BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: BSC030N08NS5ATMA1 ✓ Hoạt độngBSC030N08NS5ATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch used to convert and regulate electrical energy in switched-mode power supplies, motor drives, and battery protection circuits. Within the broader component taxonomy it sits as a subtype of field-effect transistor (FET) → transistor → discrete semiconductor. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform optimized for low-voltage, high-current applications such as 48 V telecom rails, server DC-DC converters, and automotive high-current loads.
Key differentiating features of the BSC030N08NS5 include 3.0 mΩ maximum on-resistance at VGS=10 V, an ID max rating of 100 A (Tc) with 161 A pulsed capability per the Infineon family datasheet, low voltage overshoot during switching transients, and a 2.5 W power dissipation rating on the standard 1.5 mm FR4 reference PCB (139 W on the case). The device supports 12 V standard gate-drive logic and is suitable for high-side and low-side positions in half-bridge, full-bridge, and buck/boost topologies.
At the architectural level, the OptiMOS 5 cell structure reduces gate charge Qg and miller plateau charge Qgd compared with prior generations, lowering switching losses at high di/dt. The 5x6 mm SuperSO8 land pattern offers a thermal resistance compatible with direct copper cooling on standard PCB designs, and the package's low-inductance source connection enables cleaner switching waveforms at multi-hundred-kHz operation.
Typical applications include synchronous rectification in 48 V to point-of-load converters, server and telecom DC-DC stages, battery management protection MOSFETs in 12 V/24 V/48 V systems, hot-swap controllers, motor-drive H-bridges, and high-current load switches in industrial automation. In these roles, the BSC030N08NS5ATMA1 acts as the synchronous rectifier that replaces the lossy Schottky diode, dramatically improving light-load and full-load efficiency.
Designers should observe the absolute maximum ratings carefully: VDS=80 V, VGS=±20 V (transient), ID=100 A continuous at TC=25 °C with appropriate PCB copper area, and TJ max of 150 °C. Operating above 50 °C case temperature requires derating per the datasheet Diagram 2. A low-ESR gate-drive loop, a 10 Ω gate resistor, and adequate VGS decoupling are recommended for clean switching in multi-MHz designs.
This page synthesizes distributor pricing as of 2026-09-11, drop-in alternatives sourced from the Infineon OptiMOS 5 family and authorized cross-references, and practical design notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho BSC030N08NS5ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC030N08NS5ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, RoHS Status, MSL Level, Drain-Source Voltage (VDS).
BSC021N08NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0504NSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC014N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC027N04LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC039N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC030N08NS5ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Product Type | N-Channel Power MOSFET |
| Technology | OptiMOS 5 |
| Drain-Source Voltage (VDS) max | 80 V |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| Pulsed Drain Current (ID,pulse) | 161 A |
| Gate-Source Voltage (VGS) max | +/-20 V |
| RDS(on) max at VGS=10 V | 3.0 mOhm |
| Power Dissipation (Ta=25C, 1.5mm FR4) | 2.5 W |
| Power Dissipation (TC=25C) | 139 W |
| Operating Temperature Range (TJ) | -55C to +150C |
| Hộp | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant |
| Đông trùng haogen | Yes |
| Lead-Free | Yes |
| Gate Drive Logic | Standard 10V, compatible with 12V drive |
| Optimized Application | Synchronous Rectification |
Cấu hình chân BSC030N08NS5ATMA1
| Chân 1 | S — Source (connected to pins 2, 3 internally) |
| Chân 2 | S — Source |
| Chân 3 | S — Source |
| Chân 4 | G — Gate |
| Chân 5 | D — Drain (connected to pins 6, 7, 8 and exposed pad internally) |
| Chân 6 | D — Drain |
| Chân 7 | D — Drain |
| Chân 8 | D — Drain |
Khu vực hoạt động an toàn - DC
Ứng dụng tiêu biểu
BSC030N08NS5ATMA1 phù hợp cho 6 Áp dụngs: 48V Synchronous Rectification in Server/Telecom DC-DC, Hot-Swap and Load Switch in 24V/48V Industrial Systems, Battery Management Protection in 48V Lithium Packs, BLDC Motor Drive H-Bridge in Power Tools and Robotics, Solar Inverter DC-DC Boost Stage (MPPT), High-Current USB-PD EPR Load Switch.
