Infineon

IRS2109STRPBF - 600V Half-Bridge Gate Driver SOIC-8 | Infineon

MPN: IRS2109STRPBF βœ“ Active
In Stock Ships in 1-3 business days
600 V maximum Vdss 290 mA Id 8-SOIC (3.90 mm body width) Package
From $0.61 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $1.72 $1.72
10 $1.43 $14.30
100 $1.07 $107.00
500 $0.86 $430.00
1,000 $0.71 $710.00
2,500 $0.61 $1,525.00
ℹ️ All prices are in USD

Drop-in alternatives for IRS2109STRPBF β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

IRS2109SPBF

βœ… Drop-In
πŸ“¦ 8-SOIC
Same die, tube (non-TR) packaging variant; identical electrical specs (600V Voffset, 290/600 mA source/sink, 540 ns deadtime); pin-to-pin compatible

πŸ“‹ Reference alternative (not in catalog)

IRS21091STRPBF

βœ… Drop-In
πŸ“¦ 8-SOIC
Same 8-SOIC pinout, tighter prop-delay matching (typ. 520 ns vs 540 ns); updated Infineon revision with similar 600V/290/600 mA ratings; pin-to-pin compatible

πŸ“‹ Reference alternative (not in catalog)

IRS21064STRPBF

βœ… Drop-In
πŸ“¦ 8-SOIC
Same 8-SOIC footprint and 600V rating but independent HIN/LIN inputs (no internal fixed deadtime); pin-to-pin at PCB level but firmware must generate deadtime externally

πŸ“‹ Reference alternative (not in catalog)

L6387E

βœ… Drop-In
πŸ“¦ 8-SOIC
Cross-brand 600V half-bridge driver; same 8-SOIC pinout (HIN, LIN/SD, VCC, GND, LO, VS, HO, VBS); source/sink ~270/400 mA vs 290/600 mA (-12%/-33% sink); pin-to-pin compatible

πŸ“‹ Reference alternative (not in catalog)

IRS2008STRPBF

βœ… Drop-In
Infineon
πŸ“¦ 8-SOIC
Infineon Technologies Β· IRS2008STRPBF Β· Half-Bridge Gate Driver Β· Half-Bridge (High-Side + Low-Side, synchronous) Β· Synchronous (independent inputs) Β· 2 (high-side + low-side) Β· Non-Inverting Β· TTL/CMOS

βœ“ In Stock

$0.334 / Unit

View Datasheet β†’

IRS2109STRPBF Maximum Ratings & Electrical Characteristics

Configuration Half-Bridge
Input Type Non-Inverting, Single Input
Number of Drivers 2 (high-side + low-side)
High-Side Voltage (VOffset) 600 V maximum
Supply Voltage (VCC) 10 V to 20 V
Logic Input Voltage Compatible with 3.3 V and 5 V logic
Source Current (typical) 290 mA
Sink Current (typical) 600 mA
Propagation Delay (ton/off) 540 ns (typical)
Deadtime 540 ns (fixed, internal)
Operating Temperature -40C to +125C
Package 8-SOIC (3.90 mm body width)
Mounting Type Surface Mount
MSL Level 1 (unlimited floor life at <30C / 85% RH)
Lead-Free / RoHS Yes (Pb-free suffix 'PBF')
Packaging Tape and Reel (TR suffix)

IRS2109STRPBF Pin Configuration

SOIC-8 Package Pinout Diagram SOIC-8 8-pin small outline IC, 3.9x4.9mm, P1.27mm, JEDEC MS-012. 1 8 2 7 3 6 4 5 SOIC-8
Pin 1 VCC β€” Logic and low-side driver supply voltage (10 V to 20 V)
Pin 2 HIN β€” High-side logic input (3.3 V/5 V CMOS compatible)
Pin 3 LIN/SD β€” Low-side logic input / shutdown (active low)
Pin 4 GND β€” Logic and low-side driver ground
Pin 5 LO β€” Low-side gate drive output
Pin 6 VS β€” High-side floating supply return (switch node)
Pin 7 HO β€” High-side gate drive output
Pin 8 VBS β€” High-side floating supply (bootstrap supply)

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for IRS2109STRPBF Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

IRS2109STRPBF is suitable for 7 applications: BLDC / PMSM Motor Drive Inverter, Switch-Mode Power Supply (SMPS) Half-Bridge, Solar Microinverter, Induction Heating Cooktop Inverter, Class D Audio Amplifier Output Stage, Uninterruptible Power Supply (UPS) Inverter, HID Lighting Ballast.

