IPD038N06N3GATMA1 - 60V 90A OptiMOS N-Channel MOSFET | Infineon
MPN: IPD038N06N3GATMA1 ✓ Hoạt độngIPD038N06N3GATMA1 Tóm tắt
An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of the P-region beneath the gate oxide, forming an N-channel that conducts current between drain and source. In the broader taxonomy, this places the IPD038N06N3GATMA1 inside: power MOSFET -> discrete MOSFET -> discrete semiconductor -> power management component. The "low-voltage, very-high-current" segment of this hierarchy is dominated by 40 V-100 V MOSFETs optimized for synchronous rectification in switched-mode power supplies (SMPS), where conduction and switching losses directly determine overall system efficiency.
Key features include 60 V VDS max, 90 A ID continuous (Tc), ±20 V VGS rating, 188 W power dissipation (Tc), and a low on-resistance of 3.8 mΩ typical at 10 V VGS. The OptiMOS 60 V generation uses a trench-cell structure with an optimized P-body profile that minimizes RDS(on) × Qg figure of merit, while the 4 V typical VGS(th) ensures robust compatibility with 5 V-12 V gate-drive signals common in digital controllers.
Internally the device uses Infineon's advanced trench MOSFET technology, which achieves a low specific on-resistance per unit silicon area. This enables the 3.8 mΩ/90 A rating in a compact TO-252 outline rather than the larger D2PAK or TO-220 packages older planar generations required. The part is rated MSL1 (moisture sensitivity level 1) and is fully RoHS-compliant and halogen-free.
Typical applications include synchronous rectification in server, desktop and tablet SMPS, DC-DC converter high-side/low-side switches, motor-control H-bridges, solar micro-inverters, and battery-protection circuits in 12 V-36 V lithium packs. The low gate charge and low output capacitance also make it well-suited for high-frequency hard-switched topologies.
When designing with this MOSFET, plan thermal management around the TO-252 footprint. With 188 W Tc-rated power dissipation the junction can run near 175 °C at full load without proper PCB copper heatsinking; an exposed thermal pad soldered to a 1-2 square-inch copper pour keeps thermal resistance (RθJA) typically below 50 °C/W.
This page synthesizes distributor pricing, drop-in alternative part numbers in the same TO-252 footprint, and practical PCB design notes that go beyond the manufacturer datasheet's typical-characteristics graphs.
Bộ thay thế dễ dàng lắp đặt cho IPD038N06N3GATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPD038N06N3GATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Package, Drain-Source Voltage (VDS), Continuous Drain Current (ID) at Tc, FET Type.
IPD50N06S409ATMA2
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD038N04N4GBTMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPB110P06LMATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD65R380E6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD038N06N3GATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel MOSFET |
| Series | OptiMOS 60V |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc | 90 A |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 4 V (typ) |
| On-Resistance (RDS(on)) at VGS=10V | 3.8 mΩ |
| Total Power Dissipation (PD) at Tc | 188 W |
| Hộp | PG-TO252-3 (DPAK) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 |
| Trạng thái RoHS | Compliant |
| Đông trùng haogen | Yes |
| Lead-Free | Yes |
| Technology | OptiMOS trench MOSFET |
| Polarity | N-Channel |
Cấu hình chân IPD038N06N3GATMA1
| Chân 1 | Gate — Gate input; drive with 10 V for lowest RDS(on) |
| Chân 2 | Drain — Drain (electrically connected to the metal tab) |
| Chân 3 | Source — Source return |
| Chân Tab | Drain (Thermal) — Metal back-tab - solder to copper pour for thermal dissipation; electrically tied to Drain (pin 2) |
Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
IPD038N06N3GATMA1 phù hợp cho 6 Áp dụngs: Synchronous Rectification in Server SMPS, Desktop & Tablet Charger Adapters, Industrial Motor Control H-Bridge, Solar Micro-Inverter High-Frequency Stage, Hard-Switched DC-DC Converter, Battery Protection & Load Switch.
Synchronous Rectification in Server SMPS
The IPD038N06N3GATMA1 is purpose-built for synchronous-rectifier (SR) stages in 12 V and 24 V server SMPS, where the 3.8 mΩ RDS(on) at 10 V VGS keeps conduction loss under 1% of throughput power. At 50 A secondary-side current, conduction loss is ~9.5 W versus 14 W for typical 5 mΩ alternatives, directly improving 80 PLUS Titanium efficiency targets. The TO-252 package supports 100-200 kHz switching common in modern LLC and phase-shift full-bridge topologies.
Được đề xuất
Desktop & Tablet Charger Adapters
In 65-100 W USB-PD laptop chargers and tablet adapters, the IPD038N06N3GATMA1 serves as the primary-side or secondary-side synchronous switch, where its 60 V VDS comfortably handles 19-20 V output rails with margin. The 3.8 mΩ RDS(on) enables >94% end-to-end adapter efficiency required for ENERGY STAR v8 compliance. OptiMOS 60V low gate charge (~50 nC typical) supports QR-mode and active-clamp flyback switching frequencies above 150 kHz, shrinking magnetic component size.
