MD7IC2050NBR1 - 10W W-CDMA RF Power Amplifier 1880-2100MHz | NXP
MPN: MD7IC2050NBR1 ✓ فعالMD7IC2050NBR1 جائزہ
An RF power amplifier (RF PA) is a critical component in the transmitter chain of wireless infrastructure equipment. Its role in the system hierarchy is: RF amplifier -> power amplifier -> RF front-end -> transceiver -> base station. RF PAs boost low-level modulated signals from the transceiver up to transmission power levels required by the antenna, while maintaining linearity, efficiency, and spectral mask compliance. LDMOS (laterally-diffused metal-oxide-semiconductor) has been the dominant RF power transistor technology for sub-3 GHz macrocell base stations due to its high power density, mature supply chain, and excellent ruggedness under mismatch.
Key features of the MD7IC2050NBR1 include on-chip matching for both input (50 ohm, DC blocked) and output (>5 ohm), integrated quiescent current temperature compensation with enable/disable function, integrated ESD protection, and series equivalent large-signal impedance parameters documented in the manufacturer datasheet. The integrated quiescent compensation eliminates external bias circuitry drift across temperature.
Technically, the device uses a multi-stage LDMOS architecture on a ceramic-thermal-path plastic package (CASE 1618-02). The TO-270 WB-14 footprint provides a low thermal resistance path for continuous 10 W average W-CDMA operation. According to the NXP datasheet, the part is characterized for both common-source S-parameters (for small-signal design) and large-signal impedance parameters (for output network matching at full power), enabling accurate harmonic-balance simulation in ADS or AWR.
Typical applications include W-CDMA / UMTS macrocell base stations, picocell and femtocell transmitters, repeaters, and 1880-2100 MHz band RF power stages in distributed antenna systems. The part is well suited for line replacement of legacy two-stage discrete PA designs.
When designing with the MD7IC2050NBR1, ensure adequate PCB thermal management - the 225C capable plastic package requires a proper solder footprint and heat-sinking copper area to keep junction temperature within derating limits under W-CDMA PAR of about 7-8 dB. The enable pin allows TDD or standby sequencing without cycling the 28 V rail.
This page synthesizes distributor pricing, drop-in same-brand variants (MD7IC2050NR1, MD7IC2050GNR1), and practical design considerations not found in the bare manufacturer datasheet.
کے لیے ڈراپ اِن متبادل MD7IC2050NBR1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں MD7IC2050NBR1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Mounting Type, Architecture, Manufacturer, Package / Case, RF Type.
MD7IC2050NR1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MD7IC2050GNR1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MW7IC2040NR1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MW7IC930NR1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MW6S004NT1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MD7IC2050NBR1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| RF Type | W-CDMA |
| Frequency Range | 1.88 GHz to 2.1 GHz |
| Operating Bandwidth (broader usability) | 1750 MHz to 2050 MHz |
| سپلائی وولٹیج | 28 V |
| Supply Current (quiescent) | 230 mA |
| Gain | 30.5 dB |
| Average Output Power (W-CDMA) | 10 W average |
| Architecture | Multi-stage RF LDMOS integrated power amplifier |
| Input Matching | On-chip, 50 ohm, DC blocked |
| Output Matching | On-chip, >5 ohm nominal |
| Enable / Disable | Integrated (with quiescent current temperature compensation) |
| ESD Protection | Integrated |
| پیکیج | TO-272 WB-14 (CASE 1618-02, plastic overmold) |
| Maximum Junction / Package Temperature | 225 C capable plastic |
| RoHS Compliance | Compliant (per manufacturer datasheet) |
| ماؤنٹنگ ٹائپ | Surface Mount (flanged lead) |
MD7IC2050NBR1 پن کنفیگریشن
| پن 1 | RFIN — RF input (50 ohm, DC blocked on-chip) |
| پن 2 | GND — Ground / flange |
| پن 3 | GND — Ground / flange |
| پن 4 | GND — Ground / flange |
| پن 5 | VGG / Bias — Gate bias supply (with on-chip temp compensation) |
| پن 6 | GND — Ground / flange |
| پن 7 | GND — Ground / flange |
| پن 8 | VDD1 — Drain supply, stage 1 (28 V) |
| پن 9 | GND — Ground / flange |
| پن 10 | GND — Ground / flange |
| پن 11 | VDD2 — Drain supply, stage 2 (28 V) |
| پن 12 | GND — Ground / flange |
| پن 13 | EN — Enable / disable (with quiescent temp compensation) |
| پن 14 | RFOUT — RF output (>5 ohm, on-chip matched) |
محفوظ آپریٹنگ ایریا (LDMOS Drain)
عام استعمالات
MD7IC2050NBR1 کے لیے موزوں ہے 6 ایپلیکیشنs: W-CDMA Macrocell Base Station PA, UMTS / 3G Picocell Transmitter, Cellular Repeater / DAS Power Stage, 1880-2050 MHz Multi-Band PA Line-up, RF Power Stage for Test & Measurement, Industrial / Aerospace Telemetry PA.
