MD7P19130HR3 - 40W, 1990 MHz RF Power LDMOS | NXP
MPN: MD7P19130HR3 ✓ فعالMD7P19130HR3 جائزہ
A RF power MOSFET (also called RF power LDMOS transistor) is a lateral double-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power RF amplification. Within the amplifier hierarchy, RF power MOSFETs sit below GaN HEMTs and SiC MESFETs in raw power density per unit area, but offer the best cost-per-watt in sub-3 GHz macro/micro base-station transmitters. They integrate into Doherty, push-pull, and class-AB final stages where 30-50 V operation and high saturated drain current are required.
Key performance highlights include a 28 V typical drain supply, an IDQ of 1250 mA quiescent bias, a frequency coverage of 1930 MHz to 1990 MHz (the entire 3GPP Band 1 / PCS downlink), 20 dB typical power gain, and 30% drain efficiency at rated Pout. The lateral N-channel enhancement-mode process is built on NXP's seventh-generation Airfast platform, which improves thermal resistance compared to older NI-780 variants.
Typical applications include 3GPP Band 1 (IMT-2000 / PCS) macro base stations, micro/pico-cell W-CDMA power amplifiers, multi-carrier UMTS final stages, and broadband 1.8-2.0 GHz industrial transmitters. Designers favor this part for its integrated ESD protection and broadband matching stability across the full PCS uplink and downlink sub-bands.
When designing with this device, ensure the heatsink spreader holds the case flange below 200 C with adequate airflow; the ceramic NI-780-4 flange is the primary thermal path and a minimum 4 oz copper footprint under the lead frame is required for proper RF grounding.
کے لیے ڈراپ اِن متبادل MD7P19130HR3 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں MD7P19130HR3 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Drain Efficiency, Frequency Range, Input Signal PAR, Mounting Type, Package / Case.
MRF8S19140HR3
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MD7P19130HSR3
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF8P19080HR3
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MD7P19130HR3 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| ٹرانزسٹر کی قسم | LDMOS (Dual), N-Channel Enhancement-Mode Lateral |
| Frequency Range | 1.93 GHz to 1.99 GHz |
| Typical Drain Voltage (VDD) | 28 V |
| Drain Voltage - Rated | 65 V |
| Quiescent Drain Current (IDQ) | 1250 mA |
| Output Power (Avg, W-CDMA) | 40 W |
| Power Gain | 20 dB (typical at Pout = 40 W) |
| Drain Efficiency | 30% (typical at Pout = 40 W, W-CDMA) |
| ACPR | -36 dBc at 5 MHz offset (3.84 MHz channel) |
| Input Signal PAR | 7.5 dB at 0.01% CCDF |
| Output Signal PAR | 6 dB at 0.01% CCDF |
| پیکیج / کیس | NI-780-4 (Case 465M-01, Style 1), ceramic flange |
| ماؤنٹنگ ٹائپ | Surface Mount (bolt-down flange) |
| Technology | Airfast LDMOS, lateral N-channel |
MD7P19130HR3 پن کنفیگریشن
| پن 1 | Drain — RF output / drain terminal (matched to 50 ohm) |
| پن 2 | Gate — RF input / gate terminal (matched to 50 ohm) |
| پن 3 | Source / Flange — DC ground and thermal path through the ceramic flange |
MD7P19130HR3 DC محفوظ آپریٹنگ ایریا
عام استعمالات
MD7P19130HR3 کے لیے موزوں ہے 6 ایپلیکیشنs: 3GPP Band 1 W-CDMA Macro Base Station Final Stage, Doherty Power Amplifier for Cellular Infrastructure, Micro / Pico Cell W-CDMA Power Amplifiers, LTE Band 1 / 5G NR n1 Small-Cell Transmitter, Industrial / Scientific RF Transmitters in 1.9 GHz Band, Multi-Carrier UMTS Final-Stage Driver.
3GPP Band 1 W-CDMA Macro Base Station Final Stage
The MD7P19130HR3 is a primary fit for the final-stage power amplifier in 1930-1990 MHz 3GPP Band 1 macro base stations. With 28 V operation, 40 W average output, 20 dB power gain, and 30% drain efficiency under single-carrier W-CDMA with 7.5 dB PAR, it provides the power density and spectral cleanliness required for UMTS release-99 ACPR masks. The lateral N-channel enhancement-mode structure enables class-AB biasing with thermal stability across the full Band 1 downlink.
تجویز کردہ
Doherty Power Amplifier for Cellular Infrastructure
In a two-way Doherty PA the MD7P19130HR3 can serve as both the carrier and peaking device because of its consistent gain profile across the 1930-1990 MHz Band 1 range. The -36 dBc ACPR at 5 MHz offset and 6 dB output PAR at the 0.01% CCDF point give linearizable headroom for digital pre-distortion. Designers pair the device with a 90-degree quadrature coupler and a 28 V drain modulator to extract the back-off efficiency benefits of the Doherty topology.
