MRF6S21100NR1 - 23W 2.11-2.17GHz RF Power LDMOS | NXP
MPN: MRF6S21100NR1 ✓ فعالMRF6S21100NR1 جائزہ
An RF power lateral MOSFET is a type of discrete power semiconductor designed specifically to amplify high-frequency signals with high efficiency and high gain. The LDMOS (Laterally Diffused Metal Oxide Semiconductor) family sits within the broader MOSFET taxonomy (power MOSFET -> RF MOSFET -> LDMOS) and is the dominant technology for cellular base-station power amplifiers because of its high breakdown voltage, excellent thermal performance, and linearity under digital modulation. The MRF6S21100NR1 targets the cellular downlink band used by 3G W-CDMA and early LTE base-station radios.
Key features include 14.5 dB typical gain at 2.11 GHz, a 28 V operating drain supply, 23 W average output power, lateral N-channel construction for improved ruggedness, and a plastic TO-270 WB-4 overmold package with integrated flanged lead frame. The device is rated for Class AB operation and accepts the high PAR (peak-to-average ratio) associated with multi-carrier W-CDMA signals. Thermal management is delivered through the source-lead frame, allowing direct PCB solder-down for low thermal resistance.
Architecturally, the device uses Freescale/NXP's seventh-generation RF LDMOS process, which provides higher power density than earlier-generation MOSFETs and improved intermodulation performance under digital modulation. The lateral structure reduces source inductance and supports broadband matching over the 2110 to 2170 MHz band. Internal gate-source ESD protection and a stable quiescent bias point make the transistor robust against overdrive and load mismatch at the antenna interface.
Typical applications include W-CDMA base-station power amplifiers in the 2110-2170 MHz downlink band, multi-carrier TDMA and CDMA amplifier stages, PCN/PCS cellular radio final stages, and WLL/TD-SCDMA power amplifiers. The device is commonly paired with NXP driver-stage LDMOS and a circulator/isolator at the output for stable impedance and reverse-power protection.
When designing with the MRF6S21100NR1, careful attention to input and output matching networks is essential because the device is specified for a 50 ohm test fixture. Designers should also implement drain-voltage sequencing, gate-bias ramp on enable, and adequate thermal vias under the source flange to keep junction temperature below 200 °C at full CW power.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical RF PA design notes that go beyond the manufacturer datasheet, helping engineers shorten RF design cycles and reduce design risk.
کے لیے ڈراپ اِن متبادل MRF6S21100NR1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں MRF6S21100NR1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Mounting Type, Package / Case, Technology, Transistor Type, Application.
MRF6S21100NBR1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF8S21100HSR3
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →MRF6S21100HSR3
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہ📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MRF6S21100NR1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| ٹرانزسٹر کی قسم | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power LDMOS (7th-generation) |
| Frequency Band | 2110 MHz to 2170 MHz (W-CDMA downlink) |
| Drain Voltage (VDD) | 28 V |
| Drain Current (Continuous) | 1.05 A |
| Power Gain | 14.5 dB typical at 2.11 GHz |
| Output Power (Pout) | 23 W average (W-CDMA) |
| Quiescent Current (IDQ) | 1600 mA |
| پیکیج / کیس | TO-270 WB-4 (Case 1486-03, Style 1) |
| ماؤنٹنگ ٹائپ | Surface Mount (plastic overmold) |
| Operating Mode | Class AB |
| Modulation Support | W-CDMA, TDMA, CDMA, multi-carrier |
| Drain-Source Breakdown (V(BR)DSS) | 68 V (rated) |
MRF6S21100NR1 پن کنفیگریشن
| پن 1 | DRAIN — RF output / drain DC supply (28 V) |
| پن 2 | GATE — Gate bias input (set for IDQ = 1600 mA) |
| پن 3 | SOURCE — Source / RF ground and thermal path (PCB flange) |
DC محفوظ آپریٹنگ ایریا
عام استعمالات
MRF6S21100NR1 کے لیے موزوں ہے 6 ایپلیکیشنs: W-CDMA Base Station Final PA, Multi-Carrier CDMA Power Amplifier, TD-SCDMA Cellular Radio Power Amplifier, WLL Fixed Wireless Access Power Amplifier, PCN/PCS Cellular Radio Repeater, Industrial RF Heating and Plasma Generator.
W-CDMA Base Station Final PA
The MRF6S21100NR1 is purpose-built for the final power amplifier stage of 2110-2170 MHz W-CDMA base-station transmitters. Its 14.5 dB typical gain at 2.11 GHz and 23 W average power under high-PAR modulation match the per-carrier output requirements of macro-cell 3G base stations, while the 28 V VDD aligns with standard -48V telecom bus-fed PA rails. The LDMOS process delivers the linearity required for W-CDMA adjacent-channel leakage without external DPD. Designers place it between a driver-stage NXP LDMOS and a circulator/isolator, terminating in a microstrip output match referenced to L50 ohm system impedance.
تجویز کردہ
Multi-Carrier CDMA Power Amplifier
For multi-carrier CDMA amplifier applications covering 2110-2170 MHz, the MRF6S21100NR1's 23 W average rating, 28 V VDD, and 14.5 dB gain provide a proven output stage when two or three carriers are combined. The device's lateral N-channel construction handles the composite peak-to-average ratio while maintaining acceptable IMD3/IMD5 levels. In a multi-carrier lineup, the MRF6S21100NR1 typically follows a higher-power driver and feeds a bandpass-filter/combiner network. Adequate heatsinking of the TO-270 WB-4 flange is mandatory because composite power pushes dissipation above single-carrier levels.
