FF2000R17T2P8 - 1700V 2000A XHP2 Half-Bridge IGBT | Infineon
MPN: FF2000R17T2P8 ✓ Hoạt độngFF2000R17T2P8 Tóm tắt
An IGBT (Insulated Gate Bipolar Transistor) module is a power semiconductor assembly that combines the MOSFET-like gate-drive simplicity of the insulated gate with the low on-state conduction losses of bipolar conduction. Within the power electronics hierarchy (IGBT module -> power semiconductor -> power conversion system), modules such as the FF2000R17T2P8 form the switching core of inverters that convert DC to AC and vice versa in industrial drives, wind converters, and traction systems.
Key features include the 1700 V collector-emitter rating, 2000 A nominal continuous collector current, half-bridge (2-in-1) topology, and XHP 2 construction with minimized internal stray inductance, which yields clean switching waveforms and reduced turn-off voltage overshoot. The IGBT8 die delivers low VCE(sat) and switching losses, while the EC8 diode provides soft recovery that lowers EMI stress. Short-circuit robustness and the onboard NTC support reliable protection and thermal monitoring.
Technically, the trench field-stop structure improves the trade-off between conduction and switching losses, enabling higher efficiency and greater power density than prior chip generations. The scalable XHP 2 multi-package housing simplifies paralleling and platform-level design reuse across a wide power range.
Typical applications include wind turbine full-converter systems, medium-voltage and large industrial motor drives, traction inverters, and high-power industrial power supplies, where efficiency, current density, and field reliability dominate the design.
Design consideration: gate-drive and thermal design dominate success. Provide adequate driver peak current and galvanic isolation, size the heatsink for module dissipation, and minimize DC-link stray inductance (adding snubbers where needed) to keep turn-off overshoot within the 1700 V rating.
This page synthesizes distributor sourcing data, drop-in alternative analysis, and practical high-power design notes not found in the Infineon datasheet; pricing references are as of 2026-09-11 and should be confirmed for volume quotes.
Bộ thay thế dễ dàng lắp đặt cho FF2000R17T2P8 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với FF2000R17T2P8 (cùng hình factor và footprint) — khác nhau ở Integrated Temperature Sensor, Mounting Type.
FF1400R17T2P8
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →FF2000R17T2P8BPSA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
FF2000R17T2P8 Tỷ lệ tối đa & tính chất điện
| Cấu trúc | Half-Bridge (2-in-1) |
| Package Platform | XHP 2 (XHPTM2) |
| Collector-Emitter Voltage (VCES) | 1700 V |
| Nominal DC Collector Current | 2000 A |
| IGBT Technology | TRENCHSTOP IGBT8 trench field-stop |
| Diode Technology | Emitter controlled 8 (EC8) soft recovery |
| Integrated Temperature Sensor | NTC |
| Kiểu lắp đặt | Chassis Mount Module |
| Applications Grade | Industrial / traction / wind |
| Short-Circuit Capability | Short-circuit rated per datasheet |
| Trạng thái RoHS | unknown |
Hướng dẫn cấu hình chân FF2000R17T2P8 xhp 2 (xhptm2)
Cấu hình chân cho FF2000R17T2P8 (xhp 2 (xhptm2) gói). Động cơ điện này có chân cổng, nguồn và đầu ra. Đối với các gói không phân極, tham khảo tài liệu thông số kỹ thuật của nhà sản xuất để biết hướng dẫn chính xác của chân 1 và chi tiết về vân footprint. Các ứng dụng phổ biến bao gồm thiết kế nguồn cung cấp điện, điều khiển động cơ và chuyển đổi tải.
Không có dữ liệu chân cụ thể sẵn có cho FF2000R17T2P8.
Tham khảo: tài liệu kỹ thuật cho cấu hình chân đầy đủ.
Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
FF2000R17T2P8 phù hợp cho 6 Áp dụngs: Wind Turbine Converters, Industrial Motor Drives, Traction Inverters, High-Power Industrial Power Supplies, Solar Central Inverters, Energy Storage Converters (PCS).
Wind Turbine Converters
The FF2000R17T2P8 fits wind turbine full-converter and grid-side inverter stages because its 1700 V rating supports 690 V AC systems with ample overshoot margin, while the 2000 A nominal current delivers multi-megawatt-class power per module bank. The IGBT8/EC8 chipset reduces conduction and switching losses, directly improving converter efficiency and reducing heatsink load in the nacelle. The XHP 2 low-inductive housing limits turn-off overshoot on long DC-link busbars typical of turbine layouts, and the integrated NTC feeds the controller for real-time thermal protection and derating, which is essential for the variable-load profile of wind energy conversion.
Được đề xuất
Industrial Motor Drives
In medium-voltage and large industrial motor drives, the FF2000R17T2P8 serves as the half-bridge switching element of the inverter stage. Its 1700 V blocking voltage covers standard 690 V AC drive DC links with margin, and the 2000 A rating supports large frame-size motors without paralleling. The IGBT8 trench field-stop die minimizes VCE(sat) for reduced conduction losses during long low-speed torque duty, while the EC8 soft-recovery diode limits di/dt-driven EMI into drive cabling. Low XHP 2 stray inductance enables snappy switching with bounded overshoot, and the onboard NTC supports drive-level thermal monitoring and protective derating logic.
