IKP15N60T - 600V 15A TRENCHSTOP IGBT TO-220 | Infineon
MPN: IKP15N60T ✓ Hoạt độngIKP15N60T Tóm tắt
An IGBT (Insulated Gate Bipolar Transistor) is a voltage-controlled bipolar power semiconductor that combines the high-input-impedance gate drive of a MOSFET with the low conduction loss of a bipolar transistor. Within the power semiconductor hierarchy, the IGBT sits between MOSFETs and thyristors: above MOSFETs for high-voltage (>400 V) applications where Rdson losses become excessive, and below thyristors where latching and conduction are desired. The "TRENCHSTOP" generation uses an etched-gate trench structure to improve channel density and reduce VCE(sat), while the "fieldstop" buffer minimises tail switching loss, which together push switching energies down by 40-50% versus planar PT devices. The co-packed EmCon HE freewheeling diode (HE = high efficiency) is reverse-recovery-soft, which reduces EMI and dv/dt stress on the companion switch.
Key features include: VCE(sat) of 1.5 V typical at rated current, VCE of 600 V (collector-emitter blocking), IC of 15 A continuous (DC collector current 26-30 A pulsed), anti-parallel EmCon HE diode rated to match the IGBT, 5 microsecond short-circuit withstand time, 175 °C maximum operating junction temperature, and 130 W maximum power dissipation. The TO-220 package provides a tab that serves as an exposed heatsink surface and a single mounting hole for a clip or screw.
The IKP15N60T is intended for hard-switched converter topologies at switching frequencies in the 4-30 kHz band. Typical deployments include uninterruptible power supplies (UPS), solar inverters, induction heating, and welding machine primary-side switches. The 600 V class rating leaves comfortable margin above rectified 230 V AC (peak 325 V DC) and 400 V rectified three-phase rails (≈565 V DC), allowing non-critical snubbers to be simplified. The 5 microsecond short-circuit withstand rating supports industrial motor drives that must survive transient overload conditions per IEC 60134-1.
For the design engineer, the critical decision is whether a co-packaged diode is wanted. The IKP15N60T includes the diode internally; bare IGBTs of the same generation (e.g. IGB15N60T, if available separately) require an external anti-parallel rectifier. The TO-220 package is footprint-compatible with virtually every discrete 600 V IGBT and MOSFET in the industry, simplifying PCB layout. Power dissipation must be checked: at 15 A and VCE(sat) of 1.5 V, conduction loss is ≈22.5 W; a clip-on or PCB-mount heatsink is mandatory.
This page synthesizes current distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select, source, and lay out the IKP15N60T with confidence.
Bộ thay thế dễ dàng lắp đặt cho IKP15N60T — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
IKP20N60T
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IKP10N60T
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IKP06N60T
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IKP15N60TXKSA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
FGA15N60UFDTU
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IKP15N60T Tỷ lệ tối đa & tính chất điện
| Collector-Emitter Voltage (VCE) | 600 V |
| Continuous DC Collector Current (IC, TC=25°C) | 26 A (some sources 30 A) |
| VCE(sat) at IC=15A, Tj=25°C | 1.5 V (typical) |
| Power Dissipation (Ptot, TC=25°C) | 130 W |
| Short-Circuit Withstand Time (tsc, VCC=360V, Tj=150°C) | 5 microseconds |
| Maximum Junction Temperature (Tj max) | 175 °C |
| Anti-Parallel Diode Type | Emitter Controlled HE (co-packed, full-rated) |
| Technology | TRENCHSTOP + Fieldstop (IGBT3) |
| Hộp | TO-220 (PG-TO220-3-1) 3-pin through-hole |
| Kiểu lắp đặt | Through-Hole (TO-220 tab for heatsink) |
| RoHS Compliance | Compliant (lead-free finish) |
Cấu hình chân IKP15N60T
| Chân 1 | Gate — Gate control input; drive with 15V on, -5 to 0V off |
| Chân 2 | Collector — Main current terminal (also tied to metal tab) |
| Chân 3 | Emitter — Main current return terminal; connect to gate driver ground |
Reverse Bias Khu vực hoạt động an toàn (RBSOA)
Ứng dụng tiêu biểu
IKP15N60T phù hợp cho 7 Áp dụngs: Uninterruptible Power Supply (UPS) Inverter, Residential Solar String Inverter, Induction Heating Cooktop, Welding Machine Primary-Side Inverter, Industrial Motor Drive (Small HP), Switch-Mode Power Supply (SMPS) Primary Switch, Automotive On-Board Charger (Auxiliary).
