24 V buck converters used in telecom, server, and industrial DC-DC modules. Its 14.5 mΩ RDS(on) at VGS=10V keeps conduction losses to roughly 0.6 W at 20 A load, while the 55 V VDS rating provides ~30% margin above 24 V input transients. Placed in the standard DPAK footprint with a 1 sq-in copper pour, it can sustain continuous currents up to ~30 A in free air. Compared to a Schottky diode, it eliminates reverse-recovery loss and improves efficiency by 2-4% at heavy load.
تجویز کردہ
Motor Drive H-Bridge (12-24V Brushed DC)
The IRFR2905ZTRPBF works well as the low-side switch in 12 V and 24 V brushed DC motor H-bridges driving pumps, fans, and small actuators. Its 59 A continuous rating and 175 °C TJmax give plenty of thermal margin for the repetitive inrush current when motors start under load. The 14.5 mΩ RDS(on) keeps conduction loss low during PWM operation at 20-25 kHz. Drive it with a dedicated gate driver such as the IR2109SPBF or IR2110SPBF to achieve fast turn-on/turn-off and minimize switching losses in the motor PWM frequency range.
تجویز کردہ
Battery Management and Protection (12V/24V Lead-Acid and Li-Ion)
The IRFR2905ZTRPBF is widely used as the disconnect switch in 12 V and 24 V battery management systems (BMS) for e-bikes, e-scooters, backup power, and small EVs. Its low 14.5 mΩ RDS(on) minimizes voltage drop across the disconnect path, preserving usable battery capacity, while the 59 A ID rating handles peak motor/inverter loads. The 55 V VDS gives ample margin for 24 V battery transients and inductive flyback. Combined with a battery monitor IC, it forms the basis of a robust, low-loss solid-state battery switch.
تجویز کردہ
Hot-Swap / eFuse Controller Power Path
In 12 V and 24 V hot-swap and eFuse designs, the IRFR2905ZTRPBF serves as the main pass-FET that limits inrush current when a board is plugged into a live backplane. Its 14.5 mΩ RDS(on) keeps steady-state loss low at full load (e.g., only 0.36 W at 5 A), while the 59 A ID rating supports cards drawing up to several amps continuous. The avalanche rating adds robustness during the inrush transient when the bulk output capacitor charges. Use a dedicated hot-swap controller IC to drive its gate and protect against over-current.
تجویز کردہ
Automotive 12V Load Switch (Lighting, Pumps, Fans)
The IRFR2905ZTRPBF is well suited to 12 V automotive load switches driving lamps, LED drivers, fuel pumps, and cooling fans. Its 55 V VDS handles load-dump transients up to ~40 V with proper TVS clamping, while the 59 A ID rating supports high inrush from incandescent lamps and motor loads. The DPAK footprint is easily placed on the main ECU PCB with a thermal via array under the tab. For AEC-Q100 qualified variants in safety-critical automotive designs, consider the IRFR2905ZTRPBF-QL or a dedicated automotive-grade part instead.
تجویز کردہ
Power OR-ing / Redundant Supply Switch
The IRFR2905ZTRPBF is a good fit for power OR-ing in redundant 12 V/24 V supply architectures used in servers, telecom, and industrial control. Place it in the return (low-side) or supply path with its gate driven so it conducts only when its source-side supply is the highest voltage. Its low 14.5 mΩ RDS(on) and 59 A current capability handle full system load while keeping dissipation low. The avalanche rating also helps absorb reverse-current transients during supply switchover events in diode-OR replacements.
