IRFR2905ZTRPBF - 55V N-CH HEXFET MOSFET, 14.5mΩ | Infineon
MPN: IRFR2905ZTRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.61 | $610.00 |
| 2,500 | $0.52 | $1,300.00 |
IRFR2905ZTRPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching or amplifying electronic signals, and is a key building block of modern power management. HEXFET is Infineon's (formerly International Rectifier) trademarked trench MOSFET technology, which places the gate in a vertical trench to maximize cell density and minimize RDS(on). The IRFR2905Z family sits inside the broader power MOSFET taxonomy: trench MOSFET -> power MOSFET -> discrete semiconductor -> power management, where it is typically used as a low-side switch, high-side switch, or synchronous rectifier in switch-mode power supplies (SMPS), motor drives, and load switches.
Key features include a 175 °C maximum junction operating temperature, fast switching speed, improved repetitive avalanche rating, and a low typical gate charge (Qg) of 29 nC. The device is built on Infineon's IR MOSFET process, optimized for low conduction loss in DC-DC converters, motor control H-bridges, and battery protection circuits. Its avalanche-rated design also improves reliability in inductive load switching.
The IRFR2905ZTRPBF's typical gate threshold VGS(th) sits in the 2.0 V to 4.0 V range with full enhancement at 10 V VGS, making it directly compatible with standard 5 V/12 V gate-drive logic when used at the higher gate voltage. The combination of low RDS(on), high ID, and DPAK thermal performance (PD = 110 W at Tc = 25 °C) makes it well suited for synchronous rectification in buck converters, where conduction losses dominate at high load currents.
Typical applications include high-current DC-DC buck converters, synchronous rectification stages in SMPS, battery management and protection in 12 V/24 V systems, motor-drive H-bridges, and power-OR / load-share circuits. Its low RDS(on) also makes it attractive for hot-swap controllers and eFuse implementations.
When designing with this part, pay attention to gate-drive voltage: a 10 V VGS is required to fully enhance the channel and achieve the datasheet 14.5 mΩ RDS(on). At 5 V VGS, RDS(on) roughly doubles, so verify that your gate driver can swing to 10 V. Also use Kelvin-source PCB layout when possible, especially above 30 A, to avoid parasitic source-inductance-induced switching losses.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, with parametric comparisons and recommended companion components for a complete design-in.
Drop-in alternatives for IRFR2905ZTRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFR2905ZTRPBF (same form factor and footprint) — differing in Avalanche Rated, Drain-Source Voltage (VDS), MSL Level, Mounting Type, On-Resistance RDS(on) max @ VGS=10V.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFR2905ZTRLPBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRFR2905ZPBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRFR3207ZTRPBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRFB3207ZPBF
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →DMNH6012LK3Q-13
✅ Drop-In📋 Reference alternative (not in catalog)
FDD5353
✅ Drop-In📋 Reference alternative (not in catalog)
STD60NF55LAT4
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR2905ZTRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET, trench) |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 59 A |
| On-Resistance RDS(on) max @ VGS=10V | 14.5 mΩ |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 29 nC (typical) |
| Maximum Power Dissition (PD) at Tc=25C | 110 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | TO-252AA (DPAK), 3-pin (2+Tab), surface mount |
| Mounting Type | Surface Mount |
| Avalanche Rated | Yes (improved repetitive avalanche rating) |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Tape and Reel | Yes (TR suffix in MPN) |
IRFR2905ZTRPBF Pin Configuration
| Pin 1 | Gate — Gate control input; drive with 10 V VGS for full enhancement |
| Pin 2 | Drain — Drain terminal (also connected to the metal tab); main current input |
| Pin 3 | Source — Source terminal; main current return, connect to PCB ground plane |
Safe Operating Area (DC)
Typical Applications
IRFR2905ZTRPBF is suitable for 7 applications: 12V / 24V Synchronous Rectification in Buck Converters, Motor Drive H-Bridge (12-24V Brushed DC), Battery Management and Protection (12V/24V Lead-Acid and Li-Ion), Hot-Swap / eFuse Controller Power Path, Automotive 12V Load Switch (Lighting, Pumps, Fans), Power OR-ing / Redundant Supply Switch, Inductive Load Switching (Solenoids, Relays, Valves).
