BSZ068N06NSATMA1 - 60V, 6.8mΩ N-Channel OptiMOS 5 MOSFET | Infineon
MPN: BSZ068N06NSATMA1 ✓ Hoạt độngBSZ068N06NSATMA1 Tóm tắt
What is an N-channel power MOSFET? A metal-oxide-semiconductor field-effect transistor (MOSFET) is the workhorse switching device in modern power electronics. An N-channel MOSFET conducts electrons from drain to source when a positive gate-source voltage is applied. Low-voltage N-channel MOSFETs such as the BSZ068N06NS family form the synchronous-rectifier and high-side/low-side switch stages in buck converters, half-bridges, and full-bridges used in computing, telecom, and industrial power systems.
Key features of the BSZ068N06NSATMA1 include 40 % lower RDS(on) than comparable legacy devices, a 40 % improvement in figure of merit (FOM = RDS(on) × Qg) over similar parts, RoHS compliance with halogen-free construction, and MSL1 moisture-sensitivity rating. The device is optimized for synchronous rectification, allowing 12 V and 24 V bus converters to achieve higher system efficiency than with previous-generation MOSFETs.
The OptiMOS 5 process technology uses a trench-gate structure with an advanced epitaxial layer to minimize both conduction loss and switching loss. Compared with OptiMOS 3 predecessors, the BSZ068N06NSATMA1 halves conduction losses at full load and reduces gate charge by 30 %, enabling switching frequencies above 500 kHz without excessive driver loss.
Typical applications include synchronous rectification in 12 V-48 V DC-DC converters, high-side/low-side switching in motor drives, OR-ing FETs in redundant power supplies, battery management for power tools and e-bikes, and hot-swap controllers in telecom boards. In each case, the 6.8 mΩ RDS(on) reduces I²R losses while the small TSDSON footprint saves PCB area.
When designing with this MOSFET, ensure the gate driver can supply the miller plateau current (typically 4-6 A peak) and that the PCB layout minimizes parasitic source inductance to limit ringing. A 1 Ω gate resistor is recommended to dampen oscillations in low-side switch positions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that the bare manufacturer datasheet does not aggregate, helping engineers evaluate sourcing, second-source, and thermal trade-offs in a single view.
Bộ thay thế dễ dàng lắp đặt cho BSZ068N06NSATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSZ068N06NSATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Operating Temperature Range, FET Type, Package, Drain-Source Voltage (VDS).
ISZ068N06NM6ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSZ068N06NSATMA2
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPB110P06LMATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC076N04NDATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC015N06NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IQDH35N03LM5SCATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSZ068N06NSATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench-gate) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc) | 40 A |
| On-Resistance RDS(on) max | 6.8 mΩ @ VGS=10 V |
| Power Dissipation (Ta) | 2.1 W |
| Power Dissipation (Tc) | 46 W |
| Khoảng nhiệt độ hoạt động | -55 °C to +150 °C |
| Hộp | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | MSL1 |
| RoHS / Halogen-Free | RoHS compliant, halogen-free |
Cấu hình chân BSZ068N06NSATMA1
| Chân 1 | S — Source (pin 1) |
| Chân 2 | S — Source (pin 2) |
| Chân 3 | S — Source (pin 3) |
| Chân 4 | G — Gate |
| Chân 5 | D — Drain (pin 5) |
| Chân 6 | D — Drain (pin 6) |
| Chân 7 | D — Drain (pin 7) |
| Chân 8 | D — Drain (pin 8) |
BSZ068N06NSATMA1 Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
BSZ068N06NSATMA1 phù hợp cho 6 Áp dụngs: Synchronous Rectification in 12 V DC-DC Converters, Brushless DC (BLDC) Motor Drive Half-Bridges, OR-ing FET for Redundant Power Supplies, Battery Management for Power Tools and E-Bikes, Hot-Swap Controller Switch, Automotive 12 V / 24 V Load Switching.
Synchronous Rectification in 12 V DC-DC Converters
The BSZ068N06NSATMA1 is the textbook synchronous-rectifier FET for 12 V point-of-load and intermediate-bus converters. Its 60 V VDS provides ample margin for 12 V transients and ringing spikes, while the 6.8 mΩ RDS(on) keeps I²R conduction losses under 1 % at 20 A continuous load. Placed on the low-side switch position with a 10 V gate drive, it replaces Schottky diodes to raise peak efficiency from 90 % (diode) to 96 %+ (MOSFET). The TSDSON-8 package's drain-down thermal pad routes heat directly into the inner PCB copper layers, supporting 2-3 W dissipation without an external heatsink in standard 4-layer boards.
Được đề xuất
Brushless DC (BLDC) Motor Drive Half-Bridges
In 24 V and 48 V BLDC motor drives, the BSZ068N06NSATMA1 serves as either the high-side or low-side switch in a 3-phase half-bridge inverter. Its 46 W power dissipation at TC supports continuous motor currents up to 40 A, while the 6.8 mΩ RDS(on) minimizes thermal rise during locked-rotor stalls. The OptiMOS 5 trench-gate structure achieves sub-30 ns switching, reducing dead-time loss in 50 kHz PWM motor control. Paired with a gate driver such as 6EDL04N02PR or IRS2304SPBF, it forms the per-phase power stage for industrial automation, e-bike traction, and power-tool motor control.
