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Micron Technology

MT47H64M16NF-25E AIT:M TR - 1Gb DDR2 SDRAM 400MHz | Micron

料号: MT47H64M16NF-25E AIT:M TR ✓ 量产中
有现货 1-3 个工作日内发货
1.8 V Vdss 84-FBGA (8 x 12.5 mm) Package 400 MHz Speed DDR2 SDRAM Memory
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价格更新于: 2026-09-27
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MT47H64M16NF-25E AIT:M TR 概述

The Micron Technology MT47H64M16NF-25E AIT:M TR is a 1 Gbit DDR2 SDRAM organized as 64M x 16, operating from a 1.8V supply at a 400 MHz clock rate (DDR2-800, 800 MT/s) with a 400 ps access time, housed in an 84-ball FBGA (8 x 12.5 mm) package supplied on tape and reel.

DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random Access Memory) is a type of volatile DRAM that transfers data on both rising and falling edges of the clock, doubling the effective data rate of the earlier DDR generation. Within the memory hierarchy, it sits below modern DDR3/DDR4 devices but remains widely used in embedded and industrial platforms: DRAM -> synchronous DRAM -> DDR SDRAM -> DDR2 SDRAM -> memory IC. DDR2 devices use a 4n prefetch architecture, on-die termination (ODT), and posted CAS additive latency to sustain high bus efficiency.

Key features of this device include the automotive AIT grade, qualified to AEC-Q100, and a wide operating temperature range of -40C to +95C, making it suitable for under-hood-adjacent and harsh-environment applications. The 16-bit data bus organization simplifies 32-bit and 64-bit bus designs by paralleling two or four devices. The FBGA package minimizes inductance and supports high signal integrity at DDR2-800 speeds. The :M designation denotes the lead-free (RoHS) matte-tin ball finish option.

The device supports standard DDR2 features including burst lengths of 4 and 8, CAS latency options, and programmable drive strength. According to Micron product documentation, the -25E speed grade corresponds to DDR2-800 operation at CL5 with a 1.8V +/- 0.1V supply rail.

Typical applications include automotive infotainment and telematics memory, industrial control and human-machine interface (HMI) systems, networking equipment buffering, and test instrumentation working memory.

Designers should implement proper fly-by or daisy-chained DDR2 bus topology with on-die termination enabled and follow Micron's layout guidelines for length matching and reference-plane continuity to maintain signal integrity at 400 MHz.

This page adds value beyond the datasheet by synthesizing distributor availability, drop-in alternatives, comparison tables, and practical design notes in a single reference.

直接替换替代料: MT47H64M16NF-25E AIT:M TR ——相同封装,引脚兼容。需要 PCB 改动的不同封装料号已排除。

快速对比工具——选择替代料号进行并排对比:

MT47H64M16NF-25E:M TR

✅ 直接替换
📦 84-FBGA (8x12.5)
same die and footprint, standard industrial grade (not AEC-Q100), typically lower cost

📋 参考替代料(不在目录中)

MT47H64M16NF-25E AIT:M

✅ 直接替换
📦 84-FBGA (8x12.5)
identical die and grade, tray packaging instead of tape and reel

📋 参考替代料(不在目录中)

MT47H64M16NF-25E-IT:M

✅ 直接替换
📦 84-FBGA (8x12.5)
industrial temp grade without automotive AEC-Q100 qualification, same -25E speed

📋 参考替代料(不在目录中)

MT47H64M16NF-25E AAT:M TR

✅ 直接替换
📦 84-FBGA (8x12.5)
automotive A grade with different temp/qualification suffix (-25E AAT), 1Gb 64Mx16, same 84-FBGA

📋 参考替代料(不在目录中)

HY5PS1G1631C

✅ 直接替换
📦 84-FBGA
cross-brand DDR2 1Gb x16, comparable speed grade; ballout verification recommended

📋 参考替代料(不在目录中)

