BSC190N15NS3G - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon
MPN: BSC190N15NS3G ✓ Hoạt độngBSC190N15NS3G Tóm tắt
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-source voltage creates a conductive n-channel between drain and source, allowing current flow with very low conduction-loss. Power MOSFETs belong to the broader family of discrete semiconductors used for power management, sitting hierarchically under transistors, then discrete power devices. They are typically specified by R_DS(on), V_DS breakdown, Qg (gate charge), and Qrr (reverse-recovery charge), all of which govern switching and conduction efficiency.
OptiMOS 3 is Infineon's third-generation power-MOSFET platform that delivers an order-of-magnitude lower R_DS(on) per die area than earlier planar generations, achieved through a trench-gate architecture and refined epitaxial profile. For the BSC190N15NS3G, this translates to 19 mOhm max R_DS(on) at 10 V V_GS, allowing the device to replace older 200 V/40 A parts with the same PCB footprint while cutting conduction loss roughly in half.
Typical applications include 48 V telecom and server point-of-load (POL) converters, synchronous rectification in telecom brick supplies, motor-drive half-bridges for e-bike and industrial fans, hot-swap controllers in 48 V backplanes, and primary-side switching in solar micro-inverters. The device's low Qg and absence of body-diode reverse-recovery charge make it especially suitable for high-frequency hard-switched topologies up to several hundred kHz.
When laying out a PCB for the BSC190N15NS3G, place the gate-drive return and power-source return on the same continuous copper pour to minimize source-inductance-driven gate ringing. The exposed pad (pin 5) must be soldered to a sufficiently large copper area for thermal dissipation; without it, the device can dissipate only a fraction of its rated power before thermal shutdown.
This page synthesizes Infineon's OptiMOS 3 datasheet data, distributor pricing snapshots, cross-reference alternatives from DigiKey/Mouser, and practical design notes - content not consolidated anywhere else on the web for the BSC190N15NS3G.
Bộ thay thế dễ dàng lắp đặt cho BSC190N15NS3G — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC190N15NS3G (cùng hình factor và footprint) — khác nhau ở Package, Technology.
BSC190N15NS3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC190N15NS3G-G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
FDMS86200
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
FDMS86200DC
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
VBQA1152N
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC190N15NS3G Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 3 (trench-gate) |
| Drain-Source Voltage (V_DS max) | 150 V |
| Continuous Drain Current (I_D, Tc) | 50 A |
| Gate-Source Voltage (V_GS max) | +/-20 V |
| Static Drain-Source R_DS(on) max @ 10 V | 19 mOhm |
| Total Power Dissipation (P_D, Tc=25C) | 125 W |
| Nhiệt độ mối nối hoạt động | -55C to +150C |
| Hộp | SuperSO8 5x6 / PG-TDSON-8-1 |
| Kiểu lắp đặt | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) |
| Số chân | 8 |
Cấu hình chân BSC190N15NS3G
| Chân 1 | G — Gate (MOSFET gate input, drive with respect to source) |
| Chân 2 | D — Drain (internally bonded to pins 3 and 4 for low R_DS(on)) |
| Chân 3 | D — Drain (internally bonded to pin 2 and pin 4) |
| Chân 4 | D — Drain (internally bonded to pins 2 and 3) |
| Chân 5 | S — Source (large thermal/exposed pad on bottom of device) |
| Chân 6 | S — Source (internally bonded to pins 5, 7, 8) |
| Chân 7 | S — Source (internally bonded to pins 5, 6, 8) |
| Chân 8 | S — Source (internally bonded to pins 5, 6, 7) |
Khu vực hoạt động an toàn (DC, T_C = 25C)
Ứng dụng tiêu biểu
BSC190N15NS3G phù hợp cho 6 Áp dụngs: 48 V Telecom Point-of-Load (POL) Synchronous Rectification, Industrial Motor-Drive Half-Bridge (BLDC / PMSM), Solar Micro-Inverter Primary-Side Switching, 48 V Hot-Swap / ORing Controllers in Telecom Backplanes, Automotive 48 V Mild-Hybrid Auxiliary Loads, High-Frequency Isolated DC-DC Primary-Side Switch.
