IRS2302STRPBF - 600V Half-Bridge Gate Driver | Infineon | SOIC-8
MPN: IRS2302STRPBF ✓ فعالIRS2302STRPBF جائزہ
A half-bridge gate driver IC is a type of high-voltage level shifter and gate driver used in power electronics to control a pair of switches arranged in a totem-pole or half-bridge configuration. The device translates low-voltage PWM logic signals (3.3 V / 5 V) from a microcontroller or DSP into the high-voltage gate-drive signals required to switch the high-side power switch whose source/drain swings with the phase node. The driver belongs to the broader family of gate driver ICs, which sits within the power management semiconductor hierarchy: gate driver -> high-voltage half-bridge driver -> driver IC -> power management IC -> semiconductor.
Key features include 3.3 V, 5 V, and 15 V logic-compatible inputs, undervoltage lockout (UVLO) for both VCC and VBS rails, cross-conduction prevention logic with built-in dead time, and a dedicated shutdown pin for fast protection response. The IRS2302STRPBF additionally provides soft turn-on, an external programmable dead-time architecture, and matched propagation delays to minimize duty-cycle distortion at high PWM frequencies. The 8-SOIC package is industry standard for this voltage class and is compatible with most half-bridge layouts designed around IR (now Infineon) driver generations.
Architecturally the IRS2302STRPBF uses a level-shifted high-side channel with a floating well that tolerates the rapid dV/dt transients present on the phase node of a switching half-bridge, plus a ground-referenced low-side channel that shares VCC. The 0.2 A/0.35 A asymmetric source/sink ratings compensate for typical MOSFET gate-charge asymmetry and avoid shoot-through by ensuring that turn-off (sink) is faster than turn-on (source). The shutdown input overrides the logic inputs and forces both gate outputs low, providing a hardware path for fault propagation from an upstream comparator or DESAT detector.
Typical applications include motor drive inverters for BLDC and PMSM motors, uninterruptible power supplies (UPS), switch-mode power supplies (SMPS) with half-bridge or active-clamp topologies, induction heating inverters, solar micro-inverters, and Class D audio amplifiers. The 600 V rating comfortably supports 230 V AC or 380 V DC bus designs when properly derated.
When designing with the IRS2302STRPBF, choose a bootstrap diode with fast recovery and a low forward drop, and size the bootstrap capacitor to supply the high-side gate charge with no more than ~10% droop. Place the VCC and VBS bypass capacitors as close as possible to pins 1 and 8 respectively to suppress ringing. For noise immunity, route the shutdown line away from the switching node and add a small RC filter if long traces are unavoidable.
کے لیے ڈراپ اِن متبادل IRS2302STRPBF — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IRS2302STRPBF (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Logic Input Compatibility, MSL Level, Configuration, Number of Drivers.
IRS2302SPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRS2127STRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IR21064STRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IR21531STRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRS2109STRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRS4428STRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRS2153DSTRPBF
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IRS2302STRPBF زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Driver Configuration | Half-Bridge (High and Low Side, Independent) |
| Number of Drivers | 2 |
| Supply Voltage (VCC) | 5 V to 20 V |
| Offset Voltage (High-Side) | Up to +600 V |
| Source Current (typ.) | 0.2 A |
| Sink Current (typ.) | 0.35 A |
| رائز ٹائم | 130 ns (typ.) |
| فال ٹائم | 50 ns (typ.) |
| Propagation Delay | 220 ns (typ.) |
| Logic Input Compatibility | 3.3 V, 5 V, 15 V |
| Input Type | Non-Inverting |
| Shutdown Pin | Yes |
| UVLO | Yes (VCC and VBS) |
| Cross-Conduction Protection | Yes (built-in dead time) |
| آپریٹنگ درجہ حرارت | -40C to +125C |
| پیکیج | 8-SOIC (3.90 mm body) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | 2 (per JEDEC J-STD-020) |
| ہیلوجن فری | Yes |
| RoHS اسٹیٹس | Compliant |
IRS2302STRPBF پن کنفیگریشن
| پن 1 | VCC — Low-side and logic supply voltage (5 V to 20 V) |
| پن 2 | HIN — Logic input for high-side gate driver output (HO) |
| پن 3 | LIN — Logic input for low-side gate driver output (LO) |
| پن 4 | SD — Shutdown input, active low, forces both HO and LO low |
| پن 5 | VSS — Logic ground / low-side return |
| پن 6 | VS — High-side floating supply return / phase node connection |
| پن 7 | LO — Low-side gate drive output |
| پن 8 | HO — High-side gate drive output (referenced to VS) |
عام استعمالات
IRS2302STRPBF کے لیے موزوں ہے 6 ایپلیکیشنs: BLDC / PMSM Motor Drive Inverter, Half-Bridge SMPS Primary Drive, Solar Micro-Inverter Power Stage, Uninterruptible Power Supply (UPS) Inverter, Induction Heating Inverter, Class D Audio Amplifier Output Stage.