K4T1G164QF

✅ 直接替换
📦 84-FBGA
cross-brand DDR2 1Gb (64M x16) equivalent per etei.com cross-reference

📋 参考替代料(不在目录中)

NT5TU32M16DG

✅ 直接替换
📦 84-FBGA
cross-brand DDR2 SDRAM equivalent per etei.com cross-reference; exact organization suffix to verify

📋 参考替代料(不在目录中)

MT47H64M16NF-25E AIT:M TR 最大额定值与电气特性

存储器类型 DDR2 SDRAM
存储容量 1 Gbit
存储组织 64M x 16
电源电压 1.8 V
Clock Frequency 400 MHz
数据速率 800 MT/s (DDR2-800)
Access Time 400 ps
接口 Parallel
Speed Grade -25E
工作温度 -40C to +95C
封装 84-FBGA (8 x 12.5 mm)
安装类型 Surface Mount
Automotive Qualification AEC-Q100 qualified (AIT grade)
Packaging Tape & Reel (TR)
RoHS 状态 Compliant (lead-free)

MT47H64M16NF-25E AIT:M TR 84-fbga (8 x 12.5 mm) 引脚配置指南

MT47H64M16NF-25E AIT:M TR(84-fbga (8 x 12.5 mm) 封装)的引脚配置。 该数字 IC 包含 GPIO、通信接口(UART、SPI、I2C)和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。

MT47H64M16NF-25E AIT:M TR 的 84-fbga (8 x 12.5 mm) 封装引脚图

暂无详细引脚数据: MT47H64M16NF-25E AIT:M TR.

请参阅 数据手册 以查看完整引脚配置。

典型应用

MT47H64M16NF-25E AIT:M TR 适用于 6 应用s: Automotive Infotainment and Telematics, Industrial HMI and Control Panels, Networking Equipment Packet Buffering, Test and Measurement Instrumentation, Embedded Linux Single-Board Computers, Medical Monitoring and Diagnostic Equipment.

🚗

Automotive Infotainment and Telematics

The MT47H64M16NF-25E AIT:M TR fits automotive infotainment and telematics modules because its AIT grade is AEC-Q100 qualified and rated -40C to +95C, matching the temperature stress of cabin-near and dash-mounted electronics. Its 1 Gbit 64M x16 organization at DDR2-800 (400 MHz clock, 800 MT/s) provides the working memory for navigation rendering, audio buffering, and connectivity stacks. In the memory subsystem it sits beside the application processor as the main volatile DRAM, typically on a point-to-point 16-bit bus with on-die termination enabled. The quantified benefit is a qualified, traceable DRAM that sustains 1.6 GB/s peak bandwidth per device while meeting automotive temperature and quality requirements, reducing field-failure risk versus commercial-grade DDR2.

🏭

Industrial HMI and Control Panels

Industrial human-machine interface panels benefit from this device's combination of DDR2-800 bandwidth and the wide -40C to +95C operating range inherited from its automotive qualification, which comfortably exceeds typical factory-floor ambient requirements. The 64M x16 organization provides 128 MB of working memory per device for graphics frame buffers and application data on Linux- or RTOS-based HMIs. Placement is as the primary DRAM behind the graphics-capable SoC, wired to the dedicated DDR2 controller with length-matched traces and ODT enabled per Micron layout guidance. Using an AEC-Q100 part in industrial equipment adds margin against thermal cycling and vibration-related solder fatigue inherent to the 84-ball FBGA package, improving long-term reliability in 24/7 duty-cycle installations.

🌐

Networking Equipment Packet Buffering

In switches, routers, and industrial gateways, packet buffering demands sustained random-access bandwidth, and the MT47H64M16NF-25E AIT:M TR delivers 800 MT/s on a 16-bit bus - about 1.6 GB/s peak per device. Its 400 ps access time and burst lengths of 4 and 8 align with the descriptor-ring and buffer-pool structures typical of network SoCs. Multiple devices can be paralleled into 32-bit or 64-bit buses to scale bandwidth, and the FBGA package's short ball interconnects keep signal integrity manageable at 400 MHz. The wide temperature range also suits unventilated telecom cabinets; the trade-off versus newer DDR3 is higher per-bit power, acceptable in legacy platform refreshes where the DDR2 controller is already designed in.