Được đề xuất
OR-ing FET for Redundant Power Supplies
The BSZ068N06NSATMA1 is well-suited as an OR-ing FET in N+1 redundant 12 V and 24 V power systems used in telecom, data-center, and industrial control equipment. Its 60 V VDS handles 24 V bus transients plus reverse-voltage spikes from load dump events, and the 6.8 mΩ RDS(on) dissipates only 0.7 W at 10 A continuous load (vs 2 W for Schottky OR-ing). When paired with an OR-ing controller such as BTS710336ESAXUMA1 or a discrete amplifier, the FET prevents reverse-current flow during parallel-PSU fault conditions, supporting hot-swap and live insertion on the backplane.
Được đề xuất
Battery Management for Power Tools and E-Bikes
For 18 V / 36 V / 48 V battery management systems in cordless power tools and e-bikes, the BSZ068N06NSATMA1 functions as the protection FET in the discharge path or as the high-side switch in the motor inverter. The 60 V VDS comfortably exceeds 48 V Li-ion pack voltages including full-charge tolerance, and the 6.8 mΩ RDS(on) reduces I²R heating during 30 A peak tool-load bursts. The 150 °C maximum junction temperature allows short-duration overload without tripping thermal protection. In BMS topologies, the device pairs with a battery monitor such as TLE9012DQU or TLF44773LAXUMA1.
Được đề xuất
Hot-Swap Controller Switch
In 12 V and 24 V hot-swap applications, the BSZ068N06NSATMA1 serves as the series pass element that isolates a live backplane from inrush current during board insertion. The 60 V VDS tolerates ringing during plug-in events, while the 6.8 mΩ RDS(on) keeps steady-state dissipation below 1 W at 10 A load. The part's SOA rating supports 100 % rated current at TC for hot-swap surge profiles, and the small TSDSON-8 footprint fits next to the hot-swap controller such as BTS7003A1EPWXUMA2 or ISL6141 on PCIe, AdvancedTCA, and PXI backplanes.
Được đề xuất
Automotive 12 V / 24 V Load Switching
The BSZ068N06NSATMA1 is suitable for automotive body-electronics load switching at 12 V and 24 V, including headlamp drivers, fan controls, and accessory power switches. The 60 V VDS handles 24 V commercial-vehicle bus plus load-dump transients (with TVS clamping), and the 6.8 mΩ RDS(on) reduces thermal stress in steady-state. While the standard part is not AEC-Q100 qualified, designers select it for non-safety body-electronics modules; safety-critical loads require the Q1-graded variant such as IAUC60N04S6L030HATMA1. Pair with smart switches BTS710336ESAXUMA1 or BTS70402EPGXUMA1 for diagnostic feedback.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSZ068N06NSATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | ISZ068N06NM6ATMA1 | BSC076N04NDATMA1 | ISC015N06NM5ATMA1 | IPB110P06LMATMA1 |
|---|---|---|---|---|---|
| Package | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) | PG-TSDSON-8 |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 40 V | 60 V | 30 V |
| RDS(on) max @ 10 V VGS | 6.8 mΩ | 6.8 mΩ | 7.6 mΩ | 1.5 mΩ | 3.5 mΩ |
| Continuous Drain Current (Tc) | 40 A | 40 A | 40 A | 60 A | 80 A |
| Technology | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Channel Polarity | N-channel | N-channel | N-channel | N-channel | P-channel |
| Power Dissipation (Tc) | 46 W | 46 W | 46 W | 50 W | 46 W |
| Unit Price @ 1000 pcs (USD, as of 2026-09-15) | 0.62 | 0.75 | 0.55 | 1.10 | 0.95 |
Bảo phân biệt quan trọng
- Industry-leading RDS(on) × Qg figure of merit at 60 V in TSDSON-8 footprint (vsISC015N06NM5ATMA1)
- OptiMOS 5 technology generation (vsBSZ0901NS (older OptiMOS 3 family))
- Standard 60 V VDS rating optimized for 12 V/24 V industrial buses (vsIPA083N10N5 (100 V part))
Ghi chú thiết kế
The PG-TSDSON-8-FL package has a typical RθJA of 50 °C/W on a 1 oz copper 1 square-inch pad. At 2 W continuous dissipation (e.g. 20 A × 6.8 mΩ × 1.5 for thermal margin), junction temperature rises 100 °C above ambient, exceeding the 150 °C absolute maximum at TA=50 °C. For designs above 1.5 W sustained, use a 4-layer PCB with 2 oz copper and thermal vias under the drain pad. Estimated: assumes single-layer copper spreader on FR4.
Place the gate driver within 5 mm of the gate pin to minimize parasitic inductance in the gate loop. Use a 1 Ω series gate resistor to dampen Miller-plateau ringing. The source pin should connect directly to the local power-ground via multiple vias to limit parasitic source inductance (target <2 nH), which otherwise degrades switching loss and creates voltage overshoot during turn-off.
Never exceed VGS of ±20 V (absolute max). Do not operate the part without VGS reaching at least 6 V, which is the typical Miller plateau - lower drive voltage forces the FET into its linear region with 10× higher RDS(on). For half-bridge configurations, insert 100 ns of dead time to prevent shoot-through. Ensure the gate-drive IC can source/sink 4 A peak for the Qg charge, otherwise turn-on/off slows and switching loss rises.
Route the high-current source and drain paths on the top layer with minimum 1 oz copper pour, never as thin traces. Stitch the inner ground layer directly under the TSDSON-8 thermal pad with a 3x3 grid of 0.3 mm thermal vias to extract heat into the inner copper plane. Avoid routing sensitive analog signals under the switching node - the high dv/dt couples capacitively into nearby traces.
Thông tin tuân thủ
RoHS compliant and halogen-free per Infineon OptiMOS 5 datasheet family. MSL1 rated. Not AEC-Q100 qualified; for automotive safety-critical applications use AEC-Q100 graded variants such as IAUC60N04S6L030HATMA1.