BLDC / PMSM Motor Drive Inverter
The IRS2302STRPBF is well-suited to drive a single phase leg of a 3-phase BLDC or PMSM motor inverter because its 600 V high-side rating covers 220 V AC-line-rectified bus designs up to 380 V DC, and its 0.2 A source / 0.35 A sink drive currents switch typical 600 V MOSFETs at up to 50 kHz PWM. The matched propagation delays (220 ns typical) keep the high-side and low-side channels phase-accurate, which is critical for sinusoidal commutation. The integrated shutdown pin provides hardware-level fault propagation from DESAT or overcurrent comparators, disabling both gate outputs within microseconds. For full 3-phase integration, designers typically pair three IRS2302STRPBF channels or migrate to the IRS2334MTRPBF.
تجویز کردہ
Half-Bridge SMPS Primary Drive
In a half-bridge SMPS primary-side topology, the IRS2302STRPBF drives two primary MOSFETs at up to 600 V bus with symmetric timing. The built-in UVLO on both VCC and VBS prevents partial-turn-on switching that would otherwise dissipate excessive switching loss, and the dV/dt immunity of the floating high-side channel handles the hard-switching transients of the phase node. Bootstrap operation eliminates the need for an isolated gate-drive supply for the high side, reducing BOM cost. The 0.35 A sink current ensures fast turn-off, limiting shoot-through losses in 100-300 kHz LLC and hard-switched half-bridge converters up to 500 W.
تجویز کردہ
Solar Micro-Inverter Power Stage
The IRS2302STRPBF is appropriate for grid-tied solar micro-inverter power stages that require driving a half-bridge from a 380-400 V DC link. Its 600 V floating channel handles the maximum DC bus voltage with adequate derating, while the 0.2 A source / 0.35 A sink drive currents are sufficient for driving CoolMOS or IGBT power switches at the 20-100 kHz switching frequencies typical of residential micro-inverters. The shutdown pin enables fast anti-islanding protection by disconnecting the half-bridge within one PWM cycle on grid-fault detection. Combined with an MPPT controller and a PFC stage, the IRS2302STRPBF supports EN50549-compliant 230 V AC output from a single 600 V stage.
تجویز کردہ
Uninterruptible Power Supply (UPS) Inverter
In a line-interactive or on-line UPS, the IRS2302STRPBF drives the half-bridge inverter stage that converts 48 V or 192 V battery DC into 230 V AC mains. The 600 V offset rating handles 192 V battery-link designs, and the matched channel delays ensure clean 50/60 Hz sine synthesis with low harmonic distortion. Hardware shutdown via the SD pin provides emergency disconnect within microseconds, complementing the firmware-driven battery management system. Combined with an output LC filter and a feedback controller, the IRS2302STRPBF supports 500 VA to 2 kVA UPS designs for SOHO and small-server backup power.
تجویز کردہ
Induction Heating Inverter
The IRS2302STRPBF is well-suited to drive the resonant half-bridge in induction-heating cooktops and RF induction heaters. Its 600 V offset handles 220-380 V rectified mains, while the 0.35 A sink current provides fast turn-off that limits shoot-through losses in the 20-100 kHz resonant switching cycles. The matched propagation delays and built-in cross-conduction prevention simplify timing-critical zero-voltage switching (ZVS) designs. The shutdown pin enables hardware-level emergency stop, mandatory in appliance-grade induction cooking equipment.