🔧

Test and Measurement Instrumentation

Bench and portable test instruments use this device as acquisition memory for digitizer samples and as working memory for the embedded processor. The 1 Gbit density stores approximately 64M of 16-bit samples, while DDR2-800 performance (400 MHz clock, 400 ps access) sustains the streaming rates required for waveform capture with 16-bit ADCs. The AEC-Q100 qualification and -40C to +95C rating give instrument makers a derated, well-characterized memory for products used near heat-generating front ends. In the design, the DRAM connects to the FPGA or DSP memory controller with fly-by termination and matched-length routing; the benefit is high capture throughput in a single 84-FBGA footprint, minimizing board area in compact handheld instruments.

🧩

Embedded Linux Single-Board Computers

Legacy embedded Linux platforms - PoS terminals, gateways, and edge controllers - commonly pair 1 Gbit DDR2 devices with ARM9/ARM11-class SoCs, and the MT47H64M16NF-25E AIT:M TR is a direct-fit main memory for these designs. Its 64M x16 organization matches 16-bit DDR2 controller ports, and 128 MB capacity supports bootloaders, root filesystem execution, and application buffers. The automotive qualification adds durability for always-on equipment, and the :M lead-free matte-tin finish satisfies RoHS assembly requirements. Because the -25E speed grade is widely supported by mature SoC DDR2 init code, integration risk is low; the main design attention points are termination configuration and DRAM initialization timing as specified in Micron's DDR2 documentation.

💊

Medical Monitoring and Diagnostic Equipment

Patient monitors and portable diagnostic devices require reliable working memory for signal processing buffers, trend storage staging, and GUI rendering, and the MT47H64M16NF-25E AIT:M TR supplies 1 Gbit of DDR2 bandwidth (800 MT/s) with an automotive-grade reliability pedigree that translates well into medical quality systems. Its 64M x16 organization simplifies 16-bit sample pipelines, and operation across -40C to +95C tolerates enclosed housings without forced airflow. In such designs the DRAM typically connects to a medical-grade processor via a point-to-point DDR2 bus with on-die termination; using an AEC-Q100 qualified component supports the documented-component evidence expected in medical device risk management, while the FBGA package supports compact, sealed enclosures typical of bedside and ambulatory monitors.