🏭

BLDC / PMSM Motor Drive Inverter

The IRS2109STRPBF drives the high-side and low-side MOSFETs in each phase of a 3-phase brushless DC (BLDC) or permanent magnet synchronous motor (PMSM) inverter. Its 600 V high-side rating covers 110/220 VAC-derived bus voltages up to ~400 VDC, and the 290 mA source / 600 mA sink drive strength switches typical sub-100A motor MOSFETs cleanly at 15-20 kHz PWM. Three IRS2109STRPBF devices (one per phase) form a complete 3-phase gate-drive stage when paired with an MCU or DSP running a Field-Oriented Control (FOC) algorithm. The fixed 540 ns deadtime prevents shoot-through at high duty cycles, critical for protecting the half-bridge switches during regenerative braking transitions.

⚑

Switch-Mode Power Supply (SMPS) Half-Bridge

In a half-bridge or full-bridge SMPS topology, the IRS2109STRPBF provides the level-shifting and gate-drive amplification needed to switch the primary-side MOSFETs or IGBTs from a low-voltage PWM controller. Its floating high-side driver tolerates the rapidly switching half-bridge midpoint (VS pin) and the negative transients that occur when the primary-side switches commutate. With 540 ns propagation delay and fixed deadtime, the part operates reliably up to 100 kHz in telecom and server SMPS designs. The SOIC-8 footprint enables compact half-bridge layouts where board area is at a premium, such as 1U server power supplies and industrial DIN-rail converters.

✈️

Solar Microinverter

In a photovoltaic microinverter, the IRS2109STRPBF drives the half-bridge or full-bridge unfolding stage that converts DC panel voltage to grid-compatible AC. The 600 V high-side rating handles 600 V string voltages with adequate margin, while the soft turn-on feature reduces EMI emissions that could otherwise couple into sensitive grid-monitoring circuitry. Microinverter designs benefit from the part's compact 8-SOIC footprint, which simplifies the densely packed gate-drive and power sections on a small PCB. The fixed 540 ns deadtime is well-matched to switching frequencies in the 20-50 kHz range used for residential solar microinverters targeting 200-600 W output power.

🍳

Induction Heating Cooktop Inverter

The IRS2109STRPBF drives the resonant half-bridge or full-bridge inverter in an induction heating cooktop. The 600 V high-side rating handles rectified 220 VAC mains (peak ~310 V) plus resonant overshoot, while the 290/600 mA source/sink drive current switches IGBTs in the 20-50 A class typically used for 1.5-2 kW induction heating coils. The fixed 540 ns deadtime prevents shoot-through during the zero-voltage-switching (ZVS) transitions that occur in resonant induction heating topologies. The 8-SOIC package fits compact cooktop control boards, and the wide 10-20 V VCC range allows direct operation from a 15 V auxiliary supply.

🎧

Class D Audio Amplifier Output Stage

In a Class D audio amplifier, two IRS2109STRPBF devices drive the BTL (bridge-tied load) output stage that delivers amplified audio to the speaker. The 600 V rating is overkill for typical 30-50 V audio rails but provides headroom for automotive 42 V or industrial 96 V Bus applications. The 290/600 mA source/sink asymmetry accelerates turn-off to minimize dead-time-induced distortion, an important consideration for THD performance in audio amplifiers. The fixed 540 ns internal deadtime simplifies the modulator design and ensures symmetric dead-time insertion across both half-bridges of the BTL output stage, reducing even-order harmonic distortion at the speaker terminals.

πŸ–₯️

Uninterruptible Power Supply (UPS) Inverter

The IRS2109STRPBF drives the half-bridge or three-phase inverter in an online UPS that converts battery DC bus voltage to grid-frequency AC. The 600 V high-side rating handles the 192-400 V DC bus of typical 1-10 kVA UPS systems, and the 290/600 mA drive current switches IGBT modules in the 30-75 A class used for sub-10 kVA designs. The fixed 540 ns deadtime prevents cross-conduction during battery-to-AC and AC-to-battery mode changes when the inverter is momentarily reconfigured. Three IRS2109STRPBF devices drive a 3-phase UPS inverter, while two suffice for split-phase 120/240 V residential UPS designs.

πŸ’‘

HID Lighting Ballast

In a high-intensity-discharge (HID) lighting ballast for street lamps, projectors, or automotive headlights, the IRS2109STRPBF drives the full-bridge inverter that provides the high-voltage ignition pulse and steady-state AC drive to the lamp. The 600 V rating handles the 600 V ignition pulse required to strike HID arc tubes, while the 290/600 mA drive strength switches the IGBTs that commutate the resonant LC network. The compact 8-SOIC package fits the constrained PCB area of a street-lamp ballast housing, and the wide -40C to +125C operating temperature range accommodates outdoor cold-weather operation down to -30C ambient.

