CGD65B130SH2 - 650V, 12A GaN HEMT, 8-DFN | Cambridge GaN
MPN: CGD65B130SH2 ✓ Hoạt độngCGD65B130SH2 Tóm tắt
A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap power transistor whose two-dimensional electron gas (2DEG) channel delivers far higher switching speed, lower gate charge, and lower on-resistance per area than silicon MOSFETs of the same voltage class. The CGD65B130SH2 belongs to the power semiconductor family, sitting in the power management hierarchy between low-voltage logic MOSFETs (sub-200V) and high-voltage SiC MOSFETs (typically >900V). It is engineered as a normally-off enhancement-mode device for easy drop-in replacement of silicon superjunction MOSFETs in 400 V and 500 V bus designs.
Per the manufacturer datasheet, the CGD65B130SH2 specifies 12 A continuous drain current at 25°C, total gate charge Qg = 1.9 nC, gate threshold voltage of 2.2 V to 4.2 V, and RDS(on) range of 130 to 350 mΩ across drive and temperature conditions. The 650 V rating provides substantial derating margin for universal-input PFC stages operating from rectified 230 VAC mains, where bus voltages reach 400 V. The 8-DFN (5x6) package with bottom-side cooling pad supports high-density surface-mount reflow and reduces parasitic source inductance, which is critical for clean switching at >100 kHz.
The architecture exploits GaN's high critical electric field and 2DEG channel mobility to achieve low conduction and switching losses simultaneously, enabling hard-switched topologies such as totem-pole PFC and LLC converters to operate at multi-hundred-kHz frequencies without the thermal penalties imposed by silicon superjunction MOSFETs. The integrated current-sense and NL³ protection circuits reduce external component count in motor-drive and synchronous-rectification applications.
Typical applications include AC-DC and DC-DC converters, totem-pole bridgeless PFC front ends, server and telecom switched-mode power supplies, photovoltaic micro-inverters and string inverters, on-board chargers for electric vehicles, motor drives, and class-D audio amplifiers.
When designing with this part, confirm gate-drive voltage of 12 V is available and place the gate drive loop return directly under the source connection. Decouple the gate-driver supply locally and follow Cambridge GaN Devices' reference layout for the 8-DFN (5x6) footprint.
This page consolidates distributor pricing, drop-in alternatives, and application guidance beyond what the manufacturer datasheet alone provides, helping engineers shorten their selection cycle for 650 V GaN power stages.
Bộ thay thế dễ dàng lắp đặt cho CGD65B130SH2 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với CGD65B130SH2 (cùng hình factor và footprint) — khác nhau ở Package, Transistor Type.
CGD65B130S2
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →CGD65B130SH
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
CGD65B130SH2-Q
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
CGD65B130SH2 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Cambridge GaN Devices |
| Part Number | CGD65B130SH2 |
| Kiểu transitor | N-Channel GaN HEMT (Enhancement Mode) |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) at 25°C | 12 A |
| On-Resistance RDS(on) (typical, per product page) | 55 mΩ |
| On-Resistance RDS(on) (max at 900 mA / 12 V) | 182 mΩ |
| On-Resistance Range (datasheet) | 130 to 350 mΩ |
| Gate Threshold Voltage VGS(th) | 2.2 V to 4.2 V |
| Total Gate Charge Qg | 1.9 nC |
| Technology | GaN-on-silicon (ICeGaN®) |
| Integrated Features | ICeGaN® gate, Current Sense, NL³ protection circuit |
| Hộp | 8-DFN (5x6 mm), Surface Mount |
| Kiểu lắp đặt | Surface Mount |
| Operating Mode | Enhancement-mode (normally-off) |
| Compliance / RoHS | Compliant (per DigiKey listing) |
Cấu hình chân CGD65B130SH2
| Chân 1 | Drain — Power drain terminal (per datasheet package diagram) |
| Chân 2 | Drain — Power drain terminal (per datasheet package diagram) |
| Chân 3 | Source — Power source terminal (per datasheet package diagram) |
| Chân 4 | Source — Power source terminal (per datasheet package diagram) |
| Chân 5 | Source — Power source terminal (per datasheet package diagram) |
| Chân 6 | Source — Power source terminal (per datasheet package diagram) |
| Chân 7 | Gate — ICeGaN gate drive input (per datasheet) |
| Chân 8 | Source — Power source terminal / thermal pad return (per datasheet package diagram) |
Khu vực hoạt động an toàn (estimated envelope)
Ứng dụng tiêu biểu
CGD65B130SH2 phù hợp cho 6 Áp dụngs: Totem-Pole Bridgeless PFC, Server / Telecom SMPS, Photovoltaic String Inverters, EV On-Board Chargers, Brushless DC Motor Drives, Class-D Audio Amplifiers.
