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Samsung Electronics

K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung

MPN: K4B4G1646E-BCNB ✓ فعال
1.35 V (1.283 V to 1.45 V) Vdss 96-ball FBGA Package DDR3 SDRAM Memory
MOQ: 1 |

K4B4G1646E-BCNB جائزہ

The Samsung K4B4G1646E-BCNB is a 4Gb DDR3 SDRAM organized as 256Mx16, operating at 1.35V (low voltage) with a data rate of 1866 Mbps. It is ideal for mobile and embedded applications requiring high bandwidth and low power consumption. The device is housed in a 96-ball FBGA package and is RoHS compliant.

کے لیے ڈراپ اِن متبادل K4B4G1646E-BCNB — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔

اس سیریز میں مختلف ورژن

اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں K4B4G1646E-BCNB (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Memory Type, Operating Temperature, Supply Voltage, Burst Length.

Samsung Electronics
Package: 96-FBGA
Supply Voltage: 1.5 V (DDR3L variants 1.35 V)
موازنہ کریں K4B4G1646E-BCNB →
Samsung Electronics
Package: 96-ball FBGA (13 x 9 mm, 0.8 mm pitch)
Memory Type: DDR3L SDRAM
Operating Temperature: 0°C to +95°C (TC)
موازنہ کریں K4B4G1646E-BCNB →

MT41K256M16TW-107

Micron Technology
DDR3L SDRAM · 4 Gbit · 256M x 16 · Parallel · 933 MHz (DDR3L-1866) · 20 ns · 1.35 V · 16 bit

قیمت کے لیے رابطہ کریں

ڈیٹا شیٹ دیکھیں →

H5TQ4G63AFR-H9C

SK hynix
DDR3 SDRAM · 4 Gb · 256M x 16 · 1.5 V · 0.255 ns · 96-ball TFBGA · RECTANGULAR · 8192

قیمت کے لیے رابطہ کریں

ڈیٹا شیٹ دیکھیں →

IS43TR16256A-15HBL-TR

ISSI, Integrated Silicon Solution Inc
DDR3 SDRAM · 4 Gbit · 256M x 16 · 667 MHz · 1333 Mbps · 20 ns · 1.5 V · 96-TWBGA (9x13 mm)

قیمت کے لیے رابطہ کریں

ڈیٹا شیٹ دیکھیں →

W632GU6NB

Winbond DDR3 4Gb 256Mx16

📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)

AS4C256M16D3L-12BCN

Alliance Memory
DDR3L SDRAM · 4 Gbit · 256M x 16 · 16 bit · 800 MHz · 1600 Mbps · 20 ns · 1.35 V

قیمت کے لیے رابطہ کریں

ڈیٹا شیٹ دیکھیں →

K4B4G1646E-BCNB زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات

میموری ٹائپ DDR3 SDRAM
میموری سائز 4 Gb
تنظیم 256M x 16
سپلائی وولٹیج 1.35 V (1.283 V to 1.45 V)
ڈیٹا ریٹ 1866 Mbps
آپریٹنگ درجہ حرارت 0C to +95C
پیکیج 96-ball FBGA
ماؤنٹنگ ٹائپ Surface Mount
RoHS اسٹیٹس Compliant
پنز کی تعداد 96
انٹرفیس ٹائپ Parallel
Refresh 8K / 64 ms
Burst Length 8, 4 (fixed)

K4B4G1646E-BCNB پن کنفیگریشن

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
پن A1 VDD — Power supply (1.35V)
پن A2 DQ0 — Data I/O 0
پن A3 DQ1 — Data I/O 1
پن B1 VSS — Ground
پن B2 DQ2 — Data I/O 2
پن B3 DQ3 — Data I/O 3
پن C1 VDDQ — DQ power supply
پن C2 DQS0 — Data strobe 0 (positive)
پن C3 DQS0# — Data strobe 0 (negative)
پن D1 VSS — Ground
پن D2 CLK — Clock input
پن D3 CLK# — Complementary clock input
پن E1 CKE — Clock enable
پن E2 CS# — Chip select
پن E3 RAS# — Row address strobe
پن F1 CAS# — Column address strobe
پن F2 WE# — Write enable
پن F3 BA0 — Bank address 0
پن G1 BA1 — Bank address 1
پن G2 A0 — Address input 0
پن G3 A1 — Address input 1

عام استعمالات

K4B4G1646E-BCNB کے لیے موزوں ہے 6 ایپلیکیشنs: Mobile Computing, Embedded Systems, Networking Equipment, Consumer Electronics, Automotive Infotainment, Industrial Automation.

📱

Mobile Computing

Used in laptops and tablets for main memory with low power consumption.

🏭

Embedded Systems

Ideal for industrial single-board computers and IoT gateways.

🌐

Networking Equipment

Used in routers, switches, and network appliances for packet buffering.

📺

Consumer Electronics

Found in smart TVs, set-top boxes, and gaming consoles.

🚗

Automotive Infotainment

Used in car infotainment systems and navigation units.

🏭

Industrial Automation

Deployed in PLCs and HMI panels for data logging and display.

What is the supply voltage range for K4B4G1646E-BCNB?
The supply voltage is 1.35V nominal, with a range of 1.283V to 1.45V for low-voltage DDR3 operation.
What is the maximum data rate of this DDR3 SDRAM?
The K4B4G1646E-BCNB supports a data rate of 1866 Mbps per pin.
What is the memory organization of K4B4G1646E-BCNB?
It is organized as 256M words x 16 bits, totaling 4 Gb.
What package does K4B4G1646E-BCNB come in?
It is housed in a 96-ball FBGA (Fine-pitch Ball Grid Array) package.
Is K4B4G1646E-BCNB RoHS compliant?
Yes, the device is RoHS compliant.
What is the operating temperature range?
The operating temperature range is 0°C to +95°C (case temperature).
Can K4B4G1646E-BCNB be used in mobile applications?
Yes, its low voltage (1.35V) and high density make it suitable for mobile and embedded applications.
What is the difference between DDR3 and DDR3L?
DDR3L operates at 1.35V, while standard DDR3 operates at 1.5V. K4B4G1646E-BCNB is a DDR3L device.
Does K4B4G1646E-BCNB support ECC?
No, this is a non-ECC memory. ECC versions are typically x72 organizations.
What is the burst length supported?
It supports burst lengths of 8 and 4 (fixed).
What is the refresh requirement?
It requires 8K refresh cycles every 64 ms.
Is K4B4G1646E-BCNB compatible with DDR3 sockets?
Yes, it is pin-compatible with standard DDR3 sockets, but voltage levels must match.
What is the typical power consumption?
[DATA_NEEDED: Typical power consumption] Please refer to the datasheet for detailed power numbers.
What is the part number suffix meaning?
The suffix 'E' indicates the generation, 'B' indicates package type (FBGA), 'CNB' indicates speed and temperature grade.
Where can I find the full datasheet?
The datasheet is available on Samsung's semiconductor website at the provided URL.
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