48 V Telecom Point-of-Load (POL) Synchronous Rectification
The BSC190N15NS3G fits 48 V-bus POL synchronous rectification with 150 V V_DS providing a 3x safety margin over nominal 48 V plus inductive transients. Its 19 mOhm R_DS(on) at V_GS=10 V keeps synchronous-rectifier conduction loss well under 1 W at 2-3 A outputs typical of POL bricks. The OptiMOS 3 low Qg (~30 nC typical) enables 300-500 kHz switching without excessive gate-drive loss. Compared to older 200 V planar parts, the trench-gate architecture roughly halves switching loss, reducing the heatsink requirement for 100-200 W brick converters.
Được đề xuất
Industrial Motor-Drive Half-Bridge (BLDC / PMSM)
The BSC190N15NS3G's 50 A continuous drain current (Tc=25C) and 150 V breakdown make it suitable for BLDC and PMSM motor half-bridges driving 24-48 V brushed/brushless motors in industrial fans, e-bikes, and small-EV traction. The SuperSO8 5x6 package's low R_theta_JA (~50 C/W on 1 sq-in. copper pour) keeps the junction under 125C at 100 W pulsed dissipation typical of PWM switching at 20-50 kHz. The OptiMOS 3 low Qrr reverse-recovery charge reduces dead-time losses and shoot-through risk during complementary switching.
Được đề xuất
Solar Micro-Inverter Primary-Side Switching
For sub-1 kW solar micro-inverters running from a 40-60 V panel input, the BSC190N15NS3G's 150 V V_DS absorbs boost-converter switching spikes up to 100 V with adequate margin. The 19 mOhm R_DS(on) keeps full-load conduction loss under 2 W at the 10-15 A primary-side currents typical of 600 W micro-inverters. OptiMOS 3 trench technology achieves higher figure-of-merit (R_DS(on) x Qg) than planar MOSFETs, enabling higher switching frequency and smaller magnetics - critical for the small-form-factor micro-inverter enclosure.
Được đề xuất
48 V Hot-Swap / ORing Controllers in Telecom Backplanes
In 48 V telecom backplane hot-swap and ORing applications, the BSC190N15NS3G serves as the switching element that interrupts load current during board insertion. The 150 V V_DS handles 48 V nominal plus 100 V transient with margin, while 50 A continuous current meets typical 30-40 A backplane slot ratings. The 19 mOhm R_DS(on) keeps full-load voltage drop below 1 V, preserving downstream DC-DC converter headroom. The SuperSO8 footprint allows direct footprint compatibility with established telecom ORing designs.
Được đề xuất
Automotive 48 V Mild-Hybrid Auxiliary Loads
Although not AEC-Q101 qualified by Infineon for this exact SKU, the BSC190N15NS3G is widely used in non-safety automotive 48 V mild-hybrid auxiliary loads (cooling fans, water pumps, auxiliary DC-DC stages). Its 150 V breakdown tolerates 48 V load-dump transients up to ~80 V, and 50 A continuous current drives 2-3 kW auxiliary inverters. The OptiMOS 3 platform shares process technology with Infineon's automotive-qualified parts, giving designers confidence for non-safety subsystems where full Q101 qualification is not mandated.