W-CDMA Macrocell Base Station PA
The MD7IC2050NBR1 is purpose-built for 1.88-2.1 GHz W-CDMA macrocell base-station final-stage PAs, delivering 10 W average output with 30.5 dB gain from a 28 V rail. Its integrated on-chip input matching (50 ohm, DC blocked) and >5 ohm output matching eliminate the discrete LC networks of legacy two-stage designs, simplifying the PA line-card layout. Per NXP, the integrated quiescent temperature compensation keeps bias stable across the -40 C to +85 C base-station ambient range without external thermistor networks. Compared with discrete LDMOS line-ups, this part reduces PCB area by 30-50% and BOM count while maintaining the linearity needed for adjacent-channel leakage ratio (ACLR) compliance in UMTS.
تجویز کردہ
UMTS / 3G Picocell Transmitter
For picocell and small-cell 3G transmitters, the MD7IC2050NBR1's 10 W average output with 30.5 dB gain is well matched to the +33 to +40 dBm typical picocell downlink power budget. The integrated enable/disable pin allows fast standby / sleep sequencing required by picocell energy-saving standards without cycling the 28 V rail. Per NXP, the on-chip ESD protection simplifies IEC 61000-4-2 compliance at the antenna port, and the >5 ohm output impedance allows a compact microstrip output network in the small-form-factor picocell chassis. The TO-272 WB-14 footprint enables single-sided PCB layouts with backside copper heat-spreading, ideal for the compact thermal envelope of an outdoor picocell radio head.
تجویز کردہ
Cellular Repeater / DAS Power Stage
Distributed antenna systems (DAS) and cellular repeaters for in-building coverage often require a robust 1.9-2.1 GHz PA stage. The MD7IC2050NBR1's 30.5 dB gain and 10 W average W-CDMA output satisfy the typical -33 dBm input to +40 dBm output power budget of a single-cell DAS remote unit. Per the NXP datasheet, the multi-stage internal architecture provides high reverse isolation, easing stability concerns when the PA is cascaded with bandpass filters and attenuators. The 225 C capable plastic package tolerates the enclosed, poorly cooled DAS enclosure environment. Compared with hybrid MIC PA modules, this integrated approach reduces tuning labor in volume manufacturing.
تجویز کردہ
1880-2050 MHz Multi-Band PA Line-up
Although characterized at 1.88-2.1 GHz, the MD7IC2050NBR1 is usable from 1750-2050 MHz per NXP, allowing it to cover DCS-1800 and AWS-1 with a retuned output matching network. Designers building a multi-band PA line-up for global UMTS / LTE bands 1, 2, 4 can use a single PCB layout with band-selectable output filters. Per NXP, the >5 ohm output impedance is broadband enough to support a tunable matching network across 1750-2050 MHz. This reduces SKU count and qualification cost versus maintaining separate PA line-ups for each band.
تجویز کردہ
RF Power Stage for Test & Measurement
Test and measurement setups for UMTS handset conformance and base-station conformance need a stable, repeatable 1.9-2.1 GHz power source at the 10 W average level. The MD7IC2050NBR1's well-characterized large-signal impedance parameters and common-source S-parameters, documented in the NXP datasheet, allow precise harmonic-balance and load-pull simulation - critical for system test engineers building reference stimulus sources. The integrated on-chip matching eliminates the variable of external LC tuning, improving measurement repeatability between test fixtures. The 28 V single-supply operation simplifies lab bench wiring versus higher-voltage discrete LDMOS parts.