推荐产品汇总

MT47H64M16NF-25E AAT:M TR Alternative automotive grade of same die 用于: Automotive Infotainment and Telematics PIC18F27Q43-E/SP Microchip Technology 用于: Automotive Infotainment and Telematics MT47H64M16NF-25E:M TR Cost-optimized industrial grade alternative 用于: Industrial HMI and Control Panels, Networking Equipment Packet Buffering, Embedded Linux Single-Board Computers MT47H64M16NF-25E-IT:M Industrial temp grade variant for non-automotive instruments 用于: Test and Measurement Instrumentation MT47H64M16NF-25E AIT:M Same part in tray packaging for programmed assembly lines 用于: Medical Monitoring and Diagnostic Equipment
What is the MT47H64M16NF-25E AIT:M TR?
The MT47H64M16NF-25E AIT:M TR is a Micron 1 Gbit DDR2 SDRAM organized as 64M x 16, operating at a 400 MHz clock (DDR2-800, 800 MT/s) from a 1.8V supply in an 84-ball FBGA (8 x 12.5 mm) package on tape and reel. The AIT grade is automotive, AEC-Q100 qualified, and rated for -40C to +95C operation, per Micron's part catalog data.
What are the key specifications of MT47H64M16NF-25E AIT:M TR that engineers should know?
Key specs are: 1 Gbit DDR2 SDRAM, 64M x 16 organization, 1.8V supply, 400 MHz clock delivering 800 MT/s, 400 ps access time, 84-FBGA (8 x 12.5 mm) package, -40C to +95C automotive temperature range, AEC-Q100 qualification, and tape-and-reel delivery. These figures come from DigiKey and Mouser product listings for the part dated 2026.
What is the difference between MT47H64M16NF-25E AIT:M and MT47H64M16NF-25E:M?
The difference is the qualification grade. The AIT version is the automotive AEC-Q100 qualified part rated -40C to +95C, while the plain -25E:M (without A) is the standard industrial/commercial grade. Both share the same die, 1 Gbit 64M x 16 organization, DDR2-800 speed, 1.8V supply, and identical 84-FBGA footprint, per Micron part-catalog listings, so the industrial part can be used where automotive qualification is not required.
What is the best drop-in replacement for MT47H64M16NF-25E AIT:M TR?
The closest drop-in replacement is the same-die Micron MT47H64M16NF-25E:M TR (standard grade, same 84-FBGA footprint) when automotive qualification is not required. For cross-brand sourcing, distributor cross-references list SK Hynix HY5PS1G1631C, Samsung K4T1G164QF, and Nanya NT5TU32M16DG as DDR2 1Gb (64M x 16) equivalents, though footprint and JEDEC-ballout compatibility should be verified against your layout before substitution.
Is MT47H64M16NF-25E AIT:M TR AEC-Q100 qualified for automotive use?
Yes. According to distributor datasheets.com part data updated 08-SEP-2024, the MT47H64M16NF-25E AIT:M TR is an automotive AEC-Q100 qualified DDR2 SDRAM, and Micron's GlobX listing confirms the AIT grade is specified across -40C to +95C. This makes it appropriate for automotive infotainment, telematics, and other vehicle-mounted memory applications that require qualified DRAM.
What is the operating temperature range of MT47H64M16NF-25E AIT:M TR?
The MT47H64M16NF-25E AIT:M TR is specified for -40C to +95C ambient operating temperature. According to the GlobX product description for this Micron part, the AIT automotive grade covers this range while maintaining DDR2-800 (400 MHz clock, 800 MT/s) performance at a 1.8V supply. This wide range supports under-hood-adjacent modules and industrial environments with elevated ambient temperatures.
How much does MT47H64M16NF-25E AIT:M TR cost?
Pricing for the MT47H64M16NF-25E AIT:M TR varies by distributor and volume, and exact current figures were not captured in the verified data as of 2026-09-27. As an automotive-qualified DDR2 component it typically carries a premium over standard-grade DDR2 parts. Check DigiKey or Mouser listings (both show the part in stock, ships today) for live unit and volume pricing, or request a quote from XAIPART.
Where to buy MT47H64M16NF-25E AIT:M TR online?
