BSC070N10NS5ATMA1 - 100V 7mOhm OptiMOS 5 N-MOSFET | Infineon
MPN: BSC070N10NS5ATMA1 ✓ Hoạt độngBSC070N10NS5ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device that uses an insulated gate to modulate conduction between source and drain. Within the broader power-converter hierarchy, a MOSFET sits at the switching element of a buck, boost, or half-bridge converter, downstream of the PWM controller and upstream of the output inductor and capacitor; it belongs to the wider family of power discretes (MOSFETs, IGBTs), which are themselves a sub-category of discrete semiconductors used in power management applications. OptiMOS 5 is Infineon's fifth-generation 100V trench MOSFET platform, distinguished by a lower figure of merit (RDS(on) x Qg) than prior generations.
Key differentiating specifications include a typical gate charge in the single-digit nC range for fast switching edges, a low Qrr body-diode reverse-recovery charge that suits continuous-conduction-mode (CCM) hard switching, and a PG-TDSON-8-7 package with an exposed thermal pad that keeps junction-to-case thermal resistance RthJC in the sub-1 C/W range - enabling 83W (Tc) power dissipation per the Infineon datasheet. The part is rated 2.5W at TA=25C without additional heatsinking, but PCB copper pours or an external heatsink are required at higher ambient temperatures.
Typical applications include 48V telecom and server bus converters, synchronous rectification in isolated DC-DC bricks, motor-drive H-bridges for industrial fans and e-bikes, hot-swap and OR-ing controllers in 12V/24V/48V distribution, and high-frequency point-of-load (POL) converters for compute platforms. The OptiMOS 5 family is also widely used in solar micro-inverters and battery-management protection FETs where both low RDS(on) and small Qgd are simultaneously required.
When designing with this device, select a gate driver capable of 4V to 10V VGS with sub-50ns propagation delay to exploit the part's fast switching capability. Place the gate-drive loop area to a minimum and use 1-2 ohms of external gate resistance to control dV/dt-induced ringing, and verify SOA at the intended switching frequency using the manufacturer's safe-operating-area curves rather than relying on pulsed thermal limits alone.
Bộ thay thế dễ dàng lắp đặt cho BSC070N10NS5ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC070N10NS5ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, MSL Level, Operating Temperature Range, Drain-Source Voltage (VDS).
BSC027N10NS5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC118N10NSGATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →BSC090N10NS5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
BSC097N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0501NSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC070N10NS5ATMA1 Tỷ lệ tối đa & tính chất điện
| Technology | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) max | 100 V |
| Continuous Drain Current (ID) at TC=25C | 80 A |
| RDS(on) max @ VGS=10V | 7 mOhm |
| Gate-Source Voltage (VGS) max | 20 V |
| Power Dissition at TC=25C (Ptot) | 83 W |
| Power Dissipation at TA=25C | 2.5 W |
| Khoảng nhiệt độ mối nối hoạt động | -55 C to +150 C |
| Hộp | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
| Typical Application | Synchronous rectification in SMPS |
Cấu hình chân BSC070N10NS5ATMA1
| Chân 1 | G1 — Gate 1 (independent gate connection) |
| Chân 2 | S — Source (connected to exposed thermal pad) |
| Chân 3 | S — Source (connected to exposed thermal pad) |
| Chân 4 | G2 — Gate 2 (second gate pin, internally bonded) |
| Chân 5 | D — Drain |
| Chân 6 | D — Drain |
| Chân 7 | D — Drain |
| Chân 8 | D — Drain |
Khu vực hoạt động an toàn (DC, TJ=25C)
Ứng dụng tiêu biểu
BSC070N10NS5ATMA1 phù hợp cho 6 Áp dụngs: 48V Telecom Synchronous Rectification, Server and Datacenter Point-of-Load Converters, Industrial Motor Drive H-Bridge, Solar Micro-Inverter and String Inverter, Hot-Swap and OR-ing Controllers in 48V Distribution, Battery Management System Protection FET.
48V Telecom Synchronous Rectification
The BSC070N10NS5ATMA1 serves as the low-side synchronous rectifier in 48V-input isolated DC-DC bricks feeding telecom and datacom equipment. Its 100V VDS rating provides ample margin above the 48V nominal plus transient spikes, while the 7 mOhm RDS(on) at VGS=10V keeps full-load conduction loss under 5W at 30A output. The OptiMOS 5 platform's up to 44% output capacitance reduction lowers switching loss in CCM operation, allowing 250-500 kHz switching without exceeding the 83W Tc-rated power budget. Designers place the part on the secondary side of the transformer with a digital isolator gate driver such as the Infineon 1EDI20N12AFXUMA1 to minimize dead-time and exploit the device's low Qrr body-diode reverse-recovery charge.
Được đề xuất
Server and Datacenter Point-of-Load Converters
In 48V-to-POL converters for server motherboards and GPU accelerator cards, the BSC070N10NS5ATMA1 functions as the primary-side switch in a buck topology stepping 48V down to 12V or 5V. The 100V rating withstands ringing on the switching node caused by parasitic inductance, while the SuperSO8 5x6 package's exposed pad enables direct cooling via inner PCB copper layers. Compared to older 100V generations, the OptiMOS 5 family achieves up to 43% lower RDS(on), which reduces conduction loss during heavy compute workloads and improves overall converter efficiency by 0.5-1%. The part pairs naturally with Infineon XDPL8219 or similar digital controllers for telemetry and adaptive dead-time control.