تجویز کردہ
Micro / Pico Cell W-CDMA Power Amplifiers
Smaller-cell deployments that use 40 W average-output transistors in single-ended or push-pull configurations also target the MD7P19130HR3. The NI-780-4 ceramic case provides a robust thermal interface for confined micro-cell enclosures, while the 20 dB power gain simplifies the upstream driver chain. Drain efficiency at 30% keeps power consumption within the limited micro-cell thermal envelope, even at maximum output.
تجویز کردہ
LTE Band 1 / 5G NR n1 Small-Cell Transmitter
Although characterized primarily for W-CDMA, the MD7P19130HR3's 1930-1990 MHz passband, 28 V rail, and 40 W average output lend themselves to LTE Band 1 and 5G NR n1 small-cell transmitters where the modulation PAR is comparable. The -36 dBc ACPR at 5 MHz offset meets LTE release-8 spectral mask requirements when combined with DPD linearization. n1 carrier aggregation demands careful gain and efficiency validation but is workable with this device in lower-bandwidth small cells.
تجویز کردہ
Industrial / Scientific RF Transmitters in 1.9 GHz Band
Industrial, scientific, and medical RF equipment that operates in the unlicensed or lightly-regulated portions around 1.9 GHz can use the MD7P19130HR3 as a high-power final-stage amplifier. Its 28 V operation and 65 V drain rating give the headroom needed for continuous-duty industrial RF generators. The package's bolt-down flange simplifies chassis-mount integration, where reliable thermal contact is critical for round-the-clock operation.
تجویز کردہ
Multi-Carrier UMTS Final-Stage Driver
Multi-carrier UMTS transmitter designs that combine several W-CDMA carriers onto a single final stage also see the MD7P19130HR3 used as a workhorse. Its 40 W average capability at 30% drain efficiency delivers competitive cost-per-watt, while the lateral N-channel enhancement-mode process scales cleanly across the full Band 1 downlink. Properly designed output matching preserves linearity across the multi-carrier CCDF envelope.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا MD7P19130HR3 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | MRF8S19140HR3 | MD7P19130HSR3 | MRF8P19080HR3 |
|---|---|---|---|---|
| Package | NI-780-4 (Case 465M-01, Style 1) | NI-780-4 - same | NI-780-4 - same | NI-780-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1805-1920 MHz |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V |
| Output Power (W-CDMA Avg) | 40 W | 40 W | 40 W | 8 W |
| Power Gain | 20 dB | 17.5 dB | 20 dB | 15 dB |
| Drain Efficiency | 30% | 32% | 30% | 27% |
| Transistor Type | LDMOS (N-Channel) | LDMOS (N-Channel) | LDMOS (N-Channel) | LDMOS (N-Channel) |
اہم امتیازی خصوصیات
- Tuned specifically for the 1930-1990 MHz Band 1 downlink (بمقابلہMRF8P19080HR3)
- 30% drain efficiency at 40 W W-CDMA with -36 dBc ACPR (بمقابلہMRF8S19140HR3)
ڈیزائن نوٹس
Estimated: At 40 W W-CDMA Pout with 30% drain efficiency, the device dissipates roughly 93 W continuously. The NI-780-4 ceramic flange is the primary thermal path; use a thermal interface material rated at <=0.5 C/W to keep the junction below the published 200 C limit. Mounting torque to the heatsink should follow the datasheet mechanical drawing, and the PCB copper under the flange should be at least 4 oz for RF grounding and heat spreading.
RF input and output traces must be 50 ohm controlled-impedance microstrip on a low-loss substrate such as Rogers RO4350B or Arlon AD255C. Keep the gate and drain bond leads short; the gate bond-wire inductance directly impacts gain at 1.99 GHz, so place the input matching network within a few millimeters of the gate pad. Stitching vias around the substrate edges help suppress parallel-plate modes that can degrade efficiency.
Do not exceed the 65 V drain-voltage rating, even under transient load-pull or output VSWR mismatch. Input drive should be limited to keep the gate below the turn-on threshold during turn-off transients. Bias sequencing matters: bias the gate to its quiescent point before ramping VDD, and gate-off first when shutting down. Without proper sequencing the device can experience avalanche breakdown at the gate-drain overlap region.
تعمیل کی معلومات
RoHS / REACH / lead-free status was not present in the verified data set and should be confirmed from the NXP material declaration or latest datasheet revision. Part is a base-station power transistor (not AEC-Q100).