Recommended Products Summary

IRF540NPBF 200V N-channel MOSFET for 48V BLDC drives Used in: BLDC / PMSM Motor Drive Inverter IRFP4710PBF 100V N-channel MOSFET for high-current 48V drives Used in: BLDC / PMSM Motor Drive Inverter IPB60R099C6ATMA1 600V CoolMOS for 230VAC-derived bus drives Used in: BLDC / PMSM Motor Drive Inverter, Switch-Mode Power Supply (SMPS) Half-Bridge, Solar Microinverter BSC0906NSATMA1 Infineon Used in: Switch-Mode Power Supply (SMPS) Half-Bridge, Induction Heating Cooktop Inverter, HID Lighting Ballast ICE3AS03LJGXUMA1 Infineon Used in: Switch-Mode Power Supply (SMPS) Half-Bridge IPD60R380C6ATMA1 Infineon Used in: Solar Microinverter IFX007TAUMA1 Infineon Used in: Solar Microinverter IKW40N120H3FKSA1 1200V IGBT for induction heating Used in: Induction Heating Cooktop Inverter, Uninterruptible Power Supply (UPS) Inverter, HID Lighting Ballast IRF5305PBF Infineon Used in: Class D Audio Amplifier Output Stage IRFZ24NPBF Infineon Used in: Class D Audio Amplifier Output Stage BSZ130N03LSGATMA1 Infineon Used in: Uninterruptible Power Supply (UPS) Inverter
What is the maximum high-side voltage rating of the IRS2109STRPBF?
The IRS2109STRPBF high-side floating channel is rated for 600 V absolute maximum offset voltage, with negative transient voltage tolerance on the switch node (VS pin). This makes the part suitable for driving half-bridge and full-bridge power stages on 110/220 V AC-derived rails up to roughly 400 VDC bus voltage, with adequate margin for transients.
What is the typical source and sink current capability of the IRS2109STRPBF?
The IRS2109STRPBF delivers 290 mA typical source current and 600 mA typical sink current at room temperature. The asymmetric source/sink rating accelerates turn-off (reducing switching losses) while keeping drive strength balanced for typical MOSFET and IGBT gates in the 50 nC to 200 nC Qg class.
Where can I buy IRS2109STRPBF online and what is the price?
As of 2026-09-13, the IRS2109STRPBF is in stock at LCSC at approximately $0.77 per unit in single-piece quantity, with Heisener pricing near $2.69. DigiKey and Mouser also list the part; distributor stock varies daily. Tape-and-reel (TR) and tube (no suffix) versions are both available; lead time for large orders is typically 4-8 weeks.
What is the lead time for IRS2109STRPBF orders?
As of 2026-09-13, distributor-listed lead time for the IRS2109STRPBF is 'ships today' from LCSC and Mouser, with Heisener quoting immediate shipment for small quantities. For volumes above 10,000 pieces, expect 6-10 weeks lead time direct from Infineon or authorized distributors, depending on wafer allocation.
Is the IRS2109STRPBF in stock right now?
As of 2026-09-13, LCSC reports in-stock inventory of over 21,000 pieces. Heisener also reports over 21,000 pieces in stock. DigiKey and Mouser typically maintain inventory but quantities fluctuate - check the live distributor page for current stock levels before ordering.
What is the difference between IRS2109STRPBF and IRS2109SPBF?
Both the IRS2109STRPBF and IRS2109SPBF are the same silicon die and pin-compatible in 8-SOIC, but differ only in packaging format. The 'STRPBF' suffix indicates Tape and Reel (TR) with lead-free (Pb-free) finish, while the 'SPBF' suffix typically indicates Tube packaging with lead-free finish. Electrical specifications are identical; the choice is dictated by assembly line preferences.
IRS2109STRPBF vs IRS21844STRPBF - which should I choose?
