CGD65C025SP2 - 650V 25mΩ GaN HEMT 60A | Cambridge GaN Devices
MPN: CGD65C025SP2 ✓ Hoạt độngCGD65C025SP2 Tóm tắt
A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap power transistor that uses a two-dimensional electron gas channel formed at an AlGaN/GaN heterojunction to deliver far higher switching speeds and lower specific on-resistance than equivalently rated silicon MOSFETs. Within the broader power semiconductor hierarchy, the GaN HEMT sits alongside Si MOSFETs, SiC MOSFETs, and IGBTs as the high-frequency, high-efficiency option for sub-kilowatt to several-kilowatt switched-mode power supplies, motor drives, and photovoltaic inverters.
Key features highlighted in the Cambridge GaN Devices preliminary datasheet include 650 V drain-source breakdown, a typical R_DS(on) of 25 mΩ, 60 A continuous drain current capability, a wettable-flank BHDFN-9-1 surface-mount package for optical-inspection-friendly assembly, and fast turn-on characteristics that enable high-frequency operation and easy paralleling of multiple devices for higher current. The normally-off ICeGaN gate removes the negative-bias supply typically required by cascode or depletion-mode GaN implementations, simplifying gate-driver design.
Typical applications span telecom and server AC-DC and DC-DC converters, USB-PD and high-density laptop adapters, on-board chargers for electric vehicles, photovoltaic micro-inverters and string inverters, motor-drive front-end PFC stages, and Class-D audio amplifiers. The combination of 650 V rating and 25 mΩ R_DS(on) also makes this part attractive for 400 V bus architectures in EV traction inverters and energy-storage systems.
When designing with the CGD65C025SP2, prioritize keeping the power loop inductance below the datasheet-recommended budget by minimizing the source-return copper area between the device and the DC-link capacitance, and follow the manufacturer's recommended gate-drive voltage window for ICeGaN to avoid overdrive. This preliminary datasheet page synthesizes distributor availability data, drop-in alternatives, and PCB design considerations drawn together for engineers evaluating GaN for high-density power conversion.
Bộ thay thế dễ dàng lắp đặt cho CGD65C025SP2 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với CGD65C025SP2 (cùng hình factor và footprint) — khác nhau ở Gate Technology, Manufacturer, Operating Mode, Package.
CGD65A055S2
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →CGD65C025SP1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
CGD65C025SP2 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Cambridge GaN Devices (CGD) |
| Part Number | CGD65C025SP2 |
| Kiểu transitor | N-Channel GaN HEMT (enhancement-mode, normally-off) |
| Gate Technology | ICeGaN® (no negative gate supply required) |
| Drain-Source Voltage (V_DS max) | 650 V |
| Continuous Drain Current (I_D) | 60 A |
| On-Resistance (R_DS(on)) | 25 mΩ (typical) |
| Hộp | BHDFN-9-1 (surface-mount, wettable flank) |
| Kiểu lắp đặt | Surface Mount |
| Configuration | Single N-Channel |
| Operating Mode | Enhancement mode (normally-off) |
| Material | GaN-on-Si (Gallium Nitride on Silicon) |
| Switching Frequency Suitability | High frequency (fast turn-on, easy paralleling) |
| Datasheet Status | Preliminary (May 2024) |
| AEC-Q100 Qualification | unknown |
Cấu hình chân CGD65C025SP2
| Chân 1 | Source — Power source terminal of the GaN HEMT (high-current return) |
| Chân 2 | Gate — ICeGaN gate input (no negative drive required) |
| Chân 3 | Source — Source pad (Kelvin pin, connect to gate-driver return) |
| Chân 4 | Drain — Power drain terminal (high-voltage switching node) |
| Chân 5 | Source — Source bonding pad |
| Chân 6 | Source — Source bonding pad |
| Chân 7 | Source — Source bonding pad |
| Chân 8 | Source — Source bonding pad |
| Chân 9 | Source — Source bonding pad |
Khu vực hoạt động an toàn (estimated from 650 V / 60 A ratings)
Ứng dụng tiêu biểu
CGD65C025SP2 phù hợp cho 6 Áp dụngs: Totem-Pole Bridgeless PFC for Server & Telecom Power Supplies, High-Density USB-PD and Laptop Adapters (65-240 W), On-Board Charger and EV Auxiliary DC-DC Converters, Photovoltaic Micro-Inverters and String Inverters, Industrial Motor-Drive PFC and Front-End Rectifiers, Class-D Audio Amplifier Output Stage.
