IAUS300N08S5N012T - 80V, 1.2 mΩ, 300A OptiMOS 5 MOSFET | Infineon
MPN: IAUS300N08S5N012T ✓ Hoạt độngIAUS300N08S5N012T Tóm tắt
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch designed to handle high currents and voltages. MOSFETs belong to the transistor family within discrete semiconductors, and they are the fundamental building blocks of switched-mode power conversion. The IAUS300N08S5N012T sits in the 80 V N-channel subcategory and is specifically engineered for 48 V automotive systems including mild-hybrid powertrains, e-machines, DC-DC converters, and battery switches.
The device's headline parameter is its ultra-low R_DS(on) of 1.2 mΩ at V_GS = 10 V, which minimises conduction losses in high-current paths. The 300 A continuous drain current rating (current limited by bondwire, with the chip itself capable of carrying 400 A at 25 °C with R_thJC = 0.4 K/W) makes it well-suited to high-power switching nodes. The device is qualified to AEC-Q101 for automotive use, and the TOLT topside-cooled package offers a low thermal resistance path to a cold plate or heatsink.
Typical applications include 48 V traction inverters, 48 V DC-DC converters, 48 V battery main switches, high-current OR-ing circuits, and synchronous rectification in telecom and industrial power supplies. Its AEC-Q101 qualification also supports industrial-grade high-current switching where long-term reliability is required.
When designing with the IAUS300N08S5N012T, careful PCB layout is critical: minimise source-loop inductance, use a wide copper pour on the topside pad, and ensure the V_GS gate-drive voltage is firmly above the threshold with adequate gate-drive strength to avoid shoot-through.
This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single reference for BOM decisions and second-source selection.
Bộ thay thế dễ dàng lắp đặt cho IAUS300N08S5N012T — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUS300N08S5N012T (cùng hình factor và footprint) — khác nhau ở Package, Technology.
IAUS300N08S5N012
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IAUS300N08S5N012TATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IAUS300N08S5N012T Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | IAUS300N08S5N012T |
| Technology | OptiMOS 5 |
| Drain-Source Voltage (V_DS) | 80 V |
| On-State Resistance (R_DS(on)) | 1.2 mΩ max @ V_GS = 10 V |
| Continuous Drain Current (I_D) | 300 A (Tj) |
| Power Dissipation (P_D) | 375 W (Tc) |
| Thermal Resistance Junction-to-Case (R_thJC) | 0.4 K/W |
| Maximum Chip Current | 400 A at 25°C (chip-limited) |
| Hộp | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| Kiểu lắp đặt | Surface Mount |
| Channel Polarity | N-Channel |
| Automotive Qualification | AEC-Q101 qualified |
| Marking Code | 5N08012 |
| Trạng thái RoHS | Compliant (per Infineon product page) |
Cấu hình chân IAUS300N08S5N012T
| Chân 1 | Source — Source terminal |
| Chân 2 | Source — Source terminal |
| Chân 3 | Source — Source terminal |
| Chân 4 | Source — Source terminal |
| Chân 5 | Source — Source terminal |
| Chân 6 | Source — Source terminal |
| Chân 7 | Source — Source terminal |
| Chân 8 | Source — Source terminal |
| Chân 9 | Gate — Gate drive input |
| Chân 10 | Source — Source terminal |
| Chân 11 | Source — Source terminal |
| Chân 12 | Source — Source terminal |
| Chân 13 | Source — Source terminal |
| Chân 14 | Source — Source terminal |
| Chân 15 | Drain — Drain terminal (top-side cooled) |
| Chân 16 | Drain — Drain terminal (top-side cooled) |
Khu vực hoạt động an toàn (DC, Tj = 25°C)
Ứng dụng tiêu biểu
IAUS300N08S5N012T phù hợp cho 6 Áp dụngs: 48V Automotive Traction Inverter, 48V DC-DC Converter, 48V Battery Main Switch, High-Current OR-ing / Load Switch, Synchronous Rectifier in Telecom Power Supplies, Industrial High-Power Motor Drive.
48V Automotive Traction Inverter
The IAUS300N08S5N012T is engineered for 48 V mild-hybrid traction inverter switches. Its 1.2 mΩ maximum R_DS(on) at V_GS = 10 V minimises conduction loss in the high-current phase legs, while the 80 V V_DS rating provides generous transient headroom above the 48 V bus. The 300 A continuous drain current rating handles peak inverter loads, and the TOLT topside-cooled package enables direct attachment to a cold plate for sustained 375 W dissipation. In a typical 48 V e-machine inverter, two of these MOSFETs per phase minimise switching and conduction loss while meeting AEC-Q101 reliability.
Được đề xuất
48V DC-DC Converter
The IAUS300N08S5N012T serves as the primary synchronous rectifier or high-side switch in 48 V to 12 V or 48 V to 24 V DC-DC converters. Its ultra-low 1.2 mΩ R_DS(on) directly reduces I²R losses across hundreds of amps of switching current, improving converter efficiency by 1-2 percentage points compared to higher-R_DS(on) parts. The 80 V rating easily handles 48 V bus transients, and the AEC-Q101 qualification suits automotive under-hood environments. The topside-cooled TOLT package simplifies thermal design in dense converter modules where board space is constrained.
