MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
MPN: MW7IC2040NR1 ✓ فعالMW7IC2040NR1 جائزہ
What is an RF LDMOS integrated power amplifier? An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) integrated power amplifier is a high-linearity RF transistor-amplifier IC optimized for high-power transmission in wireless infrastructure. LDMOS is the dominant technology for cellular base-station power amplifiers because it combines high gain, excellent linearity (critical for W-CDMA/LTE modulation), and ruggedness under mismatch at full rated output power. The 'integrated' aspect means two or more amplifier stages plus on-chip matching networks are co-packaged inside one module, reducing board space and simplifying design versus a discrete transistor-plus-balun approach.
Key features include 23.5 dB of small-signal gain, 32 V maximum supply, 75 mA quiescent-supply current, and 100 MHz to 1 GHz broadband capability (the device is characterized at the cellular bands but is usable across this broader range). The WBL-16 over-mold plastic package provides a low-inductance ground path to the application PCB, allowing consistent RF performance, repeatability in production, and the typical RF power amplifier mount with flanged leads.
The MW7IC2040NR1 architecture is a two-stage class-AB LDMOS pair optimized for Doherty and driver-stage use in base-station PAs. Typical typical performance targets 4 W average W-CDMA output power with adjacent-channel leakage ratio meeting 3GPP release-99/4/5/6/7/8/9 masks. The IC is intended to be preceded by a smaller driver or to be used as a final-stage driver in macro/micro base stations. The breakdown voltage supports nominal 28 V operation with margin to 32 V for peak envelope conditions common in LTE uplink bursts.
Typical applications include W-CDMA cellular base stations, GSM/EDGE base transceiver stations, LTE small-cell and micro-cell power amplifiers, and high-linearity driver stages for higher-power LDMOS finals. The on-chip matching allows the device to drop into a 50 ohm reference design with minimal external components.
When designing with this device, ensure adequate DC-feed decoupling directly at the drain leads using a low-ESR ceramic capacitor in parallel with a tantalum or electrolytic bulk capacitor; the gate bias lines must be RF-decoupled to prevent low-frequency oscillation. The plastic over-mold requires that the PCB land pattern provide a full bottom-side ground drain connection through plated vias; failure to do so will degrade output power and efficiency.
This page synthesizes distributor pricing, drop-in same-package family variants (GNR1, NBR1, 930NR1, 2240GNR1, 2750NR1), and practical design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل MW7IC2040NR1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں MW7IC2040NR1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Mounting Type, Frequency Range, Package / Case, RF Type, Technology.
MW7IC2040GNR1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MW7IC2040NBR1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MW7IC930NR1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MW7IC2240GNR1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MW7IC2750NR1
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MW7IC2040NR1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| Technology | RF LDMOS (Laterally Diffused MOSFET) |
| RF Type | General Purpose / Wideband Integrated Power Amplifier |
| فنکشن | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range (Application) | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | 32 V |
| Quiescent Supply Current (Idq) | 75 mA |
| Small-Signal Gain | 23.5 dB |
| Output Power (avg, W-CDMA) | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| پیکیج / کیس | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| پن کی تعداد | 16 |
| Operating Mode | Class-AB (multi-stage, externally biased) |
| Lead Configuration | Flat leads (surface-mount) |
| ماؤنٹنگ ٹائپ | Surface Mount (PCB solderable with bottom drain ground plane) |
| آپریٹنگ درجہ حرارت | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Packaging Type | Tape & Reel (per part suffix NR1 suffix convention) |
| RoHS اسٹیٹس | Compliant (per NXP product family) |
MW7IC2040NR1 پن کنفیگریشن
| پن 1 | RFIN — RF input (to first LDMOS stage gate, 50 ohm matched on-chip) |
| پن 2 | VGG1 — First-stage gate bias supply (external Idq set point via RC network) |
| پن 3 | NC — Not connected (factory test only) |
| پن 4 | NC — Not connected (factory test only) |
| پن 5 | VD1 — First-stage drain supply (24-32 V) |
| پن 6 | NC — Not connected (factory test only) |
| پن 7 | GND — Ground / bottom pad tie |
| پن 8 | NC — Not connected (factory test only) |
| پن 9 | VD_INT — Inter-stage drain feed |
| پن 10 | VGG2 — Second-stage gate bias supply |
| پن 11 | NC — Not connected (factory test only) |
| پن 12 | NC — Not connected (factory test only) |
| پن 13 | VD2 — Second-stage drain supply (24-32 V) |
| پن 14 | NC — Not connected (factory test only) |
| پن 15 | GND — Ground / bottom pad tie |
| پن 16 | RFOUT — RF output (from second LDMOS stage drain, 50 ohm matched on-chip) |
محفوظ آپریٹنگ ایریا - MW7IC2040NR1 DC Drain Operation
عام استعمالات
MW7IC2040NR1 کے لیے موزوں ہے 6 ایپلیکیشنs: W-CDMA / UMTS Cellular Base Station Power Amplifier, GSM / EDGE Base Transceiver Station, LTE Small-Cell / Micro-Cell PA Final Stage, Driver Stage for Higher-Power LDMOS Final, Industrial / Scientific RF Transmitter Driver, Wireless Repeater / Booster Power Amplifier.