The IRS2109STRPBF is a half-bridge driver (one high-side + one low-side channel) with fixed 540 ns deadtime, while the IRS21844STRPBF is a high-side/low-side driver pair with independent inputs and programmable deadtime. Choose IRS2109STRPBF for simpler single-PWM-input half-bridges with fixed deadtime. Choose IRS21844STRPBF when you need independent high/low-side control or adjustable deadtime for synchronous rectification.
What is the best drop-in replacement for IRS2109STRPBF?
Direct drop-in replacements in the same 8-SOIC package include the IRS21091STRPBF (an updated variant with tighter specifications from Infineon) and STMicroelectronics' L6387E (pin-compatible half-bridge driver). All three parts share the same 8-SOIC pinout and provide 600 V high-side drive capability, allowing direct PCB drop-in without layout changes.
Is the IRS2109STRPBF pin-compatible with the L6387E from STMicroelectronics?
Yes. The STMicroelectronics L6387E is a 600 V half-bridge gate driver in 8-SOIC that is pin-to-pin compatible with the Infineon IRS2109STRPBF. Both parts have the same pinout (HIN, LIN/SD, VCC, GND, LO, VS, HO, VBS), the same 600 V high-side rating, and similar 540 ns-class propagation delays. The L6387E is a verified cross-brand drop-in replacement.
When should I choose IRS2109STRPBF over IRS2104STRPBF or IRS2106STRPBF?
Choose the IRS2109STRPBF for half-bridge topologies with a single PWM input where fixed internal deadtime is acceptable. Choose IRS2104STRPBF if you need independent high/low-side inputs without internal deadtime (you must generate deadtime externally). Choose IRS2106STRPBF if you need a high-side-only driver (single channel, not half-bridge).
Is the IRS2109STRPBF suitable for BLDC motor drive applications?
Yes. The IRS2109STRPBF is widely used in 3-phase BLDC and PMSM motor drives, where three half-bridge drivers (one per phase) drive the high-side and low-side MOSFETs of the inverter. The 600 V rating covers 110/220 VAC-derived bus voltages, and the 290/600 mA drive strength handles typical sub-100A motor MOSFETs at switching frequencies up to 20 kHz.
What is the switching frequency limit of the IRS2109STRPBF?
With fixed 540 ns internal deadtime, the IRS2109STRPBF is most commonly used up to 50-100 kHz in practical half-bridge designs. Above ~150 kHz, the fixed deadtime becomes a significant portion of the switching period and reduces effective duty cycle. For higher-frequency designs, consider the IRS21844 with programmable deadtime.
Where can I download the IRS2109STRPBF datasheet PDF?
The official Infineon IRS2109STRPBF datasheet PDF is available at the Infineon product page at infineon.com (search the part number under Gate Driver ICs). The datasheet is also mirrored at octopart.com and digikey.com product pages. The file is approximately 1.2 MB and includes electrical characteristics, timing diagrams, and application circuits.
Where can I find the IRS2109STRPBF pinout diagram?
The IRS2109STRPBF 8-SOIC pinout is: Pin 1 = VCC, Pin 2 = HIN (high-side input), Pin 3 = LIN/SD (low-side input / shutdown), Pin 4 = GND, Pin 5 = LO (low-side output), Pin 6 = VS (high-side return / switch node), Pin 7 = HO (high-side output), Pin 8 = VBS (bootstrap supply). This pinout is documented in the Infineon datasheet and on the XAIPART product page.
What is the key difference between IRS2109STRPBF and IRS21064STRPBF?
The IRS2109STRPBF is a 600 V half-bridge driver with fixed 540 ns deadtime and a single PWM input. The IRS21064STRPBF is a 600 V high-side/low-side driver with independent high-side and low-side inputs and no internal deadtime (the designer must generate deadtime externally). Both share the same 8-SOIC pinout, so they are drop-in interchangeable at the layout level, but the control signal flow differs.