Được đề xuất
High-Frequency Isolated DC-DC Primary-Side Switch
The BSC190N15NS3G is well-matched to isolated half-bridge or full-bridge primary-side switch positions in 48 V-input telecom bricks, where its 150 V V_DS handles the reflected 80-100 V rail and low Qg enables 200-500 kHz operation. The trench-gate OptiMOS 3 architecture's low Qrr eliminates the body-diode reverse-recovery loss that plagues planar MOSFETs in hard-switched bridge topologies. Power dissipation at 5-10 A primary-side current is dominated by conduction loss; the 19 mOhm R_DS(on) keeps this under 2 W even at full load.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC190N15NS3G — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC190N15NS3GATMA1 | BSC190N15NS3G-G | FDMS86200 | FDMS86200DC | VBQA1152N |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | onsemi | VBsemi |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (5x6) - same | PG-TDSON-8-1 (Dual-Cool 5x6) - same | DFN8 (5x6) - pin-to-pin |
| Drain-Source Voltage V_DS (V) | 150 | 150 | 150 | 150 | 150 | 150 |
| R_DS(on) max @ 10 V (mOhm) | 19 | 19 | 19 | ~25 | ~22 | 15.8 |
| Technology | OptiMOS 3 (trench) | OptiMOS 3 (trench) | OptiMOS 3 (trench) | onsemi N-channel trench | onsemi N-channel trench (dual-cool) | VBsemi trench |
| Pin-to-Pin Compatible | Yes (baseline) | Yes (identical die) | Yes (identical die) | Yes (per GlobalSpec cross-ref) | Yes (per GlobalSpec cross-ref) | Yes (per VBsemi datasheet) |
Bảo phân biệt quan trọng
- OptiMOS 3 trench technology achieves industry-leading figure-of-merit (FOM = R_DS(on) x Qg) for 150 V class (vsFDMS86200 (onsemi))
- Authorized Infineon factory-pack availability with full lot traceability (vsTECH PUBLIC BSC190N15NS3G-TP (third-party distributor at LCSC))
- Lower R_DS(on) than the onsemi FDMS86200 alternative (vsVBQA1152N (VBsemi))
Ghi chú thiết kế
Estimated: at P_D = 10 W and R_theta_JA = 50 C/W (1 sq-in. copper pour, still air), the junction temperature rise above ambient is ~50C; at full 125 W rated dissipation with adequate heatsinking the die reaches the 150C junction maximum. The exposed pad (pin 5) must be soldered to a continuous copper pour of at least 1 sq. inch on top and bottom layers, stitched with thermal vias, to achieve the datasheet R_theta_JA. Without the exposed-pad connection, sustained power must be derated to ~5 W to stay below Tj=125C at 25C ambient.
Place the gate-driver return (gate-pull-down component ground) and the power-source return on the same continuous copper pour to minimize source-inductance-driven gate ringing. Keep the gate-loop area under 0.5 sq. cm and use a 10-100 ohm gate-source resistor to damp V_GS oscillations. Add a TVS or 100 ohm gate-source resistor to prevent V_GS from exceeding +/-20 V during drain-voltage transients (dV/dt can couple through C_gd and lift the gate above threshold).
Do not operate the BSC190N15NS3G in linear mode - the SOA curve shown on the datasheet is for pulsed/DC switching, not DC linear operation. At V_DS = 75 V and I_D = 1.7 A the device is at the edge of the SOA; sustained linear operation at high V_DS x I_D will rapidly exceed thermal limits. For linear applications (e.g., hot-swap, e-fuse) use a dedicated linear-mode MOSFET. Also verify V_GS never exceeds +/-20 V; electrostatic damage on the gate is the most common failure mode for this part.
The SuperSO8 5x6 footprint is pin-compatible with PowerPAK SO-8 from Vishay and the onsemi TDSON-8 family, enabling drop-in second sourcing from FDMS86200. Use a 2-oz copper pour on top and bottom layers stitched with 0.3 mm thermal vias (8-12 vias under the exposed pad) for optimal thermal performance. Solder paste stencil aperture of 1:1 ratio on the thermal pad with multiple smaller openings (window-pane pattern) reduces solder voiding.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Lead-free terminal finish ('-G' suffix denotes RoHS-compliant plating). Halogen-free per OptiMOS 3 family datasheet declaration. NOT AEC-Q100/Q101 qualified - this exact part is industrial/consumer grade; for automotive safety applications use an Infineon AEC-Q101 qualified OptiMOS variant.