48V Synchronous Rectification in Server/Telecom DC-DC
The BSC030N08NS5ATMA1 fits 48 V to point-of-load synchronous rectification in server and telecom DC-DC converters because its 80 V VDS provides a 25 V safety margin against 60 V transient events on 48 V rails, while its 3.0 mΩ maximum on-resistance at 10 V VGS keeps conduction loss minimal at 30-60 A load currents. In a typical half-bridge stage, the device replaces the lossy Schottky rectifier on the low-side; OptiMOS 5's 44% lower output capacitance versus prior generations reduces switching loss at 200-500 kHz operation, directly improving light-load efficiency to meet 80 Plus Titanium and Open Compute Project (OCP) ORV3 standards. Designers place it on the same SuperSO8 5x6 mm footprint with a 6 cm² copper drain pour to achieve 139 W dissipation at TC=25 °C.
Được đề xuất
Hot-Swap and Load Switch in 24V/48V Industrial Systems
The BSC030N08NS5ATMA1 is ideal for 24 V and 48 V hot-swap controllers in industrial automation and telecom shelves because its 100 A continuous drain current and 161 A pulsed rating handle inrush transients during board insertion. The 80 V VDS rating tolerates the inductive kick of long backplane traces when the load is disconnected, and the low RDS(on) of 3.0 mΩ minimizes steady-state voltage drop across the MOSFET in the fully-enhanced ON state. Engineers wire it as a low-side switch driven by a hot-swap controller IC, with a 10 kΩ gate-source pulldown resistor to keep the device off during controller reset. The SuperSO8 5x6 mm footprint matches standard PowerPAK SO-8 land patterns, allowing direct PCB drop-in to upgrade legacy 30 V hot-swap designs to 48 V bus architectures.
Được đề xuất
Battery Management Protection in 48V Lithium Packs
The BSC030N08NS5ATMA1 serves as the high-current protection MOSFET in 48 V lithium-ion battery packs for e-mobility, stationary storage, and light-electric-vehicle applications. Its 100 A continuous ID rating supports 5 kW-class discharge without paralleling, and the 80 V VDS comfortably exceeds the 54.6 V maximum charge voltage of 13S Li-ion packs with 30% transient margin. OptiMOS 5's low Qg and Qgd reduce drive losses in the BMS protection circuit, and the SuperSO8 5x6 mm footprint enables a compact dual-MOSFET back-to-back configuration for high-side and low-side disconnect. Engineers use a dedicated gate-driver IC to achieve sub-microsecond turn-off during overcurrent events.
Được đề xuất
BLDC Motor Drive H-Bridge in Power Tools and Robotics
The BSC030N08NS5ATMA1 forms the low-side switches of a H-bridge driving 24 V to 48 V brushless DC motors in power tools, drones, and industrial robots, where its 100 A continuous ID handles peak motor currents during acceleration. The 3.0 mΩ RDS(on) at 10 V VGS keeps conduction loss low at high duty cycles, extending battery runtime in cordless applications, and the 80 V VDS tolerates the back-EMF spikes that occur when PWM-switching inductive loads. Designers typically pair two BSC030N08NS5 devices per phase with a gate driver that supports 1-2 MHz PWM; the SuperSO8 5x6 mm footprint allows two MOSFETs to fit beneath each phase on a 4-layer FR4 PCB. The OptiMOS 5 figure-of-merit enables 200 kHz+ PWM with minimal switching loss.
Được đề xuất
Solar Inverter DC-DC Boost Stage (MPPT)
The BSC030N08NS5ATMA1 is well-suited to the boost-MPPT stage of residential and commercial solar inverters operating from 40 V to 60 V panel inputs. Its 80 V VDS absorbs the voltage overshoot of the boost inductor at switch turn-off, and the 100 A continuous current rating supports 3-5 kW converter power levels without paralleling. OptiMOS 5's 44% reduction in output capacitance versus prior generations reduces hard-switching loss at 50-100 kHz, enabling higher switching frequencies that shrink the inductor and output capacitor size by 30-40%. The SuperSO8 5x6 mm footprint is compatible with PowerPAK SO-8 land patterns, easing second-source qualification against onsemi and Vishay equivalents.