12V / 24V Synchronous Rectification in Buck Converters
The IRFR2905ZTRPBF is ideal for the low-side synchronous rectifier position in 12 V and 24 V buck converters used in telecom, server, and industrial DC-DC modules. Its 14.5 mΩ RDS(on) at VGS=10V keeps conduction losses to roughly 0.6 W at 20 A load, while the 55 V VDS rating provides ~30% margin above 24 V input transients. Placed in the standard DPAK footprint with a 1 sq-in copper pour, it can sustain continuous currents up to ~30 A in free air. Compared to a Schottky diode, it eliminates reverse-recovery loss and improves efficiency by 2-4% at heavy load.
Recommended
Motor Drive H-Bridge (12-24V Brushed DC)
The IRFR2905ZTRPBF works well as the low-side switch in 12 V and 24 V brushed DC motor H-bridges driving pumps, fans, and small actuators. Its 59 A continuous rating and 175 °C TJmax give plenty of thermal margin for the repetitive inrush current when motors start under load. The 14.5 mΩ RDS(on) keeps conduction loss low during PWM operation at 20-25 kHz. Drive it with a dedicated gate driver such as the IR2109SPBF or IR2110SPBF to achieve fast turn-on/turn-off and minimize switching losses in the motor PWM frequency range.
Recommended
Battery Management and Protection (12V/24V Lead-Acid and Li-Ion)
The IRFR2905ZTRPBF is widely used as the disconnect switch in 12 V and 24 V battery management systems (BMS) for e-bikes, e-scooters, backup power, and small EVs. Its low 14.5 mΩ RDS(on) minimizes voltage drop across the disconnect path, preserving usable battery capacity, while the 59 A ID rating handles peak motor/inverter loads. The 55 V VDS gives ample margin for 24 V battery transients and inductive flyback. Combined with a battery monitor IC, it forms the basis of a robust, low-loss solid-state battery switch.
Recommended
Hot-Swap / eFuse Controller Power Path
In 12 V and 24 V hot-swap and eFuse designs, the IRFR2905ZTRPBF serves as the main pass-FET that limits inrush current when a board is plugged into a live backplane. Its 14.5 mΩ RDS(on) keeps steady-state loss low at full load (e.g., only 0.36 W at 5 A), while the 59 A ID rating supports cards drawing up to several amps continuous. The avalanche rating adds robustness during the inrush transient when the bulk output capacitor charges. Use a dedicated hot-swap controller IC to drive its gate and protect against over-current.
Recommended
Automotive 12V Load Switch (Lighting, Pumps, Fans)
The IRFR2905ZTRPBF is well suited to 12 V automotive load switches driving lamps, LED drivers, fuel pumps, and cooling fans. Its 55 V VDS handles load-dump transients up to ~40 V with proper TVS clamping, while the 59 A ID rating supports high inrush from incandescent lamps and motor loads. The DPAK footprint is easily placed on the main ECU PCB with a thermal via array under the tab. For AEC-Q100 qualified variants in safety-critical automotive designs, consider the IRFR2905ZTRPBF-QL or a dedicated automotive-grade part instead.
Recommended
Power OR-ing / Redundant Supply Switch
The IRFR2905ZTRPBF is a good fit for power OR-ing in redundant 12 V/24 V supply architectures used in servers, telecom, and industrial control. Place it in the return (low-side) or supply path with its gate driven so it conducts only when its source-side supply is the highest voltage. Its low 14.5 mΩ RDS(on) and 59 A current capability handle full system load while keeping dissipation low. The avalanche rating also helps absorb reverse-current transients during supply switchover events in diode-OR replacements.