تجویز کردہ
Class D Audio Amplifier Output Stage
In a half-bridge Class D audio amplifier, the IRS2302STRPBF drives the output MOSFETs that synthesize an audio-frequency PWM signal from the audio input. The matched 220 ns propagation delays minimize distortion by keeping high-side and low-side pulses phase-accurate, while the 0.35 A sink current enables fast switching transitions that limit dead-time distortion above the 20 kHz audio band. The 600 V rating supports high-power amplifier designs up to several kilowatts, while the built-in UVLO prevents audible clicks during power-up. For full H-bridge audio amplifiers, two IRS2302STRPBF channels are paired with an audio-modulation controller.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IRS2302STRPBF — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IRS2302SPBF | IRS2127STRPBF | IR21064STRPBF | IR21531STRPBF | IRS2109STRPBF | IRS4428STRPBF | IRS2153DSTRPBF |
|---|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC (SOIC-8N) | 8-SOIC (SOIC-8N) - same | 8-SOIC (SOIC-8N) - same | 8-SOIC (SOIC-8N) - same | 8-SOIC (SOIC-8N) - same | 8-SOIC (SOIC-8N) - same | 8-SOIC (SOIC-8N) - same | 8-SOIC (SOIC-8N) - same |
| Driver Configuration | Half-Bridge (High + Low Side, Independent) | Half-Bridge - identical | High-Side only | Half-Bridge | Half-Bridge (self-oscillating) | Half-Bridge | Low-Side only | Half-Bridge (self-oscillating) |
| High-Side Offset Voltage | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V | N/A (low-side only) | 600 V |
| Source Current (typ.) | 0.2 A | 0.2 A | 0.2 A | 0.13 A | 0.21 A | 0.12 A | 0.6 A | 0.21 A |
| Sink Current (typ.) | 0.35 A | 0.35 A | 0.4 A | 0.27 A | 0.42 A | 0.25 A | 1.5 A | 0.42 A |
| Shutdown Pin | Yes (dedicated SD, active low) | Yes | Yes | Fault clear (replaces SD) | No (self-oscillating) | Split enable/disable logic | N/A (low-side only) | No (self-oscillating) |
| UVLO | Yes (VCC + VBS) | Yes (VCC + VBS) | Yes (VCC + VBS) | Yes (VCC + VBS) | Yes (VCC + VBS) | Yes (VCC + VBS) | VCC only | Yes (VCC + VBS) |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | Not applicable (internal oscillator) | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | Not applicable (internal oscillator) |
| Unit Price (qty 1, USD, as of 2026-09-14) | 1.18 | 1.10 (Tube, est.) | 1.32 | 1.45 | 1.05 | 1.28 | 0.95 | 1.22 |
اہم امتیازی خصوصیات
- Dedicated shutdown (SD) pin with hardware fault propagation (بمقابلہIR21531STRPBF)
- Asymmetric source/sink drive for MOSFET gate-charge asymmetry (بمقابلہIRS4428STRPBF)
- Integrated cross-conduction prevention with matched propagation delays (بمقابلہIR21064STRPBF)
ڈیزائن نوٹس
Place the VCC bypass capacitor (typically 0.1 uF ceramic plus 10 uF tantalum or aluminum-polymer) as close as possible to pins 1 (VCC) and 5 (VSS) to keep the high di/dt return currents out of the logic-ground traces. Use a separate analog ground island tied to VSS at a single point to avoid digital-to-analog ground bounce on the SD input. The VBS-to-VS capacitor (0.1 uF to 1 uF low-ESR ceramic) must be placed within 5 mm of pins 6 (VS) and 8 (HO/VBS) to minimize switching ringing on the high-side supply rail.
Size the bootstrap capacitor to limit voltage droop during the high-side on-time. The droop is approximately Vdroop = Qg_total / CBOOT, where Qg_total is the high-side MOSFET gate charge. For a 50 nC gate charge and a target droop of less than 0.5 V (below the VBS UVLO threshold by at least 0.5 V), CBOOT must be at least 0.1 uF; for 100 nC gate charge use at least 0.22 uF. Add a local 0.1 uF ceramic in parallel to suppress high-frequency ringing. Choose a fast-recovery bootstrap diode with trr less than 100 ns and a low forward drop (Schottky preferred for VCC up to 15 V; ultrafast recovery for higher VCC).
Do not connect the SD pin to a slow analog signal without a small RC filter, as noise on SD can cause spurious shutdown events. If the application does not need shutdown, tie SD to VCC through a 10 kohm pull-up resistor. Avoid routing the phase node (VS) under the device or any logic-level traces, as the dV/dt of the phase node can inject noise into the high-side well. For the floating high-side supply, never exceed 600 V offset between VSS and VS; even brief over-voltage transients can permanently damage the HVIC junction isolation.
The IRS2302STRPBF in 8-SOIC has a thermal resistance theta_JA of approximately 150 C/W on a 1-oz 1-square-inch copper pad. With typical 0.2 A drive into 50 nC gate charge at 50 kHz, the IC dissipates approximately 0.5 mW per channel of gate-drive loss, which is negligible. However, if the SD pin is held low for extended periods under high ambient temperatures, the quiescent current may increase the IC temperature. For high-temperature applications (>100 C ambient), increase PCB copper area around the exposed VSS pad or use a small forced-air cooling path to maintain junction temperature below 125 C maximum rating.
تعمیل کی معلومات
RoHS compliant and halogen-free per Infineon product page and DigiKey listing. MSL-2 per JEDEC J-STD-020. Not AEC-Q100 qualified; for automotive applications select AEC-Q100-qualified drivers in the Infineon portfolio or migrate to IRS2334MTRPBF (industrial grade, in stock on XAIPART).