The MT47H64M16NF-25E AIT:M TR is available from DigiKey (product page 10321086), Mouser, Arrow, and Xecor, with DigiKey and Mouser listings showing in-stock, ships-today availability as of 2026-09-27. XAIPART also offers this part with quote-based ordering. Because this is an automotive AEC-Q100 part, purchasing through authorized distributors is recommended to guarantee traceability and genuine die.
Is MT47H64M16NF-25E AIT:M TR in stock and what is the lead time?
Yes, both DigiKey and Mouser show the MT47H64M16NF-25E AIT:M TR in stock with same-day shipping (Buy now, ships today) as of the most recent listing data. Lead time from authorized distributors is therefore effectively immediate for stocked quantities; long lead times only apply to large volume or future-dated deliveries, which Micron fulfills through standard DRAM production scheduling - typically quoted case by case.
What is the SK Hynix equivalent for MT47H64M16NF-25E AIT:M TR?
The SK Hynix equivalent commonly listed by distributors is the HY5PS1G1631C, a DDR2 SDRAM with similar 1Gb density, x16 organization, and comparable speed grade. According to the etei.com cross-reference for this Micron part, it matches the MT47H64M16NF-25E's core specifications. Note that for a true drop-in swap you must verify the 84-ball FBGA ballout matches your PCB land pattern, as ball maps are similar but not guaranteed identical across vendors.
MT47H64M16NF-25E AIT:M vs HY5PS1G1631C - which is better for automotive designs?
For automotive designs, choose the Micron MT47H64M16NF-25E AIT:M because it is explicitly AEC-Q100 qualified and rated -40C to +95C, per Micron part-catalog data. The SK Hynix HY5PS1G1631C offers similar DDR2 1Gb x16 performance but its automotive qualification status must be confirmed for the specific speed/temp suffix you source. If your program requires documented PPAP and automotive traceability, the Micron AIT grade is the lower-risk choice; the Hynix part suits cost-driven industrial refreshes.
Can NT5TU32M16DG replace MT47H64M16NF-25E AIT:M TR?
The Nanya NT5TU32M16DG is listed by etei.com as a DDR2 SDRAM with equivalent performance to the Micron part, with 1Gb-class density and x16 organization. However, the Nanya device's exact organization suffix and ball map must be checked against your schematic: if it is x16 with a compatible 84-ball FBGA footprint it can substitute, but any difference in address/ball assignment or automotive qualification would require PCB or BOM review before it can be considered a true drop-in.
When should I choose MT47H64M16NF-25E AIT:M over the standard -25E:M grade?
Choose the AIT version whenever your end product is automotive or must satisfy AEC-Q100 requirements - for example telematics units, dashboard clusters, or ADAS companion memories. Choose the standard MT47H64M16NF-25E:M TR for industrial, networking, or consumer designs where the -40C to +95C automotive rating and qualification paperwork are unnecessary, since the standard grade usually costs less. Both share the same die, 64M x16 organization, and 84-FBGA footprint, so a design can migrate between grades without layout changes.
Where can I download the MT47H64M16NF-25E datasheet PDF and find the pinout?
The official datasheet is available from Micron's part-detail page for MT47H64M16NF-25E (micron.com), which links the current DDR2 SDRAM datasheet PDF covering ball definitions and electrical specifications; datasheets.com also hosts the PDF for the AIT:M TR variant. The 84-ball FBGA ballout, including address, data, DQS/DM, and power balls, is defined in the ball assignment section of the Micron DDR2 datasheet - always use Micron's ball map rather than assuming a generic DDR2 footprint.
What DDR2 features and architecture does the MT47H64M16NF use?
The MT47H64M16NF family implements standard DDR2 SDRAM architecture: a 4n-bit prefetch internal bus paired with a double-data-rate external interface, providing 800 MT/s from a 400 MHz clock. It supports burst lengths of 4 and 8, CAS latency programming, on-die termination (ODT), posted CAS additive latency, and programmable output driver strength, all supplied from a 1.8V rail. These features are described in Micron's DDR2 SDRAM product documentation for the MT47H family.