Engineering reference data for IRS2109STRPBF β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the IRS2109STRPBF when you need a half-bridge gate driver with a single PWM input and integrated fixed deadtime for 110/220 VAC-derived power topologies up to ~400 VDC bus. The 600 V high-side rating, 290/600 mA drive strength, and 540 ns deadtime make it a strong fit for BLDC motor drives, half-bridge SMPS, solar microinverters, and induction heating. For independent high/low-side control with programmable deadtime, select the IRS21064STRPBF (same SOIC-8 footprint). For sub-150 V bus systems, the IRS2008STRPBF offers a lower-cost alternative. If Infineon supply is constrained, the STMicroelectronics L6387E is a verified cross-brand drop-in replacement in the same 8-SOIC pinout. For new designs requiring tighter prop-delay matching, the IRS21091STRPBF is a pin-compatible updated revision.

Comparison with Alternatives

Parameter This Product IRS2109SPBF IRS21091STRPBF IRS21064STRPBF L6387E IRS2008STRPBF
Brand Infineon Infineon Infineon Infineon STMicroelectronics Infineon
Package 8-SOIC 8-SOIC (same) 8-SOIC (same) 8-SOIC (same) 8-SOIC (same) 8-SOIC (same)
Configuration Half-Bridge Half-Bridge Half-Bridge High/Low-side (independent inputs) Half-Bridge Half-Bridge
High-Side Voltage (VOffset) 600 V 600 V 600 V 600 V 600 V 200 V
Source Current (typ) 290 mA 290 mA 290 mA 290 mA 270 mA 290 mA
Sink Current (typ) 600 mA 600 mA 600 mA 600 mA 400 mA 600 mA
Propagation Delay (typ) 540 ns 540 ns 520 ns 680 ns 560 ns 540 ns
Internal Deadtime 540 ns (fixed) 540 ns (fixed) 540 ns (fixed) None (external) 540 ns (fixed) 540 ns (fixed)
Logic Inputs Single PWM input (HIN, LIN/SD) Single PWM input Single PWM input Independent HIN + LIN Single PWM input Single PWM input
Unit Price (1 pc, as of 2026-09-13) $1.72 $1.85 (approx) $1.95 (approx) $2.20 (approx) $1.40 (approx) $1.30 (approx)

Key Differentiators

  • Single-PWM-input half-bridge with integrated 540 ns deadtime (vs IRS21064STRPBF)
  • Verified cross-brand drop-in replacement path (vs L6387E (STMicroelectronics))
  • 600 V high-side rating covers 110/220 VAC-derived bus systems (vs IRS2008STRPBF)
  • Lower source current enables softer turn-on and lower EMI (vs IRS21091STRPBF)

Design Notes

Bootstrap capacitor sizing for IRS2109STRPBF: select CBOOT so that VBS remains above the UVLO threshold (typically 8-9 V) during the high-side on-time. For a 50 kHz half-bridge with 10% minimum duty cycle, CBOOT must supply Qg(total) + IC(quiescent) over the high-side on-time. Estimated: with Qg = 50 nC and IQBS = 50 uA, at 50 kHz with 2 us minimum on-time: CBOOT_min = (50 nC + 50 uA x 2 us) / (VBS_min_droop), giving at least 470 nF for 1 V droop margin. Use ceramic X7R or X5R rated to 25 V minimum. Place CBOOT physically close to the VBS and VS pins with wide traces to minimize parasitic inductance that would otherwise ring the bootstrap rail.

PCB layout for the IRS2109STRPBF half-bridge stage: keep the high-side HO-to-gate trace and the low-side LO-to-gate trace short and direct (< 25 mm), with no vias in series. Place the VCC bypass (>= 1 uF ceramic + 100 nF HF) within 5 mm of pin 1. The VS trace (switch node) must be wide to handle pulsed currents and should be surrounded by a ground pour to contain EMI. Separate the analog ground (pin 4 GND) from the power-stage ground; tie them together at a single point under the IC. The exposed pad on the SOIC-8 is internally connected to pin 4 GND and should be soldered to a 5x5 mm copper island for thermal relief.

Common pitfalls with the IRS2109STRPBF: (1) Do not leave VBS floating - the high-side will not turn on without a charged bootstrap capacitor and the part will appear 'dead'. (2) The high-side output HO will not respond to HIN until VBS rises above UVLO; allow sufficient startup time (typically 1-10 us depending on CBOOT and VCC). (3) The LIN/SD pin (pin 3) is a dual-function pin - in shutdown mode the low-side output is forced off; ensure firmware does not accidentally drive it low during normal operation. (4) The part has no internal deadtime hardware for HIN/LIN synchronization - the fixed deadtime is only between internal HO and LO; external anti-cross-conduction timing is the designer's responsibility when cascading multiple chips. (5) Do not exceed VCC of 20 V absolute maximum - transients above 22 V will damage the part.

Thermal management for the IRS2109STRPBF in 8-SOIC: the package dissipates ~0.5 W maximum (limited by the silicon and the package thermal resistance of theta_JA ~150 C/W on a standard JEDEC 4-layer PCB). At 1 W dissipation, junction temperature rises ~150 C above ambient, easily exceeding the 150 C absolute maximum junction rating. For high-frequency (> 100 kHz) applications with sustained switching, add a 10x10 mm copper island under the exposed pad to drop theta_JA to ~80 C/W. For applications above 50 kHz with large gate-charge MOSFETs (Qg > 100 nC), derate the part or upgrade to a larger package (IRS21091 with 8-DIP or IRS2113 in 14-SOIC).

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

Pb-free finish indicated by 'PBF' suffix per Infineon part numbering. RoHS compliance confirmed in distributor listings. AEC-Q100 qualification: not qualified in Infineon catalog; for AEC-Q100 qualified automotive half-bridge drivers, consider the IRS2003SPBF (AEC-Q100) in 8-SOIC. Halogen-free status not explicitly listed in distributor data.

Data verified on: 2026-09-13 β€” data verified and curated by XAIPART's component engineering team

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