MT47H64M16NF-25E AIT:M TR - 1Gb DDR2 SDRAM 400MHz | Micron
MPN: MT47H64M16NF-25E AIT:M TR ✓ فعالMT47H64M16NF-25E AIT:M TR جائزہ
DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random Access Memory) is a type of volatile DRAM that transfers data on both rising and falling edges of the clock, doubling the effective data rate of the earlier DDR generation. Within the memory hierarchy, it sits below modern DDR3/DDR4 devices but remains widely used in embedded and industrial platforms: DRAM -> synchronous DRAM -> DDR SDRAM -> DDR2 SDRAM -> memory IC. DDR2 devices use a 4n prefetch architecture, on-die termination (ODT), and posted CAS additive latency to sustain high bus efficiency.
Key features of this device include the automotive AIT grade, qualified to AEC-Q100, and a wide operating temperature range of -40C to +95C, making it suitable for under-hood-adjacent and harsh-environment applications. The 16-bit data bus organization simplifies 32-bit and 64-bit bus designs by paralleling two or four devices. The FBGA package minimizes inductance and supports high signal integrity at DDR2-800 speeds. The :M designation denotes the lead-free (RoHS) matte-tin ball finish option.
The device supports standard DDR2 features including burst lengths of 4 and 8, CAS latency options, and programmable drive strength. According to Micron product documentation, the -25E speed grade corresponds to DDR2-800 operation at CL5 with a 1.8V +/- 0.1V supply rail.
Typical applications include automotive infotainment and telematics memory, industrial control and human-machine interface (HMI) systems, networking equipment buffering, and test instrumentation working memory.
Designers should implement proper fly-by or daisy-chained DDR2 bus topology with on-die termination enabled and follow Micron's layout guidelines for length matching and reference-plane continuity to maintain signal integrity at 400 MHz.
This page adds value beyond the datasheet by synthesizing distributor availability, drop-in alternatives, comparison tables, and practical design notes in a single reference.
کے لیے ڈراپ اِن متبادل MT47H64M16NF-25E AIT:M TR — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
MT47H64M16NF-25E:M TR
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MT47H64M16NF-25E AIT:M
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MT47H64M16NF-25E-IT:M
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MT47H64M16NF-25E AAT:M TR
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
HY5PS1G1631C
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
K4T1G164QF
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
NT5TU32M16DG
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
MT47H64M16NF-25E AIT:M TR زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| میموری ٹائپ | DDR2 SDRAM |
| میموری سائز | 1 Gbit |
| تنظیم | 64M x 16 |
| سپلائی وولٹیج | 1.8 V |
| Clock Frequency | 400 MHz |
| ڈیٹا ریٹ | 800 MT/s (DDR2-800) |
| Access Time | 400 ps |
| انٹرفیس | Parallel |
| Speed Grade | -25E |
| آپریٹنگ درجہ حرارت | -40C to +95C |
| پیکیج | 84-FBGA (8 x 12.5 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified (AIT grade) |
| Packaging | Tape & Reel (TR) |
| RoHS اسٹیٹس | Compliant (lead-free) |
MT47H64M16NF-25E AIT:M TR 84-fbga (8 x 12.5 mm) پن کنفیگریشن گائیڈ
MT47H64M16NF-25E AIT:M TR (84-fbga (8 x 12.5 mm) پیکیج) کے لیے پن کنفیگریشن۔ اس ڈیجیٹل IC میں GPIO، کمیونیکیشن انٹرفیس (UART، SPI، I2C) اور پاور پنز شامل ہیں۔ متبادل پن فنکشنز اور کنفیگریشن آپشنز کے لیے مینوفیکچرر کے ڈیٹا شیٹ سے رجوع کریں۔ ایمبیڈڈ سسٹم ڈیزائن اور PCB لے آؤٹ کے لیے ضروری۔
کے لیے تفصیلی پن آؤٹ ڈیٹا دستیاب نہیں MT47H64M16NF-25E AIT:M TR.