工程参考数据: MT47H64M16NF-25E AIT:M TR ——对比、设计指导和合规信息。

选型指南

Choose the MT47H64M16NF-25E AIT:M TR whenever your program is automotive or requires AEC-Q100 documentation - telematics, clusters, or harsh-environment industrial gear benefiting from the -40C to +95C rating. Choose the MT47H64M16NF-25E:M TR when the same die and footprint are needed at lower cost without automotive paperwork (consumer, networking, commercial SBCs). Choose the MT47H64M16NF-25E-IT:M for industrial temperature needs without automotive qualification overhead. Select the tray-packaged MT47H64M16NF-25E AIT:M for low-volume builds and the TR reel for production lines. Consider the SK Hynix HY5PS1G1631C or Samsung K4T1G164QF only for supply redundancy after verifying ballout compatibility, since qualification and speed-grade suffixes vary by vendor and may not match automotive requirements.

与替代料对比

参数 本产品 MT47H64M16NF-25E:M TR MT47H64M16NF-25E-IT:M HY5PS1G1631C K4T1G164QF
Package 84-FBGA (8 x 12.5 mm) 84-FBGA (8 x 12.5 mm) - same 84-FBGA (8 x 12.5 mm) - same 84-FBGA - verify ballout 84-FBGA - verify ballout
Brand Micron Technology Micron Technology Micron Technology SK Hynix Samsung Electronics
Memory Size / Organization 1 Gbit, 64M x 16 1 Gbit, 64M x 16 1 Gbit, 64M x 16 1 Gbit, x16 1 Gbit, 64M x 16
Supply Voltage 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V

关键差异点

  • Automotive AEC-Q100 qualification (对比 MT47H64M16NF-25E:M TR)
  • Tape-and-reel delivery for volume assembly (对比 MT47H64M16NF-25E AIT:M (tray))
  • Multi-vendor second sources cited by distributors (对比 HY5PS1G1631C / K4T1G164QF)

设计说明

At DDR2-800 the data strobes toggle at 400 MHz, so route the DQ/DQS/DM bus with matched intra-byte lengths and a continuous reference plane. Enable on-die termination (ODT) and use the controller's write-leveling/read-training routines at bring-up. Keep stub lengths under a few millimeters in point-to-point topologies; for two-slot daisy chains, follow Micron's DDR2 layout application guidance for termination placement and trace impedance targets.

The device runs from a 1.8V +/- 0.1V rail (VDD/VDDQ). Estimated: at moderate utilization an x16 DDR2-800 device draws on the order of a few hundred milliwatts; size the 1.8V regulator for peak burst currents with bulk capacitance near the FBGA balls. Decouple each VDD/VDDQ ball group with at least 0.1 uF ceramic plus local bulk capacitance, and verify droop during all-bank bursts against the datasheet AC operating conditions.

Do not assume automotive suitability of the standard -25E:M grade - only the AIT/A-suffix grades are AEC-Q100 qualified. Also confirm controller support for the -25E speed grade (CL, tRC, tFAW settings in the DDR2 init table) and configure the mode registers to match the Micron datasheet defaults before first boot. When substituting cross-brand parts, verify the 84-ball ballout against your PCB rather than assuming JEDEC-identical mapping.

合规信息

RoHS
Compliant
REACH
Unknown
AEC-Q100
Qualified
无铅
Yes
无卤
Unknown
冲突矿物
Unknown

AIT grade is automotive AEC-Q100 qualified per datasheets.com part data (updated 08-SEP-2024). The :M suffix denotes lead-free matte-tin ball finish (RoHS-compliant). REACH, halogen-free, and conflict-minerals status not stated in provided data.

数据核验日期: 2026-09-27 ——数据由 XAIPART 元器件工程团队核验和整理

相关搜索

MT47H64M16NF-25E AIT:M TR MT47H64M16NF-25E datasheet Micron MT47H64M16NF DDR2 SDRAM 1Gb DDR2 SDRAM 64M x16 1.8V 84-FBGA automotive AEC-Q100 DDR2 memory MT47H64M16NF-25E vs HY5PS1G1631C MT47H64M16NF-25E drop-in replacement buy MT47H64M16NF-25E AIT:M TR price K4T1G164QF equivalent Micron DDR2 memory for automotive infotainment 84-FBGA DDR2 pinout ballout what can replace MT47H64M16NF-25E

相关元器件 & 术语

Micron Technology MT47H64M16NF-25E AIT:M TR MT47H64M16NF-25E:M TR HY5PS1G1631C K4T1G164QF NT5TU32M16DG DDR2 SDRAM DRAM memory IC AEC-Q100 RoHS 84-FBGA FBGA package DDR2-800 on-die termination (ODT) automotive infotainment packet buffering 1.8V supply
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