Uninterruptible Power Supply (UPS) Inverter
The IKP15N60T fits single-phase UPS inverter stages operating from a 360-400 V DC bus. The 600 V VCE rating leaves comfortable margin above rectified 230 V mains (peak ≈325 V), the 15 A continuous rating supports 3-5 kVA inverter modules, and the co-packed EmCon HE diode eliminates the need for an external anti-parallel rectifier in the half-bridge leg. Compared to a discrete IGBT + diode solution, the DuoPack saves PCB area and reduces parasitic inductance in the gate-emitter loop. Switching frequency in UPS stages typically runs at 16-20 kHz, well within the TRENCHSTOP sweet spot where the 1.5 V VCE(sat) outperforms MOSFET Rds(on) losses.
Được đề xuất
Residential Solar String Inverter
The IKP15N60T is well-matched to residential single-phase solar string inverters with DC link voltages of 360-400 V derived from boosted PV input. The 600 V VCE class accommodates transient voltage spikes from transformer leakage inductance with adequate margin. Its 5 microsecond short-circuit withstand rating supports ground-fault detection events required by UL 1741 and IEC 62109. The co-packed EmCon HE diode handles transformer magnetizing current freewheeling without external components. Switching losses at 16-20 kHz are favorable due to the fieldstop layer, keeping efficiency above 96% in transformerless inverter designs.
Được đề xuất
Induction Heating Cooktop
The IKP15N60T serves as the primary-side resonant switch in induction heating cooktops operating at 20-30 kHz from rectified 230 V mains. The TRENCHSTOP technology's low VCE(sat) of 1.5 V minimizes conduction loss during the high-current half-cycle of the resonant tank, while the fieldstop layer reduces turn-off switching loss - critical for soft-switched quasi-resonant topologies. The 5 microsecond short-circuit withstand rating protects against pan-detection fault events. The TO-220 package mounts directly to the cooktop's heatsink chassis with a single screw, simplifying assembly. Its 175 °C Tj max rating supports sustained high-power cooking cycles.
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Welding Machine Primary-Side Inverter
The IKP15N60T is a strong fit for the primary-side full-bridge of a compact welding inverter operating from rectified 230 V mains at switching frequencies of 20-50 kHz. The 600 V VCE rating handles the DC link of ≈325 V with margin for transformer leakage spikes. The 15 A continuous current supports stick/TIG welders up to 200 A output with proper transformer turns ratio. Short-circuit withstand of 5 microseconds is essential for surviving arc-strike transients and electrode short conditions. The co-packed EmCon HE diode provides clean freewheeling across the bridge without external components, reducing BOM cost.
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Industrial Motor Drive (Small HP)
The IKP15N60T fits variable-frequency drives (VFDs) for fractional-horsepower industrial motors (1-3 HP) operating from 230 V single-phase or 400 V three-phase rectified mains. Its TO-220 package with clip-on heatsink provides adequate thermal dissipation for 5-10 kW drive stages. The 5 microsecond short-circuit withstand time satisfies IEC 60134-1 fault-clearing requirements. The co-packed EmCon HE diode reduces EMI from hard-switched motor regeneration events. The 15 A current rating supports continuous motor currents up to 12 A after thermal derating, ideal for pumps, fans, and conveyor motors.
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Switch-Mode Power Supply (SMPS) Primary Switch
The IKP15N60T is used as the primary-side switch in hard-switched full-bridge or half-bridge SMPS topologies for industrial power supplies, telecom rectifiers, and high-power LED drivers operating from 230 V AC mains. The 600 V VCE rating handles 325 V DC link with margin for reflected leakage spikes. At 20-50 kHz switching frequency, the TRENCHSTOP technology balances conduction and switching losses better than older PT-IGBT generations. The co-packed EmCon HE diode handles transformer magnetizing current without external freewheeling components, reducing BOM and PCB area.
