MD7P19130HR3 - 40W, 1990 MHz RF Power LDMOS | NXP
MPN: MD7P19130HR3 ✓ Hoạt độngMD7P19130HR3 Tóm tắt
A RF power MOSFET (also called RF power LDMOS transistor) is a lateral double-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power RF amplification. Within the amplifier hierarchy, RF power MOSFETs sit below GaN HEMTs and SiC MESFETs in raw power density per unit area, but offer the best cost-per-watt in sub-3 GHz macro/micro base-station transmitters. They integrate into Doherty, push-pull, and class-AB final stages where 30-50 V operation and high saturated drain current are required.
Key performance highlights include a 28 V typical drain supply, an IDQ of 1250 mA quiescent bias, a frequency coverage of 1930 MHz to 1990 MHz (the entire 3GPP Band 1 / PCS downlink), 20 dB typical power gain, and 30% drain efficiency at rated Pout. The lateral N-channel enhancement-mode process is built on NXP's seventh-generation Airfast platform, which improves thermal resistance compared to older NI-780 variants.
Typical applications include 3GPP Band 1 (IMT-2000 / PCS) macro base stations, micro/pico-cell W-CDMA power amplifiers, multi-carrier UMTS final stages, and broadband 1.8-2.0 GHz industrial transmitters. Designers favor this part for its integrated ESD protection and broadband matching stability across the full PCS uplink and downlink sub-bands.
When designing with this device, ensure the heatsink spreader holds the case flange below 200 C with adequate airflow; the ceramic NI-780-4 flange is the primary thermal path and a minimum 4 oz copper footprint under the lead frame is required for proper RF grounding.
Bộ thay thế dễ dàng lắp đặt cho MD7P19130HR3 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với MD7P19130HR3 (cùng hình factor và footprint) — khác nhau ở Drain Efficiency, Frequency Range, Input Signal PAR, Mounting Type, Package / Case.
MRF8S19140HR3
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
MD7P19130HSR3
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →MRF8P19080HR3
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
MD7P19130HR3 Tỷ lệ tối đa & tính chất điện
| Kiểu transitor | LDMOS (Dual), N-Channel Enhancement-Mode Lateral |
| Frequency Range | 1.93 GHz to 1.99 GHz |
| Typical Drain Voltage (VDD) | 28 V |
| Drain Voltage - Rated | 65 V |
| Quiescent Drain Current (IDQ) | 1250 mA |
| Output Power (Avg, W-CDMA) | 40 W |
| Power Gain | 20 dB (typical at Pout = 40 W) |
| Drain Efficiency | 30% (typical at Pout = 40 W, W-CDMA) |
| ACPR | -36 dBc at 5 MHz offset (3.84 MHz channel) |
| Input Signal PAR | 7.5 dB at 0.01% CCDF |
| Output Signal PAR | 6 dB at 0.01% CCDF |
| Hộp / Vỏ | NI-780-4 (Case 465M-01, Style 1), ceramic flange |
| Kiểu lắp đặt | Surface Mount (bolt-down flange) |
| Technology | Airfast LDMOS, lateral N-channel |
Cấu hình chân MD7P19130HR3
| Chân 1 | Drain — RF output / drain terminal (matched to 50 ohm) |
| Chân 2 | Gate — RF input / gate terminal (matched to 50 ohm) |
| Chân 3 | Source / Flange — DC ground and thermal path through the ceramic flange |
MD7P19130HR3 DC Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
MD7P19130HR3 phù hợp cho 6 Áp dụngs: 3GPP Band 1 W-CDMA Macro Base Station Final Stage, Doherty Power Amplifier for Cellular Infrastructure, Micro / Pico Cell W-CDMA Power Amplifiers, LTE Band 1 / 5G NR n1 Small-Cell Transmitter, Industrial / Scientific RF Transmitters in 1.9 GHz Band, Multi-Carrier UMTS Final-Stage Driver.
3GPP Band 1 W-CDMA Macro Base Station Final Stage
The MD7P19130HR3 is a primary fit for the final-stage power amplifier in 1930-1990 MHz 3GPP Band 1 macro base stations. With 28 V operation, 40 W average output, 20 dB power gain, and 30% drain efficiency under single-carrier W-CDMA with 7.5 dB PAR, it provides the power density and spectral cleanliness required for UMTS release-99 ACPR masks. The lateral N-channel enhancement-mode structure enables class-AB biasing with thermal stability across the full Band 1 downlink.