Được đề xuất
Industrial Motor Control H-Bridge
The IPD038N06N3GATMA1 fits low-voltage 12-36 V brushed and BLDC motor-drive half-bridges where 90 A peak drain current supports direct PWM switching of fractional-horsepower industrial motors. The 60 V VDS rating tolerates regenerative brake kickback transients on 24 V bus systems. Mounted in a DPAK package, it enables compact PCB layouts for servo drives, conveyor control, and small robotics where thermal performance and footprint density are critical.
Được đề xuất
Solar Micro-Inverter High-Frequency Stage
In 200-600 W residential solar micro-inverters, the IPD038N06N3GATMA1 operates in the high-frequency DC-DC stage following the PV panel, where its 60 V VDS handles 36-cell panel open-circuit voltages up to 44 V with safe derating. The low gate charge (~50 nC) and low output capacitance minimize switching loss at 100+ kHz, enabling compact toroidal magnetics. Efficiency above 96% at full load directly translates to higher kWh harvest in field installations.
Được đề xuất
Hard-Switched DC-DC Converter
The IPD038N06N3GATMA1 is well-suited as the synchronous FET in 12 V-48 V hard-switched buck and buck-boost converters, where its 3.8 mΩ RDS(on) at 10 V VGS keeps efficiency above 95% at 30-50 A loads. The 60 V VDS covers 48 V telecom bus rails with adequate margin for transients. The TO-252 package is footprint-compatible with most 60V-rated DPAK MOSFETs, allowing design reuse across product variants.
Được đề xuất
Battery Protection & Load Switch
The IPD038N06N3GATMA1 functions as a high-side or low-side load switch in 12 V-36 V lithium battery packs, where its 60 V VDS comfortably exceeds the maximum charged voltage of 4S-7S Li-ion packs. The 3.8 mΩ RDS(on) minimizes voltage drop during peak discharge, preserving usable pack capacity. Combined with a battery monitor IC, it implements <1 ms short-circuit disconnect for cell-level protection required by UL 1973.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPD038N06N3GATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPD50N06S409ATMA2 | IPD038N04N4GBTMA1 | IPB110P06LMATMA1 | IPD65R380E6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 40 V | 60 V (P-channel) | 650 V |
| On-Resistance (RDS(on)) at 10V | 3.8 mΩ | 5.0 mΩ | 3.8 mΩ | 11 mΩ | 0.38 Ω |
| Polarity | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel |
| Technology Family | OptiMOS 60V | StrongIRFET | OptiMOS 40V | OptiMOS P 60V | CoolMOS |
Bảo phân biệt quan trọng
- Lowest RDS(on) in Infineon's 60V DPAK OptiMOS family (vsIPD50N06S409ATMA2)
- Higher VDS margin for 24V battery and 48V telecom systems (vsIPD038N04N4GBTMA1)
- Higher continuous current rating than P-channel counterpart (vsIPB110P06LMATMA1)
Ghi chú thiết kế
The TO-252 (DPAK) package dissipates 188 W at 25 °C case temperature, but in real PCB designs RθJA is the limiting factor. Estimated: with 1 square inch of top-side copper pour (1 oz), RθJA is ~50 °C/W; at 50 A load (conduction loss ~9.5 W) the junction rises ~70 °C above ambient - acceptable for a 25 °C ambient industrial environment. For higher currents, expand the copper pour to 2-3 square inches or add a topside heatsink. Always derate to a maximum junction temperature of 125 °C for reliability.
Layout is critical for high-current MOSFET performance. Place the gate drive loop (gate resistor → gate → source return) within 5 mm of the package to minimize parasitic inductance. Use a 4-layer PCB with a dedicated ground plane immediately below the TO-252 footprint; this reduces source-inductance-induced gate ringing that can exceed ±20 V VGS and damage the gate oxide. Keep the power loop (input cap → high-side FET → low-side FET → GND) compact - every 10 nH adds ~40 V of switching transient at 4 A/ns.
Common pitfalls include: (1) exceeding ±20 V VGS - never drive the gate above 20 V or below -20 V, even transiently; (2) ignoring body-diode reverse recovery - this MOSFET's body diode is optimized for low Qrr, but in half-bridge topologies add sufficient dead-time (>50 ns) to prevent shoot-through; (3) operating above maximum junction temperature (175 °C) drastically reduces lifetime - the Arrhenius model halves lifetime for every 10 °C increase; (4) omitting the gate-source pull-down resistor (10 kΩ) leaves the part vulnerable to unintended turn-on during hot-plug or ESD events.
Thông tin tuân thủ
RoHS compliant and halogen-free per manufacturer datasheet. MSL1 rated per JEDEC J-STD-020. Not AEC-Q100 qualified - for automotive applications, choose AEC-Q100 graded variants.