Totem-Pole Bridgeless PFC
The CGD65B130SH2 is a primary switch candidate for totem-pole bridgeless PFC stages fed from 230 VAC mains. Its 650 V VDS rating provides comfortable headroom above the 400 V rectified bus, and the 1.9 nC total gate charge enables switching frequencies well above 100 kHz, shrinking the PFC inductor size and improving power density. The lack of body-diode reverse-recovery charge removes the cross-conduction losses that plague silicon superjunction implementations, while the on-chip current-sense output supports cycle-by-cycle current-mode control. Compared with a silicon 600 V/20 A MOSFET, the CGD65B130SH2 in the same 8-DFN footprint cuts switching losses in half and eliminates diode bridge losses entirely.
Được đề xuất
Server / Telecom SMPS
For 1-3 kW 48 V output server and telecom switched-mode power supplies, the CGD65B130SH2 drives the primary side of an LLC converter where its 650 V rating is over-specified for 380-400 VDC telecom bus inputs. The 1.9 nC Qg allows the LLC to run at 200 kHz+, shrinking the resonant tank and the transformer footprint. The NL³ protection circuit on the CGD65B130SH2 cuts over-current shutdown time and reduces the host controller interrupt latency, which matters when designing for 80 PLUS Titanium efficiency targets. The 8-DFN (5x6) footprint is footprint-compatible with the silicon 600 V superjunction MOSFETs that the server PSU community has historically used, easing migration.
Được đề xuất
Photovoltaic String Inverters
In 5-10 kW residential and commercial photovoltaic string inverters, the CGD65B130SH2 forms the boost and DC-DC converter switches, with multiple parts in parallel possible thanks to its positive temperature coefficient on-resistance. The 650 V breakdown rating is suitable for 600 VDC max solar input strings, and the low RDS(on) of 55 mΩ (typical) limits I²R conduction losses during peak solar generation. The integrated current-sense output of the CGD65B130SH2 simplifies MPPT algorithm implementation by providing an internal drain-current sense that does not require an external shunt or sense-FET circuit.
Được đề xuất
EV On-Board Chargers
The CGD65B130SH2 is suitable for 6.6-22 kW EV on-board charger modules where 400 V and 800 V powertrain buses are charged from 230 VAC mains. The 650 V VDS of the CGD65B130SH2 covers the rectified 400 V bus with margin for a 6.6 kW OBC, and a pair of these parts in a totem-pole arrangement handles the full input current at high switching frequency, reducing the size of the PFC inductor and the DC-DC transformer. Cambridge GaN Devices' automotive-qualified variant (CGD65B130SH2-Q, same 8-DFN footprint) is recommended for AEC-Q100 application environments.
Được đề xuất
Brushless DC Motor Drives
The CGD65B130SH2 can replace silicon IGBTs and MOSFETs in 400-500 V brushless DC motor drives for industrial automation and e-mobility. Its low Qg supports 50-100 kHz PWM frequencies, which shrink the motor's acoustic signature and reduce the torque ripple. The 12 A continuous current rating covers fractional-horsepower industrial BLDC servos up to 1 kW, while the integrated current-sense of the CGD65B130SH2 simplifies FOC algorithm implementation by feeding the controller's shunt-free current path.