تجویز کردہ
Inductive Load Switching (Solenoids, Relays, Valves)
The IRFR2905ZTRPBF's avalanche rating makes it well-suited for switching inductive loads such as solenoids, relay coils, and hydraulic valves in industrial automation. When the MOSFET turns off, the coil's stored energy produces a voltage spike; the IRFR2905Z's repetitive avalanche capability absorbs that energy directly without requiring a separate TVS or snubber in many 12 V/24 V designs. Its 14.5 mΩ RDS(on) keeps coil-driving loss low, and the 59 A ID rating supports high inrush from large solenoids. A simple freewheel diode across the load is still recommended for maximum reliability.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRFR2905ZTRPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRFR2905ZTRLPBF | IRFR2905ZPBF | IRFR3207ZTRPBF | DMNH6012LK3Q-13 | FDD5353 | STD60NF55LAT4 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Diodes Incorporated | onsemi | STMicroelectronics |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same |
| Drain-Source Voltage (VDS) | 55 V | 55 V | 55 V | 75 V | 60 V | 60 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 59 A | 59 A | 59 A | 56 A | 60 A | 50 A | 60 A |
| RDS(on) max @ VGS=10V | 14.5 mΩ | 14.5 mΩ | 14.5 mΩ | 13.8 mΩ | 11 mΩ | 35 mΩ | 14 mΩ |
| Technology | HEXFET (trench) | HEXFET (trench) | HEXFET (trench) | HEXFET (trench) | Trench MOSFET | Trench MOSFET | STripFET |
اہم امتیازی خصوصیات
- Lowest published RDS(on) in this voltage/package class from authorized channels (بمقابلہFDD5353 (onsemi))
- Better RDS(on) than cross-brand alternatives at competitive cost (بمقابلہDMNH6012LK3Q-13 (Diodes Incorporated))
- Infineon HEXFET reliability and broad distributor inventory (بمقابلہSTD60NF55LAT4 (STMicroelectronics))
- Compatible voltage rating at lower cost than higher-voltage alternative (بمقابلہIRFR3207ZTRPBF (Infineon 75V))
ڈیزائن نوٹس
Estimated: at continuous 30 A load with RDS(on) of 14.5 mΩ, conduction loss is approximately I² × RDS(on) = 30² × 0.0145 = 13.05 W. On a DPAK mounted to a 1 sq-in 1 oz copper pour, thermal resistance θJA is roughly 50-60 °C/W (vs 31.4 °C/W on an infinite heatsink). This produces a junction-temperature rise of ~700 °C above ambient at 30 A - clearly exceeding the 175 °C limit. Therefore, derate to roughly 12-15 A continuous in free air, or up to 30 A with a small heatsink or 4+ sq-in copper pour. Always verify against the manufacturer's SOA curve for your specific PCB layout.
Use a Kelvin-source layout (separate gate-drive return trace connected directly to the Source pin, bypassing the main source current path) to avoid parasitic source inductance inducing gate-drive oscillations and slowing turn-off. Place a 10 Ω to 100 Ω gate resistor in series to damp any ringing. The DPAK tab must be soldered to a copper pour with multiple thermal vias (typical 4-6 vias, 0.3 mm drill, 1 oz plating) connecting to an inner-plane heat-spreader for adequate cooling.
Do not drive the gate with only 5 V logic levels - at VGS=4.5 V, RDS(on) roughly doubles to ~28 mΩ and conduction losses increase 2x. Use a gate driver that swings to 10 V (or 12 V) for full enhancement. Also watch the VGS maximum rating of ±20 V - a gate-zener clamp is recommended if the gate drive overshoots above 18 V during switching transients. Finally, never exceed the 55 V VDS rating even transiently - in 24 V industrial systems, inductive load transients can easily spike above the bus voltage, so add a TVS or snubber if needed.
Keep the high-current loop (input capacitor → drain → source → input capacitor return) as small as possible to minimize parasitic inductance. In a buck converter, place the input ceramic capacitor directly next to the drain and source pins of the MOSFET to form a tight switching loop. Use wide copper pours (≥50 mil) on both top and inner layers for the drain and source paths. Avoid running signal traces under the DPAK tab to prevent noise coupling into sensitive analog circuits.
تعمیل کی معلومات
Lead-free and RoHS compliant per Infineon product page. Not AEC-Q100 qualified - for automotive safety-critical applications use IRFR2905ZTRPBF-QL or dedicated automotive-grade part.