Được đề xuất
Automotive On-Board Charger (Auxiliary)
While the IKP15N60T is not AEC-Q100 qualified, it serves well in non-safety-critical auxiliary on-board charger (OBC) modules for e-bikes, golf carts, and low-voltage EV auxiliary converters operating from rectified 48-96 V battery stacks. The 600 V VCE rating provides massive margin in 96 V systems for reliable operation. The co-packed diode and 5 microsecond short-circuit withstand support fault-tolerant designs with clip-on mounting. Designers targeting AEC-Q100 should consider IGBTs from the Infineon automotive-grade portfolio.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IKP15N60T — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IKP20N60T | IKP10N60T | IKP06N60T | IKP15N60TXKSA1 | FGA15N60UFDTU |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | TO-220 (PG-TO220-3-1) | TO-220 (PG-TO220-3-1) - same | TO-220 (PG-TO220-3-1) - same | TO-220 (PG-TO220-3-1) - same | TO-220 (PG-TO220-3-1) - same | TO-220-3 - same |
| Collector-Emitter Voltage (VCE) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current (IC) | 15 A | 20 A | 10 A | 6 A | 15 A | 15 A |
| VCE(sat) typical | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.7 V (typ) |
| Co-Packed Diode | EmCon HE (full-rated) | EmCon HE | EmCon HE | EmCon HE | EmCon HE | UF series diode |
| Technology | TRENCHSTOP + Fieldstop (IGBT3) | TRENCHSTOP + Fieldstop | TRENCHSTOP + Fieldstop | TRENCHSTOP + Fieldstop | TRENCHSTOP + Fieldstop | Fieldstop IGBT |
Bảo phân biệt quan trọng
- Integrated co-packed EmCon HE anti-parallel diode (vsIKP15N60T vs bare IGBTs (e.g., IGB15N60T))
- Higher current headroom within same TO-220 family (vsIKP20N60T vs IKP15N60T)
- Cross-brand pin-compatible alternative available (vsFGA15N60UFDTU (onsemi) vs IKP15N60T (Infineon))
Ghi chú thiết kế
Estimated: at IC=15 A and VCE(sat)=1.5 V, conduction loss is ~22.5 W at 100% duty. The TO-220 has a published RthJC of ~0.9-1.0 °C/W and RthJA of ~62 °C/W without heatsink. At full conduction loss and no heatsink, junction temperature would rise by 22.5 W × 62 °C/W = 1395 °C above ambient - clearly impossible. In practice, a clip-on heatsink with RthSA of ~5 °C/W (TO-220 clip, natural convection) is mandatory, reducing total RthJA to ~7 °C/W and junction rise to ~158 °C, still above Tj max of 175 °C. For continuous 15 A operation, use a fan-cooled or larger heatsink maintaining Tj below 150 °C.
Keep the gate-drive loop (gate-emitter) area as small as possible, ideally under 1 cm², to minimise parasitic inductance that can cause gate-oscillation and dv/dt-induced turn-on. Place the gate-driver supply decoupling capacitor (typically 100 nF ceramic) physically within 5 mm of the gate and emitter pins. The collector tab is a heatsink surface but is electrically live at collector potential; use a thermally conductive but electrically insulating pad (e.g., silicone with fiberglass) if the heatsink is grounded. A separate gate-source/emitter kelvin connection (pin 3 emitter return) improves switching performance at high di/dt.
Do not exceed VGE of ±20 V (absolute max); typical gate drive is +15 V on and -5 to -8 V off for hard-switched applications to provide noise margin against Miller-induced parasitic turn-on. Do not operate above Tj max of 175 °C; derate to 150 °C for long-term reliability per Arrhenius model. The IGBT must have a minimum gate resistance (typically 10-50 Ω) to limit di/dt and dv/dt, but too-high resistance increases switching loss - check the datasheet's recommended gate resistor range.
For through-hole TO-220 mounting, use a single M3 screw with a spring washer to maintain thermal contact pressure over thermal cycling. Apply a thin layer of thermal compound (e.g., Wakefield Type 120 or Shin-Etsu X-23) between the tab and heatsink. The TO-220 tab is rated for ~260 °C soldering for 10 seconds; use a clip-on heatsink for field-replaceable designs or solder the tab directly to a copper pour for higher thermal performance. Provide adequate creepage pads (≥6 mm clearance) on the PCB for the 600 V class.
Thông tin tuân thủ
RoHS compliant per Infineon datasheet. Not AEC-Q100 qualified - this part targets industrial/commercial applications, not automotive safety-critical. For automotive-grade equivalents, consult Infineon's automotive IGBT portfolio.