Được đề xuất
Class-D Audio Amplifiers
In 200-500 W class-D audio amplifiers, the CGD65B130SH2 is used in the output half-bridge where its low gate charge (1.9 nC) and absence of reverse-recovery charge enable 500 kHz+ switching frequencies. These high PWM frequencies move the LC filter cutoff above the audible band and let designers use smaller filter inductors, reducing amplifier size and weight. The 650 V rating of the CGD65B130SH2 covers +/-100 V audio rails with margin, and the 8-DFN (5x6) footprint allows four devices to be paralleled on a single PCB for higher-power multi-channel amplifiers.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho CGD65B130SH2 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | CGD65B130S2 | CGD65B130SH | CGD65B130SH2-Q |
|---|---|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices | Cambridge GaN Devices |
| Package | 8-DFN (5x6) | 8-DFN (5x6) - same | 8-DFN (5x6) - same | 8-DFN (5x6) - same |
| Drain-Source Voltage VDS | 650 V | 650 V | 650 V | 650 V |
| Continuous Drain Current (25°C) | 12 A | 12 A | 12 A | 12 A |
| RDS(on) typical | 55 mΩ | 55 mΩ | 55 mΩ | 55 mΩ |
| Gate Threshold VGS(th) | 2.2 V to 4.2 V | 2.2 V to 4.2 V | 2.2 V to 4.2 V | 2.2 V to 4.2 V |
| Total Gate Charge Qg | 1.9 nC | 1.9 nC | 1.9 nC | 1.9 nC |
| Integrated Gate Driver | ICeGaN® (integrated) | ICeGaN® (integrated) | ICeGaN® (integrated) | ICeGaN® (integrated) |
| Automotive Qualification | Not qualified (commercial) | Not qualified | Not qualified | AEC-Q100 qualified (automotive) |
Bảo phân biệt quan trọng
- ICeGaN® integrated gate driver and current sense eliminate external driver ICs (vsDiscrete 650 V GaN HEMTs without integrated driver)
- 55 mΩ typical RDS(on) at 650 V in 8-DFN (5x6) (vsSilicon 600 V superjunction MOSFET in TO-220 or similar package)
- Automotive-qualified variant available in same footprint (vsCommercial-grade same-die alternatives)
Ghi chú thiết kế
The 8-DFN (5x6) package has a bottom-side cooling pad that doubles as the primary source terminal. Place at least 8 thermal vias in this pad (0.3 mm drill, 0.6 mm pitch) to a continuous inner-layer copper pour sized for the application's dissipation. The gate-drive loop return must connect directly under the source bond to keep the gate-loop inductance under 5 nH - critical because the CGD65B130SH2's 1.9 nC Qg at 12 V transitions in ~5 ns at moderate drive strengths, generating V = L*di/dt spikes that can false-trigger the gate if loop inductance is too high. Follow the Cambridge GaN Devices reference layout in the application note.
Estimated: at 12 A continuous drain current, 25°C ambient, and worst-case RDS(on) of 350 mΩ (datasheet max), the CGD65B130SH2 dissipates roughly P = I²R = 12² × 0.35 = ~50 W if forced to the datasheet maximum. Real applications run at 50-150 mΩ RDS(on) typical, so dissipation drops to 7-22 W. A 50x50 mm FR4 PCB with 2 oz copper on four layers holds theta_JA near 30 C/W, giving ~210°C junction rise at 7 W - heatsink or thermal via array required above ~3 W dissipation.
The CGD65B130SH2 is enhancement-mode (normally-off) but does not have a silicon-MOSFET-style body diode - it uses GaN's intrinsic channel reverse-conduction. Do not parallel anti-parallel silicon diodes across it as you would a silicon MOSFET; the body diode forward voltage (~1.5 V) is higher than silicon's. For totem-pole PFC dead-time control, schedule the synchronous FET turn-on within 50 ns of turn-off to avoid the high body-diode drop penalty. Also do not exceed 12 V VGS; permanent oxide damage occurs above +15 V VGS, and below 0 V VGS the gate is not robust.
Thông tin tuân thủ
RoHS compliance confirmed per DigiKey product listing. AEC-Q100 qualification applies to the CGD65B130SH2-Q variant only; the standard CGD65B130SH2 is not AEC-Q100 qualified. REACH, halogen-free status, and conflict-minerals reporting not explicitly listed in the verified data.