Recommended
Inductive Load Switching (Solenoids, Relays, Valves)
The IRFR2905ZTRPBF's avalanche rating makes it well-suited for switching inductive loads such as solenoids, relay coils, and hydraulic valves in industrial automation. When the MOSFET turns off, the coil's stored energy produces a voltage spike; the IRFR2905Z's repetitive avalanche capability absorbs that energy directly without requiring a separate TVS or snubber in many 12 V/24 V designs. Its 14.5 mΩ RDS(on) keeps coil-driving loss low, and the 59 A ID rating supports high inrush from large solenoids. A simple freewheel diode across the load is still recommended for maximum reliability.
Recommended
Recommended Products Summary
Engineering reference data for IRFR2905ZTRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR2905ZTRLPBF | IRFR2905ZPBF | IRFR3207ZTRPBF | DMNH6012LK3Q-13 | FDD5353 | STD60NF55LAT4 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Diodes Incorporated | onsemi | STMicroelectronics |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same |
| Drain-Source Voltage (VDS) | 55 V | 55 V | 55 V | 75 V | 60 V | 60 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 59 A | 59 A | 59 A | 56 A | 60 A | 50 A | 60 A |
| RDS(on) max @ VGS=10V | 14.5 mΩ | 14.5 mΩ | 14.5 mΩ | 13.8 mΩ | 11 mΩ | 35 mΩ | 14 mΩ |
| Technology | HEXFET (trench) | HEXFET (trench) | HEXFET (trench) | HEXFET (trench) | Trench MOSFET | Trench MOSFET | STripFET |
Key Differentiators
- Lowest published RDS(on) in this voltage/package class from authorized channels (vs FDD5353 (onsemi))
- Better RDS(on) than cross-brand alternatives at competitive cost (vs DMNH6012LK3Q-13 (Diodes Incorporated))
- Infineon HEXFET reliability and broad distributor inventory (vs STD60NF55LAT4 (STMicroelectronics))
- Compatible voltage rating at lower cost than higher-voltage alternative (vs IRFR3207ZTRPBF (Infineon 75V))
Design Notes
Estimated: at continuous 30 A load with RDS(on) of 14.5 mΩ, conduction loss is approximately I² × RDS(on) = 30² × 0.0145 = 13.05 W. On a DPAK mounted to a 1 sq-in 1 oz copper pour, thermal resistance θJA is roughly 50-60 °C/W (vs 31.4 °C/W on an infinite heatsink). This produces a junction-temperature rise of ~700 °C above ambient at 30 A - clearly exceeding the 175 °C limit. Therefore, derate to roughly 12-15 A continuous in free air, or up to 30 A with a small heatsink or 4+ sq-in copper pour. Always verify against the manufacturer's SOA curve for your specific PCB layout.
Use a Kelvin-source layout (separate gate-drive return trace connected directly to the Source pin, bypassing the main source current path) to avoid parasitic source inductance inducing gate-drive oscillations and slowing turn-off. Place a 10 Ω to 100 Ω gate resistor in series to damp any ringing. The DPAK tab must be soldered to a copper pour with multiple thermal vias (typical 4-6 vias, 0.3 mm drill, 1 oz plating) connecting to an inner-plane heat-spreader for adequate cooling.
Do not drive the gate with only 5 V logic levels - at VGS=4.5 V, RDS(on) roughly doubles to ~28 mΩ and conduction losses increase 2x. Use a gate driver that swings to 10 V (or 12 V) for full enhancement. Also watch the VGS maximum rating of ±20 V - a gate-zener clamp is recommended if the gate drive overshoots above 18 V during switching transients. Finally, never exceed the 55 V VDS rating even transiently - in 24 V industrial systems, inductive load transients can easily spike above the bus voltage, so add a TVS or snubber if needed.
Keep the high-current loop (input capacitor → drain → source → input capacitor return) as small as possible to minimize parasitic inductance. In a buck converter, place the input ceramic capacitor directly next to the drain and source pins of the MOSFET to form a tight switching loop. Use wide copper pours (≥50 mil) on both top and inner layers for the drain and source paths. Avoid running signal traces under the DPAK tab to prevent noise coupling into sensitive analog circuits.
Compliance Information
Lead-free and RoHS compliant per Infineon product page. Not AEC-Q100 qualified - for automotive safety-critical applications use IRFR2905ZTRPBF-QL or dedicated automotive-grade part.
