IAUS300N08S5N012 - 80V 300A 1.2mΩ OptiMOS 5 Power MOSFET | Infineon
MPN: IAUS300N08S5N012 ✓ Hoạt độngIAUS300N08S5N012 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route and switch high currents at high frequencies. Power MOSFETs sit inside the hierarchy discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> power management switch. They are differentiated from signal MOSFETs by low on-resistance, high current handling, and avalanche ruggedness, making them the workhorse of switched-mode power supplies (SMPS), motor drives, and load switches.
The IAUS300N08S5N012's headline figures include 1.2 mΩ typical R<sub>DS(on)</sub> at 10 V VGS, 300 A continuous Id, 375 W power dissipation, and an avalanche-rated single-pulse drain current. Its threshold voltage VGS(th) of 3.8 V at 275 µA supports standard 12 V automotive gate-drive architectures, while the optimized OptiMOS 5 cell shrinks switching losses and reduces Qg for higher-frequency, higher-efficiency designs.
The OptiMOS 5 process technology uses a planar trench structure to minimize R<sub>DS(on)</sub> × area figure-of-merit, which directly translates to lower conduction loss in heavy-load conditions. Combined with 100% avalanche-tested ruggedness and a low thermal resistance package, the IAUS300N08S5N012 is engineered for high-reliability environments where long-term operation at high junction temperature is required.
Typical applications include high-current automotive 48 V/12 V load switches, electric power steering (EPS) motor drives, brake-by-wire systems, DC-DC converter primary switches, battery management protection, and high-power industrial SMPS. Designers choose this part when conduction loss dominates the thermal budget and ultra-low R<sub>DS(on)</sub> is mandatory.
When designing, derate Id to roughly 50% of the 300 A rating once package thermal resistance and PCB copper are accounted for; a continuous 150 A load on a 1 oz copper 4-layer board typically requires at least 6 cm² of copper under the PG-HSOG-8-1 thermal pad. Always gate-drive with a dedicated driver such as the EiceDRIVER 1EDN series to keep switching loss in check.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IAUS300N08S5N012 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IAUS300N08S5N012 (cùng hình factor và footprint) — khác nhau ở Package, Operating Temperature Range, RoHS Compliance, Technology.
IAUS300N08S5N012ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IAUS300N08S5N012TATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IAUT300N08S5N012ATMA2
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →VBGQT1801
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IAUS300N08S5N012 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at TC | 300 A |
| On-Resistance R<sub>DS(on)</sub> Max at VGS=10V | 1.2 mΩ typical |
| Gate-Source Threshold Voltage VGS(th) | 3.8 V at 275 µA |
| Power Dissipation (PD) at TC | 375 W |
| Khoảng nhiệt độ hoạt động | -55°C to +175°C |
| Hộp | PG-HSOG-8-1 (Surface Mount) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | MSL1 (up to 260°C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Compliance | RoHS compliant (Green product) |
| Avalanche Rating | 100% Avalanche tested |
| Technology | OptiMOS 5 planar trench |
| Terminals | 8 |
Cấu hình chân IAUS300N08S5N012
| Chân 1 | Source — Kelvin source (low-inductance gate return) |
| Chân 2 | Source — Source connection |
| Chân 3 | Source — Source connection |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Source — Source connection |
| Chân 6 | Source — Source connection |
| Chân 7 | Source — Source connection |
| Chân 8 | Drain — Drain connection (also exposed thermal pad) |
Khu vực hoạt động an toàn - IAUS300N08S5N012
Ứng dụng tiêu biểu
IAUS300N08S5N012 phù hợp cho 6 Áp dụngs: Automotive 48V/12V High-Current Load Switch, Electric Power Steering (EPS) Motor Drive, Brake-by-Wire and Chassis Control, High-Power DC-DC Converter Primary Switch, Battery Management System (BMS) Protection, Industrial High-Power SMPS and Welding.
Automotive 48V/12V High-Current Load Switch
The IAUS300N08S5N012 is purpose-built for automotive high-current load switches where 80 V V<sub>DS</sub> provides headroom above 48 V bus transients and 1.2 mΩ R<sub>DS(on)</sub> keeps I²R conduction loss low at 100-200 A peak loads. Placed between the battery rail and a downstream DC-DC or e-fuse, its 300 A continuous rating supports sustained current without thermal runaway. Compared to smaller 5x6 mm MOSFETs, the PG-HSOG-8-1 footprint delivers superior thermal coupling - critical when packaging size is constrained by PCB area. AEC-Q101 qualification and 175°C Tj rating cover powertrain, chassis, and body-electronics environments where ambient under-hood temperatures regularly exceed 125°C.
Được đề xuất
Electric Power Steering (EPS) Motor Drive
The IAUS300N08S5N012 suits EPS brushless-DC motor half-bridge stages where 80 V V<sub>DS</sub> comfortably covers 12 V/24 V automotive rails plus inductive flyback transients. Its 1.2 mΩ R<sub>DS(on)</sub> minimises conduction loss during the high-current phases of steering assist, directly improving system efficiency and reducing heatsink mass. The PG-HSOG-8-1 exposed pad gives ~1°C/W thermal resistance when soldered to 6 cm² of 1 oz copper, supporting 100+ A RMS continuous operation. AEC-Q101, MSL1, and 100% avalanche-test compliance satisfy the long-term reliability expectations of EPS modules.