Được đề xuất
Traction Inverters
Rail traction inverters demand high current density, robustness, and long service life, all met by the FF2000R17T2P8. The 1700 V rating matches the DC-link voltages of light-rail and metro converters, and 2000 A per module supports traction motors under heavy peak-torque demands such as acceleration out of stations. The XHP 2 scalable platform allows a single mechanical design language across power classes, easing fleet qualification, while the trench field-stop IGBT8 chipset balances efficiency against the rugged short-circuit behavior required in traction. The NTC sensor enables continuous thermal supervision in the constrained cooling environment of traction converters.
Được đề xuất
High-Power Industrial Power Supplies
High-power industrial power supplies, rectifiers, and DC fast-charging infrastructure use the FF2000R17T2P8 as the core switching element of phase legs in inverter or chopper stages. The 2000 A rating allows rack-level power scaling with fewer paralleled switches, improving current sharing predictability and reliability. Switching-loss reduction from IGBT8 improves efficiency at the high throughput typical of electrolysis, welding, and charging systems, and the EC8 diode soft recovery controls reverse-recovery EMI in compact layouts. XHP 2 low-inductance construction simplifies DC-link capacitor and busbar design, keeping overshoot inside the 1700 V window.
Được đề xuất
Solar Central Inverters
Utility-scale solar central inverters operating from 1000 V or 1500 V DC arrays benefit from the FF2000R17T2P8 in the grid-tie inverter stage where 1700 V blocking provides margin for DC-link transients. The 2000 A rating supports high per-module output power, reducing component count in megawatt-class inverters. IGBT8 conduction-loss improvements matter because solar inverters spend long periods at partial-to-full load where VCE(sat) losses dominate; the EC8 diode reduces turn-off losses on the complementary switch. The NTC enables inverter-level thermal management important for outdoor enclosures, and XHP 2 power density shrinks the overall inverter station footprint.
Được đề xuất
Energy Storage Converters (PCS)
Battery energy storage power conversion systems (PCS) run bidirectional DC-AC conversion between battery banks and the grid, where the FF2000R17T2P8 provides the half-bridge switching core. The 1700 V rating suits high-voltage battery strings, and 2000 A supports the high discharge rates storage systems must deliver during grid events. Round-trip efficiency is directly improved by the IGBT8/EC8 chipset's reduced losses, which also lowers cooling demand in containerized PCS enclosures. Low XHP 2 stray inductance bounds overshoot on aggressive charge/discharge switching, and the integrated NTC plus short-circuit ruggedness protect against fault conditions during fast transient operation.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho FF2000R17T2P8 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | FF1400R17T2P8 | FF2000R17T2P8BPSA1 |
|---|---|---|---|
| Package | XHP 2 chassis-mount module | XHP 2 - same | XHP 2 - same |
| Brand | Infineon | Infineon | Infineon |
| VCES Blocking Voltage | 1700 V | 1700 V | 1700 V |
| Nominal Current | 2000 A | 1400 A | 2000 A |
| Topology | Half-Bridge (2-in-1) | Half-Bridge (2-in-1) | Half-Bridge (2-in-1) |
| IGBT Chipset | TRENCHSTOP IGBT8 | TRENCHSTOP IGBT8 | TRENCHSTOP IGBT8 |
| Diode Chipset | EC8 emitter controlled | EC8 emitter controlled | EC8 emitter controlled |
| Integrated NTC | Yes | Yes | Yes |
| Typical Applications | Wind, traction, large drives | Wind, traction, drives (lower power) | Wind, traction, large drives |
Bảo phân biệt quan trọng
- 30% higher nominal current in identical footprint (vsFF1400R17T2P8)
- Latest-generation chipset (vsFF1400R17T2P8)
- Integrated NTC thermal sensing (vsFF2000R17T2P8BPSA1)
Ghi chú thiết kế
Estimated: DC-link stray inductance is the dominant failure driver for a 2000 A switch. At turn-off di/dt of several kA/us, even 50 nH of busbar inductance produces hundreds of volts of overshoot on top of the DC-link voltage. Keep total commutation-loop inductance as low as the XHP 2 design allows, laminate the DC-link busbar with overlapping positive/negative plates, and place DC-link capacitors directly over the module terminals. Verify measured overshoot at maximum load current stays below the 1700 V VCES rating with margin.
Estimated: at 2000 A operation, conduction losses from VCE(sat) alone are on the order of a few kilowatts per switch position, so heatsink and coolant sizing dominate reliability. Use the RthJC values from the Infineon datasheet to compute junction temperature rise for your switching frequency and duty cycle, and include diode reverse-recovery losses on the complementary device. The integrated NTC reads substrate-adjacent temperature, not true junction temperature; apply the datasheet offset between NTC and junction when setting derating thresholds.
Use a gate driver with adequate peak current and galvanic isolation for the XHP 2 module; undersized drivers stretch switching transitions and inflate losses. Respect negative gate bias during off-state to prevent parasitic turn-on from Miller coupling in the half-bridge, especially at the high di/dt this module enables. Implement the datasheet short-circuit detection window (desaturation monitoring) in the driver, since the module is short-circuit rated only for the specified duration. Never rely on the NTC alone for fast overcurrent protection.
Thông tin tuân thủ
Compliance data not stated in provided web data; consult the official Infineon datasheet and product page for RoHS/REACH status of the FF2000R17T2P8.