Được đề xuất
Doherty Power Amplifier for Cellular Infrastructure
In a two-way Doherty PA the MD7P19130HR3 can serve as both the carrier and peaking device because of its consistent gain profile across the 1930-1990 MHz Band 1 range. The -36 dBc ACPR at 5 MHz offset and 6 dB output PAR at the 0.01% CCDF point give linearizable headroom for digital pre-distortion. Designers pair the device with a 90-degree quadrature coupler and a 28 V drain modulator to extract the back-off efficiency benefits of the Doherty topology.
Được đề xuất
Micro / Pico Cell W-CDMA Power Amplifiers
Smaller-cell deployments that use 40 W average-output transistors in single-ended or push-pull configurations also target the MD7P19130HR3. The NI-780-4 ceramic case provides a robust thermal interface for confined micro-cell enclosures, while the 20 dB power gain simplifies the upstream driver chain. Drain efficiency at 30% keeps power consumption within the limited micro-cell thermal envelope, even at maximum output.
Được đề xuất
LTE Band 1 / 5G NR n1 Small-Cell Transmitter
Although characterized primarily for W-CDMA, the MD7P19130HR3's 1930-1990 MHz passband, 28 V rail, and 40 W average output lend themselves to LTE Band 1 and 5G NR n1 small-cell transmitters where the modulation PAR is comparable. The -36 dBc ACPR at 5 MHz offset meets LTE release-8 spectral mask requirements when combined with DPD linearization. n1 carrier aggregation demands careful gain and efficiency validation but is workable with this device in lower-bandwidth small cells.
Được đề xuất
Industrial / Scientific RF Transmitters in 1.9 GHz Band
Industrial, scientific, and medical RF equipment that operates in the unlicensed or lightly-regulated portions around 1.9 GHz can use the MD7P19130HR3 as a high-power final-stage amplifier. Its 28 V operation and 65 V drain rating give the headroom needed for continuous-duty industrial RF generators. The package's bolt-down flange simplifies chassis-mount integration, where reliable thermal contact is critical for round-the-clock operation.
Được đề xuất
Multi-Carrier UMTS Final-Stage Driver
Multi-carrier UMTS transmitter designs that combine several W-CDMA carriers onto a single final stage also see the MD7P19130HR3 used as a workhorse. Its 40 W average capability at 30% drain efficiency delivers competitive cost-per-watt, while the lateral N-channel enhancement-mode process scales cleanly across the full Band 1 downlink. Properly designed output matching preserves linearity across the multi-carrier CCDF envelope.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MD7P19130HR3 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MRF8S19140HR3 | MD7P19130HSR3 | MRF8P19080HR3 |
|---|---|---|---|---|
| Package | NI-780-4 (Case 465M-01, Style 1) | NI-780-4 - same | NI-780-4 - same | NI-780-4 - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1805-1920 MHz |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V |
| Output Power (W-CDMA Avg) | 40 W | 40 W | 40 W | 8 W |
| Power Gain | 20 dB | 17.5 dB | 20 dB | 15 dB |
| Drain Efficiency | 30% | 32% | 30% | 27% |
| Transistor Type | LDMOS (N-Channel) | LDMOS (N-Channel) | LDMOS (N-Channel) | LDMOS (N-Channel) |
Bảo phân biệt quan trọng
- Tuned specifically for the 1930-1990 MHz Band 1 downlink (vsMRF8P19080HR3)
- 30% drain efficiency at 40 W W-CDMA with -36 dBc ACPR (vsMRF8S19140HR3)
Ghi chú thiết kế
Estimated: At 40 W W-CDMA Pout with 30% drain efficiency, the device dissipates roughly 93 W continuously. The NI-780-4 ceramic flange is the primary thermal path; use a thermal interface material rated at <=0.5 C/W to keep the junction below the published 200 C limit. Mounting torque to the heatsink should follow the datasheet mechanical drawing, and the PCB copper under the flange should be at least 4 oz for RF grounding and heat spreading.
RF input and output traces must be 50 ohm controlled-impedance microstrip on a low-loss substrate such as Rogers RO4350B or Arlon AD255C. Keep the gate and drain bond leads short; the gate bond-wire inductance directly impacts gain at 1.99 GHz, so place the input matching network within a few millimeters of the gate pad. Stitching vias around the substrate edges help suppress parallel-plate modes that can degrade efficiency.
Do not exceed the 65 V drain-voltage rating, even under transient load-pull or output VSWR mismatch. Input drive should be limited to keep the gate below the turn-on threshold during turn-off transients. Bias sequencing matters: bias the gate to its quiescent point before ramping VDD, and gate-off first when shutting down. Without proper sequencing the device can experience avalanche breakdown at the gate-drain overlap region.
Thông tin tuân thủ
RoHS / REACH / lead-free status was not present in the verified data set and should be confirmed from the NXP material declaration or latest datasheet revision. Part is a base-station power transistor (not AEC-Q100).