Được đề xuất
48V Battery Main Switch
For 48 V lithium-ion battery main disconnect and protection switches, the IAUS300N08S5N012T provides the high-current carrying capability and ultra-low resistance required for minimal voltage drop under full load. With 300 A continuous current and 1.2 mΩ R_DS(on), the device dissipates only 27 W at 150 A, eliminating active cooling in many designs. The 80 V rating handles series-battery stack voltages up to 14 cells, while AEC-Q101 qualification ensures long-term reliability under automotive temperature cycling.
Được đề xuất
High-Current OR-ing / Load Switch
In redundant 48 V power systems, the IAUS300N08S5N012T enables high-current OR-ing switches that combine two independent power sources with minimal loss. Its 1.2 mΩ R_DS(on) introduces only 0.3 V drop at 250 A, well within tolerance for most downstream regulators. The 80 V V_DS rating handles transient back-feed events, and the topside-cooled package simplifies heatsinking in high-density server and telecom power shelves.
Được đề xuất
Synchronous Rectifier in Telecom Power Supplies
For high-current 48 V telecom rectifier modules delivering 50-100 A at 12 V or 5 V outputs, the IAUS300N08S5N012T functions as the synchronous rectifier on the secondary side, replacing Schottky diodes and eliminating forward-voltage losses. The 1.2 mΩ R_DS(on) reduces rectification loss by 50-70% versus equivalent Schottky diodes at high currents, while the 80 V rating handles voltage spikes from the transformer leakage inductance. The TOLT topside-cooled package enables compact module designs.
Được đề xuất
Industrial High-Power Motor Drive
Beyond automotive, the IAUS300N08S5N012T fits industrial motor drives up to 30 kW operating from 48-72 V DC buses. Its 300 A current rating and 375 W power dissipation in the TOLT package support peak motor currents during acceleration, while AEC-Q101 qualification (which exceeds industrial requirements) ensures extended service life. Designers should provide adequate heatsinking via the topside pad and follow Infineon PCB layout guidelines for high-current switching.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUS300N08S5N012T — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUS300N08S5N012 | IAUS300N08S5N012TATMA1 |
|---|---|---|---|
| Package | PG-HDSOP-16-2 (TOLT) | PG-HDSOP-16-2 (TOLT) - same | PG-HDSOP-16-2 (TOLT) - same |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same |
| V_DS (Drain-Source Voltage) | 80 V | 80 V | 80 V |
| R_DS(on) max @ V_GS=10V | 1.2 mΩ | 1.2 mΩ | 1.2 mΩ |
| Continuous Drain Current | 300 A | 300 A | 300 A |
| Power Dissipation | 375 W (Tc) | 375 W (Tc) | 375 W (Tc) |
| Thermal Resistance R_thJC | 0.4 K/W | 0.4 K/W | 0.4 K/W |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Ordering Code Suffix | T (tape & reel) | no suffix (base part) | TATMA1 (specific reel code) |
Bảo phân biệt quan trọng
- Ultra-low R_DS(on) at 80 V rating (vsStandard 80 V MOSFETs in DPAK/TO-220)
- Topside-cooled TOLT package (vsBottom-cooled packages (DPAK, D2PAK))
- AEC-Q101 automotive qualification (vsIndustrial-grade only MOSFETs)
Ghi chú thiết kế
The TOLT package is designed for topside cooling - the drain pad is on top of the package for direct attachment to a heatsink or cold plate via a thermal interface material. With R_thJC = 0.4 K/W, the device can dissipate 375 W at Tc = 25°C. For a 48 V inverter switching 200 A continuous, conduction loss alone is P = I² × R_DS(on) = 200² × 0.0012 = 48 W. Designers should size the heatsink for a junction temperature below 150°C, and use thermal interface material rated for automotive temperature cycling (-40°C to +150°C).
PCB layout for high-current MOSFET switching must minimise source-loop inductance to prevent V_GS ringing and possible shoot-through. Place gate-drive components within 5 mm of the gate pin, use a ground return directly under the gate-drive signals, and keep the high-current source-drain loop area minimal. Use a 4-layer PCB with a solid ground plane on layer 2 directly under the source pins. For the topside-cooled package, ensure the PCB copper under the drain pad is solid and continuous to provide mechanical support.
Common pitfalls when using the IAUS300N08S5N012T include: (1) insufficient gate-drive voltage - V_GS must be at least 10 V to achieve the datasheet R_DS(on); (2) undersized gate-drive current - peak gate current must charge Q_G within the switching period, typically requiring a gate-driver with at least 2-4 A peak source/sink capability; (3) missing TVS protection on the gate - sensitive gates can be damaged by ESD or dV/dt-induced ringing; (4) failing to derate for ambient temperature - the 300 A rating is at Tc = 25°C and decreases significantly at higher case temperatures.
For 48 V automotive systems, follow Infineon's PCB layout guidelines for TOLT packages: use the full PCB copper area under the source pads as the high-current return path, place the gate-driver IC as close as possible to the gate pin (within 5 mm), and route the Kelvin-source connection (if available) directly to the gate-driver ground rather than the high-current source. The 80 V V_DS rating requires creepage and clearance per IPC-2221 for the working voltage, plus appropriate margin for pollution degree 3.
Thông tin tuân thủ
AEC-Q101 qualified (automotive grade, supersedes AEC-Q100 for discrete semiconductors). RoHS and lead-free compliant per Infineon product page. REACH compliance confirmed.