Được đề xuất
Brake-by-Wire and Chassis Control
Brake-by-wire electro-mechanical actuators demand MOSFETs that combine ultra-low R<sub>DS(on)</sub> with AEC-Q101 reliability. The IAUS300N08S5N012's 1.2 mΩ typical R<sub>DS(on)</sub> at 10 V V<sub>GS</sub> minimises heat buildup inside sealed actuator housings where ambient already runs hot. The 175°C maximum junction temperature tolerates transient thermal excursions during emergency braking. As a high-side or low-side switch in the actuator H-bridge, the PG-HSOG-8-1 package simplifies PCB layout because the exposed drain pad doubles as a thermal spreader, reducing the need for external heatsinks.
Được đề xuất
High-Power DC-DC Converter Primary Switch
The IAUS300N08S5N012 can serve as the primary-side high-current switch in multi-kilowatt automotive DC-DC converters that step 48 V down to 12 V or 24 V down to 12 V. Its 1.2 mΩ R<sub>DS(on)</sub> and 300 A continuous rating support >3 kW designs without paralleling, simplifying layout and reducing gate-drive complexity. The 80 V V<sub>DS</sub> rating provides 30% margin above a typical 48 V nominal bus, accommodating inductive ringing and transient overshoots. OptiMOS 5's reduced Qg translates to lower switching loss at 100-200 kHz switching frequencies, directly improving converter efficiency.
Được đề xuất
Battery Management System (BMS) Protection
The IAUS300N08S5N012 is suitable for high-current battery pack protection disconnect switches in EV and industrial energy-storage systems. With 300 A continuous drain current and 80 V V<sub>DS</sub>, it can interrupt a 48 V battery string during fault events without derating. The 100% avalanche-tested rating ensures robustness under inductive kickback, and the OptiMOS 5 cell structure keeps R<sub>DS(on)</sub> stable across the full temperature range - essential for predictable voltage-drop behaviour in battery-management state-of-charge calculations.
Được đề xuất
Industrial High-Power SMPS and Welding
In industrial switched-mode power supplies, induction heaters, and welding inverters the IAUS300N08S5N012 delivers 300 A continuous current at 80 V with the ruggedness required for repetitive pulsed loads. Its 100% avalanche-tested construction absorbs energy from leakage inductance during commutation, while the 1.2 mΩ R<sub>DS(on)</sub> reduces conduction loss in heavy-duty continuous operation. The PG-HSOG-8-1 surface-mount package enables automated high-volume assembly versus traditional TO-247/TO-3P through-hole parts, lowering manufacturing cost.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IAUS300N08S5N012 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IAUS300N08S5N012ATMA1 | IAUS300N08S5N012TATMA1 | IAUT300N08S5N012 | VBGQT1801 |
|---|---|---|---|---|---|
| Package | PG-HSOG-8-1 | PG-HSOG-8-1 - same | PG-HSOG-8-1 - same | PG-HSOG-8-1 - same | TOLL (TO-Leadless) - cross-compatible footprint |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Chinese domestic manufacturer |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 80 V | 80 V | 80 V |
Bảo phân biệt quan trọng
- Lowest R<sub>DS(on)</sub> × package-size ratio in its class (vsVBGQT1801)
- AEC-Q101 automotive qualification with full traceability (vsIAUT300N08S5N012)
- 100% avalanche-tested single-pulse ruggedness (vsIAUS300N08S5N012ATMA1)
Ghi chú thiết kế
Estimated: At a continuous 150 A load, conduction loss equals I² × R<sub>DS(on)</sub> = 150² × 0.0012 ≈ 27 W. With 6 cm² of 1 oz copper under the exposed pad (θJA ≈ 12°C/W), junction temperature rise above ambient is ~324°C, which exceeds the 175°C Tj rating - derate to ≈80 A continuous or add active cooling. Always solder the exposed pad to a continuous copper pour; thermal vias under the pad reduce θJA by an additional 20-30%.
Use a 4-layer PCB with at least 2 oz outer copper on the drain-pad footprint. Place gate-driver ICs within 10 mm of the gate pin to minimise gate-loop inductance; the PG-HSOG-8-1's kelvin-source pins (1-3, 5-7) must be connected directly to the gate-driver ground return, NOT to the power-source plane, to avoid source-induced gate-oscillation.
Do not exceed V<sub>GS</sub> = ±20 V absolute maximum - even a brief gate-overshoot above this threshold destroys the gate oxide. Add a gate-source resistor of 10-100 kΩ to hold the MOSFET off during controller power-up, and a TVS diode (e.g. SMBJ16A) from gate to source if the gate-drive path is long or noisy. Verify R<sub>DS(on)</sub> at the actual operating temperature, not the 25°C datasheet value, since R<sub>DS(on)</sub> roughly doubles at 125°C.
Place a 1 µF X7R ceramic bypass capacitor between V<sub>DD</sub> and PGND of the gate-driver IC, with the loop area kept under 0.5 cm². Route the high-current source and drain paths on opposite PCB layers to minimise loop inductance; the PG-HSOG-8-1's 8 pins allow splitting source current across pins 1-3 and 5-7 to reduce per-pin current density and improve thermal spreading.
Thông tin tuân thủ
RoHS compliant Green product per Infineon datasheet. AEC-Q101 qualified (AEC-Q100 family for discrete semiconductors). MSL1 to 260°C peak reflow.