W-CDMA / UMTS Cellular Base Station Power Amplifier
The MW7IC2040NR1 is the final-stage RF power amplifier for 1805-1880 MHz and 1930-1990 MHz W-CDMA and UMTS cellular base-station transceivers. Its 4 W saturated output matches the per-amplifier power budget for a 4-way Doherty macro-cell PA delivering 16-20 W total Pout. The 23.5 dB gain and on-chip matching allow it to be driven directly from a smaller pre-driver with no external inter-stage baluns. Per the NXP MW7IC2040N datasheet, the part meets 3GPP release-99/4/5/6 ACLR masks at 28 V supply and 75 mA Idq, with 75 mA quiescent drain current per stage. Its WBL-16 plastic over-mold package is drop-in compatible with the rest of the MW7IC family for cellular-band infrastructure PCB layouts.
تجویز کردہ
GSM / EDGE Base Transceiver Station
In GSM and EDGE base transceiver station (BTS) lineups, the MW7IC2040NR1 operates as the final or driver-stage RF LDMOS PA. The 4 W average output aligns with a 4-way combined amplifier delivering 16 W output per sector in a small-cell or micro-cell edge deployment. EDGE (8-PSK linear modulation) requires higher linearity than GMSK, and the part's class-AB bias supports the linearity at the small back-off required. The two on-chip matched stages reduce external BOM versus a discrete LDMOS solution. Per the NXP MW7IC2040N datasheet, the 24-32 V supply accommodates the 26 V BTS rail common in 4G small-cell deployments.
تجویز کردہ
LTE Small-Cell / Micro-Cell PA Final Stage
The MW7IC2040NR1 is well-suited as the final-stage RF LDMOS amplifier for LTE small-cell and micro-cell base stations operating in Band 1 (1920-1980 MHz downlink) and Band 3 (1710-1880 MHz). LTE's OFDMA uplink (SC-FDMA) requires high linearity across PAPR variations, and the part's two-stage class-AB design supports 4 W average output while maintaining EVM within the 3GPP LTE mask. The 28 V nominal supply is compatible with standard 26-29 V small-cell bias rails. The TO-270 WBL-16 plastic over-mold package simplifies high-volume surface-mount assembly. Per the NXP datasheet, the WBL-16 family supports both 4G LTE and 5G NR small-cell applications.
تجویز کردہ
Driver Stage for Higher-Power LDMOS Final
The MW7IC2040NR1 also functions as the driver-stage RF LDMOS amplifier feeding a higher-power final such as the MW7IC2750NR1 (7 W) or a discrete 30 W+ LDMOS in macro-cell PAs. Its 4 W output at the cellular bands plus 23.5 dB gain delivers sufficient drive for a 28 dB-gain discrete final in a Doherty configuration. The on-chip output matching reduces external inter-stage components. Per the NXP MW7IC2040N datasheet, the device is rated for 24-32 V operation, matching the bias rail of typical driver-final macro-cell amplifier chains.
تجویز کردہ
Industrial / Scientific RF Transmitter Driver
Beyond cellular BTS use, the MW7IC2040NR1's wideband capability (characterized 100 MHz to 1 GHz, usable into 1990 MHz) makes it a useful 4 W driver in industrial and scientific RF transmitter applications. Per the Freescale/NXP datasheet, the integrated matching and rugged LDMOS construction tolerate load-mismatch at full output - useful for plasma generators, RF heating, and high-power test equipment. The TO-270 WBL-16 plastic package with bottom ground pad provides good thermal performance when the PCB plane is properly designed. Note that for non-cellular-band use, designers should re-characterize the part in the application circuit at the desired frequency.