تجویز کردہ
Industrial / Aerospace Telemetry PA
Non-cellular telemetry and aerospace data links in the 1.9-2.1 GHz band benefit from the MD7IC2050NBR1's ruggedness and wide temperature tolerance. Per NXP, the 225 C capable plastic package and integrated ESD protection suit airborne and industrial environments where vibration and ESD exposure are concerns. The 30.5 dB gain eliminates a driver stage, reducing payload weight in UAV / aerospace telemetry applications. Compared with hybrid MIC amplifier modules, this monolithic integrated PA delivers better gain flatness and lower part-to-part variation in production telemetry transceivers.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا MD7IC2050NBR1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | MD7IC2050NR1 | MD7IC2050GNR1 | MW7IC2040NR1 | MW7IC930NR1 | MW6S004NT1 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-14 (CASE 1618-02) | TO-272 WB-14 - same | TO-272 WB-14 - same | TO-272 WB-14 family - same land pattern | TO-272 WB-14 family - same land pattern | TO-272 WB-14 family - same land pattern |
| Supply Voltage | 28 V | 28 V - same | 28 V - same | 28 V | 28 V | 28 V |
| Enable / Disable | Integrated (with quiescent temp comp) | Integrated - same | Integrated - same | Integrated (NXP 7-series) | Integrated (NXP 7-series) | Integrated (NXP 6-series) |
| On-Chip Input Matching (50 ohm, DC blocked) | Yes | Yes - same | Yes - same | Yes (NXP 7-series) | Yes (NXP 7-series) | Yes (NXP 6-series) |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
اہم امتیازی خصوصیات
- Fully integrated on-chip matching (50 ohm input, >5 ohm output) (بمقابلہMW7IC2040NR1)
- Integrated quiescent current temperature compensation (بمقابلہMW6S004NT1)
- 30.5 dB gain in a single multi-stage package (بمقابلہMW7IC930NR1)
- 10 W average W-CDMA output in plastic 225 C package (بمقابلہMD7IC2050GNR1)
ڈیزائن نوٹس
Estimated: At 10 W average W-CDMA output with PAR ~7-8 dB and a 35% PA drain efficiency typical for this class, the device dissipates approximately 18-20 W of heat. The CASE 1618-02 package should be soldered to a copper heat-spreader area of at least 10 cm x 10 cm with thermal vias to the inner / opposite-side ground plane; without this the junction temperature will exceed the 225 C package rating under continuous W-CDMA. Use a thin layer of thermal compound if mounted to an external heatsink.
Lay out the 50 ohm input microstrip directly to the RFIN pin using a controlled-impedance trace on the top layer with continuous ground beneath. Keep the >5 ohm output network trace as short as practical to minimize microstrip dispersion; per NXP the output network should be tuned with the large-signal impedance parameters (not the small-signal S-parameters) provided in the datasheet for accurate harmonic-balance simulation. Place gate-bias decoupling capacitors as close to the VGG pin as possible to prevent low-frequency oscillation.
Do not exceed 32 V on the drain supply (per datasheet) - operation above 32 V without proper derating can cause catastrophic LDMOS failure. The enable pin must be driven logic-low for proper shutdown; leaving it floating can cause the part to draw excessive quiescent current or fail to bias correctly. Avoid routing digital control lines near the RF output trace - the high-output power can couple into the EN line and cause spurious turn-on. Always verify the bias sequencing (VGG before VDD) during board bring-up to prevent in-rush current damage.
Use multiple bond-side ground vias around the package center-bar to provide a low-inductance RF return for both input and output networks. Stitch the top-layer ground with vias on a 2-3 mm pitch around the entire RF path to suppress parallel-plate mode resonances. Per NXP application notes, keep all bias-rail ferrite beads at least 5 mm away from the RF output trace to prevent 2nd-harmonic energy loss into the bias network.
تعمیل کی معلومات
RoHS compliance per NXP datasheet (MD7IC2050N family datasheet). Reach compliance typical for NXP plastic overmold packages. AEC-Q100 not applicable - this is an RF power amplifier, not an automotive-qualified IC. Lead-free per NXP RoHS statement. Halogen-free status not explicitly stated in the datasheet - set to unknown.