Totem-Pole Bridgeless PFC for Server & Telecom Power Supplies
The CGD65C025SP2's 650 V breakdown voltage and 25 mΩ R_DS(on) make it well-suited to continuous-conduction-mode totem-pole PFC front ends used in 1-3 kW server and telecom rectifiers. Placed in the slow leg / fast leg of the bridgeless bridge, its near-zero reverse-recovery charge (Q_RR) eliminates the diode-bridge conduction losses and removes the need for an antiparallel silicon diode that would otherwise limit high-frequency operation above ~50 kHz. The ICeGaN normally-off gate means a single 12 V supply rail from an isolated gate driver is sufficient, removing the negative-bias supply that depletion-mode or cascode GaN typically require. Designers should pair the part with a UCC25640x or similar CCM totem-pole controller and keep the high-side/low-side power loop inductance below 5 nH by using a vertically stacked DC-link film/ceramic combo.
Được đề xuất
High-Density USB-PD and Laptop Adapters (65-240 W)
Compact USB-PD adapters in the 65-240 W range benefit directly from the high switching frequency enabled by GaN. The CGD65C025SP2's 25 mΩ R_DS(on) and 650 V rating allow flyback, active-clamp flyback, or AHB topologies to run at 200-400 kHz versus the 65-100 kHz typical of silicon MOSFET designs, shrinking the transformer, output filter, and heatsink. The normally-off ICeGaN gate simplifies the primary-side start-up and bias architecture so that an auxiliary winding can be eliminated. Designers should leverage the BHDFN-9-1 wettable flank for high-reliability assembly of the primary-side power stage and verify creepage/clearance between the drain pad and adjacent low-voltage return tracks.
Được đề xuất
On-Board Charger and EV Auxiliary DC-DC Converters
The 650 V drain-source breakdown of the CGD65C025SP2 provides ample margin above the 400 V EV bus, comfortably handling DC-link ringing during fast turn-on transitions. Its 25 mΩ on-resistance keeps conduction loss within budget at the 30-100 A load levels typical of 6.6-22 kW on-board chargers and auxiliary DC-DC converters. The BHDFN-9-1 surface-mount form factor supports the top-cooled or double-sided cooling layouts favored in OBC designs where the power module sits above an aluminum cold plate. Designers should validate AEC-Q100 grade availability and derate thermal performance to the 105 °C coolant temperature loop commonly used in EV thermal systems.
Được đề xuất
Photovoltaic Micro-Inverters and String Inverters
In photovoltaic micro-inverters and 5-15 kW string inverters, the CGD65C025SP2 fits the boost PFC stage or the high-frequency primary side of the isolated DC-DC converter. Its 650 V rating supports the 600 V peak rectified 230 VAC line without additional clamping, while the 25 mΩ R_DS(on) keeps peak efficiency above 98 percent in 3-10 kW residential PV inverters. The normally-off ICeGaN gate and easy paralleling make module-level inverter stacks straightforward, allowing two devices to share a switching node without the gate-driver complexity of cascode GaN. Adequate DC-link capacitance placement and multilayer PCB stack-up are essential to keep the 1-2 nH power-loop inductance that high-frequency GaN switching demands.
Được đề xuất
Industrial Motor-Drive PFC and Front-End Rectifiers
Industrial servo drives and variable-frequency motor drives commonly place a PFC stage ahead of the DC bus to comply with harmonic standards (EN 61000-3-2). The CGD65C025SP2's combination of 650 V breakdown, 25 mΩ R_DS(on), and high switching speed allows the PFC stage to operate above 100 kHz with maintained efficiency, shrinking the boost inductor and EMI filter. The normally-off ICeGaN gate means existing 15 V gate-drive signals from industrial motor-drive controllers can be used without negative-bias rails, easing migration from silicon IGBT front-ends. Designers should keep high dv/dt nodes away from analog feedback traces and use 4-layer FR4 with an uninterrupted return plane under the power stage.