Được đề xuất
High-Current USB-PD EPR Load Switch
The BSC030N08NS5ATMA1 enables a high-current load switch for USB Power Delivery Extended Power Range (EPR) sinks delivering 28 V / 36 V / 48 V at up to 100 W over USB-C. Its 80 V VDS easily handles the 48 V EPR voltage with 30% margin, while the 3.0 mΩ RDS(on) at 10 V VGS keeps the voltage drop below 150 mV at 5 A continuous load, preserving tight USB-PD voltage tolerance. The SuperSO8 5x6 mm footprint fits alongside USB-PD controllers and the BMC PHY on compact notebook and docking-station PCBs. Designers add a TVS diode for VBUS protection and a 100 kΩ gate-source pulldown to keep the switch off during firmware boot.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC030N08NS5ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC021N08NS5ATMA1 | BSC0504NSIATMA1 | BSC014N06NSATMA1 | BSC027N04LSGATMA1 | BSC039N06NSATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) - same | PG-TDSON-8-7 (SuperSO8 5x6 mm) - same | PG-TDSON-8-7 (SuperSO8 5x6 mm) - same | PG-TDSON-8-7 (SuperSO8 5x6 mm) - same | PG-TDSON-8-7 (SuperSO8 5x6 mm) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS max (V) | 80 | 80 | 40 | 60 | 40 | 60 |
| RDS(on) max at VGS=10V (mOhm) | 3.0 | 2.1 | 0.65 (40V class) | 1.4 (60V class) | 2.7 (40V class) | 3.9 (60V class) |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Optimized Application | Synchronous Rectification | Synchronous Rectification | Synchronous Rectification (low-voltage) | Synchronous Rectification (24V) | Synchronous Rectification (12V) | Synchronous Rectification (24V) |
Bảo phân biệt quan trọng
- Lowest RDS(on) in 80V SuperSO8 OptiMOS 5 family at 3.0 mΩ (vsBSC021N08NS5ATMA1)
- 80V VDS provides 30% margin above 60V telecom transients (vsBSC014N06NSATMA1)
- 100 A continuous drain current in 5x6 mm SuperSO8 package (vsBSC027N04LSGATMA1)
Ghi chú thiết kế
Estimated: At ID=50 A and RDS(on)=3.0 mΩ, conduction loss P_cond = I² × RDS(on) = 50² × 0.003 = 7.5 W. On the Infineon 6 cm² copper reference PCB, theta_JA ≈ 50 °C/W (2.5 W Ta rating) to 1.8 °C/W (139 W Tc rating) depending on copper area. For continuous 50 A operation, design with at least 6 cm² of drain copper on top layer plus thermal vias to inner planes to keep junction rise below 50 °C. Above 70 A continuous, use multiple paralleled MOSFETs or forced-air cooling.
Layout is critical at multi-hundred-kHz switching. Use a 4-layer PCB with the top layer dedicated to drain copper, an inner full ground plane, and a bottom copper layer for source return. Keep the gate-drive loop area under 0.5 cm² by placing the gate IC directly adjacent to pin 4. Add a 10 Ω series gate resistor to damp the miller plateau oscillation, and place a 100 kΩ pulldown on pin 4 to prevent unintended turn-on during controller reset. The exposed pad must be soldered to drain copper with multiple thermal vias (12+ vias, 0.3 mm drill) for 139 W power dissipation.
In a half-bridge configuration, the high-side and low-side MOSFETs should be placed symmetrically around the inductor pad to minimize the high di/dt power loop. The BSC030N08NS5ATMA1's low-inductance SuperSO8 5x6 mm package helps limit voltage overshoot; pair it with a 100 V TVS clamp (e.g., SMBJ series) on the switch node for additional margin during load transients. For multi-MHz operation, add a 1 nF ceramic bypass capacitor (X7R, 100 V) directly across the device's drain-source terminals to damp ringing.
Do not exceed VGS=±20 V even transiently; the gate oxide is thin to minimize Qg. Always include a 100 kΩ gate-source pulldown resistor to prevent floating-gate turn-on during controller start-up. When substituting from the 60 V class (BSC014N06NSATMA1) to 80 V (this part), verify the bus voltage stays below 80 V including transients; the extra margin is valuable for 48 V telecom but unneeded in 24 V industrial. Finally, observe the drain-to-source body diode reverse recovery in synchronous rectification applications - OptiMOS 5 has a soft recovery but the controller's dead-time should still be minimized.
Thông tin tuân thủ
Commercial-grade OptiMOS 5 part; not AEC-Q100 qualified - choose IAUC60N04S6L039ATMA1 or IAUZ30N06S5L140ATMA1 for automotive applications. RoHS and REACH compliant per Infineon product page. Halogen-free and lead-free per MSL-1 JEDEC J-STD-020 rating.