رجوع کریں ڈیٹا شیٹ مکمل پن کنفیگریشن کے لیے۔
عام استعمالات
MT47H64M16NF-25E AIT:M TR کے لیے موزوں ہے 6 ایپلیکیشنs: Automotive Infotainment and Telematics, Industrial HMI and Control Panels, Networking Equipment Packet Buffering, Test and Measurement Instrumentation, Embedded Linux Single-Board Computers, Medical Monitoring and Diagnostic Equipment.
Automotive Infotainment and Telematics
The MT47H64M16NF-25E AIT:M TR fits automotive infotainment and telematics modules because its AIT grade is AEC-Q100 qualified and rated -40C to +95C, matching the temperature stress of cabin-near and dash-mounted electronics. Its 1 Gbit 64M x16 organization at DDR2-800 (400 MHz clock, 800 MT/s) provides the working memory for navigation rendering, audio buffering, and connectivity stacks. In the memory subsystem it sits beside the application processor as the main volatile DRAM, typically on a point-to-point 16-bit bus with on-die termination enabled. The quantified benefit is a qualified, traceable DRAM that sustains 1.6 GB/s peak bandwidth per device while meeting automotive temperature and quality requirements, reducing field-failure risk versus commercial-grade DDR2.
تجویز کردہ
Industrial HMI and Control Panels
Industrial human-machine interface panels benefit from this device's combination of DDR2-800 bandwidth and the wide -40C to +95C operating range inherited from its automotive qualification, which comfortably exceeds typical factory-floor ambient requirements. The 64M x16 organization provides 128 MB of working memory per device for graphics frame buffers and application data on Linux- or RTOS-based HMIs. Placement is as the primary DRAM behind the graphics-capable SoC, wired to the dedicated DDR2 controller with length-matched traces and ODT enabled per Micron layout guidance. Using an AEC-Q100 part in industrial equipment adds margin against thermal cycling and vibration-related solder fatigue inherent to the 84-ball FBGA package, improving long-term reliability in 24/7 duty-cycle installations.
تجویز کردہ
Networking Equipment Packet Buffering
In switches, routers, and industrial gateways, packet buffering demands sustained random-access bandwidth, and the MT47H64M16NF-25E AIT:M TR delivers 800 MT/s on a 16-bit bus - about 1.6 GB/s peak per device. Its 400 ps access time and burst lengths of 4 and 8 align with the descriptor-ring and buffer-pool structures typical of network SoCs. Multiple devices can be paralleled into 32-bit or 64-bit buses to scale bandwidth, and the FBGA package's short ball interconnects keep signal integrity manageable at 400 MHz. The wide temperature range also suits unventilated telecom cabinets; the trade-off versus newer DDR3 is higher per-bit power, acceptable in legacy platform refreshes where the DDR2 controller is already designed in.
تجویز کردہ
Test and Measurement Instrumentation
Bench and portable test instruments use this device as acquisition memory for digitizer samples and as working memory for the embedded processor. The 1 Gbit density stores approximately 64M of 16-bit samples, while DDR2-800 performance (400 MHz clock, 400 ps access) sustains the streaming rates required for waveform capture with 16-bit ADCs. The AEC-Q100 qualification and -40C to +95C rating give instrument makers a derated, well-characterized memory for products used near heat-generating front ends. In the design, the DRAM connects to the FPGA or DSP memory controller with fly-by termination and matched-length routing; the benefit is high capture throughput in a single 84-FBGA footprint, minimizing board area in compact handheld instruments.
تجویز کردہ
Embedded Linux Single-Board Computers
Legacy embedded Linux platforms - PoS terminals, gateways, and edge controllers - commonly pair 1 Gbit DDR2 devices with ARM9/ARM11-class SoCs, and the MT47H64M16NF-25E AIT:M TR is a direct-fit main memory for these designs. Its 64M x16 organization matches 16-bit DDR2 controller ports, and 128 MB capacity supports bootloaders, root filesystem execution, and application buffers. The automotive qualification adds durability for always-on equipment, and the :M lead-free matte-tin finish satisfies RoHS assembly requirements. Because the -25E speed grade is widely supported by mature SoC DDR2 init code, integration risk is low; the main design attention points are termination configuration and DRAM initialization timing as specified in Micron's DDR2 documentation.