Được đề xuất
Class-D Audio Amplifier Output Stage
For high-power Class-D audio amplifiers above 500 W, the CGD65C025SP2 can replace the silicon MOSFET pair in the half-bridge output stage, switching above 1 MHz to push switching noise out of the audio band and reduce the output LC filter volume. The 650 V rating supports high-rail ±200 V BTL designs, and the 25 mΩ R_DS(on) keeps the 0.1% THD thermal envelope manageable in 1 kW monoblock subwoofer and PA amplifiers. Easy paralleling lets two devices share each half-bridge leg for 2-3 kW PA applications. Care should be taken to demagnetize the LC filter using Zobel networks and to provide ground isolation between the power stage and the audio-input ground reference to prevent audio-frequency hum loops.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho CGD65C025SP2 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | CGD65A055S2 | CGD65C025SP1 |
|---|---|---|---|
| Brand | Cambridge GaN Devices (CGD) | Cambridge GaN Devices (CGD) | Cambridge GaN Devices (CGD) |
| Package | BHDFN-9-1 (wettable flank, surface mount) | BHDFN-9-1 (wettable flank, surface mount) | BHDFN-9-1 (wettable flank, surface mount) |
| Drain-Source Voltage (V_DS) | 650 V | 650 V | 650 V |
| R_DS(on) (typical) | 25 mΩ | 55 mΩ | 25 mΩ |
| Gate Technology | ICeGaN enhancement-mode (normally-off) | ICeGaN enhancement-mode (normally-off, with current sense) | ICeGaN enhancement-mode (normally-off) |
| Negative Gate Bias Required | No | No | No |
| Integrated Current Sense | No | Yes | No |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
Bảo phân biệt quan trọng
- ICeGaN enhancement-mode gate eliminates negative-bias supply (vsGeneric cascode GaN HEMT)
- Lowest R_DS(on) in CGD's 650 V BHDFN-9-1 family (vsCGD65A055S2)
- Wettable-flank BHDFN-9-1 package for AOI-friendly assembly (vsDFN-8 GaN HEMT without wettable flank)
Ghi chú thiết kế
The high dv/dt of the CGD65C025SP2 (edge rates down to a few nanoseconds) means the power loop inductance budget must be kept below 5 nH. Place the DC-link ceramic capacitor bank physically adjacent to the drain and source pads in the same vertical stack-up so the high-frequency loop area shrinks to the capacitor's own ESL. Use a 4-layer PCB with 2 oz copper on the inner power plane and a dedicated top-side 'switching node' pad for the drain to avoid coupling ringing into the gate trace.
Do not exceed the CGD ICeGaN gate-driver voltage window published in the preliminary datasheet; overdrive accelerates threshold-voltage shift and can permanently degrade R_DS(on). Use an isolated gate driver such as UCC23513 or ISO5852S sized for the CGD65C025SP2's required pull-up/pull-down peak current, and never drive the part directly from a logic-level MCU GPIO - the source-return inductance alone will corrupt the gate waveform.
Estimated: at 60 A continuous current with 1.5 V R_DS(on) hot-spot, conduction loss approaches 5.4 W. The BHDFN-9-1 land pattern must connect to a copper pour of at least 1 square inch on top and bottom layers with multiple thermal vias (0.3 mm drill, 1 mm pitch) for the thermal pad; otherwise junction temperature quickly exceeds 150 °C at room ambient. For continuous high-power operation, attach a small aluminum heat spreader or use the part in a top-cooled module.
Keep the gate-driver return trace (from source-sense pin to driver COM) short and direct - this is a high-frequency loop, not a power loop. Routing the gate signal over a void in the return plane guarantees ringing that may falsely enhance the device. Add a small ferrite bead or 1-2 Ω gate-source damping resistor only if the measured gate-edge overshoot exceeds the ICeGaN absolute-maximum rating in your layout.
Thông tin tuân thủ
RoHS, REACH, AEC-Q100, lead-free, halogen-free, and conflict-minerals status are not stated in the verified web data and should be confirmed with Cambridge GaN Devices. The datasheet is a preliminary May 2024 release and a final datasheet may provide updated compliance information.