Được đề xuất
Industrial Motor Drive H-Bridge
The BSC070N10NS5ATMA1 fits the high-side and low-side positions of a 24V/36V industrial H-bridge driving brushless DC motors in fans, pumps, and e-bike traction inverters. Its 7 mOhm RDS(on) limits I2R losses during the high-current commutation phase, while the 80A continuous drain rating supports 5-10 kW peak motor power at low duty. The OptiMOS 5 platform's rugged body diode reduces dead-time requirements and shoot-through risk during PWM switching. The SuperSO8 5x6 footprint allows compact PCB layouts where two or four FETs fit on the same thermal copper island, sharing a single heatsink or cold plate.
Được đề xuất
Solar Micro-Inverter and String Inverter
In photovoltaic micro-inverters and residential string inverters, the BSC070N10NS5ATMA1 acts as the high-frequency switch in the DC-DC boost stage and the DC-AC inverter bridge. Its 100V VDS rating covers the maximum power-point voltage of 60-cell and 72-cell panels plus transient over-voltage events, while the OptiMOS 5 platform's low gate charge enables 100 kHz switching to shrink magnetics. Compared to planar MOSFET generations, the 44% output capacitance reduction cuts switching loss per cycle, raising CEC-weighted inverter efficiency by 0.3-0.5%. The exposed-pad package supports bottom-side cooling in sealed outdoor IP65 enclosures where airflow is restricted.
Được đề xuất
Hot-Swap and OR-ing Controllers in 48V Distribution
The BSC070N10NS5ATMA1 is used as the main pass-FET in 48V hot-swap controllers and redundant power OR-ing circuits in telecom and server backplanes. Its 7 mOhm RDS(on) keeps voltage drop across the FET below 350 mV at 50A load, reducing steady-state power dissipation. The 100V rating absorbs back-EMF transients from inductive loads during hot-plug events, while the part's ability to handle high inrush currents protects downstream bulk capacitors from stress. Paired with the BTS700201ESPXUMA2 or similar hot-swap controller IC, the BSC070N10NS5ATMA1 enables sub-millisecond fault isolation during short-circuit events.
Được đề xuất
Battery Management System Protection FET
Inside lithium-ion battery packs for power tools, e-bikes, and small EVs, the BSC070N10NS5ATMA1 functions as the charge/discharge protection MOSFET in series with the cell stack. Its 100V VDS rating suits 12S to 14S battery packs where the maximum pack voltage reaches 58.8V during charging, while the 7 mOhm RDS(on) minimizes loss during high-current discharge events. The OptiMOS 5 platform's low leakage current preserves battery shelf life, and the SuperSO8 5x6 footprint allows compact PCB layouts next to the cell-monitoring ICs. Combined with Infineon TLE9015 or similar battery-monitoring front ends, the BSC070N10NS5ATMA1 enables robust multi-layer fault protection.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC070N10NS5ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC027N10NS5ATMA1 | BSC118N10NSGATMA1 | BSC090N10NS5ATMA1 | BSC097N06NSATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same |
| VDS max | 100 V | 100 V | 100 V | 100 V | 60 V |
| RDS(on) max @ VGS=10V | 7 mOhm | 2.7 mOhm | 11.8 mOhm | 9 mOhm | 9.7 mOhm |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS (previous generation) |
| Operating Junction Temperature | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C |
Bảo phân biệt quan trọng
- Lowest RDS(on) in OptiMOS 5 100V SuperSO8 family at this price tier (vsBSC090N10NS5ATMA1)
- Higher VDS rating (100V) versus 60V OptiMOS alternatives (vsBSC097N06NSATMA1)
- 44% output capacitance reduction versus previous Infineon generation (vsBSC0501NSIATMA1)
Ghi chú thiết kế
Estimated: at ID=30A continuous and RDS(on)=7 mOhm at TA=25C (with 100C junction rise), conduction loss is roughly P=I^2*R = 30^2 * 0.007 = 6.3W. The PG-TDSON-8-7 package supports 83W at TC=25C but only 2.5W at TA=25C without PCB copper - so allocate at least 1 square inch of 2oz copper on the source pad side, or attach an external heatsink. Derate to 50% of max power for designs targeting 10-year operational life.
Minimize the high-current loop area between drain, the synchronous FET, and the output capacitor to reduce parasitic inductance that causes voltage overshoot and ringing on the switching node. Per Infineon's PG-TDSON-8-7 layout guidelines, place the input bypass capacitor within 5 mm of the drain pins, use 1-2 ohms of external gate resistance to control dV/dt, and connect the source-sense trace directly to the package source pins (2-3) rather than the exposed pad for accurate gate-drive feedback.
Do not exceed VGS=20V absolute maximum - even brief transients above 20V can rupture the gate oxide and cause catastrophic failure. Use a gate-driver IC with built-in VGS clamping or add external Zener diodes (15V) between gate and source for extra protection. Also, ensure the body diode is never operated in avalanche above its rated single-pulse energy; add a snubber or synchronous rectification control to channel reverse-recovery energy safely.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Lead-free reflow soldering compatible with JEDEC J-STD-020 MSL1. AEC-Q100 qualification is not applicable - the part is targeted at industrial, telecom, and consumer applications rather than automotive.