تجویز کردہ
Medical Monitoring and Diagnostic Equipment
Patient monitors and portable diagnostic devices require reliable working memory for signal processing buffers, trend storage staging, and GUI rendering, and the MT47H64M16NF-25E AIT:M TR supplies 1 Gbit of DDR2 bandwidth (800 MT/s) with an automotive-grade reliability pedigree that translates well into medical quality systems. Its 64M x16 organization simplifies 16-bit sample pipelines, and operation across -40C to +95C tolerates enclosed housings without forced airflow. In such designs the DRAM typically connects to a medical-grade processor via a point-to-point DDR2 bus with on-die termination; using an AEC-Q100 qualified component supports the documented-component evidence expected in medical device risk management, while the FBGA package supports compact, sealed enclosures typical of bedside and ambulatory monitors.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا MT47H64M16NF-25E AIT:M TR — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | MT47H64M16NF-25E:M TR | MT47H64M16NF-25E-IT:M | HY5PS1G1631C | K4T1G164QF |
|---|---|---|---|---|---|
| Package | 84-FBGA (8 x 12.5 mm) | 84-FBGA (8 x 12.5 mm) - same | 84-FBGA (8 x 12.5 mm) - same | 84-FBGA - verify ballout | 84-FBGA - verify ballout |
| Brand | Micron Technology | Micron Technology | Micron Technology | SK Hynix | Samsung Electronics |
| Memory Size / Organization | 1 Gbit, 64M x 16 | 1 Gbit, 64M x 16 | 1 Gbit, 64M x 16 | 1 Gbit, x16 | 1 Gbit, 64M x 16 |
| Supply Voltage | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
اہم امتیازی خصوصیات
- Automotive AEC-Q100 qualification (بمقابلہMT47H64M16NF-25E:M TR)
- Tape-and-reel delivery for volume assembly (بمقابلہMT47H64M16NF-25E AIT:M (tray))
- Multi-vendor second sources cited by distributors (بمقابلہHY5PS1G1631C / K4T1G164QF)
ڈیزائن نوٹس
At DDR2-800 the data strobes toggle at 400 MHz, so route the DQ/DQS/DM bus with matched intra-byte lengths and a continuous reference plane. Enable on-die termination (ODT) and use the controller's write-leveling/read-training routines at bring-up. Keep stub lengths under a few millimeters in point-to-point topologies; for two-slot daisy chains, follow Micron's DDR2 layout application guidance for termination placement and trace impedance targets.
The device runs from a 1.8V +/- 0.1V rail (VDD/VDDQ). Estimated: at moderate utilization an x16 DDR2-800 device draws on the order of a few hundred milliwatts; size the 1.8V regulator for peak burst currents with bulk capacitance near the FBGA balls. Decouple each VDD/VDDQ ball group with at least 0.1 uF ceramic plus local bulk capacitance, and verify droop during all-bank bursts against the datasheet AC operating conditions.
Do not assume automotive suitability of the standard -25E:M grade - only the AIT/A-suffix grades are AEC-Q100 qualified. Also confirm controller support for the -25E speed grade (CL, tRC, tFAW settings in the DDR2 init table) and configure the mode registers to match the Micron datasheet defaults before first boot. When substituting cross-brand parts, verify the 84-ball ballout against your PCB rather than assuming JEDEC-identical mapping.
تعمیل کی معلومات
AIT grade is automotive AEC-Q100 qualified per datasheets.com part data (updated 08-SEP-2024). The :M suffix denotes lead-free matte-tin ball finish (RoHS-compliant). REACH, halogen-free, and conflict-minerals status not stated in provided data.