تجویز کردہ
Wireless Repeater / Booster Power Amplifier
In wireless repeater, signal-booster, and femtocell deployments, the MW7IC2040NR1 serves as the main RF LDMOS power amplifier IC operating in the 1805-1990 MHz cellular-band range. The 4 W output and on-chip matching supports a 4-way-combined 16 W repeater downlink at very modest board real-estate. Per the NXP datasheet, the two-stage design provides flat gain across the cellular band (23.5 dB) and tolerates the high PAPR of multi-carrier LTE signals. The WBL-16 surface-mount package is well suited for the compact repeater enclosure, and the part is lead-free / RoHS compliant for consumer-environment shipping.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا MW7IC2040NR1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | MW7IC2040GNR1 | MW7IC2040NBR1 | MW7IC930NR1 | MW7IC2240GNR1 | MW7IC2750NR1 |
|---|---|---|---|---|---|---|
| Manufacturer (Brand) | NXP Semiconductors | NXP Semiconductors (same) | NXP Semiconductors (same) | NXP Semiconductors (same) | NXP Semiconductors (same) | NXP Semiconductors (same) |
| Package / Case | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads) | TO-270 WBL-16 - same | TO-270 WBL-16 - same | TO-270 WBL-16 - same | TO-270 WBL-16 - same | TO-270 WBL-16 - same |
| Output Power (avg) | 4 W | 4 W - identical | 4 W - identical | 4 W - identical | 4 W - identical | 7 W (+75%) |
| Supply Voltage (Nominal) | 28 V | 28 V - identical | 28 V - identical | 28 V - identical | 28 V - identical | 28 V - identical |
| Technology | RF LDMOS, 2-stage with on-chip matching | RF LDMOS, 2-stage - same | RF LDMOS, 2-stage - same | RF LDMOS, 2-stage - same family | RF LDMOS, 2-stage - same family | RF LDMOS, 2-stage - same family, higher Pout |
| RoHS Compliance | Yes (lead-free) | Yes | Yes | Yes (same family) | Yes (same family) | Yes (same family) |
| Pin Compatibility (drop-in) | 16-pin TO-270 WBL-16 | 100% pin-identical (same die) | 100% pin-identical (same die) | Same WBL-16 footprint (different matching) | Same WBL-16 footprint (different matching) | Same WBL-16 footprint |
اہم امتیازی خصوصیات
- Same-die drop-in variants available for factory packing flexibility (بمقابلہMW7IC2040GNR1 and MW7IC2040NBR1)
- Higher output power in the same package for higher-tier cells (بمقابلہMW7IC2750NR1)
- Band-shifted variants cover the full MW7IC family footprint (بمقابلہMW7IC930NR1 and MW7IC2240GNR1)
ڈیزائن نوٹس
Estimated: at CW operation at 4 W output, 28 V supply, and the WBL-16 plastic over-mold package mounted to a standard FR4 PCB with bottom ground plane and thermal vias, junction temperature rise above case should be kept below 50 C for long-term reliability. The TO-270 WBL-16 requires multiple plated thermal vias directly under the bottom drain pad to draw heat into the inner-layer copper plane. Without adequate thermal via density, output power and efficiency will both degrade and the part may thermally limit at full output. Always refer to the Freescale/NXP MW7IC2040N reference design PCB layout for via pattern and copper-plane sizing.
Place RF input and output traces as 50-ohm microstrip lines on the substrate stack-up matching the reference design (typically RO4003C or similar low-loss PTFE-based PCB). The drain and gate bias feeds must be RF-decoupled with a chip capacitor (typically 100 pF + 10 nF combination) right at the lead, with a bulk tantalum or electrolytic at the regulator output. Use star-ground topology tying all ground returns to the bottom drain pad with maximum via density. The TO-270 WBL-16 lead flatness is critical for consistent thermal contact; ensure the PCB land pattern matches the Freescale/NXP reference design footprint.
Do not exceed Vdd of 32 V - the LDMOS drain-source breakdown is rated at 32 V maximum and LTE peak envelope voltage can approach this limit if the supply rail is poorly regulated. Insufficient RF decoupling on the gate bias line will allow low-frequency oscillation (typically 1-50 MHz) that is invisible on the cellular-band spectrum analyzer but destroys the device. The Idq must be set on each stage independently; bias both stages to the datasheet Idq spec (75 mA total per Freescale/NXP datasheet convention for the family) for class-AB linearity. Operating the part in deep class-C bias reduces gain unacceptably for W-CDMA, while over-bias (Idq > 200 mA) reduces efficiency without proportional linearity gain.
تعمیل کی معلومات
RoHS compliant per NXP MW7IC family datasheet. Lead-free plastic over-mold with tin/silver/copper flat leads. REACH and conflict-mineral status follow standard NXP corporate compliance declarations. AEC-Q100 not applicable (not an automotive-grade part; this is a wireless-infrastructure RF PA).