تجویز کردہ
TD-SCDMA Cellular Radio Power Amplifier
TD-SCDMA base-station transmitters in the 2010-2025 MHz / 2300-2400 MHz bands can use the MRF6S21100NR1 in applications where the deployment falls in the 2110-2170 MHz overlap with W-CDMA. Its Class AB operation, 14.5 dB gain, and 23 W average output are well-matched to TD-SCDMA macro-cell final stages. The TO-270 WB-4 overmold package simplifies PCB integration and supports reflow-compatible assembly. Designers should verify the matching network tuning points at the actual TD-SCDMA carrier frequency before substituting this part into a TD-SCDMA design.
تجویز کردہ
WLL Fixed Wireless Access Power Amplifier
Wireless Local Loop (WLL) and fixed-wireless-access base-station radios using W-CDMA or CDMA2000 modulation in the 2110-2170 MHz band are a strong fit for the MRF6S21100NR1. The device's 23 W average rating supports the link budget for subscriber-unit-to-base-station coverage in rural or suburban deployments. Its 28 V single-rail supply simplifies the WLL radio's DC-DC converter chain. Thermal design must account for continuous operation, because WLL radios typically run at high duty cycle. The TO-270 WB-4 source-flange path allows direct PCB heat spreading with copper pours and thermal vias.
تجویز کردہ
PCN/PCS Cellular Radio Repeater
The MRF6S21100NR1 can serve as the final stage in 2110-2170 MHz PCN/PCS cellular radio repeaters and on-channel boosters, where its 23 W average rating covers the downlink output requirement for small-cell and micro-cell coverage. The 14.5 dB gain reduces the gain burden on the preceding driver stages, and the Class AB bias point preserves linearity for the retransmitted W-CDMA waveform. Paired with a circulator and SAW filter at the input, the design achieves good out-of-band emission performance. The 28 V VDD matches the standard telecom bus rail available in repeater enclosures.
تجویز کردہ
Industrial RF Heating and Plasma Generator
Although optimized for W-CDMA, the MRF6S21100NR1's 28 V LDMOS construction and 1.05 A continuous drain rating make it usable in industrial 2.11-2.17 GHz continuous-wave RF heating or plasma-generator prototypes where 23 W average power is sufficient. Its lateral N-channel architecture tolerates the load-mismatch conditions common in plasma chambers. Designers must add external VSWR protection and forced-air cooling because industrial applications typically exceed the CW-rated dissipation of the cellular-optimized device. Always derate the operating point for CW industrial duty cycles versus the W-CDMA-rated average.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا MRF6S21100NR1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | MRF6S21100NBR1 | MRF8S21100HSR3 | MRF6S21100HSR3 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270 WB-4 | TO-270 WB-4 - same | TO-270 WB-4 (NI-400S equivalent) - same footprint class | TO-270 WB-4 - same |
| Output Power (Average) | 23 W | 23 W | 100 W pulsed (~3-4x higher class) | 23 W class |
| Frequency Band | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V |
| Power Gain | 14.5 dB | 14.5 dB | 18 dB typical | 14.5 dB typical |
| Generation | 6th-gen LDMOS | 6th-gen LDMOS | 8th-gen LDMOS | 6th-gen LDMOS |
اہم امتیازی خصوصیات
- Proven 6th-generation NXP LDMOS for cost-sensitive W-CDMA base-station PAs (بمقابلہMRF8S21100HSR3)
- Same datasheet as MRF6S21100NBR1 for streamlined second-source qualification (بمقابلہMRF6S21100NBR1)
- Standard 28 V single-rail operation simplifies power-conversion design (بمقابلہGaN HEMT PA at same band)
ڈیزائن نوٹس
Estimated: At 28 V VDD, 23 W average W-CDMA output, and 14.5 dB gain, the MRF6S21100NR1 dissipates roughly 14-17 W under full drive. With the TO-270 WB-4 package's theta_JC of ~0.85 °C/W (per NXP TO-270 family data, confirm exact value from datasheet), junction temperature rises ~12-14 °C/W of dissipation. Provide a copper pour under the source flange of at least 1 square inch with 12+ thermal vias to keep Tj below 200 °C. Forced-air cooling is recommended for continuous W-CDMA operation above 30 °C ambient.
The TO-270 WB-4 package has the source as the primary RF ground and thermal path. Solder the source flange directly to the PCB ground plane with a continuous ground pour extending at least 5 mm beyond the package outline on all sides. Use ceramic-chip RF bypass capacitors (100 pF and 10 nF in parallel) within 1 mm of the drain and gate pads. Maintain 50 ohm microstrip transmission lines on the substrate selected for the operating frequency; substrate thickness of 0.5-0.8 mm with Er = 3.5-4.5 is typical for 2.1-2.2 GHz designs.
Do not exceed the V(BR)DSS of 65 V on the drain; any overshoot from load mismatch can permanently damage the LDMOS cell. Always include a circulator or isolator between the PA output and the antenna feed to protect against VSWR > 2:1. Do not bias the gate above 4 V at any time, including during power sequencing; gate breakdown is irreversible. Sequence gate bias before drain voltage to prevent in-rush current damage, and verify the bias supply cannot overshoot above 4 V at turn-on.
Keep the input and output matching networks physically separated to prevent feedback oscillation. Use a via fence around the RF signal traces with via spacing less than λ/20 at 2.15 GHz (about 3 mm). Place the gate and drain bias chokes perpendicular to the RF signal flow to minimize magnetic coupling. For multi-stage designs, isolate driver and final stages with a slotted ground plane or a shielding wall to prevent inter-stage oscillation above 4 GHz.
تعمیل کی معلومات
RoHS and lead-free status not confirmed in provided data - verify against NXP material declaration before use in RoHS-restricted designs. AEC-Q100 not applicable - this is a base-station RF power transistor, not an automotive-grade part.
